Electron beam exposure system
    2.
    发明授权
    Electron beam exposure system 有权
    电子束曝光系统

    公开(公告)号:US06897458B2

    公开(公告)日:2005-05-24

    申请号:US10699246

    申请日:2003-10-30

    摘要: The invention relates to an electron beam exposure apparatus for transferring a pattern onto the surface of a target, comprising: a beamlet generator for generating a plurality of electron beamlets; a modulation array for receiving said plurality of electron beamlets, comprising a plurality of modulators for modulating the intensity of an electron beamlet; a controller, connected to the modulation array for individually controlling the modulators, an adjustor, operationally connected to each modulator, for individually adjusting the control signal of each modulator; a focusing electron optimal system comprising an array of electrostatic lenses wherein each lens focuses a corresponding individual beamlet, which is transmitted by said modulation array, to a cross section smaller than 300 nm, and a target holder for holding a target with its exposure surface onto which the pattern is to be transferred in the first focal plane of the focusing electron optical system.

    摘要翻译: 本发明涉及一种用于将图案转印到目标表面上的电子束曝光装置,包括:用于产生多个电子束的小波发生器; 用于接收所述多个电子子束的调制阵列,包括用于调制电子束的强度的多个调制器; 连接到用于单独控制调制器的调制阵列的控制器,可操作地连接到每个调制器的调节器,用于单独调整每个调制器的控制信号; 聚焦电子最优系统,其包括静电透镜阵列,其中每个透镜将由所述调制阵列传输的相应单独的子束聚焦到小于300nm的横截面,以及用于将其曝光表面保持在其上的目标保持器 其图案将在聚焦电子光学系统的第一焦平面中转印。

    Projection lens arrangement
    5.
    发明授权
    Projection lens arrangement 有权
    投影镜头布置

    公开(公告)号:US09105439B2

    公开(公告)日:2015-08-11

    申请号:US13304427

    申请日:2011-11-25

    摘要: The invention relates to a charged particle optical system comprising a beamlet generator for generating a plurality of charged particle beamlets, an electrostatic deflection system for deflecting the beamlets, and a projection lens system for directing the beamlets from the beamlet generator towards the target. The electrostatic deflection system comprises a first electrostatic deflector and a second electrostatic deflector for scanning charged particle beamlets over the target. The second electrostatic deflector is located behind the first electrostatic deflector so that, during operation of the system, a beamlet generated by the beamlet generator passes both of the electrostatic deflectors. During operation of the first and second electrostatic deflectors the system is adapted to apply voltages on the first electrostatic deflector and the second electrostatic deflector of opposite sign.

    摘要翻译: 本发明涉及一种带电粒子光学系统,其包括用于产生多个带电粒子子束的子束发生器,用于偏转子束的静电偏转系统,以及用于将子束从小波发生器引导到目标的投影透镜系统。 静电偏转系统包括用于在靶上扫描带电粒子束的第一静电偏转器和第二静电偏转器。 第二静电偏转器位于第一静电偏转器的后面,使得在系统操作期间,由小梁发生器产生的子束通过两个静电偏转器。 在第一和第二静电偏转器的操作期间,系统适于在第一静电偏转器和相反符号的第二静电偏转器上施加电压。

    Electron beam exposure system
    7.
    再颁专利
    Electron beam exposure system 有权
    电子束曝光系统

    公开(公告)号:USRE44240E1

    公开(公告)日:2013-05-28

    申请号:US12189817

    申请日:2008-08-12

    IPC分类号: H01J37/30 H01J37/304

    摘要: The invention relates to an electron beam exposure apparatus for transferring a pattern onto the surface of a target, comprising: a beamlet generator for generating a plurality of electron beamlets; a modulation array for receiving said plurality of electron beamlets, comprising a plurality of modulators for modulating the intensity of an electron beamlet; a controller, connected to the modulation array for individually controlling the modulators, an adjustor, operationally connected to each modulator, for individually adjusting the control signal of each modulator; a focusing electron optical system comprising an array of electrostatic lenses wherein each lens focuses a corresponding individual beamlet, which is transmitted by said modulation array, to a cross section smaller than 300 nm, and a target holder for holding a target with its exposure surface onto which the pattern is to be transferred in the first focal plane of the focusing electron optical system.

