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    PROCESS KIT FOR RF PHYSICAL VAPOR DEPOSITION
    3.
    发明申请
    PROCESS KIT FOR RF PHYSICAL VAPOR DEPOSITION 审中-公开
    RF物理蒸气沉积工艺套件

    公开(公告)号：US20110036709A1

    公开(公告)日：2011-02-17

    申请号：US12850312

    申请日：2010-08-04

    申请人： Lara Hawrylchak ,  Kirankumar Savandaiah ,  Muhammad M. Rasheed ,  Rongjun Wang ,  Adolph Miller Allen ,  Zhigang Xie

    发明人： Lara Hawrylchak ,  Kirankumar Savandaiah ,  Muhammad M. Rasheed ,  Rongjun Wang ,  Adolph Miller Allen ,  Zhigang Xie

    IPC分类号： C23C14/34

    CPC分类号： H01L21/67017 ,  C23C14/34 ,  C23C14/564 ,  H01J37/3408 ,  H01J37/3447

    摘要： Embodiments of the invention generally relate to a process kit for a semiconductor processing chamber, and a semiconductor processing chamber having a kit. More specifically, embodiments described herein relate to a process kit including a cover ring, a shield, and an isolator for use in a physical deposition chamber. The components of the process kit work alone and in combination to significantly reduce particle generation and stray plasmas. In comparison with existing multiple part shields, which provide an extended RF return path contributing to RF harmonics causing stray plasma outside the process cavity, the components of the process kit reduce the RF return path thus providing improved plasma containment in the interior processing region.

    摘要翻译： 本发明的实施例一般涉及用于半导体处理室的处理套件和具有套件的半导体处理室。 更具体地，本文所述的实施例涉及包括用于物理沉积室中的盖环，屏蔽和隔离器的处理套件。 过程组件的组件单独工作并组合起来，以显着减少颗粒产生和杂散等离子体。 与现有的多部分屏蔽相比，其提供了有助于RF谐波的扩展的RF返回路径，从而在处理空腔之外引起杂散等离子体，处理套件的部件降低了RF返回路径，从而在内部处理区域中提供了改进的等离子体容纳物。

    TUNNELING-JUNCTION SOLAR CELL WITH SHALLOW COUNTER DOPING LAYER IN THE SUBSTRATE
    4.
    发明申请
    TUNNELING-JUNCTION SOLAR CELL WITH SHALLOW COUNTER DOPING LAYER IN THE SUBSTRATE 审中-公开
    隧道连接太阳能电池与基板中的微计数器层

    公开(公告)号：US20130298973A1

    公开(公告)日：2013-11-14

    申请号：US13601521

    申请日：2012-08-31

    申请人： Zhigang Xie ,  Jiunn Benjamin Heng ,  Jianming Fu ,  Zheng Xu

    发明人： Zhigang Xie ,  Jiunn Benjamin Heng ,  Jianming Fu ,  Zheng Xu

    IPC分类号： H01L31/0352 ,  H01L31/18

    CPC分类号： H01L31/035272 ,  H01L31/072 ,  H01L31/0747 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

    摘要： One embodiment of the present invention provides a tunneling junction solar cell. The solar cell includes a base layer, an emitter layer situated adjacent to the shallow counter doping layer, a surface field layer situated adjacent to a side of the base layer opposite to the shallow counter doping layer, a front-side electrode, and a back-side electrode. The base layer includes a shallow counter doping layer having a conduction doping type that is opposite to a remainder of the base layer. The emitter layer has a bandgap that is wider than that of the base layer.

    摘要翻译： 本发明的一个实施例提供一种隧道结太阳能电池。 太阳能电池包括基底层，位于浅反相掺杂层附近的发射极层，位于与浅反相掺杂层相对的基底层侧面附近的表面场层，前侧电极和背面 侧电极。 基层包括具有与基层的其余部分相反的导电掺杂类型的浅反掺杂层。 发射极层具有比基底层宽的带隙。

    METHODS FOR FORMING A TITANIUM NITRIDE LAYER
    5.
    发明申请
    METHODS FOR FORMING A TITANIUM NITRIDE LAYER 失效
    形成硝酸钛层的方法

    公开(公告)号：US20090239378A1

    公开(公告)日：2009-09-24

    申请号：US12050419

    申请日：2008-03-18

    申请人： KEYVAN KASHEFIZADEH ,  Zhigang Xie ,  Ashish S. Bodke ,  Mei Chang

    发明人： KEYVAN KASHEFIZADEH ,  Zhigang Xie ,  Ashish S. Bodke ,  Mei Chang

    IPC分类号： H01L21/44

    CPC分类号： H01L21/76843 ,  C23C14/0036 ,  C23C14/0641 ,  C23C14/351 ,  H01L21/2855 ,  H01L21/7685

    摘要： Methods for forming titanium nitride layers are provided herein. In some embodiments, a method of forming a titanium nitride layer on a substrate may include providing a substrate into a processing chamber having a target comprising titanium disposed therein; supplying a nitrogen-containing gas into the processing chamber; sputtering a titanium source material from the target in the presence of a plasma formed from the nitrogen-containing gas to deposit a titanium nitride layer on the substrate; and upon depositing the titanium nitride layer to a desired thickness, forming a magnetic field that biases ions in the processing chamber away from the substrate.

