Abstract:
A method for operating a target processing system for processing a target (23) on a chuck (13), the method comprising providing at least a first chuck position mark (27) and a second chuck position mark (28) on the chuck (13); providing an alignment sensing system (17) arranged for detecting the first and second chuck position marks (27, 28), the alignment sensing system (17) comprising at least a first alignment sensor (61) and a second alignment sensor (62); moving the chuck (13) to a first position based on at least one measurement of the alignment sensing system (17); and measuring at least one value related to the first position of the chuck.
Abstract:
The invention relates to a multi-axis differential interferometer (1) for measuring a displacement and/or rotation between a first reflective surface (21, 321) and a second reflective surface (81, 381), wherein said measuring is carried out using at least two pairs of beams, wherein each pair is formed by a measurement beam (Mb) to be emitted onto a first one (21, 321) of said reflective surfaces, and a reference beam (Rb) to be emitted onto another one (81, 381) of said reflective surfaces, said interferometer (1) comprising: a first optical module (20) and a second optical module (40), wherein each optical module (20, 40) is configured for receiving a respective coherent beam and for creating one of said pairs therefrom. The invention further relates to a lithography system comprising such an interferometer and to a method for assembling such a multi-axis differential interferometer.
Abstract:
The invention relates to a differential interferometer module adapted for measuring a direction of displacement between a reference mirror and a measurement mirror. In an embodiment the differential interferometer module is adapted for emitting three reference beams towards a first mirror and three measurement beams towards a second mirror for determining a displacement between said first and second mirror. In a preferred embodiment the same module is adapted for measuring a relative rotation around two perpendicular axes as well. The present invention further relates to a lithography system comprising such a interferometer module and a method for measuring such a displacement and rotations.
Abstract:
A multi-beamlet charged particle beamlet lithography system for transferring a pattern to a surface of a substrate. The system comprises a projection system (311) for projecting a plurality of charged particle beamlets (7) onto the surface of the substrate; a chuck (313) moveable with respect to the projection system; a beamlet measurement sensor (i.a. 505, 511) for determining one or more characteristics of one or more of the charged particle beamlets, the beamlet measurement sensor having a surface (501) for receiving one or more of the charged particle beamlets; and a position mark measurement system for measuring a position of a position mark (610, 620, 635), the position mark measurement system comprising an alignment sensor (361, 362). The chuck comprises a substrate support portion for supporting the substrate, a beamlet measurement sensor portion (460) for accommodating the surface of the beamlet measurement sensor, and a position mark portion (470) for accommodating the position mark.
Abstract:
A multi-beamlet charged particle beamlet lithography system for transferring a pattern to a surface of a substrate. The system comprises a projection system (311) for projecting a plurality of charged particle beamlets (7) onto the surface of the substrate; a chuck (313) moveable with respect to the projection system; a beamlet measurement sensor (i.a. 505, 511) for determining one or more characteristics of one or more of the charged particle beamlets, the beamlet measurement sensor having a surface (501) for receiving one or more of the charged particle beamlets; and a position mark measurement system for measuring a position of a position mark (610, 620, 635), the position mark measurement system comprising an alignment sensor (361, 362). The chuck comprises a substrate support portion for supporting the substrate, a beamlet measurement sensor portion (460) for accommodating the surface of the beamlet measurement sensor, and a position mark portion (470) for accommodating the position mark.
Abstract:
The invention relates to a lithography system. The lithography system has a projection lens system and a capacitive sensing system. The projection lens system is provided with a final projection lens. The capacitive sensing system is arranged for making a measurement related to a distance between the final projection lens and a target. The capacitive sensing system includes at least one capacitive sensor. Additional, the capacitive sensing system is provided with a flexible printed circuit structure and at least one integrated flex print connector. The at least one sensor is located in the flexible printed circuit structure. The flexible printed circuit structure has a flexible base provided with conductive electrodes for the at least one sensor and conductive tracks. The conductive tracks extend from the electrodes along the at least one integrated flex print connector.
Abstract:
The invention relates to a lithography system comprising an optical column, a moveable target carrier for displacing a target such as a wafer, and a differential interferometer module, wherein the interferometer module is adapted for emitting three reference beams towards a first mirror and three measurement beams towards a second mirror for determining a displacement between said first and second mirror. In a preferred embodiment the same module is adapted for measuring a relative rotation around two perpendicular axes as well. The present invention further relates to an interferometer module and method for measuring such a displacement and rotations.
Abstract:
A method for operating a target processing system for processing a target (23) on a chuck (13), the method comprising providing at least a first chuck position mark (27) and a second chuck position mark (28) on the chuck (13); providing an alignment sensing system (17) arranged for detecting the first and second chuck position marks (27, 28), the alignment sensing system (17) comprising at least a first alignment sensor (61) and a second alignment sensor (62); moving the chuck (13) to a first position based on at least one measurement of the alignment sensing system (17); and measuring at least one value related to the first position of the chuck.
Abstract:
The invention relates to a multi-axis differential interferometer (1) for measuring a displacement and/or rotation between a first reflective surface (21, 321) and a second reflective surface (81, 381), wherein said measuring is carried out using at least two pairs of beams, wherein each pair is formed by a measurement beam (Mb) to be emitted onto a first one (21, 321) of said reflective surfaces, and a reference beam (Rb) to be emitted onto another one (81, 381) of said reflective surfaces, said interferometer (1) comprising: a first optical module (20) and a second optical module (40), wherein each optical module (20, 40) is configured for receiving a respective coherent beam and for creating one of said pairs therefrom. The invention further relates to a lithography system comprising such an interferometer and to a method for assembling such a multi-axis differential interferometer.
Abstract:
The invention relates to a substrate comprising an optical position mark for being read-out by an optical recording head for emitting light of predetermined wavelength, preferably red or infra-red light, more in particular of 635 nm light, the optical position mark having a mark height, a mark length and a predetermined known position on the substrate, the optical position mark extending along a longitudinal direction and being arranged for varying a reflection coefficient of the position mark along said longitudinal direction, wherein the optical position mark comprises: a first region having a first reflection coefficient and a first width; a second region neighboring the first region and forming a first region pair, the second region having a second reflection coefficient and a second width, and the second reflection coefficient being different from the first reflection coefficient, wherein the first region comprises sub-wavelength structures in comparison with a wavelength of the predetermined wavelength light.