公开(公告)号：US09548233B2

公开(公告)日：2017-01-17

申请号：US15052767

申请日：2016-02-24

Applicant: LuxVue Technology Corporation

Inventor： Dariusz Golda ,  Andreas Bibl

IPC: H01L21/683 ,  H01L21/768 ,  H01L23/48 ,  H05K1/02 ,  H05K1/03 ,  H05K1/09 ,  H05K1/11

CPC classification number: H01L21/6833 ,  H01L21/6835 ,  H01L21/76898 ,  H01L23/481 ,  H01L2221/68368 ,  H01L2924/00 ,  H01L2924/0002 ,  H05K1/0284 ,  H05K1/03 ,  H05K1/09 ,  H05K1/115 ,  H05K2201/09036

Abstract: A micro device transfer head array and method of forming a micro device transfer array from an SOI substrate are described. In an embodiment, the micro device transfer head array includes a base substrate and a patterned silicon layer over the base substrate. The patterned silicon layer may include a silicon interconnect and an array of silicon electrodes electrically connected with the silicon interconnect. Each silicon electrode includes a mesa structure protruding above the silicon interconnect. A dielectric layer covers a top surface of each mesa structure.

Abstract translation: 描述了从SOI衬底形成微器件传输阵列的微器件转移头阵列和方法。 在一个实施例中，微器件传送头阵列包括基底衬底和基底衬底上的图案化硅层。 图案化硅层可以包括硅互连和与硅互连电连接的硅电极阵列。 每个硅电极包括突出在硅互连上方的台面结构。 介电层覆盖每个台面结构的顶面。

公开(公告)号：US09484237B2

公开(公告)日：2016-11-01

申请号：US14814307

申请日：2015-07-30

Applicant: LuxVue Technology Corporation

Inventor： Andreas Bibl ,  Dariusz Golda

IPC: H01L21/683 ,  H01L23/00 ,  H01L21/768 ,  B81C99/00

CPC classification number: H01L21/6833 ,  B81C99/002 ,  H01L21/6835 ,  H01L21/76802 ,  H01L21/76877 ,  H01L21/76898 ,  H01L24/75 ,  H01L2221/68322 ,  H01L2221/68354 ,  H01L2221/68363 ,  H01L2221/68368 ,  H01L2221/68381 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/1461 ,  H01L2924/00

Abstract: Micro pick up arrays for transferring micro devices from a carrier substrate are disclosed. In an embodiment, a micro pick up array includes a compliant contact for delivering an operating voltage from a voltage source to an array of electrostatic transfer heads. In an embodiment, the compliant contact is moveable relative to a base substrate of the micro pick up array.

Abstract translation: 公开了用于从载体衬底传送微器件的微拾取阵列。 在一个实施例中，微拾取阵列包括用于将工作电压从电压源传送到静电转印头阵列的柔性接触件。 在一个实施例中，柔性接触件可相对于微拾取阵列的基底基板移动。

公开(公告)号：US20160094160A1

公开(公告)日：2016-03-31

申请号：US14502994

申请日：2014-09-30

Applicant: LuxVue Technology Corporation

Inventor： Dariusz Golda ,  Stephen P. Bathurst ,  John A. Higginson ,  Andreas Bibl ,  Jeffrey Birkmeyer

IPC: H02N13/00

CPC classification number: B81C99/002 ,  H01H59/0009 ,  H01L41/113

Abstract: A compliant electrostatic transfer head and method of forming a compliant electrostatic transfer head are described. In an embodiment, a compliant electrostatic transfer head includes a base substrate, a cavity template layer on the base substrate, a first confinement layer between the base substrate and the cavity template layer, and a patterned device layer on the cavity template layer. The patterned device layer includes an electrode that is deflectable toward a cavity in the cavity template layer. In an embodiment, a second confinement layer is between the cavity template layer and the patterned device layer.

Abstract translation: 描述了柔性静电转印头和形成顺应性静电转印头的方法。 在一个实施例中，顺应性静电转印头包括基底衬底，在基底衬底上的空腔模板层，在基底衬底和腔模板层之间的第一限制层，以及腔模板层上的图案化器件层。 图案化器件层包括能够朝向空腔模板层中的空腔偏转的电极。 在一个实施例中，第二限制层位于空腔模板层和图案化器件层之间。

公开(公告)号：US09288899B2

公开(公告)日：2016-03-15

申请号：US14681707

申请日：2015-04-08

Applicant: LuxVue Technology Corporation

Inventor： Dariusz Golda ,  Andreas Bibl

IPC: H01L21/266 ,  H05K1/02 ,  H01L21/768 ,  H01L23/48 ,  H01L21/683 ,  H05K1/03 ,  H05K1/09 ,  H05K1/11

CPC classification number: H01L21/6833 ,  H01L21/6835 ,  H01L21/76898 ,  H01L23/481 ,  H01L2221/68368 ,  H01L2924/00 ,  H01L2924/0002 ,  H05K1/0284 ,  H05K1/03 ,  H05K1/09 ,  H05K1/115 ,  H05K2201/09036

Abstract: A micro device transfer head array and method of forming a micro device transfer array from an SOI substrate are described. In an embodiment, the micro device transfer head array includes a base substrate and a patterned silicon layer over the base substrate. The patterned silicon layer may include a silicon interconnect and an array of silicon electrodes electrically connected with the silicon interconnect. Each silicon electrode includes a mesa structure protruding above the silicon interconnect. A dielectric layer covers a top surface of each mesa structure.

