公开(公告)号：US20150083995A1

公开(公告)日：2015-03-26

申请号：US14496599

申请日：2014-09-25

Applicant: LG INNOTEK CO., LTD.

Inventor： Jae Hoon CHOI ,  Young Jae CHOI ,  Ho Jun LEE

IPC: H01L33/12 ,  H01L33/28 ,  H01L33/32 ,  H01L33/06

CPC classification number: H01L33/12 ,  H01L33/007 ,  H01L33/32 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/00012

Abstract: Disclosed is a light emitting device package capable of improving luminous efficiency. The light emitting device includes a substrate; a first buffer layer on the substrate; a first insulating layer on the first buffer layer; a second buffer layer on the first insulating layer; a second insulating layer on the second buffer layer; a third buffer layer around the second buffer layer and the insulating layer; and a light emitting structure on the third buffer layer.

Abstract translation: 公开了能够提高发光效率的发光器件封装。 发光装置包括：基板; 衬底上的第一缓冲层; 在第一缓冲层上的第一绝缘层; 在所述第一绝缘层上的第二缓冲层; 在第二缓冲层上的第二绝缘层; 围绕第二缓冲层和绝缘层的第三缓冲层; 以及在第三缓冲层上的发光结构。

公开(公告)号：US20150014724A1

公开(公告)日：2015-01-15

申请号：US14330465

申请日：2014-07-14

Applicant: LG Innotek Co., Ltd.

Inventor： Young Jae CHOI ,  Jae Hoon CHOI

IPC: H01L33/50 ,  H01L33/14

CPC classification number: H01L33/40 ,  H01L33/501 ,  H01L33/504 ,  H01L33/641 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2924/00014

Abstract: A light emitting device includes a light emitting structure including a plurality of compound semiconductor layers. A current spreading layer is provided under the light emitting structure, and a plurality of wavelength conversion structures is provided in the current spreading layer. An electrode layer is provided under the current spreading layer, and an electrode is provided on the light emitting structure.

Abstract translation: 发光器件包括包括多个化合物半导体层的发光结构。 电流扩散层设置在发光结构的下方，并且在电流扩展层中设置多个波长转换结构。 在电流扩散层下方设置电极层，在发光结构上设置电极。

公开(公告)号：US20180315887A1

公开(公告)日：2018-11-01

申请号：US15768282

申请日：2016-10-14

Applicant: LG INNOTEK CO., LTD.

Inventor： Jae Hoon CHOI ,  Hae Jin PARK ,  Rak Jun CHOI ,  Byeoung Jo KIM

IPC: H01L33/12 ,  H01L33/20 ,  H01L33/46 ,  H01L33/60 ,  H01L33/62

CPC classification number: H01L33/12 ,  F21K9/232 ,  F21Y2115/10 ,  H01L33/06 ,  H01L33/20 ,  H01L33/22 ,  H01L33/32 ,  H01L33/40 ,  H01L33/46 ,  H01L33/60 ,  H01L33/62 ,  H01L2933/0091

Abstract: A semiconductor device according to an embodiment comprises: a substrate; a buffer layer provided on the substrate; a first conductivity type semiconductor layer provided on the buffer layer; a second conductivity type semiconductor layer; a light emitting structure, provided between the first conductivity type semiconductor layer and the second conductivity type semiconductor layer, comprising an active layer which emits ultraviolet light; and a plurality of air voids provided within the buffer layer, wherein the air voids can be formed to have two or more inclined surfaces.

公开(公告)号：US20160049545A1

公开(公告)日：2016-02-18

申请号：US14925098

申请日：2015-10-28

Applicant: LG INNOTEK CO., LTD.

Inventor： Jae Hoon CHOI ,  Buem Yeon LEE ,  Ki Young SONG ,  Rak Jun CHOI CHOI

IPC: H01L33/06

CPC classification number: H01L33/06 ,  B82Y20/00 ,  H01L21/0237 ,  H01L21/02444 ,  H01L21/02472 ,  H01L21/02502 ,  H01L21/02513 ,  H01L21/0254 ,  H01L33/007 ,  H01L33/12 ,  H01L33/22 ,  H01L33/387 ,  H01L33/42 ,  Y10S977/734 ,  Y10S977/95

Abstract: Disclosed is a light emitting device. The light emitting device includes a nano-structure, a first semiconductor layer on the nano-structure, an active layer on the first semiconductor layer, and a second conductive semiconductor layer on the active layer. The nano-structure includes a graphene layer disposed under the first semiconductor layer to make contact with the first semiconductor layer; and a plurality of nano-textures extending from a top surface of the graphene layer to the first semiconductor layer and contacted with the first semiconductor layer.

Abstract translation: 公开了一种发光器件。 发光器件包括纳米结构，纳米结构上的第一半导体层，第一半导体层上的有源层和有源层上的第二导电半导体层。 纳米结构包括设置在第一半导体层下方以与第一半导体层接触的石墨烯层; 以及从所述石墨烯层的顶表面延伸到所述第一半导体层并与所述第一半导体层接触的多个纳米纹理。