公开(公告)号：US09082621B2

公开(公告)日：2015-07-14

申请号：US13378493

申请日：2011-02-25

申请人： Taro Nishiguchi ,  Shin Harada ,  Makoto Sasaki

发明人： Taro Nishiguchi ,  Shin Harada ,  Makoto Sasaki

IPC分类号： H01L21/02 ,  H01L21/20 ,  H01L21/205 ,  C30B23/02 ,  C30B23/06 ,  C30B29/36 ,  C30B33/06

CPC分类号： H01L21/02631 ,  C30B23/025 ,  C30B23/063 ,  C30B23/066 ,  C30B29/36 ,  C30B33/06 ,  H01L21/02378 ,  H01L21/02447 ,  H01L21/02529 ,  H01L21/02658

摘要： Each of first and second material substrates made of single crystal silicon carbide has first and second back surfaces, first and second side surfaces, and first and second front surfaces. The first and second back surfaces are connected to a supporting portion. The first and second side surfaces face each other with a gap interposed therebetween, the gap having an opening between the first and second front surfaces. A closing portion for closing the gap over the opening is formed. A connecting portion for closing the opening is formed by depositing a sublimate from the first and second side surfaces onto the closing portion. The closing portion is removed. A silicon carbide single crystal is grown on the first and second front surfaces.

摘要翻译： 由单晶碳化硅制成的第一和第二材料基板中的每一个具有第一和第二后表面，第一和第二侧表面以及第一和第二前表面。 第一和第二后表面连接到支撑部分。 第一和第二侧表面彼此间隔开，间隙在第一和第二前表面之间具有开口。 形成用于封闭开口上的间隙的闭合部分。 用于关闭开口的连接部分通过从第一和第二侧表面沉积到闭合部分上而形成。 关闭部分被去除。 在第一和第二前表面上生长碳化硅单晶。

公开(公告)号：US08709950B2

公开(公告)日：2014-04-29

申请号：US13310203

申请日：2011-12-02

申请人： Makoto Sasaki ,  Shin Harada

发明人： Makoto Sasaki ,  Shin Harada

IPC分类号： H01L21/00

CPC分类号： H01L21/02658 ,  H01L21/02052 ,  H01L21/02378 ,  H01L21/02529 ,  H01L29/1608

摘要： An SiC substrate includes the steps of preparing a base substrate having a main surface and made of SiC, washing the main surface using a first alkaline solution, and washing the main surface using a second alkaline solution after the step of washing with the first alkaline solution. The SiC substrate has the main surface, and an average of residues on the main surface are equal to or larger than 0.2 and smaller than 200 in number.

摘要翻译： SiC基板包括准备具有主表面并由SiC制成的基底基板的步骤，使用第一碱性溶液洗涤主表面，并且在用第一碱性溶液洗涤步骤之后用第二碱性溶液洗涤主表面 。 SiC衬底具有主表面，主表面上的残留物的平均值等于或大于0.2且小于200。

公开(公告)号：US08435866B2

公开(公告)日：2013-05-07

申请号：US13256991

申请日：2010-09-28

申请人： Taro Nishiguchi ,  Makoto Sasaki ,  Shin Harada ,  Kyoko Okita ,  Hiroki Inoue ,  Shinsuke Fujiwara ,  Yasuo Namikawa

发明人： Taro Nishiguchi ,  Makoto Sasaki ,  Shin Harada ,  Kyoko Okita ,  Hiroki Inoue ,  Shinsuke Fujiwara ,  Yasuo Namikawa

IPC分类号： H01L21/306 ,  H01L21/304

CPC分类号： C30B29/36 ,  C30B33/06

摘要： At least one single crystal substrate, each having a backside surface and made of silicon carbide, and a supporting portion having a main surface and made of silicon carbide, are prepared. In this preparing step, at least one of the backside surface and main surface is formed by machining. By this forming step, a surface layer having distortion in the crystal structure is formed on at least one of the backside surface and main surface. The surface layer is removed at least partially. Following this removing step, the backside surface and main surface are connected to each other.

摘要翻译： 制备至少一个具有背面并由碳化硅制成的单晶基板和具有主表面并由碳化硅制成的支撑部分。 在该制备步骤中，通过机械加工形成背面和主表面中的至少一个。 通过该形成步骤，在背面和主面中的至少一个上形成有晶体结构变形的表层。 表面层至少部分去除。 在该去除步骤之后，背面和主表面彼此连接。

公开(公告)号：US20120184113A1

公开(公告)日：2012-07-19

申请号：US13395793

申请日：2011-01-07

申请人： Hiroki Inoue ,  Shin Harada ,  Makoto Sasaki ,  Taro Nishiguchi ,  Kyoko Okita ,  Yasuo Namikawa

发明人： Hiroki Inoue ,  Shin Harada ,  Makoto Sasaki ,  Taro Nishiguchi ,  Kyoko Okita ,  Yasuo Namikawa

IPC分类号： H01L21/30 ,  H05B3/02

CPC分类号： H01L29/7802 ,  H01L21/02378 ,  H01L21/02529 ,  H01L21/02667 ,  H01L21/7602 ,  H01L29/1608 ,  H01L29/66068

摘要： A step of preparing a stack is performed to position each single-crystal substrate in a first single-crystal substrate group and a first base substrate face to face with each other, position each single-crystal substrate in a second single-crystal substrate group and a second base substrate face to face with each other, and stack the first single-crystal substrate group, the first base substrate, an insertion portion, the second single-crystal substrate group, and the second base substrate in one direction in this order. Next, the stack is heated so as to allow a temperature of the stack to reach a temperature at which silicon carbide can sublime and so as to form a temperature gradient in the stack with the temperature thereof getting increased in the above-described direction. In this way, silicon carbide substrates can be manufactured efficiently.

