公开(公告)号：US20130087452A1

公开(公告)日：2013-04-11

申请号：US13662391

申请日：2012-10-26

申请人： Lara Hawrylchak ,  Kirankumar Savandaiah ,  Muhammed M. Rasheed ,  Rongjun Wang ,  Adolph Miller Allen ,  Zhigang Xie

发明人： Lara Hawrylchak ,  Kirankumar Savandaiah ,  Muhammed M. Rasheed ,  Rongjun Wang ,  Adolph Miller Allen ,  Zhigang Xie

IPC分类号： H01L21/67

CPC分类号： H01L21/67017 ,  C23C14/34 ,  C23C14/564 ,  H01J37/3408 ,  H01J37/3447

摘要： Embodiments of the invention generally relate to a process kit for a semiconductor processing chamber, and a semiconductor processing chamber having a kit. More specifically, embodiments described herein relate to a process kit including a cover ring, a shield, and an isolator for use in a physical deposition chamber. The components of the process kit work alone and in combination to significantly reduce particle generation and stray plasmas. In comparison with existing multiple part shields, which provide an extended RF return path contributing to RF harmonics causing stray plasma outside the process cavity, the components of the process kit reduce the RF return path thus providing improved plasma containment in the interior processing region.

公开(公告)号：US20100252417A1

公开(公告)日：2010-10-07

申请号：US12754473

申请日：2010-04-05

申请人： Adolph Miller Allen ,  Lara Hawrylchak ,  Zhigang Xie ,  Muhammad M. Rasheed ,  Rongjun Wang ,  Xianmin Tang ,  Zhendong Liu ,  Tza-Jing Gung ,  Srinivas Gandikota ,  Mei Chang ,  Michael S. Cox ,  Donny Young ,  Kirankumar Savandaiah ,  Zhenbin Ge

发明人： Adolph Miller Allen ,  Lara Hawrylchak ,  Zhigang Xie ,  Muhammad M. Rasheed ,  Rongjun Wang ,  Xianmin Tang ,  Zhendong Liu ,  Tza-Jing Gung ,  Srinivas Gandikota ,  Mei Chang ,  Michael S. Cox ,  Donny Young ,  Kirankumar Savandaiah ,  Zhenbin Ge

IPC分类号： C23C14/34

CPC分类号： C23C14/564 ,  C23C14/345 ,  C23C14/3492 ,  C23C14/35 ,  C23C14/548 ,  H01J37/32642 ,  H01J37/3405 ,  H01J37/3408 ,  H01J37/3441 ,  H01J37/3455

摘要： Embodiments of the invention generally provide a processing chamber used to perform a physical vapor deposition (PVD) process and methods of depositing multi-compositional films. The processing chamber may include: an improved RF feed configuration to reduce any standing wave effects; an improved magnetron design to enhance RF plasma uniformity, deposited film composition and thickness uniformity; an improved substrate biasing configuration to improve process control; and an improved process kit design to improve RF field uniformity near the critical surfaces of the substrate. The method includes forming a plasma in a processing region of a chamber using an RF supply coupled to a multi-compositional target, translating a magnetron relative to the multi-compositional target, wherein the magnetron is positioned in a first position relative to a center point of the multi-compositional target while the magnetron is translating and the plasma is formed, and depositing a multi-compositional film on a substrate in the chamber.

摘要翻译： 本发明的实施例通常提供用于执行物理气相沉积（PVD）工艺的处理室和沉积多组分膜的方法。 处理室可以包括：改进的RF馈送配置以减少任何驻波效应; 改进的磁控管设计，以增强RF等离子体均匀性，沉积膜组成和厚度均匀性; 改进的衬底偏置结构以改善工艺控制; 以及改进的工艺组件设计，以改善衬底临界表面附近的RF场均匀性。 该方法包括使用耦合到多组分靶的RF电源在室的处理区域中形成等离子体，相对于多组分靶物平移磁控管，其中磁控管相对于中心点位于第一位置 的多组分靶，同时磁控管正在平移并且形成等离子体，并且在腔室中的基底上沉积多组分膜。

