摘要:
A method and an apparatus for providing an optical clock distribution network. In one embodiment, an optical source is configured to emit optical pulses at a desired clock frequency. The optical pulses are separated into a plurality of split optical pulses, each of which is received by a clock receiver node in a semiconductor die. In one embodiment, each clock receiver node locally generates a photocurrent in response to the split optical beams. Each of the photocurrents is locally converted into voltage and thus into local clock signals, which are used to clock the local area of the integrated circuit. In one embodiment, the semiconductor die includes an additional clock receiver node used to clock a clock generation circuit included in the semiconductor die. The clock generation circuit generates clock signals that are in phase with each other and the other clock signals generated throughout the semiconductor die. In one embodiment, the clock signals generated by the clock generation circuit are used to clock and phase lock input/output communications on the semiconductor die as well as off chip input/output communications between the semiconductor die and other external semiconductor dice of the system.
摘要:
An optical modulator that modulates light through the semiconductor substrate through the back side of a flip chip packaged integrated circuit. The optical modulator of the present invention enables integrated circuit signals to be extracted through the back side of the semiconductor substrate. In one embodiment, an optical modulator is disposed within a flip chip packaged integrated circuit die. The optical modulator includes a deflector and a diffraction grating. An infrared light beam is directed through the back side of a silicon substrate of the integrated circuit die, deflected off the deflector through the diffraction grating and back out the back side of the integrated circuit die. The diffraction grating modulates the phase of a portion of the deflected light beam in response to an integrated circuit signal. A resulting diffraction interference occurs between the phase modulated portions and non-phase modulated portions of the deflected light beam. The interference causes amplitude modulation of a zero order diffraction of the deflected light beam, from which the integrated circuit signal can be extracted.
摘要:
A method and an apparatus for detecting an electric field in the active regions of an integrated circuit disposed in a semiconductor. In one embodiment, a laser beam is operated at a wavelength greater than approximately 0.9 .mu.m. The laser beam is focused onto a P-N junction, such as for example the drain of a MOS transistor, through the back side of the semiconductor substrate. As a result of free carrier absorption, the laser beam is partially absorbed near the P-N junction. When a signal is impressed on the P-N junction, the degree of free carrier absorption will be modulated in accordance with the modulation of the depletion region near the P-N junction. The laser beam passes through the P-N junction region, reflects off the oxide interface and metal behind the junction, and returns back through the P-N junction and back out of the silicon surface. Amplitude modulation in this reflected laser beam is detected with an optical detection system.
摘要:
A method and an apparatus providing optical input/output in an integrated circuit. In one embodiment, optical modulators and demodulators, which are coupled to integrated circuit input/output nodes, are disposed on or within the back side semiconductor substrate of a flip chip packaged integrated circuit. Since a flip chip packaged integrated circuit die is utilized, full access to the optical modulators and demodulators is provided from the back side of the integrated circuit die for optical input/output. In one embodiment, a heat sink including a light source and an optical assembly is thermally and optically coupled to the back side of the integrated circuit die. A light beam is directed to the optical modulators and the deflected modulated light beam is routed and directed to the optical demodulators to realize optical input/output. In one embodiment, infrared light may be utilized such that the optical modulators and demodulators are disposed within a silicon semiconductor substrate. Since silicon is partially transparent to infrared light, optical input/output is realized through the back side and through the semiconductor substrate of the flip chip packaged integrated circuit die.
摘要:
A method and an apparatus providing an optical interconnection in an integrated circuit die. In one embodiment, an optical interconnection is used to optically interconnect a waveguide-based optical modulator through the insulating layer and back side of the semiconductor substrate of the integrated circuit die. In one embodiment, an insulating oxide layer is disposed between a semiconductor waveguide optical modulator and the back side of the semiconductor substrate. Optical conduits are disposed in the insulating oxide layer at the locations where light enters and exits the semiconductor waveguide optical modulator. In one embodiment, the optical conduits have indexes of refraction substantially equal to the indexes of refraction of the semiconductor substrate and the semiconductor waveguide optical modulator. Thus, attenuation of the light used to optically couple the semiconductor waveguide optical modulator through the back side of the semiconductor substrate is reduced.
摘要:
Embodiments of a method comprising guiding an optical mode with an optical waveguide disposed in silicon, overlapping both the optical waveguide and an active semiconductor material evanescently coupled to the optical waveguide with the optical mode guided through the optical waveguide, electrically pumping the active semiconductor material to inject current directed through the active semiconductor material and through the optical mode, and generating light in the active semiconductor material in response to the injected current. Other embodiments are disclosed and claimed.
摘要:
An apparatus and method electrically pumping a hybrid evanescent laser. For one example, an apparatus includes an optical waveguide disposed in silicon. An active semiconductor material is disposed over the optical waveguide defining an evanescent coupling interface between the optical waveguide and the active semiconductor material such that an optical mode to be guided by the optical waveguide overlaps both the optical waveguide and the active semiconductor material. A current injection path is defined through the active semiconductor material and at least partially overlapping the optical mode such that light is generated in response to electrical pumping of the active semiconductor material in response to current injection along the current injection path at least partially overlapping the optical mode.
摘要:
An apparatus and method for modulating a phase of optical beam independent of polarization. In one embodiment, an apparatus according to embodiments of the present invention includes a first region of an optical waveguide disposed in semiconductor material, the first region having a first conductivity type, and a second region of the optical waveguide disposed in the semiconductor material, the second region having a second conductivity type opposite to the first conductivity type. The apparatus also includes a substantially V shaped insulating region disposed between the first and second regions of the optical waveguide, wherein a vertex of the substantially V shaped insulating region forms an intersecting line that is substantially parallel to an optical path of an optical beam to be directed through the optical waveguide.
摘要:
An optical interleaving switching method and apparatus. In one aspect of the present invention, the disclosed apparatus includes first and second multi-mode interference (MMI) coupling devices disposed in a semiconductor substrate. Each of the first and second MMI coupling devices include first and second inputs and first and second outputs. A first optical coupler having a first optical path length is included. The first output of the first MMI coupling device is optically coupled to the first input of the second MMI coupling device through the first optical coupler. A second optical coupler having a second optical path length is also included. The second output of the first MMI coupling device is optically coupled to the second input of the second MMI coupling device through the second optical coupler. The first optical path length of the first optical coupler is different than the second optical path length of the second optical coupler. In another aspect of the invention, a 2×2 optical switch is optically coupled to the inputs and/or outputs of the first and/or second MMI coupling devices providing multiplexing/demultiplexing and switching functionality for multi-channel optical input and/or output beams.
摘要:
An optical transmit module. In one aspect of the present invention, an optical beam is generated with a gain medium disposed in a semiconductor substrate. A tunable Bragg grating also disposed in the semiconductor substrate may be optically coupled to the gain medium to tune an output wavelength of the optical beam. The semiconductor substrate further includes an optical modulator optically coupled to receive the optical beam. The optical modulator is coupled to modulate the optical beam in response to a modulation signal.