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    SEMICONDUCTOR WAFER, SEMICONDUCTOR DEVICE, AND METHOD FOR PRODUCING SEMICONDUCTOR WAFER
    2.
    发明申请
    SEMICONDUCTOR WAFER, SEMICONDUCTOR DEVICE, AND METHOD FOR PRODUCING SEMICONDUCTOR WAFER 有权
    半导体晶体管，半导体器件及其制造方法

    公开(公告)号：US20120267688A1

    公开(公告)日：2012-10-25

    申请号：US13495746

    申请日：2012-06-13

    申请人： Sadanori YAMANAKA ,  Tomoyuki TAKADA ,  Masahiko HATA

    发明人： Sadanori YAMANAKA ,  Tomoyuki TAKADA ,  Masahiko HATA

    IPC分类号： H01L29/267 ,  H01L21/20 ,  H01L29/06

    CPC分类号： H01L21/02639 ,  H01L21/02381 ,  H01L21/0243 ,  H01L21/0245 ,  H01L21/02532 ,  H01L21/02546

    摘要： To improve the flatness of the surface and improve the reliability of a semiconductor device when expitaxially growing semiconductor crystal layers of different types on a single silicon wafer, provided is a semiconductor wafer which includes: a base wafer having a silicon crystal in the surface thereof, the silicon crystal having a first dent and a second dent; a first Group IVB semiconductor crystal located in the first dent and exposed; a second Group IVB semiconductor crystal located in the second dent; and a Group III-V compound semiconductor crystal located above the second Group IVB semiconductor crystal in the second dent and exposed.

    摘要翻译： 为了提高表面的平坦度，提高在单晶硅晶片上外延生长不同种类的半导体晶体层时的半导体器件的可靠性，提供了一种半导体晶片，其包括：在其表面具有硅晶体的基底晶片， 所述硅晶体具有第一凹陷和第二凹陷; 第一组IVB半导体晶体位于第一凹陷中并暴露; 位于第二凹陷中的第二组IVB半导体晶体; 以及位于第二凹陷中的第二IVB族半导体晶体上方并暴露的III-V族化合物半导体晶体。

    SENSOR, SEMICONDUCTOR WAFER, AND METHOD OF PRODUCING SEMICONDUCTOR WAFER
    3.
    发明申请
    SENSOR, SEMICONDUCTOR WAFER, AND METHOD OF PRODUCING SEMICONDUCTOR WAFER 有权
    传感器，半导体波形和半导体波形的制造方法

    公开(公告)号：US20120138898A1

    公开(公告)日：2012-06-07

    申请号：US13310522

    申请日：2011-12-02

    申请人： Masahiko HATA ,  Tomoyuki TAKADA ,  Sadanori YAMANAKA ,  Taro ITATANI

    发明人： Masahiko HATA ,  Tomoyuki TAKADA ,  Sadanori YAMANAKA ,  Taro ITATANI

    IPC分类号： H01L31/0352

    CPC分类号： H01L27/1446 ,  G01J5/024 ,  H01L31/0392 ,  H01L31/0543 ,  H01L31/1035 ,  H01L31/1852 ,  Y02E10/52 ,  Y02E10/544 ,  Y02P70/521

    摘要： A sensor includes: a base wafer containing silicon; a seed member provided directly or indirectly on the base wafer; and a photothermal absorber that is made of a Group 3-5 compound semiconductor lattice-matching or pseudo lattice-matching the seed member and being capable of generating a carrier upon absorbing light or heat, where the photothermal absorber outputs an electric signal in response to incident light to be introduced into the photothermal absorber or heat to be applied to the photothermal absorber. A semiconductor wafer includes: a base wafer containing silicon; a seed member provided directly or indirectly on the base wafer; and a photothermal absorber that is made of a Group 3-5 compound semiconductor lattice-matching or pseudo lattice-matching the seed member and being capable of generating a carrier upon absorbing light or heat.

    摘要翻译： 传感器包括：含有硅的基底晶片; 种子构件直接或间接地设置在基底晶片上; 以及由第3-5族化合物半导体晶格匹配或伪晶格匹配种子构件并且能够在吸收光或热时产生载体的光热吸收体，其中光热吸收体输出响应于 入射到光热吸收器中的入射光或被加到光热吸收器上的热量。 半导体晶片包括：含有硅的基底晶片; 种子构件直接或间接地设置在基底晶片上; 以及由3-5族化合物半导体晶格匹配或伪晶格匹配种子构件制成并且能够在吸收光或热时产生载体的光热吸收剂。

    SEMICONDUCTOR WAFER, SEMICONDUCTOR DEVICE, AND A METHOD OF PRODUCING A SEMICONDUCTOR WAFER
    4.
    发明申请
    SEMICONDUCTOR WAFER, SEMICONDUCTOR DEVICE, AND A METHOD OF PRODUCING A SEMICONDUCTOR WAFER 审中-公开
    半导体晶体管，半导体器件和半导体晶体管的制造方法

    公开(公告)号：US20120319171A1

    公开(公告)日：2012-12-20

    申请号：US13594389

    申请日：2012-08-24

    申请人： Tomoyuki TAKADA ,  Sadanori YAMANAKA

    发明人： Tomoyuki TAKADA ,  Sadanori YAMANAKA

    IPC分类号： H01L29/26 ,  H01L21/20

    CPC分类号： H01L21/02543 ,  H01L21/02381 ,  H01L21/02433 ,  H01L21/02441 ,  H01L21/0245 ,  H01L21/02461 ,  H01L21/02463 ,  H01L21/02502 ,  H01L21/02546 ,  H01L21/02609 ,  H01L21/0262 ,  H01L21/02639 ,  H01L29/66318

    摘要： A semiconductor wafer includes a base wafer, a first crystal layer, a second crystal layer and a third crystal layer. The first crystal layer has a first surface having a same orientation as the base wafer, and a second surface having a different orientation from the first surface, the second crystal layer has a third surface having the same orientation as the first surface, and a fourth surface having the same orientation as the second surface, the third crystal layer is in contact with a part of the third surface and the fourth surface. A thickness ratio of the second crystal layer in a region adjoining the first surface to a region adjoining the second surface is larger than a thickness ratio of the third crystal layer in a region adjoining the third surface to a region adjoining the fourth surface.

    摘要翻译： 半导体晶片包括基底晶片，第一晶体层，第二晶体层和第三晶体层。 第一晶体层具有与基底晶片相同的取向的第一表面和与第一表面取向不同的第二表面，第二晶体层具有与第一表面相同取向的第三表面， 表面具有与第二表面相同的取向，第三晶体层与第三表面和第四表面的一部分接触。 第二晶体层的与第一表面相邻的区域与邻接第二表面的区域的厚度比大于与第三表面相邻的区域中的第三晶体层与邻接第四表面的区域的厚度比。