公开(公告)号：US20110036709A1

公开(公告)日：2011-02-17

申请号：US12850312

申请日：2010-08-04

申请人： Lara Hawrylchak ,  Kirankumar Savandaiah ,  Muhammad M. Rasheed ,  Rongjun Wang ,  Adolph Miller Allen ,  Zhigang Xie

发明人： Lara Hawrylchak ,  Kirankumar Savandaiah ,  Muhammad M. Rasheed ,  Rongjun Wang ,  Adolph Miller Allen ,  Zhigang Xie

IPC分类号： C23C14/34

CPC分类号： H01L21/67017 ,  C23C14/34 ,  C23C14/564 ,  H01J37/3408 ,  H01J37/3447

摘要： Embodiments of the invention generally relate to a process kit for a semiconductor processing chamber, and a semiconductor processing chamber having a kit. More specifically, embodiments described herein relate to a process kit including a cover ring, a shield, and an isolator for use in a physical deposition chamber. The components of the process kit work alone and in combination to significantly reduce particle generation and stray plasmas. In comparison with existing multiple part shields, which provide an extended RF return path contributing to RF harmonics causing stray plasma outside the process cavity, the components of the process kit reduce the RF return path thus providing improved plasma containment in the interior processing region.

摘要翻译： 本发明的实施例一般涉及用于半导体处理室的处理套件和具有套件的半导体处理室。 更具体地，本文所述的实施例涉及包括用于物理沉积室中的盖环，屏蔽和隔离器的处理套件。 过程组件的组件单独工作并组合起来，以显着减少颗粒产生和杂散等离子体。 与现有的多部分屏蔽相比，其提供了有助于RF谐波的扩展的RF返回路径，从而在处理空腔之外引起杂散等离子体，处理套件的部件降低了RF返回路径，从而在内部处理区域中提供了改进的等离子体容纳物。

公开(公告)号：US08133368B2

公开(公告)日：2012-03-13

申请号：US12263013

申请日：2008-10-31

申请人： Lara Hawrylchak ,  Xianmin Tang ,  Vijay Parhke ,  Rongjun Wang

发明人： Lara Hawrylchak ,  Xianmin Tang ,  Vijay Parhke ,  Rongjun Wang

IPC分类号： C23C14/00 ,  C23C14/06 ,  C23C14/08 ,  C23C14/14

CPC分类号： C23C14/3407

摘要： Embodiments of the invention provide encapsulated sputtering targets and methods for preparing such targets prior to a physical vapor deposition (PVD) process. In one embodiment, an encapsulated target for PVD is provided which includes a target layer containing lanthanum disposed on a backing plate and an encapsulation layer containing titanium disposed on or over the target layer. In one example, the target layer contains metallic lanthanum or lanthanum oxide and the encapsulation layer contains titanium. The encapsulation layer may have a thickness within a range from about 1,000 Å to about 2,000 Å. In another embodiment, a method for preparing an encapsulated target prior to a PVD process is provided which includes positioning an encapsulated target within a PVD chamber and exposing the encapsulation layer to a plasma while removing the encapsulation layer and revealing an upper surface of the target layer.

摘要翻译： 本发明的实施方案提供了封装的溅射靶和在物理气相沉积（PVD））方法之前制备这些靶的方法。 在一个实施方案中，提供了用于PVD的包封的靶，其包括设置在背板上的含有镧的靶层和包含设置在靶层上或上的钛的包封层。 在一个实例中，目标层包含金属镧或氧化镧，并且包封层含有钛。 封装层的厚度可以在大约从1000到大约2000的范围内。 在另一个实施方案中，提供了一种用于在PVD工艺之前制备封装的靶的方法，其包括将包封的靶定位在PVD室内并将封装层暴露于等离子体，同时移除封装层并露出靶层的上表面 。

