利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

14 条记录 (耗时 0.015 秒)

    METHOD OF DENSIFYING FILMS IN SEMICONDUCTOR DEVICE
    1.
    发明申请
    METHOD OF DENSIFYING FILMS IN SEMICONDUCTOR DEVICE 有权
    半导体器件中薄膜的测量方法

    公开(公告)号：US20170053799A1

    公开(公告)日：2017-02-23

    申请号：US14929007

    申请日：2015-10-30

    申请人： LAM RESEARCH CORPORATION

    发明人： Bart van Schravendijk ,  Wei Tang

    IPC分类号： H01L21/02 ,  H01L21/324

    CPC分类号： H01L21/02356 ,  C23C16/045 ,  C23C16/56 ,  H01L21/0217 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/02318 ,  H01L21/0234 ,  H01L21/02348 ,  H01L21/3105 ,  H01L21/324 ,  H01L21/76825 ,  H01L21/76828 ,  H01L21/76837

    摘要： Methods of densifying films, cross-linking films, and controlling the stress of films are provided herein. Methods include forming a removable film on a substrate comprising a material to be densified, and annealing the substrate to transfer stress from the removable film to the material and thereby densify the material. Some methods involve depositing a tensile capping layer on the material to be densified on a substrate and annealing the substrate at a temperature greater than about 450° C. Some methods include clamping the substrate including the material to be densified to a shaped pedestal using an electrostatic chuck to apply compressive stress to the material to be densified.

    摘要翻译： 本文提供了致密化膜，交联膜和控制膜应力的方法。 方法包括在包含要致密化的材料的基底上形成可移除的膜，并对基底退火以将应力从可除去的膜传递到材料，从而使材料致密化。 一些方法包括在待密实的材料上沉积基材上的拉伸覆盖层，并在大于约450℃的温度下退火基材。一些方法包括使用静电将包含待致密化材料的基板夹紧到成形的基座 卡盘将压力应力施加到被致密化的材料上。

    HIGHLY SELECTIVE DEPOSITION OF AMORPHOUS CARBON AS A METAL DIFFUSION BARRIER LAYER
    5.
    发明申请
    HIGHLY SELECTIVE DEPOSITION OF AMORPHOUS CARBON AS A METAL DIFFUSION BARRIER LAYER 审中-公开
    作为金属扩散阻挡层的非晶态碳选择性沉积

    公开(公告)号：US20160329213A1

    公开(公告)日：2016-11-10

    申请号：US15095258

    申请日：2016-04-11

    申请人： Lam Research Corporation

    发明人： Wei Tang ,  Jason Daejin Park ,  Patrick A. Van Cleemput ,  Yezdi Dordi

    IPC分类号： H01L21/285 ,  H01L21/3213 ,  H01L21/768

    CPC分类号： H01L21/28562 ,  C23C16/26 ,  H01L21/02115 ,  H01L21/02274 ,  H01L21/76844 ,  H01L23/53238

    摘要： A method for providing a metal diffusion barrier layer comprising providing a substrate including a metal layer; depositing a dielectric layer on the metal layer; defining a feature in the dielectric layer, wherein the feature includes side walls defined by the dielectric layer and a bottom surface defined by the metal layer; selectively depositing a metal diffusion barrier layer on the side walls of the feature and not depositing the metal diffusion barrier layer on the bottom surface of the feature, wherein the metal diffusion barrier layer includes amorphous carbon; and depositing metal in the feature.

    摘要翻译： 一种提供金属扩散阻挡层的方法，包括提供包括金属层的基板; 在金属层上沉积介电层; 限定介电层中的特征，其中该特征包括由介电层限定的侧壁和由金属层限定的底面; 在特征的侧壁上选择性地沉积金属扩散阻挡层，并且不在该特征的底表面上沉积金属扩散阻挡层，其中金属扩散阻挡层包括无定形碳; 并在特征中沉积金属。