Abstract translation: 描述了从SOI衬底形成微器件传输阵列的微器件转移头阵列和方法。 在一个实施例中，微器件传送头阵列包括基底衬底和基底衬底上的图案化硅层。 图案化硅层可以包括硅互连和与硅互连电连接的硅电极阵列。 每个硅电极包括突出在硅互连上方的台面结构。 介电层覆盖每个台面结构的顶面。

公开(公告)号：US20150228525A1

公开(公告)日：2015-08-13

申请号：US14694808

申请日：2015-04-23

Applicant: LuxVue Technology Corporation

Inventor： Dariusz Golda ,  Andreas Bibl

IPC: H01L21/683

CPC classification number: H01L21/6833 ,  B32B38/18 ,  B81C99/002 ,  H01L21/266 ,  H01L21/3083 ,  H01L21/76264 ,  H01L24/75 ,  H01L29/06 ,  H01L29/0619 ,  H01L29/0692 ,  H01L29/0696 ,  H01L29/407 ,  H01L29/66143 ,  H01L29/66348 ,  H01L29/7806 ,  H01L29/7813 ,  H01L29/872 ,  H01L29/8725 ,  H01L2224/7598 ,  H01L2924/1461 ,  H02N13/00 ,  Y10T156/17

Abstract: A compliant bipolar micro device transfer head array and method of forming a compliant bipolar micro device transfer array from an SOI substrate are described. In an embodiment, a compliant bipolar micro device transfer head array includes a base substrate and a patterned silicon layer over the base substrate. The patterned silicon layer may include first and second silicon interconnects, and first and second arrays of silicon electrodes electrically connected with the first and second silicon interconnects and deflectable into one or more cavities between the base substrate and the silicon electrodes.

Abstract translation: 描述了一种兼容的双极微器件传输头阵列和从SOI衬底形成兼容的双极微器件传输阵列的方法。 在一个实施例中，柔性双极微器件转移头阵列包括基底衬底和在基底衬底上的图案化硅层。 图案化硅层可以包括第一和第二硅互连以及与第一和第二硅互连电连接并可偏转到基底基板和硅电极之间的一个或多个空腔中的第一和第二硅电极阵列。

公开(公告)号：US08945968B2

公开(公告)日：2015-02-03

申请号：US14312551

申请日：2014-06-23

Applicant: LuxVue Technology Corporation

Inventor： Andreas Bibl ,  Dariusz Golda

IPC: H01L21/00 ,  B81C1/00

CPC classification number: B81C1/0015 ,  B81B2203/0118 ,  B81C99/002 ,  H01L33/0095

Abstract: A compliant micro device transfer head and head array are disclosed. In an embodiment a micro device transfer head includes a spring arm having integrated electrode leads that is deflectable into a space between a base substrate and the spring arm.

Abstract translation: 公开了一种兼容的微器件传送头和头阵列。 在一个实施例中，微器件转移头包括具有可偏转到基底基板和弹簧臂之间的空间的集成电极引线的弹簧臂。

公开(公告)号：US20140048909A1

公开(公告)日：2014-02-20

申请号：US14063963

申请日：2013-10-25

Applicant: LuxVue Technology Corporation

Inventor： Dariusz Golda ,  Andreas Bibl

IPC: H01L29/06

CPC classification number: H01L21/6833 ,  B32B38/18 ,  B81C99/002 ,  H01L21/266 ,  H01L21/3083 ,  H01L21/76264 ,  H01L24/75 ,  H01L29/06 ,  H01L29/0619 ,  H01L29/0692 ,  H01L29/0696 ,  H01L29/407 ,  H01L29/66143 ,  H01L29/66348 ,  H01L29/7806 ,  H01L29/7813 ,  H01L29/872 ,  H01L29/8725 ,  H01L2224/7598 ,  H01L2924/1461 ,  H02N13/00 ,  Y10T156/17

Abstract: A compliant bipolar micro device transfer head array and method of forming a compliant bipolar micro device transfer array from an SOI substrate are described. In an embodiment, a compliant bipolar micro device transfer head array includes a base substrate and a patterned silicon layer over the base substrate. The patterned silicon layer may include first and second silicon interconnects, and first and second arrays of silicon electrodes electrically connected with the first and second silicon interconnects and deflectable into one or more cavities between the base substrate and the silicon electrodes.

