公开(公告)号：US6148832A

公开(公告)日：2000-11-21

申请号：US145606

申请日：1998-09-02

申请人： Mark C. Gilmer ,  Mark I. Gardner ,  Robert Paiz

发明人： Mark C. Gilmer ,  Mark I. Gardner ,  Robert Paiz

IPC分类号： B08B9/093 ,  C11D7/08 ,  C11D7/32 ,  C11D7/50 ,  C11D11/00 ,  B08B3/02 ,  B08B9/00

CPC分类号： C11D7/08 ,  B08B9/093 ,  C11D11/0041 ,  C11D7/5013 ,  C11D7/3209

摘要： An apparatus for in-situ cleaning of polysilicon-coated quartz furnaces are presented. Traditionally, disassembling and reassembling the furnace is required to clean the quartz. This procedure requires approximately four days of down time which can be very costly for a company. In addition, cleaning the quartz requires large baths filled with a cleaning agent. These baths occupy a large amount of laboratory space and require a large amount of the cleaning agent. Cleaning the furnace in-situ eliminates the very time consuming procedure of assembling and disassembling the furnace and at the same time requires less laboratory space and less amount of cleaning agent. The polysilicon remover may be either a mixture of hydrofluoric and nitric acid or TMAH. TMAH is preferred because it less hazardous than hydrofluoric acid and compatible with more materials. The cleaning agent may be introduced into the furnace either from the built-in injectors or from additionally installed injectors. If the built-in injectors are used, the input system of the furnace is cleaned in addition to the quartz inner lining.

摘要翻译： 介绍了一种用于原位清洗多晶硅涂层石英炉的设备。 传统上，需要拆卸和重新组装炉子来清洁石英。 该程序需要大约四天的停机时间，这对公司来说可能是非常昂贵的。 此外，清洁石英需要大量的填充有清洁剂的浴池。 这些浴室占据大量的实验室空间，需要大量的清洁剂。 原地清洗炉子消除了组装和拆卸炉子非常耗时的过程，同时需要更少的实验室空间和更少量的清洁剂。 多晶硅去除剂可以是氢氟酸和硝酸或TMAH的混合物。 TMAH是优选的，因为它比氢氟酸更危险，并且与更多的材料相容。 清洁剂可以从内置注射器或另外安装的注射器引入炉中。 如果使用内置注射器，除了石英内衬之外，还要清洁炉子的输入系统。

公开(公告)号：US06214123B1

公开(公告)日：2001-04-10

申请号：US09137902

申请日：1998-08-20

申请人： Mark I. Gardner ,  Mark C. Gilmer ,  Robert Paiz

发明人： Mark I. Gardner ,  Mark C. Gilmer ,  Robert Paiz

IPC分类号： C23C1600

CPC分类号： C23C16/45514 ,  C23C16/4409 ,  C23C16/4584

摘要： The present disclosure relates to a chemical vapor deposition system including a chemical vapor deposition chamber, and a circlet wafer positioned within the chemical vapor deposition chamber. The circlet wafer is mounted on a rotatable member that at least partially extends through an opening of the wafer. A drive mechanism is used to rotate the rotatable member and the circlet wafer. The system also includes a gas injector for injecting reactive gases toward the circlet wafer. The present disclosure also relates to a chemical vapor deposition system including a chemical vapor deposition chamber, a wafer positioned within the chemical vapor deposition chamber, and a gas injector for injecting first and second reactive gases toward the wafer. The gas injector includes a mixing region for mixing the first and second reactive gases before the first and second reactive gases are discharged from the gas injector.

摘要翻译： 本公开涉及包括化学气相沉积室和位于化学气相沉积室内的圆盘晶片的化学气相沉积系统。 小圆片安装在至少部分地延伸穿过晶片的开口的可旋转构件上。 使用驱动机构来旋转可旋转构件和小圆片。 该系统还包括用于将反应性气体注入到小圆片的气体注射器。 本公开还涉及包括化学气相沉积室，位于化学气相沉积室内的晶片的化学气相沉积系统和用于向晶片注入第一和第二反应气体的气体注入器。 气体喷射器包括用于在第一和第二反应气体从气体喷射器排出之前混合第一和第二反应气体的混合区域。

