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214 条记录 (耗时 0.035 秒)

    Device for forming a deposited film
    1.
    发明授权
    Device for forming a deposited film 失效
    用于形成沉积膜的装置

    公开(公告)号：US5391232A

    公开(公告)日：1995-02-21

    申请号：US73976

    申请日：1993-06-08

    申请人： Masahiro Kanai ,  Masaaki Hirooka ,  Junichi Hanna ,  Isamu Shimizu ,  Eiji Takeuchi

    发明人： Masahiro Kanai ,  Masaaki Hirooka ,  Junichi Hanna ,  Isamu Shimizu ,  Eiji Takeuchi

    IPC分类号： C23C16/44 ,  C23C16/455 ,  H01L31/20 ,  C23C16/00

    CPC分类号： C23C16/45568 ,  C23C16/455 ,  C23C16/45561 ,  C23C16/45576 ,  H01L31/202 ,  Y02E10/50

    摘要： There is described a device for forming a deposited film on a substrate in a vacuum chamber through utilization of reaction between a gasifiable starting material for formation of a deposited film and a gaseous halogenic oxidizing agent having the property of oxidization action for the gasifiable starting material which has a gas introducing means comprising a pipe for introducing said gasifiable starting material and a pipe for introducing said gaseous halogenic oxidizing agent where the pipes are arranged in a multi-concentric structure and at least one of the pipes except the outermost pipe is constituted of a porous pipe or has a hole opened through the wall thereof and the outermost pipe has at least one opening oriented toward the substrate.

    摘要翻译： 描述了通过利用用于形成沉积膜的可气化起始材料与具有可气化起始材料的氧化作用性质的气态卤素氧化剂之间的反应在真空室中在基板上形成沉积膜的装置， 具有气体引入装置，包括用于引入所述可气化起始材料的管道和用于引入所述气态卤素氧化剂的管道，其中所述管道以多中心结构布置，并且除了最外管道之外的至少一个管道由 多孔管或具有穿过其壁开口的孔，并且最外管具有朝向基板的至少一个开口。

    Method for forming deposited films of group II-VI compounds
    2.
    发明授权
    Method for forming deposited films of group II-VI compounds 失效
    形成II-VI族化合物沉积膜的方法

    公开(公告)号：US4869931A

    公开(公告)日：1989-09-26

    申请号：US298219

    申请日：1989-01-17

    申请人： Masaaki Hirooka ,  Masahiro Kanai ,  Jun-Ichi Hanna ,  Isamu Shimizu

    发明人： Masaaki Hirooka ,  Masahiro Kanai ,  Jun-Ichi Hanna ,  Isamu Shimizu

    IPC分类号： H01L31/04 ,  C23C16/30 ,  C23C16/44 ,  C23C16/452 ,  H01L21/205 ,  H01L31/18

    CPC分类号： H01L31/1828 ,  Y02E10/543

    摘要： A method for forming a deposited film, which comprises introducing a gaseous starting material containing an element in the Group II of the periodic table, a starting material containing an element in the Group VI of the periodic table which are gasifiable for formation of a deposited film, and a gaseous halogenic oxidizing agent having the property of oxidation action on said starting materials into a reaction space to effect contact therebetween to thereby chemically form a plural number of precursors containing precursors under excited state, and forming a deposited film on a substrate existing in a film-forming space by the use of at least one precursor of said precursors as the feeding source for the constituent element of the deposited film.

    摘要翻译： 一种形成沉积膜的方法，其包括在周期表II族中引入含有元素的气态原料，该原料含有周期表第VI族元素，其可气化以形成沉积膜 和对所述原料具有氧化作用的气态卤素氧化剂进入反应空间以进行接触，从而在激发态下化学形成含有前体的多种前体，并在存在于 通过使用所述前体的至少一种前体作为沉积膜的构成元素的进料源的成膜空间。

    Method for forming thin film multi-layer structure member
    3.
    发明授权
    Method for forming thin film multi-layer structure member 失效
    薄膜多层结构件形成方法

    公开(公告)号：US4868014A

    公开(公告)日：1989-09-19

    申请号：US3054

    申请日：1987-01-13

    申请人： Masahiro Kanai ,  Masaaki Hirooka ,  Jun-Ichi Hanna ,  Isamu Shimizu

    发明人： Masahiro Kanai ,  Masaaki Hirooka ,  Jun-Ichi Hanna ,  Isamu Shimizu

    IPC分类号： C23C16/452 ,  G03G5/082 ,  H01L21/205 ,  H01L21/336 ,  H01L31/20

    CPC分类号： H01L29/66757 ,  C23C16/452 ,  G03G5/08235 ,  H01L21/02425 ,  H01L21/0245 ,  H01L21/02505 ,  H01L21/02532 ,  H01L21/02579 ,  H01L21/0262 ,  H01L31/202 ,  H01L31/204 ,  Y02E10/50

    摘要： A method for forming a thin film multi-layer structure member having at least one of at least one kind of a semiconductor thin film controlled in valence electron and a semiconductor thin film regulated in band gap comprises the step of forming at least one layer of the semiconductor thin films on a substrate by energizing a heat-generating member constituted of either a single substance or an alloy of a transition metal element having the catalystic effect provided in a film forming space to effect heat generation, bringing a starting material (A) for deposited film formation containing at least one element of halogens and hydrogen in the molecule and a compound (B) containing an element which becomes at least one of the valence electron controller and the band gap regulator into contact with the heat-generating member under heat generating state to cause a thermal dissociation reaction to effect activation, thereby forming a precursor (X) which becomes the starting material for deposited film formation and using the precursor (X) as the feeding source for the constituent element of the thin film, and the step of forming at least one layer of other thin films by introducing a gaseous starting material (a) for deposited film formation and a gaseous halogenic oxidizing agent having the property of oxidation action for the starting material (a) into a reaction space to effect contact therebetween to thereby form chemically a plural number of precursors including precursors under excited state and using at least one precursor of the precursors as the feeding source for the constituent element of the deposited film.

    摘要翻译： 一种用于形成薄膜多层结构构件的方法，所述薄膜多层结构构件具有至少一种受限于价电子的半导体薄膜和在带隙中调节的半导体薄膜中的至少一种，包括形成至少一层 半导体薄膜通过对由成膜空间中具有催化作用的过渡金属元素的单一物质或合金构成的发热元件进行加热而产生发热，使起始材料（A）为 在分子中含有卤素和氢的至少一种元素的沉积膜形成物和含有成为价电子控制器和带隙调节剂中的至少一种的元素的化合物（B），其在发热下与发热元件接触 导致热解离反应进行活化，从而形成成为沉淀的起始原料的前体（X） 并且使用前体（X）作为薄膜的构成元素的供给源，以及通过引入用于沉积膜形成的气态原料（a）形成至少一层其它薄膜的步骤，以及 具有起始材料（a）的氧化作用的气态卤素氧化剂进入反应空间以实现其间的接触，由此在激发态下化学形成包含前体的多种前体，并使用至少一种前体前体作为 用于沉积膜的构成元件的馈送源。

    Device for forming deposited film
    4.
    发明授权
    Device for forming deposited film 失效
    用于形成沉积膜的装置

    公开(公告)号：US5482557A

    公开(公告)日：1996-01-09

    申请号：US305285

    申请日：1994-09-14

    申请人： Masahiro Kanai ,  Masaaki Hirooka ,  Jun-ichi Hanna ,  Isamu Shimizu ,  Keishi Saitoh

    发明人： