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公开(公告)号：US06720631B2
公开(公告)日：2004-04-13
申请号：US08954430
申请日：1997-10-20
IPC分类号： H01L2976
CPC分类号： H01L29/0847 , H01L29/42368 , H01L29/6656 , H01L29/6659 , H01L29/66636 , H01L29/7833 , Y10S257/90
摘要： A transistor comprising a deposited dual-layer spacer structure and method of fabrication. A polysilicon layer is deposited over a gate dielectric, and is subsequently etched to form the polysilicon gate electrode of the transistor. Next, oxide is deposited over the surface of the gate electrode, followed by deposition of a second dielectric layer. Spacers are then formed adjacent to the gate electrode by etching back the second dielectric layer using a substantially anisotropic etch which etches the second dielectric layer faster than it etches the oxide.
摘要翻译： 一种包括沉积的双层间隔结构和制造方法的晶体管。 多晶硅层沉积在栅极电介质上，随后被蚀刻以形成晶体管的多晶硅栅电极。 接下来，在栅电极的表面上沉积氧化物，随后沉积第二介电层。 然后通过使用蚀刻第二介电层的基本上各向异性的蚀刻比蚀刻氧化物更快地蚀刻回第二介电层而形成与栅电极相邻的间隔物。
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2.发明授权Method of making a transistor having a deposited dual-layer spacer structure 失效制造具有沉积的双层间隔结构的晶体管的方法
公开(公告)号：US5714413A
公开(公告)日：1998-02-03
申请号：US570726
申请日：1995-12-11
IPC分类号： H01L21/336 , H01L29/08 , H01L29/423 , H01L29/78
CPC分类号： H01L29/6656 , H01L29/0847 , H01L29/42368 , H01L29/6659 , H01L29/66636 , H01L29/7833 , Y10S257/90
摘要： A transistor comprising a deposited dual-layer spacer structure and method of fabrication. A polysilicon layer is deposited over a gate dielectric, and is subsequently etched to form the polysilicon gate electrode of the transistor. Next, oxide is deposited over the surface of the gate electrode, followed by deposition of a second dielectric layer. Spacers are then formed adjacent to the gate electrode by etching back the second dielectric layer using a substantially anisotropic etch which etches the second dielectric layer faster than it etches the oxide.
摘要翻译： 一种晶体管，包括沉积的双层间隔结构和制造方法。 多晶硅层沉积在栅极电介质上，随后被蚀刻以形成晶体管的多晶硅栅电极。 接下来，在栅电极的表面上沉积氧化物，随后沉积第二介电层。 然后通过使用蚀刻第二介电层的基本上各向异性的蚀刻比蚀刻氧化物更快地蚀刻回第二介电层而形成与栅电极相邻的间隔物。
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公开(公告)号：US07659196B2
公开(公告)日：2010-02-09
申请号：US11643483
申请日：2006-12-20
IPC分类号： H01L21/4763 , H01L21/44 , H01L21/311
CPC分类号： H01L21/31144 , H01L21/02063 , H01L21/32134 , H01L21/76802 , H01L21/76808 , H01L21/76813
摘要： Described herein are embodiments of a method that includes forming a hard mask over an interlayer dielectric layer, patterning said hard mask, etching said interlayer dielectric layer, and removing said hard mask during a post-etch clean with a wet etchant having a selectivity to etch said hard mask at a greater rate than said interlayer dielectric layer.
摘要翻译： 这里描述的方法的实施例包括在层间电介质层上形成硬掩模，图案化所述硬掩模，蚀刻所述层间电介质层，以及在用蚀刻选择性的湿式蚀刻剂的蚀刻前清洁期间去除所述硬掩模 所述硬掩模以比所述层间电介质层更大的速率。
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4.发明授权公开(公告)号：US07649239B2
公开(公告)日：2010-01-19
申请号：US11429165
申请日：2006-05-04
申请人： Makarem A. Hussein , Boyan Boyanov
发明人： Makarem A. Hussein , Boyan Boyanov
IPC分类号： H01L29/40 , H01L21/331 , H01L21/76 , H01L21/4763
CPC分类号： H01L21/76834 , H01L21/7682 , H01L21/76877 , H01L23/5222 , H01L23/53223 , H01L23/53238 , H01L23/53252 , H01L23/53276 , H01L23/53295 , H01L2221/1094 , H01L2924/0002 , H01L2924/00
摘要： A plurality of metal interconnects incorporating dielectric spacers and a method to form such dielectric spacers are described. In one embodiment, the dielectric spacers adjacent to neighboring metal interconnects are discontiguous from one another. In another embodiment, the dielectric spacers may provide a region upon which un-landed vias may effectively land.