公开(公告)号：US6140191A

公开(公告)日：2000-10-31

申请号：US157973

申请日：1998-09-21

申请人： Mark I. Gardner ,  Mark C. Gilmer ,  Robert Paiz

发明人： Mark I. Gardner ,  Mark C. Gilmer ,  Robert Paiz

IPC分类号： H01L21/265 ,  H01L21/336 ,  H01L21/8238

CPC分类号： H01L29/66575 ,  H01L21/823814 ,  H01L21/823842 ,  H01L21/2652 ,  H01L29/66545

摘要： An integrated circuit and a method of making a transistor thereof are provided. The method includes the steps of forming a first stack on the substrate and a second stack on substrate in spaced-apart relation to the first stack, where the first stack has a first layer and first and second spacers adjacent to the first layer and the second stack has a second layer and third and fourth spacers adjacent to the second layer. A gate dielectric layer is formed on the substrate between the first and second stacks and a first conductor layer is formed on the gate dielectric layer. A first source/drain region is formed beneath the first conductor layer and a second source/drain region is formed beneath the second conductor layer. The first and second layers are removed and a first contact is formed on the first source/drain region and a second contact is formed on the second source/drain region. The method integrates gate and source/drain region formation and provides for gate electrodes with work functions tailored for n-channel and p-channel devices.

摘要翻译： 提供集成电路及其制造晶体管的方法。 该方法包括以下步骤：在衬底上形成第一堆叠，并且在衬底上形成与第一堆叠间隔开的第二叠层，其中第一堆叠具有第一层，第一和第二衬垫与第一层相邻， 堆叠具有与第二层相邻的第二层和第三和第四间隔物。 在第一和第二堆叠之间的衬底上形成栅极电介质层，并且在栅极电介质层上形成第一导体层。 第一源极/漏极区域形成在第一导体层下面，并且第二源极/漏极区域形成在第二导体层下面。 去除第一层和第二层，并且在第一源极/漏极区上形成第一接触，并且在第二源极/漏极区上形成第二接触。 该方法集成了栅极和源极/漏极区域形成，为门极提供了针对n沟道和p沟道器件定制的工作功能。

公开(公告)号：US6051487A

公开(公告)日：2000-04-18

申请号：US993612

申请日：1997-12-18

申请人： Mark I. Gardner ,  H. Jim Fulford ,  Mark C. Gilmer ,  Robert Paiz

发明人： Mark I. Gardner ,  H. Jim Fulford ,  Mark C. Gilmer ,  Robert Paiz

IPC分类号： H01L21/28 ,  H01L21/336 ,  H01L29/49 ,  H01L29/51 ,  H01L21/3205

CPC分类号： H01L21/28194 ,  H01L21/28238 ,  H01L29/495 ,  H01L29/517 ,  H01L29/66545 ,  H01L29/66575 ,  H01L29/6659 ,  H01L29/66537

摘要： A semiconductor device is formed by forming a sacrificial plug over a substrate and forming active regions in the substrate adjacent the sacrificial plug. A film is then formed over portions of the substrate adjacent the sacrificial plug. The sacrificial plug is then selectively removed leaving an opening in the film, and a gate electrode is formed in the opening. The sacrificial plug can be formed from several materials including, for example, polysilicon and nitrogen-bearing species such as nitride. The gate electrode may, for example, be formed from temperature-sensitive metals such as copper since the gate electrode may be formed subsequent to high temperature steps of the fabrication, such as a source drain anneal, for example.

摘要翻译： 半导体器件通过在衬底上形成牺牲插塞并在邻近牺牲插塞的衬底中形成有源区而形成。 然后在与牺牲插塞相邻的衬底的部分上形成膜。 然后选择性地去除牺牲塞，在膜中留下开口，并且在开口中形成栅电极。 牺牲塞可以由几种材料形成，包括例如多晶硅和含氮物质如氮化物。 栅电极可以例如由诸如铜的温度敏感金属形成，因为栅电极可以在制造的高温步骤（例如源极漏极退火）之后形成。

公开(公告)号：US5851307A

公开(公告)日：1998-12-22

申请号：US842092

申请日：1997-04-28

申请人： Mark C. Gilmer ,  Mark I. Gardner ,  Robert Paiz

发明人： Mark C. Gilmer ,  Mark I. Gardner ,  Robert Paiz

IPC分类号： B08B3/08 ,  B08B9/00 ,  C23C16/44

CPC分类号： C23C16/4407 ,  B08B3/08 ,  B08B9/00 ,  Y10S438/905

摘要： A method for in-situ cleaning of polysilicon-coated quartz furnaces are presented. Traditionally, disassembling and reassembling the furnace is required to clean the quartz. This procedure requires approximately four days of down time which can be very costly for a company. In addition, cleaning the quartz requires large baths filled with a cleaning agent. These baths occupy a large amount of laboratory space and require a large amount of the cleaning agent. Cleaning the furnace in-situ eliminates the very time consuming procedure of assembling and disassembling the furnace and at the same time requires less laboratory space and less amount of cleaning agent. The polysilicon remover may be either a mixture of hydrofluoric and nitric acid or TMAH. TMAH is preferred because it less hazardous than hydrofluoric acid and compatible with more materials. The cleaning agent may be introduced into the furnace either from the built-in injectors or from additionally installed injectors. If the built-in injectors are used, the input system of the furnace is cleaned in addition to the quartz inner lining.