摘要翻译： 执行制备叠层的步骤，将第一单晶衬底组和第一衬底中的每个单晶衬底彼此面对，将每个单晶衬底放置在第二单晶衬底组中， 第二基板彼此面对，并且在一个方向上依次堆叠第一单晶基板组，第一基板，插入部，第二单晶基板组和第二基板。 接下来，对叠层进行加热，以使堆叠的温度达到碳化硅可以升华的温度，并且在上述方向上随着温度升高而在叠层中形成温度梯度。 以这种方式，可以有效地制造碳化硅衬底。

公开(公告)号：US20120161158A1

公开(公告)日：2012-06-28

申请号：US13394640

申请日：2011-06-17

申请人： Tsutomu Hori ,  Shin Harada ,  Hiroki Inoue ,  Makoto Sasaki ,  Satomi Itoh ,  Kyoko Okita ,  Yasuo Namikawa

发明人： Tsutomu Hori ,  Shin Harada ,  Hiroki Inoue ,  Makoto Sasaki ,  Satomi Itoh ,  Kyoko Okita ,  Yasuo Namikawa

IPC分类号： H01L29/161

CPC分类号： H01L29/7802 ,  H01L21/02378 ,  H01L21/0243 ,  H01L21/02433 ,  H01L21/02529 ,  H01L21/02631 ,  H01L21/0475 ,  H01L29/045 ,  H01L29/1608 ,  H01L29/66068

摘要： A first silicon carbide substrate has a first backside surface connected to a supporting portion, a first front-side surface opposite to the first backside surface, and a first side surface connecting the first backside surface and the first front-side surface to each other. A second silicon carbide substrate has a second backside surface connected to the supporting portion, a second front-side surface opposite to the second backside surface, and a second side surface connecting the second backside surface and the second front-side surface to each other and forming a gap between the first side surface and the second side surface. A closing portion closes the gap. Thereby, foreign matters can be prevented from remaining in a gap between a plurality of silicon carbide substrates provided in a combined substrate.

摘要翻译： 第一碳化硅衬底具有连接到支撑部分的第一背面，与第一背面相对的第一前侧表面和将第一背面和第一前侧表面相互连接的第一侧表面。 第二碳化硅衬底具有连接到支撑部分的第二背面，与第二背面相对的第二前侧表面，以及将第二背面和第二前侧表面彼此连接的第二侧表面， 在第一侧表面和第二侧表面之间形成间隙。 闭合部分闭合间隙。 由此，可以防止异物残留在组合基板中设置的多个碳化硅基板之间的间隙中。

公开(公告)号：USD651991S1

公开(公告)日：2012-01-10

申请号：US29379460

申请日：2010-11-19

申请人： Taro Nishiguchi ,  Makoto Sasaki ,  Shin Harada ,  Shinsuke Fujiwara ,  Yasuo Namikawa

设计人： Taro Nishiguchi ,  Makoto Sasaki ,  Shin Harada ,  Shinsuke Fujiwara ,  Yasuo Namikawa

公开(公告)号：US20110233561A1

公开(公告)日：2011-09-29

申请号：US13073385

申请日：2011-03-28

申请人： Taro NISHIGUCHI ,  Makoto Sasaki ,  Shin Harada ,  Kyoko Okita ,  Hiroki Inoue ,  Yasuo Namikawa

发明人： Taro NISHIGUCHI ,  Makoto Sasaki ,  Shin Harada ,  Kyoko Okita ,  Hiroki Inoue ,  Yasuo Namikawa

IPC分类号： H01L29/161

CPC分类号： H01L29/7802 ,  H01L21/0445 ,  H01L21/0475 ,  H01L21/2007 ,  H01L29/045 ,  H01L29/0878 ,  H01L29/1608 ,  H01L29/417 ,  H01L29/6606 ,  H01L29/66068

摘要： A supporting portion is made of silicon carbide. At least one layer has first and second surfaces. The first surface is supported by the supporting portion. The at least one layer has first and second regions. The first region is made of silicon carbide of a single-crystal structure. The second region is made of graphite. The second surface has a surface formed by the first region. The first surface has a surface formed by the first region, and a surface formed by the second region. In this way, a semiconductor substrate can be provided which has a region made of silicon carbide having a single-crystal structure and a supporting portion made of silicon carbide and allows for reduced electric resistance of an interface therebetween.

