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    Process for depositing a SiOx film having reduced intrinsic stress and/or reduced hydrogen content
    1.
    发明授权
    Process for depositing a SiOx film having reduced intrinsic stress and/or reduced hydrogen content 有权
    沉积具有降低的本征应力和/或降低的氢含量的SiOx膜的方法

    公开(公告)号：US06326064B1

    公开(公告)日：2001-12-04

    申请号：US09277606

    申请日：1999-03-29

    申请人： Dean R. Denison ,  Mark Weise

    发明人： Dean R. Denison ,  Mark Weise

    IPC分类号： C23C1640

    摘要： A process for reducing intrinsic stress and/or hydrogen content of a SiOx film grown by chemical vapor deposition. The process is applicable to plasma-enhanced and electron cyclotron resonance chemical vapor deposition of silicon dioxide wherein a vapor phase etchant is introduced while growing the silicon dioxide film. The presence of the etchant during the plasma deposition process allows for selective removal of high energy silicon dioxide molecules in the growing film thus reducing intrinsic stress within the film. The use of halogen etchants further reduces the amount of hydrogen present as hydroxyl within the film.

    摘要翻译： 一种降低通过化学气相沉积生长的SiOx膜的固有应力和/或氢含量的方法。 该方法适用于二氧化硅的等离子体增强和电子回旋共振化学气相沉积，其中在生长二氧化硅膜的同时引入气相蚀刻剂。 在等离子体沉积工艺期间存在蚀刻剂允许选择性地去除生长膜中的高能二氧化硅分子，从而降低膜内的本征应力。 卤素蚀刻剂的使用进一步减少了作为膜内的羟基存在的氢的量。

    Process for depositing a SiO.sub.x film having reduced intrinsic stress and/or reduced hydrogen content
    2.
    发明授权
    Process for depositing a SiO.sub.x film having reduced intrinsic stress and/or reduced hydrogen content 失效
    沉积具有降低的本征应力和/或降低的氢含量的SiOx膜的方法

    公开(公告)号：US5750211A

    公开(公告)日：1998-05-12

    申请号：US106768

    申请日：1993-07-16

    申请人： Mark Weise ,  Dean R. Denison

    发明人： Mark Weise ,  Dean R. Denison

    IPC分类号： C23C16/40 ,  C23C16/44 ,  C23C16/50 ,  C23C16/511 ,  H01L21/316 ,  B05D3/06

    CPC分类号： C23C16/401 ,  C23C16/44

    摘要： A process for reducing intrinsic stress and/or hydrogen content of a SiO.sub.x film grown by ECR chemical vapor deposition, wherein a vapor phase etchant is introduced while growing the silicon dioxide film. The presence of the etchant during the plasma deposition process allows for selective removal of high energy silicon dioxide molecules in the growing film thus reducing intrinsic stress within the film. The use of halogen etchants further reduces the amount of hydrogen present as hydroxyl within the film.

    摘要翻译： 一种降低通过ECR化学气相沉积生长的SiO x膜的固有应力和/或氢含量的方法，其中在生长二氧化硅膜的同时引入气相蚀刻剂。 在等离子体沉积工艺期间存在蚀刻剂允许选择性地去除生长膜中的高能二氧化硅分子，从而降低膜内的本征应力。 卤素蚀刻剂的使用进一步减少了作为膜内的羟基存在的氢的量。

    Production of activated char using hot gas
    7.
    发明申请
    Production of activated char using hot gas 失效
    使用热气生产活性炭

    公开(公告)号：US20060204430A1

    公开(公告)日：2006-09-14

    申请号：US11224590

    申请日：2005-09-12

    申请人： Lawrence Bool ,  Chien-Chung Chao ,  Mark Weise ,  Jurron Bradley

    发明人： Lawrence Bool ,  Chien-Chung Chao ,  Mark Weise ,  Jurron Bradley

    IPC分类号： C01D3/00

    CPC分类号： C10J3/485 ,  B01J20/20 ,  C01B32/336 ,  C10J2300/093 ,  C10J2300/0959 ,  C10J2300/0973 ,  C10J2300/1846

    摘要： A gas mixture preheated to high temperatures using an oxy-fuel, an oxygen-enriched air-fuel or an air-fuel burner is used to devolatilize and partially oxidize carbonaceous feedstock, thereby producing an active residual char that can be used in applications utilizing activated carbon. Use of hot gas and ground carbonaceous feedstock allows the equipment to be minimized, thereby allowing the activated carbon to be produced at or near points of use, for example the production of activated char at or near utility boilers for use in the reduction of mercury emissions from flue gas streams.

    摘要翻译： 使用氧燃料，富氧空气燃料或空气 - 燃料燃烧器预热至高温的气体混合物用于使含碳原料脱挥发分并部分氧化，从而产生活性残余炭，其可用于利用活化的 碳。 使用热气和粉碎的碳质原料可使设备最小化，从而允许在使用点或附近生产活性炭，例如在用于减少汞排放的公用锅炉附近生产活性炭 来自烟气流。

    Method of high density plasma CVD gap-filling
    8.
    发明授权
    Method of high density plasma CVD gap-filling 失效
    高密度等离子体CVD间隙填充方法

    公开(公告)号：US6106678A

    公开(公告)日：2000-08-22

    申请号：US83133

    申请日：1998-05-22

    申请人： Paul Kevin Shufflebotham ,  Mark Weise

    发明人： Paul Kevin Shufflebotham ,  Mark Weise

    IPC分类号： C23C16/04 ,  C23C16/40 ,  C23C16/503 ,  C23C16/511 ,  H01L21/316 ,  H01L21/762 ,  C23C14/34

    CPC分类号： H01L21/02164 ,  C23C16/045 ,  C23C16/402 ,  C23C16/503 ,  C23C16/511 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/31612 ,  H01L21/76224

    摘要： A gap filling process of depositing a film of SiO.sub.2 in gaps on a substrate by generating plasma in a process chamber by energizing gas containing silicon, oxygen and a heavy noble gas such as xenon or krypton. The gaps can have widths below 0.5 .mu.m and aspect ratios higher than 1.5:1. A substrate is supported on a substrate support wherein a gas passage supplies a temperature control gas into a space between opposed surfaces of the substrate and the substrate support, and the film is grown in the gaps on the substrate by contacting the substrate with the plasma. The silicon reactant can be SiH.sub.4 and the oxygen reactant can be pure oxygen gas supplied by O.sub.2 /SiH.sub.4 ratio of .ltoreq.1.05. The plasma can be a high density plasma produced in an ECR or TCP reactor and the substrate can be a silicon wafer including aluminum conductor lines.

    摘要翻译： 一种间隙填充工艺，其通过在含有硅，氧气和重稀有气体如氙或氪气的气体中通过在处理室中产生等离子体而在衬底上的间隙中沉积SiO 2膜。 间隙可以具有低于0.5μm的宽度和高于1.5:1的纵横比。 基板被支撑在基板支撑件上，其中气体通道将温度控制气体提供到基板的相对表面和基板支撑件之间的空间中，并且通过使基板与等离子体接触而在基板上的间隙中生长膜。 硅反应物可以是SiH 4，氧反应物可以是通过O 2 / SiH 4比率