摘要:
Passive prosthetic devices for focally cooling a brain and methods for inhibiting seizures are disclosed. The prosthetic devices replace a thermally insulating bone flap with a thermally conductive insert having an inner surface that contacts the relatively warm meninges or brain and an outer surface that contacts the relatively cool scalp. In an embodiment, the prosthesis is unitary; in another, a biocompatible casing is filled with a highly conductive core; in another, a filled polymer block is attached to a plate; and in another, the bone flap is filled with a conductive polymer. In one embodiment, a filled polymer containing elements that exhibit the magnetocaloric effect provide heat transfer that can be enhanced by application of a suitable magnetic field. Focal cooling as low as 1.2° C. has been found effective at inhibiting seizures.
摘要:
Passive prosthetic devices for focally cooling a brain and methods for inhibiting seizures are disclosed. The prosthetic devices replace a thermally insulating bone flap with a thermally conductive insert having an inner surface that contacts the relatively warm meninges or brain and an outer surface that contacts the relatively cool scalp. In an embodiment, the prosthesis is unitary; in another, a biocompatible casing is filled with a highly conductive core; in another, a filled polymer block is attached to a plate; and in another, the bone flap is filled with a conductive polymer. In one embodiment, a filled polymer containing elements that exhibit the magnetocaloric effect provide heat transfer that can be enhanced by application of a suitable magnetic field. Focal cooling as low as 1.2° C. has been found effective at inhibiting seizures.
摘要:
A device for cooling the central nervous system (e.g., the brain) is disclosed that is specifically designed to provide cooling of an injured central nervous system for neuroprotective, antiepileptogenic, and/or antiepileptic treatments. In one embodiment, a portion of the cooling device is placed in a recess formed by removal of a portion of a patient's skull. An embedded heat-collecting portion of the cooling device is formed to fit in the location of the formed recess and a thermally conductive material of the heat-collecting portion is placed adjacent the dura mater to provide the desired degree of cooling. A heat-dissipating external plate is in thermal contact with the internal plate, and can be selectively sized according to a specific purpose.
摘要:
Semiconductor packages (100) that prevent the leaching of gold from back metal layers (118) into the solder (164) during the die attachment process and methods for fabricating the same are provided. A method in accordance with the invention comprises providing a semiconductor wafer stack (110) including a plurality of metal pads (112). An adhesion/plating layer (115) is formed on a surface (119) of a substrate (116). A layer of gold (118) is plated on a surface of the adhesion/plating layer (115). The layer of gold is etched in a street area (124) using standard photolithography techniques to expose edge portions (128) of the layer of gold (118) and the adhesion/plating layer (115). A layer of barrier metal (130) is deposited to form an edge seal (129) about the exposed edges (128) of the layer of gold (118) the adhesion/plating layer (115). The semiconductor wafer stack (110) is diced in the street area (124) and soldered to a leadframe (162) to form a semiconductor package (100) that provides for an edge seal (128) to prevent the leaching of gold from back metal layers (118) into the solder (162).
摘要:
Semiconductor packages (100) that prevent the leaching of gold from back metal layers (118) into the solder (164) and methods for fabricating the same are provided. An exemplary method comprises providing a semiconductor wafer stack (110) including metal pads (112) and a substrate (116). An adhesion/plating layer (115) is formed on the substrate (116). A layer of gold (118) is plated on the adhesion/plating layer (115). The layer of gold is etched in a street area (124) to expose edge portions (128) of the layer of gold (118) and the adhesion/plating layer (115). A layer of barrier metal (130) is deposited to form an edge seal (129) about the exposed edge portions (128). The edge seal (129) prevents the leaching of gold from back metal layers (118) into the solder (162) when the wafer stack (110) is soldered to a leadframe (162).
摘要:
A method is provided for forming a microelectronic assembly. A semiconductor substrate having a first thickness is mounted to a support substrate with a low temperature adhesive. The semiconductor substrate is thinned from the first thickness to a second thickness. At least one contact formation is formed on the semiconductor substrate, and high energy electromagnetic radiation is directed onto the at least one contact formation to reflow the at least one contact formation.