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    Semiconductor structure for monolithic switch matrix and method of manufacturing
    4.
    发明申请
    Semiconductor structure for monolithic switch matrix and method of manufacturing 审中-公开
    单片开关矩阵的半导体结构及其制造方法

    公开(公告)号：US20030020121A1

    公开(公告)日：2003-01-30

    申请号：US09911464

    申请日：2001-07-25

    申请人： MOTOROLA, INC.

    发明人： Stephen Kent Rockwell ,  John E. Holmes ,  Nestor Javier Escalera ,  Steven James Franson

    IPC分类号： H01L029/76 ,  H01L029/94 ,  H01L021/8249 ,  H01L021/8222

    CPC分类号： H01L27/0605 ,  H01L21/02381 ,  H01L21/02488 ,  H01L21/02505 ,  H01L21/02513 ,  H01L21/02521 ,  H01L21/8258

    摘要： A semiconductor structure for a high frequency monolithic switch matrix includes a monocrystalline silicon substrate, an amorphous oxide material overlying the monocrystalline silicon substrate, a monocrystalline perovskite oxide material overlying the amorphous oxide material, a monocrystalline compound semiconductor material overlying the monocrystalline perovskite oxide material, and a high frequency semiconductor integrated formed in and over the monocrystalline compound semiconductor material having one or more input ports and one or more output ports. The high frequency semiconductor integrated circuit also includes a high frequency switch circuit that is electrically coupled to a switch driver control circuit that is fabricated on the monocrystalline compound semiconductor material and which provides the DC signals required to control the high frequency circuit.

    摘要翻译： 用于高频单片开关矩阵的半导体结构包括单晶硅衬底，覆盖单晶硅衬底的无定形氧化物材料，覆盖在非晶氧化物材料上的单晶钙钛矿氧化物材料，覆盖单晶钙钛矿氧化物材料的单晶化合物半导体材料，以及 集成形成在具有一个或多个输入端口和一个或多个输出端口的单晶化合物半导体材料中和之上的高频半导体。 高频半导体集成电路还包括高频开关电路，其电耦合到制造在单晶化合物半导体材料上的开关驱动器控制电路，并提供控制高频电路所需的DC信号。

    Integrated radio frequency , optical, photonic, analog and digital functions in a semiconductor structure and method for fabricating semiconductor structure utilizing the formation of a compliant substrate for materials used to form the same
    6.
    发明申请
    Integrated radio frequency , optical, photonic, analog and digital functions in a semiconductor structure and method for fabricating semiconductor structure utilizing the formation of a compliant substrate for materials used to form the same 审中-公开
    在半导体结构中的集成射频，光学，光子，模拟和数字功能以及用于制造半导体结构的方法，其利用用于形成相同材料的材料形成柔性衬底

    公开(公告)号：US20030015707A1

    公开(公告)日：2003-01-23

    申请号：US09905869

    申请日：2001-07-17

    申请人： MOTOROLA, INC.

    发明人： Bruce Allen Bosco ,  Rudy M. Emrick ,  Steven James Franson ,  Nestor Javier Escalera ,  Bryan K. Farber

    IPC分类号： H01L029/04

    CPC分类号： H03F3/602 ,  H01L21/02381 ,  H01L21/02488 ,  H01L21/02505 ,  H01L21/02513 ,  H01L21/02521 ,  H01L21/8258 ,  H01L27/0605 ,  H03F3/087 ,  H03F2200/451

    摘要： High quality epitaxial layers of monocrystalline materials can be grown overlying monocrystalline substrates such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers. An accommodating buffer layer comprises a layer of monocrystalline oxide spaced apart from the silicon wafer by an amorphous interface layer of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. The accommodating buffer layer is lattice matched to both the underlying silicon wafer and the overlying monocrystalline material layer. Any lattice mismatch between the accommodating buffer layer and the underlying silicon substrate is taken care of by the amorphous interface layer. Radio frequency, optical, logic and other circuits in both silicon and compound semiconductor materials may be combined and interconnected in a single semiconductor structure.

    摘要翻译： 通过形成用于生长单晶层的柔性衬底，可以将单晶材料的高质量外延层生长在覆盖单晶衬底（例如大硅晶片）上。 容纳缓冲层包括通过硅氧化物的非晶界面层与硅晶片间隔开的单晶氧化物层。 非晶界面层消耗应变并允许高质量单晶氧化物容纳缓冲层的生长。 容纳缓冲层与下面的硅晶片和上覆的单晶材料层晶格匹配。 通过非晶界面层处理容纳缓冲层和底层硅衬底之间的任何晶格失配。 硅和化合物半导体材料中的射频，光学，逻辑和其他电路可以在单个半导体结构中组合和互连。