Method of measuring film thicknesses
    1.
    发明授权
    Method of measuring film thicknesses 失效
    测量薄膜厚度的方法

    公开(公告)号:US5493401A

    公开(公告)日:1996-02-20

    申请号:US309164

    申请日:1994-09-20

    IPC分类号: G01B11/06

    CPC分类号: G01B11/0625

    摘要: Light of an observation wavelength range is irradiated upon a sample object to measure spectral reflection ratios, and an waveform is developed from the spectral reflection ratios. Based on the total number of peaks and valleys found in the interference waveform and two wavelengths specified within the observation wavelength range, possible ranges for the film thicknesses of the respective transparent films are determined. While changing tentative film thicknesses of the respective transparent films each by a predetermined film thickness pitch within the film thickness ranges, a deviation between theoretical spectral reflectance and measured spectral reflectance with respect to the tentative film thicknesses is calculated to thereby find a film thickness combination which causes the deviation to be minimum.

    摘要翻译: 将观察波长范围的光照射在样品物体上,以测量光谱反射率,并从光谱反射率展开波形。 基于在干涉波形中发现的峰和谷的总数以及在观察波长范围内指定的两个波长,确定各透明膜的膜厚的可能范围。 在膜厚度范围内,通过预定的膜厚度间距改变各透明膜的临时膜厚度,计算理论光谱反射率和测定的光谱反射率相对于试样膜厚度的偏差,从而找到膜厚组合, 导致偏差最小。

    Method of focusing optical head on object body and automatic focusing
device for optical inspection system including tilt detection
    3.
    发明授权
    Method of focusing optical head on object body and automatic focusing device for optical inspection system including tilt detection 失效
    聚焦对象物体上的光头和用于光学检测系统的自动聚焦装置的方法,包括倾斜检测

    公开(公告)号:US5136149A

    公开(公告)日:1992-08-04

    申请号:US684746

    申请日:1991-04-15

    摘要: A semiconductor wafer (WF) is supported on a movable table mechanism (50). A light (L1) is applied to the surface of the semiconductor wafer to inspect the surface state of the semiconductor wafer. In order to maintain the surface of the wafer at the focal point of an objective lens (11) and maintaining the angle of the wafer in perpendicular to the optical axis of the objective lens, a light beam (B1) is generated and directed to the wafer. The reflected light (B2) is divided into first and second beams (BD1, BD2). The first light beam is received by a one-dimensional PSD (position sensing device), while the second light beam is received by a two-dimensional PSD. In response to respective outputs of the one-dimensional PSD and the two-dimensional PSD, the movable table mechanism is driven so as to maintain an in-focus state of the wafer and the objective lens even when the wafer is moved for scanning of respective regions on the wafer.

    Method of and apparatus for measuring film thickness
    4.
    发明授权
    Method of and apparatus for measuring film thickness 失效
    薄膜厚度测量方法和设备

    公开(公告)号:US5686993A

    公开(公告)日:1997-11-11

    申请号:US677274

    申请日:1996-07-09

    IPC分类号: G01B11/06

    CPC分类号: G01B11/0625

    摘要: A film thickness measuring apparatus measures the thickness of a thin film which is formed on a substrate with an excellent reproducibility regardless of inclination of a surface of a sample. Since an illumination system (20) includes a glass rod (GL) which corrects wavelength dependencies of luminance distributions of light sources (HL, DL), even when an eclipse in reflected light due to inclination of a sample (SP) decreases the energy of the reflected light, a spectral distribution of the reflected light entering a spectroscopic unit (40) is maintained with almost no change. A control unit (50) performs data conversion of multiplying an actual spectral reflectance by a ratio of an average of the actual spectral reflectance which is determined based on an output from the spectroscopic unit (40) to an average of a calibrated spectral reflectance and thereafter calculates a deviation between the two spectral reflectances. As a result, the film thickness is accurately measured while preventing an influence of inclination of the sample (SP).

    摘要翻译: 薄膜厚度测量装置测量形成在基板上的薄膜的厚度,其重复性优异,而与样品表面的倾斜度无关。 由于照明系统(20)包括校正光源(HL,DL)的亮度分布的波长依赖性的玻璃棒(GL),即使当由于样品(SP)的倾斜而在反射光中的日食降低时,能量 反射光,进入分光单元(40)的反射光的光谱分布几乎保持不变。 控制单元(50)执行数据转换,将实际的光谱反射率乘以基于分光单元(40)的输出确定的实际光谱反射率的平均值与校准的光谱反射率的平均值之比 计算两个光谱反射率之间的偏差。 结果,在防止样品(SP)的倾斜的影响的同时精确测量膜厚度。