    摘要翻译: 本发明涉及一种用于将图案转印到目标表面上的电子束曝光装置,包括:用于产生多个电子束的小波发生器; 用于接收所述多个电子子束的调制阵列,包括用于调制电子束的强度的多个调制器; 连接到用于单独控制调制器的调制阵列的控制器,可操作地连接到每个调制器的调节器,用于单独调整每个调制器的控制信号; 一种聚焦电子光学系统,包括静电透镜阵列,其中每个透镜将由所述调制阵列传输的相应单独的子束聚焦成小于300nm的横截面,以及用于将其曝光表面保持在其上的靶保持器 其图案将在聚焦电子光学系统的第一焦平面中转印。

    Electron beam exposure system
    8.
    再颁专利
    Electron beam exposure system 有权
    电子束曝光系统

    公开(公告)号:USRE44908E1

    公开(公告)日:2014-05-27

    申请号:US13343036

    申请日:2012-01-04

    摘要: The invention relates to an electron beam exposure apparatus for transferring a pattern onto the surface of a target, comprising: a beamlet generator for generating a plurality of electron beamlets; a modulation array for receiving said plurality of electron beamlets, comprising a plurality of modulators for modulating the intensity of an electron beamlet; a controller, connected to the modulation array for individually controlling the modulators, an adjustor, operationally connected to each modulator, for individually adjusting the control signal of each modulator; a focusing electron optical system comprising an array of electrostatic lenses wherein each lens focuses a corresponding individual beamlet, which is transmitted by said modulation array, to a cross section smaller than 300 nm, and a target holder for holding a target with its exposure surface onto which the pattern is to be transferred in the first focal plane of the focusing electron optical system.

    摘要翻译: 本发明涉及一种用于将图案转印到目标表面上的电子束曝光装置,包括:用于产生多个电子束的小波发生器; 用于接收所述多个电子子束的调制阵列,包括用于调制电子束的强度的多个调制器; 连接到用于单独控制调制器的调制阵列的控制器,可操作地连接到每个调制器的调节器,用于单独调整每个调制器的控制信号; 一种聚焦电子光学系统,包括静电透镜阵列,其中每个透镜将由所述调制阵列传输的相应单独的子束聚焦成小于300nm的横截面,以及用于将其曝光表面保持在其上的靶保持器 其图案将在聚焦电子光学系统的第一焦平面中转印。

    LITHOGRAPHY SYSTEM
    9.
    发明申请
    LITHOGRAPHY SYSTEM 有权
    LITHOGRAPHY系统

    公开(公告)号:US20100045958A1

    公开(公告)日:2010-02-25

    申请号:US12611847

    申请日:2009-11-03

    IPC分类号: G03B27/72

    摘要: A maskless lithography system for transferring a pattern onto the surface of a target. At least one beam generator for generating a plurality of beamlets. A plurality of modulators modulate the magnitude of a beamlet, and a control unit controls of the modulators. The control unit generates and delivers pattern data to the modulators for controlling the magnitude of each individual beamlet. The control unit includes at least one data storage for storing the pattern data, at least one readout unit for reading out the data from the data storage, at least one data converter for converting the data that is read out from the data storage into at least one modulated light beam, and at least one optical transmitter for transmitting the at least one modulated light beam to the modulation modulators.

    摘要翻译: 一种用于将图案转印到目标表面上的无掩模光刻系统。 用于产生多个子束的至少一个光束发生器。 多个调制器调制小波束的幅度,并且控制单元控制调制器。 控制单元生成并将模式数据传送到调制器,以控制每个单独子束的幅度。 控制单元包括用于存储图案数据的至少一个数据存储器,用于从数据存储器读出数据的至少一个读出单元,至少一个数据转换器,用于将从数据存储器读出的数据转换为至少 一个调制光束,以及至少一个光发射器,用于将至少一个调制光束传输到调制调制器。

    Lithography system
    10.
    发明授权
    Lithography system 有权
    光刻系统

    公开(公告)号:US07612866B2

    公开(公告)日:2009-11-03

    申请号:US11982119

    申请日:2007-11-01

    IPC分类号: G03B27/54

    摘要: A maskless lithography system for transferring a pattern onto the surface of a target. At least one beam generator for generating a plurality of beamlets. A plurality of modulators modulate the magnitude of a beamlet, and a control unit controls of the modulators. The control unit generates and delivers pattern data to the modulators for controlling the magnitude of each individual beamlet. The control unit includes at least one data storage for storing the pattern data, at least one readout unit for reading out the data from the data storage, at least one data converter for converting the data that is read out from the data storage into at least one modulated light beam, and at least one optical transmitter for transmitting the at least one modulated light beam to the modulation modulators.

    摘要翻译: 一种用于将图案转印到目标表面上的无掩模光刻系统。 用于产生多个子束的至少一个光束发生器。 多个调制器调制小波束的幅度,并且控制单元控制调制器。 控制单元生成并将模式数据传送到调制器,以控制每个单独子束的幅度。 控制单元包括用于存储图案数据的至少一个数据存储器,用于从数据存储器读出数据的至少一个读出单元,至少一个数据转换器,用于将从数据存储器读出的数据转换为至少 一个调制光束和至少一个用于将至少一个调制光束发射到调制调制器的光发射器。