摘要翻译： 支撑部分由碳化硅制成。 至少一层具有第一和第二表面。 第一表面由支撑部分支撑。 所述至少一层具有第一和第二区域。 第一区域由单晶结构的碳化硅制成。 第二区域由石墨制成。 第二表面具有由第一区域形成的表面。 第一表面具有由第一区域形成的表面和由第二区域形成的表面。 以这种方式，可以提供具有由具有单晶结构的碳化硅制成的区域和由碳化硅制成的支撑部分的区域并且允许其之间的界面的电阻降低的半导体衬底。

公开(公告)号：US20110226182A1

公开(公告)日：2011-09-22

申请号：US13049069

申请日：2011-03-16

申请人： Makoto Sasaki ,  Shin Harada ,  Taro Nishiguchi

发明人： Makoto Sasaki ,  Shin Harada ,  Taro Nishiguchi

IPC分类号： C30B23/02

CPC分类号： C30B35/002 ,  C30B23/00 ,  C30B29/36

摘要： A crucible includes a body portion having a hollow inner portion, and a projection portion connected to an inner circumferential surface of the body portion and projecting toward the inner portion. The projection portion has a side surface provided with a thread. A holder includes a base and a protrusion connected to an end portion of the base. The protrusion has an inner circumferential side provided with a thread. A crystal production device includes the crucible and the holder. The holder is attached to the projection portion of the crucible by means of the threads formed in the holder and the crucible.

摘要翻译： 坩埚包括具有中空内部的主体部分和连接到主体部分的内周表面并朝向内部部分突出的突出部分。 突出部具有设有螺纹的侧面。 保持器包括基部和连接到基部的端部的突起。 突出部具有设置有螺纹的内周侧。 晶体生产装置包括坩埚和保持器。 保持器借助于形成在保持器和坩埚中的螺纹附接到坩埚的突出部分。

公开(公告)号：US09947782B2

公开(公告)日：2018-04-17

申请号：US13634860

申请日：2010-12-20

申请人： Shin Harada ,  Makoto Sasaki ,  Taro Nishiguchi ,  Kyoko Okita ,  Keiji Wada ,  Tomihito Miyazaki

发明人： Shin Harada ,  Makoto Sasaki ,  Taro Nishiguchi ,  Kyoko Okita ,  Keiji Wada ,  Tomihito Miyazaki

IPC分类号： H01L29/78 ,  H01L21/02 ,  H01L21/20 ,  H01L29/04 ,  H01L29/66 ,  H01L29/739 ,  H01L29/16

CPC分类号： H01L29/7802 ,  H01L21/02002 ,  H01L21/02008 ,  H01L21/2007 ,  H01L29/045 ,  H01L29/1608 ,  H01L29/66068 ,  H01L29/66333 ,  H01L29/7395

摘要： A semiconductor device has a semiconductor layer and a substrate. The semiconductor layer constitutes at least a part of a current path, and is made of silicon carbide. The substrate has a first surface supporting the semiconductor layer, and a second surface opposite to the first surface. Further, the substrate is made of silicon carbide having a 4H type single-crystal structure. Further, the substrate has a physical property in which a ratio of a peak strength in a wavelength of around 500 nm to a peak strength in a wavelength of around 390 nm is 0.1 or smaller in photoluminescence measurement. In this way, the semiconductor device is obtained to have a low on-resistance.

公开(公告)号：US20120273800A1

公开(公告)日：2012-11-01

申请号：US13395494

申请日：2011-06-17

申请人： Tsutomu Hori ,  Shin Harada ,  Hiroki Inoue ,  Makoto Sasaki ,  Satomi Itoh ,  Yasuo Namikawa

发明人： Tsutomu Hori ,  Shin Harada ,  Hiroki Inoue ,  Makoto Sasaki ,  Satomi Itoh ,  Yasuo Namikawa

IPC分类号： H01L29/24

CPC分类号： H01L29/7802 ,  H01L21/02002 ,  H01L21/02529 ,  H01L21/02609 ,  H01L21/02667 ,  H01L29/045 ,  H01L29/1608 ,  H01L29/66068

摘要： A first vertex of a first single-crystal silicon carbide substrate and a second vertex of a second single-crystal silicon carbide substrate abut each other such that a first side of the first single-crystal silicon carbide substrate and a second side of the second single-crystal silicon carbide substrate are aligned. In addition, at least a part of the first side and at least a part of the second side abut on a third side of a third single-crystal silicon carbide substrate. Thus, in manufacturing a semiconductor device including a composite substrate, process fluctuations caused by a gap between the single-crystal silicon carbide substrates can be suppressed.

摘要翻译： 第一单晶碳化硅衬底的第一顶点和第二单晶碳化硅衬底的第二顶点彼此邻接，使得第一单晶碳化硅衬底的第一侧和第二单晶碳化硅衬底的第二侧 - 晶体碳化硅衬底被对准。 此外，第一侧的至少一部分和第二侧的至少一部分与第三单晶碳化硅基板的第三面邻接。 因此，在制造包括复合衬底的半导体器件时，可以抑制由单晶碳化硅衬底之间的间隙引起的工艺波动。