公开(公告)号：US20070003698A1

公开(公告)日：2007-01-04

申请号：US11470915

申请日：2006-09-07

申请人： LING CHEN ,  Hua Chung ,  Barry Chin ,  Hong Zhang

发明人： LING CHEN ,  Hua Chung ,  Barry Chin ,  Hong Zhang

IPC分类号： C23C16/00

CPC分类号： H01L21/28562 ,  C23C16/34 ,  C23C16/4411 ,  C23C16/4412 ,  C23C16/45504 ,  C23C16/45508 ,  C23C16/45512 ,  C23C16/45525 ,  C23C16/45544 ,  C23C16/45563 ,  C23C16/45582 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76871

摘要： A method for depositing a refractory metal nitride barrier layer having a thickness of about 20 angstroms or less is provided. In one aspect, the refractory metal nitride layer is formed by introducing a pulse of a metal-containing compound followed by a pulse of a nitrogen-containing compound. The refractory metal nitride barrier layer provides adequate barrier properties and allows the grain growth of the first metal layer to continue across the barrier layer into the second metal layer thereby enhancing the electrical performance of the interconnect.

公开(公告)号：US20070026147A1

公开(公告)日：2007-02-01

申请号：US11470922

申请日：2006-09-07

申请人： LING CHEN ,  Hua Chung ,  Barry Chin ,  Hong Zhang

发明人： LING CHEN ,  Hua Chung ,  Barry Chin ,  Hong Zhang

IPC分类号： C23C16/00

CPC分类号： H01L21/28562 ,  C23C16/34 ,  C23C16/4411 ,  C23C16/4412 ,  C23C16/45504 ,  C23C16/45508 ,  C23C16/45512 ,  C23C16/45525 ,  C23C16/45544 ,  C23C16/45563 ,  C23C16/45582 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76871

摘要： A method for depositing a refractory metal nitride barrier layer having a thickness of about 20 angstroms or less is provided. In one aspect, the refractory metal nitride layer is formed by introducing a pulse of a metal-containing compound followed by a pulse of a nitrogen-containing compound. The refractory metal nitride barrier layer provides adequate barrier properties and allows the grain growth of the first metal layer to continue across the barrier layer into the second metal layer thereby enhancing the electrical performance of the interconnect.

摘要翻译： 提供了一种沉积具有约20埃或更小厚度的难熔金属氮化物阻挡层的方法。 一方面，难熔金属氮化物层是通过引入含金属化合物的脉冲，随后是含氮化合物的脉冲而形成的。 难熔金属氮化物阻挡层提供了足够的阻挡性能，并且允许第一金属层的晶粒生长继续穿过阻挡层进入第二金属层，从而增强了互连的电性能。

公开(公告)号：US20070099415A1

公开(公告)日：2007-05-03

申请号：US11549941

申请日：2006-10-16

申请人： Ling Chen ,  Hua Chung ,  Sean Seutter ,  Michael Yang ,  Ming Xi ,  Vincent Ku ,  Dien-Yeh Wu ,  Alan Ouye ,  Norman Nakashima ,  Barry Chin ,  Hong Zhang

发明人： Ling Chen ,  Hua Chung ,  Sean Seutter ,  Michael Yang ,  Ming Xi ,  Vincent Ku ,  Dien-Yeh Wu ,  Alan Ouye ,  Norman Nakashima ,  Barry Chin ,  Hong Zhang

IPC分类号： H01L21/4763 ,  H01L21/44

CPC分类号： H01L21/28562 ,  C23C16/34 ,  C23C16/4411 ,  C23C16/4412 ,  C23C16/45504 ,  C23C16/45508 ,  C23C16/45512 ,  C23C16/45525 ,  C23C16/45544 ,  C23C16/45563 ,  C23C16/45582 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76871

摘要： In one embodiment, a method for forming a tungsten-containing material on a substrate is provided which includes positioning a substrate having an underlying tungsten layer within a process chamber and depositing a tungsten-containing barrier layer on the underlying tungsten layer during a cyclical layer deposition process. The tungsten-containing barrier layer contains a refractory metal nitride material. The method further provides depositing a seed layer on the tungsten-containing barrier layer during a vapor deposition process and depositing a bulk tungsten layer on the seed layer during a chemical vapor deposition process.

