摘要:
The invention relates to a procedure for operating a bus system, as well as a bus system with a line, and two adjoining lines, whereby the lines each comprise two line sections, which are connected with one another by means of a line amplifier and/or buffer device, and whereby the line amplifier and/or buffer device connected with the line sections of the line is constructed as an inverting line amplifier and/or buffer device, and the line amplifier and/or buffer devices connected with the line sections of the adjoining lines are constructed as non-inverting line amplifier and/or buffer devices, or vice versa.
摘要:
In a semiconductor memory, bit lines are disposed in such a way that in each case two inverted and two non-inverted bit lines lie next to one another. Adjacent switching transistors for connecting the bit lines to an inverted or a non-inverted collective line are connected to the corresponding collective line by a common contact. An advantage in terms of area is afforded by the fact that the two switching transistors have a common doping region.
摘要:
An apparatus for generating a second signal having a clock based on a second clock from a first signal with a first clock comprises first and second means for sampling the first signal to determine whether the first signal has a predetermined logic state, wherein first means samples the first signal with the second clock, and second means samples the first signal with a clock phase shifted to the second clock. Means for generating the second signal generates the second signal based on the second clock if it has been determined by at least one means for sampling that the first signal has the predetermined state. Especially for time critical applications, such as a DDR-RAM, a valuable latency saving is provided by the present invention.
摘要:
A method and an integrated circuit for determining the state of a resistivity changing memory cell. In one embodiment the method includes detecting a first resistance of the resistivity changing memory cell, determining whether the first resistance value is smaller than a predetermined threshold value thereby determining a first result value, initializing the resistivity changing memory cell into one of at least four resistivity changing memory states, detecting a second resistance value of the resistivity changing memory cell, determining whether the second resistance value is smaller than the predetermined threshold value determining a second result value, and determining the state of the resistivity changing memory cell state using the first and the second result values.
摘要:
The integrated memory has a data line pair, which is connected to a bit line pair via at least one differential amplifier. In addition, it has a control unit for setting first potential states on the data line pair which correspond to the differential signals of data to be written to the memory cells, and for setting at least one second potential state on the data line pair which does not correspond to any datum to be written to the memory cells. Furthermore, it has a detector unit having two inputs connected to the data line pair. The detector unit initiates a specific control function when the second potential state of the data line pair occurs.
摘要:
An integrated circuit includes an array of memory cells, and an error correction code circuit configured to correct errors in data read from the array based at least in part on a map that identifies locations of erratic memory cells in the array.
摘要:
An integrated circuit includes an array of resistivity changing memory cells. The integrated circuit includes a circuit configured to invert a data word to be written to the array in response to determining that writing the inverted data word would use less power than writing the non-inverted data word.
摘要:
The invention relates to a method for resetting at least one circuit part of an integrated circuit, in particular a synchronous semiconductor memory, in which a clock signal and a clock signal that is inverted with respect to the latter are provided in order to clock the integrated circuit, and in which, when a reset condition is present, an item of reset information is coded onto the clock signal or onto the inverted clock signal. The invention also relates to a circuit arrangement for carrying out the method according to the invention, having a clock suppression device and a decoder circuit, which is intended to extract the reset information from the clock signal or from the inverted clock signal.
摘要:
The integrated memory has byte selection lines for selecting all the bit lines of a respective byte, as well as masking signals that are allocated to the respective byte of at least one word. In addition, the memory has a column decoder with outputs which are connected to the word selection lines, each of which, when addressed, causes all the byte selection lines for one of the words to be simultaneously selected if none of the masking signals are active. The masking signals, when activated, prevent the addressed word selection line from selecting the byte selection lines, allocated to a corresponding byte, for a corresponding word.