公开(公告)号：US20100108500A1

公开(公告)日：2010-05-06

申请号：US12263013

申请日：2008-10-31

申请人： LARA HAWRYLCHAK ,  Xianmin Tang ,  Vijay Parhke ,  Rongjun Wang

发明人： LARA HAWRYLCHAK ,  Xianmin Tang ,  Vijay Parhke ,  Rongjun Wang

IPC分类号： C23C14/34 ,  C23F1/00

CPC分类号： C23C14/3407

摘要： Embodiments of the invention provide encapsulated sputtering targets and methods for preparing such targets prior to a physical vapor deposition (PVD) process. In one embodiment, an encapsulated target for PVD is provided which includes a target layer containing lanthanum disposed on a backing plate and an encapsulation layer containing titanium disposed on or over the target layer. In one example, the target layer contains metallic lanthanum or lanthanum oxide and the encapsulation layer contains titanium. The encapsulation layer may have a thickness within a range from about 1,000 Å to about 2,000 Å. In another embodiment, a method for preparing an encapsulated target prior to a PVD process is provided which includes positioning an encapsulated target within a PVD chamber and exposing the encapsulation layer to a plasma while removing the encapsulation layer and revealing an upper surface of the target layer.

摘要翻译： 本发明的实施方案提供了封装的溅射靶和在物理气相沉积（PVD））方法之前制备这些靶的方法。 在一个实施方案中，提供了用于PVD的包封的靶，其包括设置在背板上的含有镧的靶层和包含设置在靶层上或上的钛的包封层。 在一个实例中，目标层包含金属镧或氧化镧，并且包封层含有钛。 封装层的厚度可以在大约从1000到大约2000的范围内。 在另一个实施方案中，提供了一种用于在PVD工艺之前制备封装的靶的方法，其包括将包封的靶定位在PVD室内并将封装层暴露于等离子体，同时移除封装层并露出靶层的上表面 。

公开(公告)号：US08435392B2

公开(公告)日：2013-05-07

申请号：US13397184

申请日：2012-02-15

申请人： Lara Hawrylchak ,  Xianmin Tang ,  Vijay Parhke ,  Rongjun Wang

发明人： Lara Hawrylchak ,  Xianmin Tang ,  Vijay Parhke ,  Rongjun Wang

IPC分类号： C23C14/00 ,  C23C14/06 ,  C23C14/08 ,  C23C14/14

CPC分类号： C23C14/3407

摘要： Embodiments of the invention provide encapsulated sputtering targets for physical vapor deposition. In one embodiment, an encapsulated target contains a target layer containing a first metal or an oxide of the first metal disposed over a backing plate, an adhesion interlayer disposed between the target layer and the backing plate, and an encapsulation layer containing a second metal or an oxide of the second metal disposed over the target layer and an annular sidewall of the backing plate. The target layer is encapsulated by the backing plate and the encapsulation layer and the first metal is different than the second metal. In some examples, the first metal is lanthanum or lithium and the target layer contains metallic lanthanum, lanthanum oxide, or metallic lithium. In other examples, the second metal is titanium or aluminum and the encapsulation layer contains metallic titanium, titanium oxide, metallic aluminum, or aluminum oxide.

摘要翻译： 本发明的实施例提供用于物理气相沉积的封装溅射靶。 在一个实施方案中，包封的靶含有包含设置在背板上的第一金属或第一金属的氧化物的目标层，设置在靶层和背衬板之间的粘合中间层，以及包含第二金属或 设置在目标层上的第二金属的氧化物和背板的环形侧壁。 目标层被背板封装，并且封装层和第一金属不同于第二金属。 在一些实例中，第一金属是镧或锂，靶层含有金属镧，氧化镧或金属锂。 在其他实例中，第二金属是钛或铝，并且包封层含有金属钛，氧化钛，金属铝或氧化铝。