摘要翻译： 在一个实施例中，提供了一种在衬底上形成含钨材料的方法，其包括将具有下层钨层的衬底定位在处理室内，并且在循环层沉积期间将下述钨层上沉积含钨阻挡层 处理。 含钨阻挡层含有难熔金属氮化物材料。 该方法进一步提供在气相沉积工艺期间在含钨阻挡层上沉积种子层，并且在化学气相沉积工艺期间在种子层上沉积体钨层。

公开(公告)号：US08318266B2

公开(公告)日：2012-11-27

申请号：US11470922

申请日：2006-09-07

申请人： Ling Chen ,  Hua Chung ,  Barry L. Chin ,  Hong Zhang

发明人： Ling Chen ,  Hua Chung ,  Barry L. Chin ,  Hong Zhang

IPC分类号： C23C16/00 ,  C23C14/02 ,  H05H1/00

CPC分类号： H01L21/28562 ,  C23C16/34 ,  C23C16/4411 ,  C23C16/4412 ,  C23C16/45504 ,  C23C16/45508 ,  C23C16/45512 ,  C23C16/45525 ,  C23C16/45544 ,  C23C16/45563 ,  C23C16/45582 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76871

摘要： A method for depositing a refractory metal nitride barrier layer having a thickness of about 20 angstroms or less is provided. In one aspect, the refractory metal nitride layer is formed by introducing a pulse of a metal-containing compound followed by a pulse of a nitrogen-containing compound. The refractory metal nitride barrier layer provides adequate barrier properties and allows the grain growth of the first metal layer to continue across the barrier layer into the second metal layer thereby enhancing the electrical performance of the interconnect.

公开(公告)号：US08293328B2

公开(公告)日：2012-10-23

申请号：US11470915

申请日：2006-09-07

申请人： Ling Chen ,  Hua Chung ,  Barry L. Chin ,  Hong Zhang

发明人： Ling Chen ,  Hua Chung ,  Barry L. Chin ,  Hong Zhang

IPC分类号： C23C16/00

CPC分类号： H01L21/28562 ,  C23C16/34 ,  C23C16/4411 ,  C23C16/4412 ,  C23C16/45504 ,  C23C16/45508 ,  C23C16/45512 ,  C23C16/45525 ,  C23C16/45544 ,  C23C16/45563 ,  C23C16/45582 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76871

摘要： A method for depositing a refractory metal nitride barrier layer having a thickness of about 20 angstroms or less is provided. In one aspect, the refractory metal nitride layer is formed by introducing a pulse of a metal-containing compound followed by a pulse of a nitrogen-containing compound. The refractory metal nitride barrier layer provides adequate barrier properties and allows the grain growth of the first metal layer to continue across the barrier layer into the second metal layer thereby enhancing the electrical performance of the interconnect.

摘要翻译： 提供了一种沉积具有约20埃或更小厚度的难熔金属氮化物阻挡层的方法。 一方面，难熔金属氮化物层是通过引入含金属化合物的脉冲，随后是含氮化合物的脉冲而形成的。 难熔金属氮化物阻挡层提供了足够的阻挡性能，并且允许第一金属层的晶粒生长继续穿过阻挡层进入第二金属层，从而增强了互连的电性能。

公开(公告)号：US20060223286A1

公开(公告)日：2006-10-05

申请号：US11423535

申请日：2006-06-12

申请人： Barry Chin ,  Alfred Mak ,  Lawrence Lei ,  Ming Xi ,  Hua Chung ,  Ken Lai ,  Jeong Byun

发明人： Barry Chin ,  Alfred Mak ,  Lawrence Lei ,  Ming Xi ,  Hua Chung ,  Ken Lai ,  Jeong Byun

IPC分类号： C23C16/00 ,  H01L21/20

CPC分类号： C23C16/45544 ,  C23C16/45525 ,  C23C16/45548 ,  C23C16/45551 ,  C23C16/4583

摘要： A method and apparatus for atomic layer deposition (ALD) is described. The apparatus comprises a deposition chamber and a wafer support. The deposition chamber is divided into two or more deposition regions that are integrally connected one to another. The wafer support is movable between the two or more interconnected deposition regions within the deposition chamber.