摘要翻译： 描述了包含电介质间隔物的多个金属互连件和形成这种介电间隔物的方法。 在一个实施例中，与相邻金属互连件相邻的电介质间隔物彼此不连续。 在另一个实施例中，电介质间隔件可提供未着陆过孔可有效降落的区域。
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公开(公告)号：US06406995B1
公开(公告)日：2002-06-18
申请号：US09345586
申请日：1999-06-30
IPC分类号： H01L214763
CPC分类号： H01L21/76808 , H01L21/76835
摘要： A method of forming an interconnection including the steps of forming a sacrificial material that comprises a physical property that is generally insensitive to a photo-reaction in a via through a dielectric material to a masking material over a conductive material. The method also includes forming a trench over in the dielectric material over the via and removing the sacrificial material from the via.
摘要翻译： 一种形成互连的方法，包括以下步骤：形成牺牲材料，所述牺牲材料包括通过电介质材料的通孔中的光反应通常对导电材料上的掩模材料不敏感的物理性质。 该方法还包括在通孔之上的电介质材料中形成沟槽，并从通孔去除牺牲材料。
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6.发明授权Antireflective coatings for via fill and photolithography applications and methods of preparation thereof 有权用于通孔填充和光刻应用的抗反射涂层及其制备方法公开(公告)号：US08053159B2
公开(公告)日：2011-11-08
申请号：US10717028
申请日：2003-11-18
申请人： Bo Li , Joseph Kennedy , Nancy Iwamoto , Victor Lu , Roger Leung , Mark A. Fradkin , Makarem A. Hussein , Michael D. Goodner
发明人： Bo Li , Joseph Kennedy , Nancy Iwamoto , Victor Lu , Roger Leung , Mark A. Fradkin , Makarem A. Hussein , Michael D. Goodner
IPC分类号： G03C1/00 , C04B41/50 , D06M15/643 , C07F7/18
CPC分类号： C09D183/04 , C09D183/08 , G03F7/0751 , G03F7/0752 , G03F7/091
摘要： An absorbing composition is described herein that includes at least one inorganic-based compound, at least one absorbing compound, and at least one material modification agent. In addition, methods of making an absorbing composition are also described that includes: a) combining at least one inorganic-based compound, at least one absorbing compound, at least one material modification agent, and one or more solvents to form a reaction mixture, wherein the at least one material modification agent comprises at least one acid and water; and b) heating the reaction mixture to form an absorbing material, a coating or a film.
摘要翻译： 本文描述的吸收组合物包括至少一种无机基化合物，至少一种吸收化合物和至少一种材料改性剂。 此外，还描述了制备吸收组合物的方法，其包括：a）将至少一种无机基化合物，至少一种吸收化合物，至少一种材料改性剂和一种或多种溶剂组合以形成反应混合物， 其中所述至少一种材料改性剂包含至少一种酸和水; 和b）加热反应混合物以形成吸收材料，涂层或膜。
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7.发明申请公开(公告)号：US20110171823A1
公开(公告)日：2011-07-14
申请号：US13069253
申请日：2011-03-22
申请人： Makarem A. Hussein , Boyan Boyanov
发明人： Makarem A. Hussein , Boyan Boyanov
IPC分类号： H01L21/28
CPC分类号： H01L21/76834 , H01L21/7682 , H01L21/76877 , H01L23/5222 , H01L23/53223 , H01L23/53238 , H01L23/53252 , H01L23/53276 , H01L23/53295 , H01L2221/1094 , H01L2924/0002 , H01L2924/00
摘要： A plurality of metal interconnects incorporating dielectric spacers and a method to form such dielectric spacers are described. In one embodiment, the dielectric spacers adjacent to neighboring metal interconnects are discontiguous from one another. In another embodiment, the dielectric spacers may provide a region upon which un-landed vias may effectively land.