摘要翻译： 提出了一种用于原位清洗多晶硅涂覆的石英炉的方法。 传统上，需要拆卸和重新组装炉子来清洁石英。 该程序需要大约四天的停机时间，这对公司来说可能是非常昂贵的。 此外，清洁石英需要大量的填充有清洁剂的浴池。 这些浴室占据大量的实验室空间，需要大量的清洁剂。 原地清洗炉子消除了组装和拆卸炉子非常耗时的过程，同时需要更少的实验室空间和更少量的清洁剂。 多晶硅去除剂可以是氢氟酸和硝酸或TMAH的混合物。 TMAH是优选的，因为它比氢氟酸更危险，并且与更多的材料相容。 清洁剂可以从内置注射器或另外安装的注射器引入炉中。 如果使用内置注射器，除了石英内衬之外，还要清洁炉子的输入系统。

公开(公告)号：US06727569B1

公开(公告)日：2004-04-27

申请号：US09063081

申请日：1998-04-21

申请人： Mark I. Gardner ,  Mark C. Gilmer ,  Robert Paiz

发明人： Mark I. Gardner ,  Mark C. Gilmer ,  Robert Paiz

IPC分类号： H01L2900

CPC分类号： H01L21/76235

摘要： A structure and an improved isolation trench between active regions within the semiconductor substrate involves forming on a silicon substrate and forming a nitride layer on the pad layer. Thereafter, a photoresist layer is patterned on the silicon nitride layer such that regions of the nitride layer are exposed where an isolation trench will subsequently be formed. Next, the exposed regions of the nitride layer and the pad layer situated below the exposed regions of the nitride layer are etched away to expose regions of the silicon substrate. Subsequently, isolation trenches are etched into the silicon substrate with a dry etch process. A trench liner is then formed and nitrogen incorporated into a portion of the trench liner to form an oxynitride layer. After formation of the oxynitride layer, the trench is filled with a dielectric preferably comprised of a CVD oxide. Thereafter, the CVD fill dielectric is planarized and the nitride layer is stripped away.

摘要翻译： 半导体衬底内的有源区域之间的结构和改进的隔离沟槽包括在硅衬底上形成并在衬垫层上形成氮化物层。 此后，在氮化硅层上图案化光致抗蚀剂层，使得随后将形成隔离沟槽的氮化物层的区域被暴露。 接下来，蚀刻掉位于氮化物层的暴露区域之下的氮化物层和焊盘层的暴露区域以暴露硅衬底的区域。 随后，用干蚀刻工艺将隔离沟槽蚀刻到硅衬底中。 然后形成沟槽衬垫，并且氮结合到沟槽衬垫的一部分中以形成氧氮化物层。 在形成氮氧化物层之后，用优选由CVD氧化物构成的电介质填充沟槽。 此后，CVD填充电介质被平坦化，并且氮化物层被剥离。

公开(公告)号：US6165314A

公开(公告)日：2000-12-26

申请号：US588910

申请日：2000-06-07

申请人： Mark I. Gardner ,  Mark C. Gilmer

发明人： Mark I. Gardner ,  Mark C. Gilmer

IPC分类号： H01L21/00

CPC分类号： H01L21/67069

摘要： The present invention is directed to a method and apparatus for reducing the thickness of a process layer. The method comprises generating a relatively high velocity gas stream comprised of active ions that will react with the process layer, and moving the wafer relative to the nozzle to effect a reduction in the thickness of the process layer. The apparatus is comprised of a process chamber, means for securing a wafer in the chamber, a nozzle having an exit that is substantially the same width as the diameter of the wafer positioned in the chamber. The apparatus further comprises a means for moving the wafer relative to the nozzle.

摘要翻译： 本发明涉及一种减小加工层厚度的方法和装置。 该方法包括产生由活性离子组成的相对高速气流，该活性离子将与处理层反应，并相对于喷嘴移动晶片以实现工艺层厚度的减小。 该装置包括处理室，用于将晶片固定在腔室中的装置，具有出口的喷嘴，该出口的宽度基本上与位于腔室中的晶片的直径相同。 该装置还包括用于相对于喷嘴移动晶片的装置。

公开(公告)号：US6152075A

公开(公告)日：2000-11-28

申请号：US143605

申请日：1998-08-31

申请人： Mark I. Gardner ,  Mark C. Gilmer

发明人： Mark I. Gardner ,  Mark C. Gilmer

IPC分类号： C23C16/44 ,  C23C16/458 ,  C23C16/46 ,  C23C16/48 ,  C23C16/511 ,  C23C16/00

CPC分类号： C23C16/4409 ,  C23C16/4588 ,  C23C16/46 ,  C23C16/483 ,  C23C16/511

摘要： The present disclosure relates to a chemical vapor deposition system including a chemical vapor deposition chamber having a wafer position at which a wafer can be placed during chemical wafer deposition processing, and a source of reactive gases for providing reactive gases to the chemical vapor deposition chamber. This system also includes a coherent radiation source for directing a beam of coherent radiation toward the wafer position, and a shield positioned between the coherent radiation source and the wafer position. This shield is adapted to distribute energy from the beam of coherent radiation across the wafer when the wafer is located at the wafer position.