Abstract translation: 描述了一种兼容的双极微器件传输头阵列和从SOI衬底形成兼容的双极微器件传输阵列的方法。 在一个实施例中，柔性双极微器件转移头阵列包括基底衬底和在基底衬底上的图案化硅层。 图案化硅层可以包括第一和第二硅互连以及与第一和第二硅互连电连接并可偏转到基底基板和硅电极之间的一个或多个空腔中的第一和第二硅电极阵列。

公开(公告)号：US09095980B2

公开(公告)日：2015-08-04

申请号：US13776188

申请日：2013-02-25

Applicant: LuxVue Technology Corporation

Inventor： Dariusz Golda ,  John A. Higginson ,  Andreas Bibl ,  Paul Argus Parks ,  Stephen Paul Bathurst

IPC: B25J11/00 ,  H01L21/00 ,  B25J15/00

CPC classification number: B25J11/00 ,  B25J7/00 ,  B25J9/0015 ,  B25J15/0052 ,  B25J15/0085 ,  H01L24/75 ,  H01L2224/7598

Abstract: Systems and methods for transferring a micro device from a carrier substrate are disclosed. In an embodiment, a mass transfer tool manipulator assembly allows active alignment between an array of electrostatic transfer heads on a micro pick up array and an array of micro devices on a carrier substrate. Displacement of a compliant element of the mass transfer tool manipulator assembly may be sensed to control alignment between the array of electrostatic transfer heads and the array of micro devices.

Abstract translation: 公开了用于从载体衬底传送微器件的系统和方法。 在一个实施例中，质量传递工具操纵器组件允许在微拾取阵列上的静电转印头阵列和载体衬底上的微器件阵列之间的主动对准。 可以检测质量传递工具操纵器组件的柔性元件的位移，以控制静电转印头阵列与微器件阵列之间的对准。

公开(公告)号：US09000566B2

公开(公告)日：2015-04-07

申请号：US14173693

申请日：2014-02-05

Applicant: LuxVue Technology Corporation

Inventor： Dariusz Golda ,  Andreas Bibl

IPC: H01L21/00 ,  B32B38/18 ,  H01L21/683 ,  H01L23/538 ,  B81C99/00

CPC classification number: B32B38/18 ,  B81C99/002 ,  H01L21/6835 ,  H01L23/5384 ,  H01L2221/68368 ,  H01L2221/68381 ,  H01L2924/0002 ,  Y10T156/17 ,  H01L2924/00

Abstract: A compliant monopolar micro device transfer head array and method of forming a compliant monopolar micro device transfer array from an SOI substrate are described. In an embodiment, the micro device transfer head array including a base substrate and a patterned silicon layer over the base substrate. The patterned silicon layer may include a silicon interconnect and an array of silicon electrodes electrically connected with the silicon interconnect. Each silicon electrode includes a mesa structure protruding above the silicon interconnect, and each silicon electrode is deflectable into a cavity between the base substrate and the silicon electrode. A dielectric layer covers a top surface of each mesa structure.

Abstract translation: 描述了一种兼容的单极微器件传输头阵列和从SOI衬底形成兼容单极微器件传输阵列的方法。 在一个实施例中，微器件转移头阵列包括基底衬底和在基底衬底上的图案化硅层。 图案化硅层可以包括硅互连和与硅互连电连接的硅电极阵列。 每个硅电极包括在硅互连上方突出的台面结构，并且每个硅电极可偏转到基底基板和硅电极之间的空腔中。 介电层覆盖每个台面结构的顶面。

公开(公告)号：US20140169927A1

公开(公告)日：2014-06-19

申请号：US13715591

申请日：2012-12-14

Applicant: LUXVUE TECHNOLOGY CORPORATION

Inventor： Dariusz Golda ,  John A. Higginson ,  Andreas Bibl

IPC: B25J15/00 ,  H02N13/00

CPC classification number: B25J15/0085 ,  B25J7/00 ,  B81C99/002 ,  H01L24/75 ,  H01L2224/7598 ,  Y10T29/53174

Abstract: Systems and methods for transferring a micro device from a carrier substrate are disclosed. In an embodiment, a micro pick up array structure allows the micro pick up array to automatically align with the carrier substrate. Deflection of the micro pick up array may be detected to control further movement of the micro pick up array.

Abstract translation: 公开了用于从载体衬底传送微器件的系统和方法。 在一个实施例中，微拾取阵列结构允许微拾取阵列自动地与载体衬底对准。 可以检测微拾取阵列的偏转以控制微拾取阵列的进一步移动。