摘要翻译： 描述了包含电介质间隔物的多个金属互连件和形成这种介电间隔物的方法。 在一个实施例中，与相邻金属互连件相邻的电介质间隔物彼此不连续。 在另一个实施例中，电介质间隔件可提供未着陆过孔可有效降落的区域。
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8.发明授权公开(公告)号：US07923760B2
公开(公告)日：2011-04-12
申请号：US12630771
申请日：2009-12-03
申请人： Makarem A. Hussein , Boyan Boyanov
发明人： Makarem A. Hussein , Boyan Boyanov
CPC分类号： H01L21/76834 , H01L21/7682 , H01L21/76877 , H01L23/5222 , H01L23/53223 , H01L23/53238 , H01L23/53252 , H01L23/53276 , H01L23/53295 , H01L2221/1094 , H01L2924/0002 , H01L2924/00
摘要： A plurality of metal interconnects incorporating dielectric spacers and a method to form such dielectric spacers are described. In one embodiment, the dielectric spacers adjacent to neighboring metal interconnects are discontiguous from one another. In another embodiment, the dielectric spacers may provide a region upon which un-landed vias may effectively land.
摘要翻译： 描述了包含电介质间隔物的多个金属互连件和形成这种介电间隔物的方法。 在一个实施例中，与相邻金属互连件相邻的电介质间隔物彼此不连续。 在另一个实施例中，电介质间隔件可提供未着陆过孔可有效降落的区域。
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公开(公告)号：US20090001594A1
公开(公告)日：2009-01-01
申请号：US11771091
申请日：2007-06-29
IPC分类号： H01L23/52 , H01L21/4763
CPC分类号： H01L23/53295 , H01L21/7682 , H01L23/5222 , H01L2924/0002 , H01L2924/00
摘要： A method may comprise assembling a first dielectric ensemble that comprises a first dielectric layer exhibiting a first porosity, a second dielectric layer exhibiting a second porosity and a third dielectric layer exhibiting a third porosity, and fabricating a first metal line in the dielectric ensemble. A chemical may be applied on the third layer to pass through and dissolve a portion of the second layer. The third layer acts to prevent a via that is partially landed on the dielectric from exposing the air gap underneath.
摘要翻译： 一种方法可以包括组装第一介电体集合，其包括表现出第一孔隙率的第一电介质层，表现出第二孔隙率的第二电介质层和表现出第三孔隙率的第三电介质层，以及在电介质集合体中制造第一金属线。 化学品可以施加在第三层上以通过并溶解第二层的一部分。 第三层用于防止部分落在电介质上的通孔露出下方的气隙。
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10.发明授权Method of forming an air gap intermetal layer dielectric (ILD) by utilizing a dielectric material to bridge underlying metal lines 有权通过利用介电材料桥接下面的金属线形成气隙金属间电介质（ILD）的方法公开(公告)号：US06908829B2
公开(公告)日：2005-06-21
申请号：US10094875
申请日：2002-03-11
申请人： Makarem A. Hussein , Peter Moon , Jim Powers , Kevin P. O'Brien
发明人： Makarem A. Hussein , Peter Moon , Jim Powers , Kevin P. O'Brien
IPC分类号： H01L23/522 , H01L21/76 , H01L21/4763
CPC分类号： H01L21/7682 , H01L21/76807 , H01L23/5222 , H01L2924/0002 , H01L2924/00
摘要： A method of forming an air gap intermetal layer dielectric (ILD) to reduce capacitive coupling between electrical conductors in proximity. The method entails forming first and second electrical conductors over a substrate, wherein the electrical conductors are laterally spaced apart by a gap. Then, forming a gap bridging dielectric layer that extends over the first electrical conductor, the gap, and the second electrical conductor. In order to form a bridge from one electrical conductor to the other electrical conductor, the gap bridging dielectric materials should have poor gap filling characteristics. This can be attained by selecting and/or modifying a dielectric material to have a sufficiently high molecular weight and/or surface tension characteristic such that the material does not substantially sink into the gap. An example of such a material is a spin-on-polymer with a surfactant and/or other additives.
摘要翻译： 一种形成气隙金属间电介质（ILD）的方法，以减少接近的电导体之间的电容耦合。 该方法需要在衬底上形成第一和第二电导体，其中电导体横向间隔开间隙。 然后，形成在第一电导体，间隙和第二电导体上延伸的间隙桥接电介质层。 为了形成从一个电导体到另一个电导体的桥接，桥接介电材料的间隙应具有差的间隙填充特性。 这可以通过选择和/或改性电介质材料来实现，以具有足够高的分子量和/或表面张力特性，使得材料基本上不会沉入间隙。 这种材料的一个实例是具有表面活性剂和/或其它添加剂的旋涂聚合物。
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