摘要翻译： 本公开涉及一种化学气相沉积系统，该化学气相沉积系统包括化学气相沉积室，该化学气相沉积室具有在化学晶片沉积处理期间可以放置晶片的晶片位置，以及用于向化学气相沉积室提供反应气体的反应气体源。 该系统还包括用于将相干辐射束引向晶片位置的相干辐射源，以及位于相干辐射源和晶片位置之间的屏蔽。 当晶片位于晶片位置时，该屏蔽适于将来自相干辐射束的能量分布在晶片上。

公开(公告)号：US6124172A

公开(公告)日：2000-09-26

申请号：US163688

申请日：1998-09-30

申请人： Mark I. Gardner ,  Mark C. Gilmer

发明人： Mark I. Gardner ,  Mark C. Gilmer

IPC分类号： H01L21/266 ,  H01L21/28 ,  H01L21/336 ,  H01L21/331 ,  H01L21/335

CPC分类号： H01L29/66598 ,  H01L21/266 ,  H01L21/28114 ,  H01L21/28123 ,  H01L29/6659

摘要： A method of making a semiconductor device includes forming gate electrode over a substrate and a protective layer over the gate electrode. A portion of the protective layer is selectively removed to expose a peripheral region of the gate electrode. A remainder of the protective layer remains disposed over a central region of the gate electrode. An upper portion of the peripheral region of the gate electrode is then removed typically leaving an underlying portion. Often, a dopant material is implanted into the substrate adjacent to and beneath the underlying portion to simultaneously form lightly-doped and heavily-doped regions beneath and adjacent to the underlying portion, respectively. In addition, all or part of the underlying portion may be oxidized to provide a gate electrode with reduced width.

摘要翻译： 制造半导体器件的方法包括在栅极上方形成栅电极和保护层。 选择性地去除保护层的一部分以露出栅电极的外围区域。 保护层的其余部分保持设置在栅电极的中心区域上方。 然后通常离开底层部分去除栅电极的周边区域的上​​部。 通常，将掺杂剂材料注入到与底层部分相邻并且在下面部分附近的衬底中，以分别在下面部分和下面部分形成轻掺杂和重掺杂区域。 此外，底层部分的全部或部分可以被氧化以提供具有减小的宽度的栅电极。

公开(公告)号：US6106618A

公开(公告)日：2000-08-22

申请号：US88783

申请日：1998-06-01

申请人： Mark C. Gilmer ,  Mark I. Gardner

发明人： Mark C. Gilmer ,  Mark I. Gardner

IPC分类号： B05B9/04 ,  B05B13/02 ,  B05C9/14 ,  B05C11/08 ,  G03F7/16 ,  H01L21/00 ,  B05C11/02 ,  B05B3/02 ,  B05C9/06 ,  B05C13/00

CPC分类号： H01L21/6715 ,  B05B13/0228 ,  B05C11/08 ,  G03F7/162 ,  B05B9/0403 ,  B05C9/14

摘要： Apparatus and method for depositing fluids on both sides of a semiconductor wafer that has a central opening are provided. In one aspect, the apparatus includes a mandrel for holding the wafer and a motor coupled to the mandrel and that is operable to rotate the mandrel. The apparatus also includes means for dispensing a first volume of fluid on the semiconductor wafer and a second volume of fluid on the semiconductor wafer. According to the method, a semiconductor wafer is coupled to a rotatable mandrel. The mandrel is rotated to spin the semiconductor wafer and a semiconductor processing fluid is sprayed on the first and second sides of the semiconductor wafer.

摘要翻译： 提供了用于在具有中心开口的半导体晶片的两侧上沉积流体的装置和方法。 在一个方面，该装置包括用于保持晶片的心轴和联接到心轴的马达，并且可操作以用于旋转心轴。 该装置还包括用于在半导体晶片上分配第一体积的流体的装置和半导体晶片上的第二体积的流体。 根据该方法，将半导体晶片连接到可旋转心轴。 旋转心轴以旋转半导体晶片，并且半导体处理流体喷射在半导体晶片的第一和第二侧上。