摘要:
An apparatus is provided which includes a common signal node operable to conduct a first signal, a first circuit coupled to the common signal node to utilize the first signal and a signal-handling element coupled to the common signal node. The signal-handling element includes an isolating circuit coupled to the first conductor, a second conductor operable to conduct an output of the isolating circuit, and a signal-handling circuit coupled to the second conductor. The signal-handling circuit is operable to perform a signal-handling function in response to the output of the isolating circuit. By virtue of the isolating circuit, the signal-handling circuit and the first circuit are isolated from the second conductor and the signal-handling circuit. Preferably, the achieved isolation permits a communication signal included in the first signal to be conducted within a communication apparatus with less capacitance, and producing less return loss of that signal.
摘要:
A data receiver is provided which includes a front end interface circuit having an alternating current (AC) transmission receiving mode and a direct current (DC) transmission receiving mode. The front end interface circuit includes an offset compensation circuit operable to compensate a DC voltage offset between a pair of differential signals input to the data receiver. The front end interface circuit further includes an AC/DC selection unit operable to switch between (a) the DC transmission receiving mode, and (b) the AC transmission receiving mode, such that the data receiver is operable in (i) the DC transmission mode in which the offset compensation circuit is disabled, (ii) the DC transmission mode in which the offset compensation circuit is enabled, (iii) the AC transmission mode in which the offset compensation circuit is disabled, and (iv) the AC transmission receiving mode in which the offset compensation circuit is enabled.
摘要:
An improved signal detector system implementable in a high-speed SerDes receiver core that is able to detect valid signals from noise signals with a much tighter tolerance. The signal detector system improves upon the prior art designs by implementing modifications including: (1) the use of two peaking amplifiers for both (differential) input signals and reference to track and cancel gain variation; and, (2) the reduction of current mirroring stages to cut down current mapping error.
摘要:
A data receiver is provided which is operable to receive a signal controllably pre-distorted and transmitted by a transmitter, to generate information for adjusting the pre-distortion applied to the signal transmitted by the transmitter, and to transmit the information to the transmitter. The receiver is further operable to perform adaptive equalization to receive the signal transmitted by the transmitter.
摘要:
A data communication system includes a transmitter unit and a receiver unit. The transmission unit has a transmission characteristic that is adjustable in accordance with equalization information. The transmission unit is operable to transmit a predetermined signal and the receiver unit is operable to receive the predetermined signal. The receiver unit is further operable to generate the equalization information by examining the eye opening of the received signal, and to transmit the equalization information to the transmitter unit.
摘要:
Systems are provided for generating and distributing a plurality of reference currents on an integrated circuit. More particularly, an integrated circuit is provided which includes a reference current generating system. The reference current generating system includes a first reference current generator disposed at a first location of the integrated circuit which is operable to generate a plurality of first reference currents. A plurality of second reference current generators are disposed at a plurality of second locations of the integrated circuit. Each of the second reference current generators are operable to generate a second reference current from one of the plurality of first reference currents. In a particular example, the first location at which the first reference current generator is disposed is a central location and the second locations are disposed remote from the first location.
摘要:
A chip is provided in which an on-chip matching network has a first terminal conductively connected to a bond pad of the chip and a second terminal conductively connected to a common node on the chip. A wiring trace connects the on-chip matching network to a circuit of the chip. The on-chip matching network includes an electrostatic discharge protection (ESD) circuit having at least one diode having a first terminal conductively connected to the bond pad and a second terminal connected in an overvoltage discharge path to a source of fixed potential. The matching network further includes a first inductor coupled to provide a first inductive path between the bond pad and the wiring trace, a termination resistor having a first terminal connected to the common node, and a second inductor coupled to provide a second inductive path between the wiring trace and a second terminal of the termination resistor.
摘要:
A system for protecting a weak device operating in micro-electronic circuit that includes a high voltage power supply from high voltage overstressing prevents the weak device from failing during power-up, power-down, and when a low voltage power supply in a multiple power supply system is absent. The system includes a low voltage power supply detection circuit configured to detect circuit power-up, circuit power-down, and when the low voltage power supply is absent, and generate a control signal upon detection. The system further includes a controlled current mirror device configured to provide a trickle current to maintain a conduction channel in the weak device in response to the control signal received from the low voltage power supply detection circuit during circuit power-up, circuit power-down, and when the low voltage power supply is absent.
摘要:
Circuits and methods are provided for reducing the voltage stress applied to the drain to source conduction path of an FET and/or to reduce the stress to the gate oxide of an FET which may have a thin gate oxide. Thus, in a current mirror circuit disclosed herein, a first field effect transistor (FET) has a first gate and a first drain, in which the first drain is conductively connected to a current source for conducting a first current. The current mirror circuit also includes at least one second FET having a second gate conductively connected to the first gate, in which the second FET is operable to output a second current in fixed proportion to the first current. A switching element having a first conductive terminal is connected to the first gate and to the second gate, the second conductive terminal being connected to the first drain of the first FET. A switching network is operable to controllably switch the first and second FETs and the third switching element between a powered on state in which the first and second currents are conducted and the third switching element is conducting, and a powered off state in which the first and second currents are not conducted and the third switching element is nonconducting such that the same drain to source voltage stress is applied to both first and second FETs.
摘要:
A packaged semiconductor chip is provided which includes a semiconductor chip and a package element. The semiconductor chip includes a plurality of semiconductor devices and a plurality of conductive features disposed at an exterior face of the semiconductor chip. The package element has a plurality of external features conductively connected to the plurality of conductive features of the semiconductor chip. The semiconductor chip includes a monitored element including a conductive interconnect that conductively interconnects a first node of the semiconductor chip to a second node of the semiconductor chip. A detection circuit in the semiconductor chip is operable to compare a variable voltage drop across the monitored element with a reference voltage drop across a reference element on the chip at a plurality of different times during a lifetime of the packaged semiconductor chip so as to detect when the resistance of the monitored element is over threshold.