摘要翻译： 描述了用于原子层沉积（ALD）的方法和装置。 该装置包括沉积室和晶片支架。 沉积室被分成两个或更多个彼此一体地连接的沉积区域。 晶片支撑件可在沉积室内的两个或更多互连的沉积区域之间移动。

公开(公告)号：US08668776B2

公开(公告)日：2014-03-11

申请号：US12797999

申请日：2010-06-10

申请人： Ling Chen ,  Vincent Ku ,  Dien-Yeh Wu ,  Hua Chung ,  Alan Ouye ,  Norman Nakashima

发明人： Ling Chen ,  Vincent Ku ,  Dien-Yeh Wu ,  Hua Chung ,  Alan Ouye ,  Norman Nakashima

IPC分类号： C23C16/00 ,  H01L21/306

CPC分类号： H01L21/28562 ,  C23C16/34 ,  C23C16/4411 ,  C23C16/4412 ,  C23C16/45504 ,  C23C16/45508 ,  C23C16/45512 ,  C23C16/45525 ,  C23C16/45544 ,  C23C16/45563 ,  C23C16/45582 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76871

摘要： Apparatus and method for forming thin layers on a substrate are provided. A processing chamber has a gas delivery assembly that comprises a lid with a cap portion and a covering member that together define an expanding channel at a central portion of the lid, the covering member having a tapered bottom surface extending from the expanding channel to a peripheral portion of the covering member. Gas conduits are coupled to the expanding channel and positioned at an angle from a center of the expanding channel to form a circular gas flow through the expanding channel. The bottom surface of the chamber lid is shaped and sized to substantially cover the substrate receiving surface. One or more valves are coupled to the passageway, and one or more gas sources are coupled to each valve. A choke is disposed on the chamber lid adjacent a perimeter of the tapered bottom surface.

摘要翻译： 提供了在基板上形成薄层的装置和方法。 处理室具有气体输送组件，该气体输送组件包括具有盖部分的盖和覆盖部件，该盖部分在盖的中心部分处共同限定出扩张通道，该覆盖部件具有从扩张通道延伸到外围的锥形底面 覆盖部件的一部分。 气体管道连接到膨胀通道并且与膨胀通道的中心成一定角度定位，以形成通过膨胀通道的圆形气流。 室盖的底表面的形状和尺寸基本上覆盖基板接收表面。 一个或多个阀联接到通道，并且一个或多个气体源联接到每个阀。 扼流圈设置在邻近锥形底面的周边的腔室盖上。

公开(公告)号：US07780788B2

公开(公告)日：2010-08-24

申请号：US11077753

申请日：2005-03-11

申请人： Ling Chen ,  Vincent Ku ,  Dien-Yeh Wu ,  Hua Chung ,  Alan Ouye ,  Norman Nakashima

发明人： Ling Chen ,  Vincent Ku ,  Dien-Yeh Wu ,  Hua Chung ,  Alan Ouye ,  Norman Nakashima

IPC分类号： C23C16/00 ,  H01L21/306

CPC分类号： H01L21/28562 ,  C23C16/34 ,  C23C16/4411 ,  C23C16/4412 ,  C23C16/45504 ,  C23C16/45508 ,  C23C16/45512 ,  C23C16/45525 ,  C23C16/45544 ,  C23C16/45563 ,  C23C16/45582 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76871

摘要： Apparatus and method for forming thin layers on a substrate are provided. A processing chamber has a gas delivery assembly that comprises a lid with a cap portion and a covering member that together define an expanding channel at a central portion of the lid, the covering member having a tapered bottom surface extending from the expanding channel to a peripheral portion of the covering member. Gas conduits are coupled to the expanding channel and positioned at an angle from a center of the expanding channel to form a circular gas flow through the expanding channel, The bottom surface of the chamber lid is shaped and sized to substantially cover the substrate receiving surface. One or more valves are coupled to the passageway, and one or more gas sources are coupled to each valve. A choke is disposed on the chamber lid adjacent a perimeter of the tapered bottom surface.