    METHOD FOR DETECTING OVERLAY ERROR AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE USING THE SAME
    5.
    发明申请
    METHOD FOR DETECTING OVERLAY ERROR AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE USING THE SAME 有权
    用于检测覆盖误差的方法及使用其制造半导体器件的方法

    公开(公告)号:US20160300767A1

    公开(公告)日:2016-10-13

    申请号:US14978916

    申请日:2015-12-22

    IPC分类号: H01L21/66 G01B11/14 G01B11/27

    摘要: A method for detecting an overlay error includes: forming a first overlay key including a plurality of spaced apart first target patterns having a first pitch on a first layer of a substrate; forming a second overlay key including a plurality of spaced apart second target patterns having a second pitch different than the first pitch on a second layer of the substrate below the first layer; irradiating the first layer and the second layer with incident light having a first wavelength; obtaining a phase pattern of light reflected from the first layer and the second layer; calculating a position of a peak point or a valley point of the phase pattern of the reflected light; and detecting an overlay error of the first layer and the second layer using the position of the peak point or the valley point of the phase pattern.

    摘要翻译: 一种用于检测覆盖误差的方法包括:形成第一覆盖键,该第一覆盖键包括在衬底的第一层上具有第一间距的多个间隔开的第一目标图案; 形成第二覆盖键,其包括在所述第一层下方的所述基板的第二层上具有不同于所述第一间距的第二间距的多个间隔开的第二目标图案; 用具有第一波长的入射光照射第一层和第二层; 获得从第一层和第二层反射的光的相位图案; 计算反射光的相位图案的峰值点或谷点的位置; 以及使用相位图案的峰值点或谷点的位置来检测第一层和第二层的覆盖误差。

    Spectroscopic ellipsometer, film thickness measuring apparatus, and method of focusing in spectroscopic ellipsometer
    6.
    发明授权
    Spectroscopic ellipsometer, film thickness measuring apparatus, and method of focusing in spectroscopic ellipsometer 有权
    光谱椭偏仪,膜厚测量仪,聚焦椭圆偏振光谱仪

    公开(公告)号:US07929139B2

    公开(公告)日:2011-04-19

    申请号:US12196463

    申请日:2008-08-22

    IPC分类号: G01J4/00

    CPC分类号: G01J3/447 G01J3/4412

    摘要: In a spectroscopic ellipsometer, light emitted from a light source enters a measurement surface of a substrate through an optical system in a lighting part so as to incline to the measurement surface to be directed to a light receiving device, and ellipsometry is performed based on spectral intensity of reflected light reflected on the measurement surface, the spectral intensity being acquired by the light receiving device. In focusing of the spectroscopic ellipsometer, a focus position of the measurement surface is obtained based on a total light amount in a predetermined wavelength band of the reflected light, the total light amount being obtained by the light receiving device. In the spectroscopic ellipsometer, since the optical system for ellipsometry and the optical system for focusing are common, it is possible to eliminate influences of change of the optical systems by temperature change or the like and to achieve high accurate focusing.

    摘要翻译: 在光谱椭偏仪中,从光源发出的光通过照明部中的光学系统进入基板的测量面,从而向测量面倾斜而被引导到光接收装置,并且基于光谱进行椭偏仪 在测量表面反射的反射光的强度,由光接收装置获取的光谱强度。 在分光椭偏仪的聚焦中,基于反射光的预定波长带中的总光量,由光接收装置获得的总光量,获得测量表面的聚焦位置。 在分光椭偏仪中,由于用于椭偏仪的光学系统和用于聚焦的光学系统是常见的,因此可以通过温度变化等来消除光学系统的变化的影响,并且实现高精度的聚焦。

    Measuring method and apparatus for measuring depth of trench pattern
    7.
    发明授权
    Measuring method and apparatus for measuring depth of trench pattern 有权
    用于测量沟槽图案深度的测量方法和装置

    公开(公告)号:US07710579B2

    公开(公告)日:2010-05-04

    申请号:US11889391

    申请日:2007-08-13

    IPC分类号: G01B11/02

    CPC分类号: G01B11/0625

    摘要: In a trench shape measuring apparatus, a substrate having a trench pattern extending in a predetermined trench direction on a measurement area is held by a holding part. A light emission part applies illumination light to the measurement area and reflected light of the illumination light from the measurement area is spectrally dispersed by a diffraction grating of a spectroscope, to acquire a measured spectral reflectance. Since the diffraction grating is arranged so that an angle formed between a direction on the substrate corresponding to a grating direction of the diffraction grating and the trench direction becomes 45 degrees, even if an oscillation direction of the reflected light from the substrate is limited by influence of the trench pattern, it is possible to accurately obtain a spectral reflectance of the measurement area without influence of polarization of the reflected light and obtain a depth of the trench pattern with accuracy.