公开(公告)号：US20120138457A1

公开(公告)日：2012-06-07

申请号：US13397184

申请日：2012-02-15

申请人： LARA HAWRYLCHAK ,  Xianmin Tang ,  Vijay Parhke ,  Rongjun Wang

发明人： LARA HAWRYLCHAK ,  Xianmin Tang ,  Vijay Parhke ,  Rongjun Wang

IPC分类号： C23C14/34

CPC分类号： C23C14/3407

摘要： Embodiments of the invention provide encapsulated sputtering targets for physical vapor deposition. In one embodiment, an encapsulated target contains a target layer containing a first metal or an oxide of the first metal disposed over a backing plate, an adhesion interlayer disposed between the target layer and the backing plate, and an encapsulation layer containing a second metal or an oxide of the second metal disposed over the target layer and an annular sidewall of the backing plate. The target layer is encapsulated by the backing plate and the encapsulation layer and the first metal is different than the second metal. In some examples, the first metal is lanthanum or lithium and the target layer contains metallic lanthanum, lanthanum oxide, or metallic lithium. In other examples, the second metal is titanium or aluminum and the encapsulation layer contains metallic titanium, titanium oxide, metallic aluminum, or aluminum oxide.

摘要翻译： 本发明的实施例提供用于物理气相沉积的封装溅射靶。 在一个实施方案中，包封的靶含有包含设置在背板上的第一金属或第一金属的氧化物的目标层，设置在靶层和背衬板之间的粘合中间层，以及包含第二金属或 设置在目标层上的第二金属的氧化物和背板的环形侧壁。 目标层被背板封装，并且封装层和第一金属不同于第二金属。 在一些实例中，第一金属是镧或锂，靶层含有金属镧，氧化镧或金属锂。 在其他实例中，第二金属是钛或铝，并且包封层含有金属钛，氧化钛，金属铝或氧化铝。

公开(公告)号：US20070190780A1

公开(公告)日：2007-08-16

申请号：US11691617

申请日：2007-03-27

申请人： HUA CHUNG ,  Rongjun Wang ,  Nirmalya Maity

发明人： HUA CHUNG ,  Rongjun Wang ,  Nirmalya Maity

IPC分类号： H01L21/44

CPC分类号： C23C16/45529 ,  C23C16/02 ,  C23C16/0281 ,  C23C16/14 ,  H01L21/28562 ,  H01L21/76843 ,  H01L21/76862 ,  H01L21/76871 ,  H01L21/76876

摘要： Methods for processing substrate to deposit barrier layers of one or more material layers by atomic layer deposition are provided. In one aspect, a method is provided for processing a substrate including depositing a metal nitride barrier layer on at least a portion of a substrate surface by alternately introducing one or more pulses of a metal containing compound and one or more pulses of a nitrogen containing compound and depositing a metal barrier layer on at least a portion of the metal nitride barrier layer by alternately introducing one or more pulses of a metal containing compound and one or more pulses of a reductant. A soak process may be performed on the substrate surface before deposition of the metal nitride barrier layer and/or metal barrier layer.

摘要翻译： 提供了通过原子层沉积处理衬底以沉积一层或多层材料层的阻挡层的方法。 在一个方面，提供了一种处理衬底的方法，包括通过交替地引入含有金属的化合物的一种或多种脉冲和含氮化合物的一个或多个脉冲，在衬底表面的至少一部分上沉积金属氮化物阻挡层 以及通过交替地引入一种或多种含金属化合物的脉冲和一种或多种还原剂的脉冲，在金属氮化物阻挡层的至少一部分上沉积金属阻挡层。 可以在沉积金属氮化物阻挡层和/或金属阻挡层之前在衬底表面上进行浸泡工艺。