摘要翻译： 提供了在基板上形成薄层的装置和方法。 处理室具有气体输送组件，其包括具有盖部分的盖和覆盖部件，所述盖部在盖的中心部分处共同限定出扩张通道，所述覆盖部件具有从扩张通道延伸到外围的锥形底面 覆盖部件的一部分。 气体管道连接到膨胀通道并且与膨胀通道的中心成角度地定位，以形成通过膨胀通道的圆形气体流动。腔室盖的底表面的形状和尺寸基本上覆盖基底接收表面。 一个或多个阀联接到通道，并且一个或多个气体源联接到每个阀。 扼流圈设置在邻近锥形底面的周边的腔室盖上。

公开(公告)号：US20090151633A1

公开(公告)日：2009-06-18

申请号：US12371138

申请日：2009-02-13

申请人： Ling Chen ,  Vincent W. Ku ,  Hua Chung ,  Christophe Marcadal ,  Seshadri Ganguli ,  Jenny Lin ,  Dien-Yeh Wu ,  Alan Ouye ,  Mei Chang

发明人： Ling Chen ,  Vincent W. Ku ,  Hua Chung ,  Christophe Marcadal ,  Seshadri Ganguli ,  Jenny Lin ,  Dien-Yeh Wu ,  Alan Ouye ,  Mei Chang

IPC分类号： C23C16/54

CPC分类号： C23C16/45544 ,  C23C16/18 ,  C23C16/34 ,  C23C16/4402 ,  C23C16/4481 ,  C23C16/4482 ,  C23C16/4487 ,  Y10T117/10 ,  Y10T117/1004 ,  Y10T117/1008

摘要： Embodiments described herein are directed to an apparatus for generating a precursor for a semiconductor processing system. In one embodiment, an apparatus for generating a precursor gas during a vapor deposition process is described. The apparatus includes a canister containing an interior volume between a lid and a bottom, a gaseous inlet and a gaseous outlet disposed on the lid, a plurality of silos coupled to the bottom and extending from a lower region to an upper region of the interior volume, and a tantalum precursor having a chlorine concentration of about 5 ppm or less contained within the lower region of the canister.

摘要翻译： 本文描述的实施例涉及用于产生半导体处理系统的前体的装置。 在一个实施例中，描述了在气相沉积工艺期间产生前体气体的装置。 该装置包括容纳盖和底部之间的内部容积的容器，设置在盖上的气体入口和气体出口，与底部相连并从内部容积的下部区域延伸到上部区域的多个筒仓 ，以及包含在罐的下部区域内的氯浓度为约5ppm以下的钽前体。

公开(公告)号：US07494908B2

公开(公告)日：2009-02-24

申请号：US11749064

申请日：2007-05-15

申请人： Hua Chung ,  Ling Chen ,  Jick Yu ,  Mei Chang

发明人： Hua Chung ,  Ling Chen ,  Jick Yu ,  Mei Chang

IPC分类号： H01L21/3205

CPC分类号： H01L23/53238 ,  C23C14/046 ,  C23C14/165 ,  C23C14/3414 ,  C23C16/045 ,  C23C16/34 ,  C23C16/45525 ,  H01L21/2855 ,  H01L21/28562 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76862 ,  H01L21/76864 ,  H01L21/76871 ,  H01L2221/1089 ,  H01L2924/0002 ,  Y10S438/903 ,  H01L2924/00

摘要： A system for processing a substrate is provided which includes at least one atomic layer deposition (ALD) chamber for depositing a barrier layer containing tantalum and at least one physical vapor deposition (PVD) metal seed chamber for depositing a metal seed layer on the barrier layer. The at least one ALD chamber may be in fluid communication with a first precursor source providing a tantalum-containing compound and a second precursor source. In one example, the tantalum-containing compound is an organometallic tantalum precursor, such as PDMAT. In another example, the second precursor source contains a nitrogen precursor, such as ammonia. The PDMAT may have a chlorine concentration of about 100 ppm or less, preferably, about 30 ppm or less, and more preferably, about 5 ppm or less. In some examples, the PVD metal seed chamber is used to deposit a copper-containing metal seed layer.

摘要翻译： 提供了一种用于处理衬底的系统，其包括用于沉积包含钽的阻挡层的至少一个原子层沉积（ALD）室和用于在阻挡层上沉积金属籽晶层的至少一个物理气相沉积（PVD）金属种子室 。 所述至少一个ALD室可以与提供含钽化合物和第二前体源的第一前体源流体连通。 在一个实例中，含钽化合物是有机金属钽前体，例如PDMAT。 在另一个实例中，第二前体源含有氮前体，例如氨。 PDMAT的氯浓度可以为约100ppm以下，优选为约30ppm以下，更优选为约5ppm以下。 在一些实例中，PVD金属种子室用于沉积含铜金属种子层。