    摘要翻译: 在沟槽形状测量装置中,具有在测量区域上以预定沟槽方向延伸的沟槽图案的衬底由保持部分保持。 发光部将照明光施加到测量区域,并且通过分光镜的衍射光栅使来自测量区域的照明光的反射光被光谱地分散,以获得测量的光谱反射率。 由于衍射光栅被布置成使得对应于衍射光栅的光栅方向的基板上的方向与沟槽方向之间形成的角度成为45度,所以即使来自基板的反射光的振荡方向受到影响的限制 的沟槽图案,可以精确地获得测量区域的光谱反射率而不受反射光的偏振的影响,并且准确地获得沟槽图案的深度。

    Method of and apparatus for inspecting residue of metal film
    9.
    发明授权
    Method of and apparatus for inspecting residue of metal film 失效
    检查金属膜残留物的方法和装置

    公开(公告)号:US6020968A

    公开(公告)日:2000-02-01

    申请号:US304541

    申请日:1999-05-04

    申请人: Masahiro Horie

    发明人: Masahiro Horie

    CPC分类号: G01B11/0625

    摘要: A maximum value of a spectral reflectance at each wavelength with changes in the thickness of a top layer of a multi-layer dielectric film is determined as a maximum reflectance represented by a curve (MLmax) in a graph. In the presence of a residual metal film on the multi-layer dielectric film, the spectral reflectance changes from a curve (A50) to a curve (A5) in the graph with the decrease in the thickness of the residual metal film. In the absence of the residual metal film, the spectral reflectance is represented by a curve (A0) in the graph. Based on the foregoing, a peak wavelength at which the spectral reflectance of a multi-layer film to be judged reaches a peak is determined in a specified wavelength range. When the reflectance of the multi-layer film to be inspected at the peak wavelength is greater than the maximum reflectance, it is concluded that the multi-layer film to be inspected has the residual metal film. When the reflectance of the multi-layer film to be inspected at the peak wavelength is equal to or less than the maximum reflectance, it is concluded that the residual metal film is absent. The presence or absence of the residual metal film on the multi-layer dielectric film is inspected using simple calculation without the need for optical constants of metal.

    摘要翻译: 将多层电介质膜的顶层的厚度变化的各波长处的光谱反射率的最大值确定为由曲线图中的曲线(MLmax)表示的最大反射率。 在多层电介质膜上存在残留金属膜的情况下,随着残留金属膜厚度的减小,光谱反射率从图中的曲线(A50)变化到曲线(A5)。 在不存在残留金属膜的情况下,光谱反射率由曲线(A0)表示。 基于上述,在规定的波长范围内确定待判断的多层膜的光谱反射率达到峰值的峰值波长。 当在峰值波长处检查的多层膜的反射率大于最大反射率时,得出结论,待检查的多层膜具有残留的金属膜。 当在峰值波长下检查的多层膜的反射率等于或小于最大反射率时,得出残留金属膜不存在的结论。 使用简单的计算来检查多层电介质膜上残留金属膜的存在或不存在,而不需要金属的光学常数。

    Three-dimensional detecting method and three-dimensional detecting
apparatus
    10.
    发明授权
    Three-dimensional detecting method and three-dimensional detecting apparatus 失效
    三维检测方法和三维检测装置

    公开(公告)号:US5841894A

    公开(公告)日:1998-11-24

    申请号:US730230

    申请日:1996-10-15

    申请人: Masahiro Horie

    发明人: Masahiro Horie

    CPC分类号: G01B11/24

    摘要: With three-dimensional detecting method and a three-dimensional detecting apparatus, it is possible to accurately detect a surface shape of a sample. While moving a sample, confocal images Fj (where j=1, 2, . . . , n) are taken at a plurality of heights which are different from each other in the direction of height. Based on the confocal images Fj, surface height data H(x, y) with which the quantity of light becomes maximum in the height direction are calculated on each pixel (x, y), and further, a maximum light quantity I(x, y) with the surface height data H(x, y) are calculated. For each pixel, the surface height data H(x, y) of a pixel under noise processing (x, y) are corrected based on surface height data H(a, b) and a maximum light quantity I(a, b) at peripheral pixels which surround the pixel under noise processing (x, y).

    摘要翻译: 利用三维检测方法和三维检测装置,可以准确地检测样品的表面形状。 在移动样本的同时,在高度方向上彼此不同的多个高度拍摄共焦图像Fj(其中j = 1,2,...,n)。 基于共焦图像Fj,对每个像素(x,y)计算出光量在高度方向上变得最大的表面高度数据H(x,y),此外,最大光量I(x, y)与表面高度数据H(x,y)的关系。 对于每个像素,根据表面高度数据H(a,b)和最大光量I(a,b),校正噪声处理(x,y)下的像素的表面高度数据H(x,y) 在噪声处理(x,y)周围围绕像素的外围像素。