公开(公告)号：US07211508B2

公开(公告)日：2007-05-01

申请号：US10871864

申请日：2004-06-18

申请人： Hua Chung ,  Rongjun Wang ,  Nirmalya Maity

发明人： Hua Chung ,  Rongjun Wang ,  Nirmalya Maity

IPC分类号： H01L21/4763

CPC分类号： C23C16/45529 ,  C23C16/02 ,  C23C16/0281 ,  C23C16/14 ,  H01L21/28562 ,  H01L21/76843 ,  H01L21/76862 ,  H01L21/76871 ,  H01L21/76876

摘要： Methods for processing substrate to deposit barrier layers of one or more material layers by atomic layer deposition are provided. In one aspect, a method is provided for processing a substrate including depositing a metal nitride barrier layer on at least a portion of a substrate surface by alternately introducing one or more pulses of a metal containing compound and one or more pulses of a nitrogen containing compound and depositing a metal barrier layer on at least a portion of the metal nitride barrier layer by alternately introducing one or more pulses of a metal containing compound and one or more pulses of a reductant. A soak process may be performed on the substrate surface before deposition of the metal nitride barrier layer and/or metal barrier layer.

摘要翻译： 提供了通过原子层沉积处理衬底以沉积一层或多层材料层的阻挡层的方法。 在一个方面，提供了一种处理衬底的方法，包括通过交替地引入含有金属的化合物的一种或多种脉冲和含氮化合物的一个或多个脉冲，在衬底表面的至少一部分上沉积金属氮化物阻挡层 以及通过交替地引入一种或多种含金属化合物的脉冲和一种或多种还原剂的脉冲，在金属氮化物阻挡层的至少一部分上沉积金属阻挡层。 可以在沉积金属氮化物阻挡层和/或金属阻挡层之前在衬底表面上进行浸泡工艺。

公开(公告)号：US20070059502A1

公开(公告)日：2007-03-15

申请号：US11511869

申请日：2006-08-29

申请人： Rongjun Wang ,  Hua Chung ,  Xianmin Tang ,  Jenn Wang ,  Wei Wang ,  Yoichiro Tanaka ,  Jick Yu ,  Praburam Gopalraja

发明人： Rongjun Wang ,  Hua Chung ,  Xianmin Tang ,  Jenn Wang ,  Wei Wang ,  Yoichiro Tanaka ,  Jick Yu ,  Praburam Gopalraja

IPC分类号： B32B7/00 ,  B32B3/00 ,  C23C16/00 ,  B05D5/12 ,  C23C14/00

CPC分类号： C23C14/046 ,  C23C14/0641 ,  C23C14/165 ,  H01L21/2855 ,  H01L21/76844 ,  H01L21/76846 ,  H01L21/76873 ,  H01L23/485 ,  H01L23/53238 ,  H01L2924/0002 ,  Y10T428/24917 ,  Y10T428/24926 ,  H01L2924/00

摘要： A fabrication method and a product for the deposition of a conductive barrier or other liner layer in a vertical electrical interconnect structure. One embodiment includes within a a hole through a dielectric layer a barrier layer of RuTaN, an adhesion layer of RuTa, and a copper seed layer forming a liner for electroplating of copper. The ruthenium content is preferably greater than 50 at % and more preferably at least 80 at % but less than 95 at %. The barrier and adhesion layers may both be sputter deposited. Other platinum-group elements substitute for the ruthenium and other refractory metals substitute for the tantalum. Aluminum alloying into RuTa when annealed presents a moisture barrier. Copper contacts include different alloying fractions of RuTa to shift the work function to the doping type.

摘要翻译： 用于在垂直电互连结构中沉积导电屏障或其它衬垫层的制造方法和产品。 一个实施方案包括通过电介质层的孔，RuTaN的阻挡层，RuTa的粘附层和形成铜电镀衬垫的铜籽晶层。 钌含量优选大于50原子％，更优选至少80原子％但小于95原子％。 阻挡层和粘附层可以被溅射沉积。 其他铂族元素代替钌和其他难熔金属代替钽。 当退火时铝合金化成RuTa呈现防潮层。 铜触点包括RuTa的不同合金分数，以将功函数转移到掺杂类型。