    摘要翻译： 本文提供了形成氮化钛层的方法。 在一些实施例中，在衬底上形成氮化钛层的方法可以包括将衬底提供到具有设置在其中的钛的靶的处理室中; 向处理室供应含氮气体; 在由含氮气体形成的等离子体存在下溅射钛源材料，以在衬底上沉积氮化钛层; 并且在将氮化钛层沉积到所需厚度之后，形成使处理室中的离子偏离衬底的磁场。

    Methods of preventing plasma induced damage during substrate processing
    6.
    发明授权
    Methods of preventing plasma induced damage during substrate processing 有权
    在衬底加工过程中防止等离子体损伤的方法

    公开(公告)号：US09399812B2

    公开(公告)日：2016-07-26

    申请号：US13270276

    申请日：2011-10-11

    申请人： Zhigang Xie ,  Mei Chang

    发明人： Ashish Subhash Bodke ,  Zhigang Xie ,  Mei Chang

    IPC分类号： C23C14/00 ,  C23C14/32 ,  C23C14/04 ,  C23C14/06 ,  C23C14/16 ,  C23C14/34 ,  H01L21/683

    CPC分类号： C23C14/046 ,  C23C14/0641 ,  C23C14/165 ,  C23C14/3492 ,  H01L21/6831

    摘要： Methods for processing substrates are provided herein. In some embodiments, a method of processing a substrate within a process chamber having an electrostatic chuck to support a substrate in a processing region of the process chamber and a target disposed opposite the electrostatic chuck, wherein the target comprises a target material to be deposited on the substrate, may include disposing a substrate on the electrostatic chuck; providing a process gas to the processing region; igniting a plasma in the processing region from the process gas while the substrate is disposed on the electrostatic chuck with no chucking voltage provided to clamp the substrate to the electrostatic chuck; and depositing target material on the substrate to form a first barrier layer while no chucking voltage is provided, wherein the target material is sputtered from the target via the plasma.

    摘要翻译： 本文提供了处理基板的方法。 在一些实施例中，一种在具有静电卡盘的处理室内处理衬底以在处理室的处理区域中支撑衬底和与静电卡盘相对设置的靶的处理衬底的方法，其中所述靶包括待沉积在靶材料上的靶材料 基板可以包括将基板设置在静电卡盘上; 向处理区域提供处理气体; 在将基板设置在静电卡盘上而没有提供夹持电压以将基板夹持到静电卡盘的同时，将来自处理气体的处理区域中的等离子体点燃; 以及在基板上沉积目标材料以形成第一阻挡层，同时不提供夹持电压，其中目标材料经由等离子体从靶溅射。

    Methods for forming a titanium nitride layer
    8.
    发明授权
    Methods for forming a titanium nitride layer 失效
    形成氮化钛层的方法

    公开(公告)号：US07846824B2

    公开(公告)日：2010-12-07

    申请号：US12050419

    申请日：2008-03-18

    申请人： Keyvan Kashefizadeh ,  Zhigang Xie ,  Ashish S. Bodke ,  Mei Chang

    发明人： Keyvan Kashefizadeh ,  Zhigang Xie ,  Ashish S. Bodke ,  Mei Chang

    IPC分类号： H01L21/22

    CPC分类号： H01L21/76843 ,  C23C14/0036 ,  C23C14/0641 ,  C23C14/351 ,  H01L21/2855 ,  H01L21/7685

    摘要： Methods for forming titanium nitride layers are provided herein. In some embodiments, a method of forming a titanium nitride layer on a substrate may include providing a substrate into a processing chamber having a target comprising titanium disposed therein; supplying a nitrogen-containing gas into the processing chamber; sputtering a titanium source material from the target in the presence of a plasma formed from the nitrogen-containing gas to deposit a titanium nitride layer on the substrate; and upon depositing the titanium nitride layer to a desired thickness, forming a magnetic field that biases ions in the processing chamber away from the substrate.

    摘要翻译： 本文提供了形成氮化钛层的方法。 在一些实施例中，在衬底上形成氮化钛层的方法可以包括将衬底提供到具有设置在其中的钛的靶的处理室中; 向处理室供应含氮气体; 在由含氮气体形成的等离子体存在下溅射钛源材料，以在衬底上沉积氮化钛层; 并且在将氮化钛层沉积到所需厚度之后，形成使处理室中的离子偏离衬底的磁场。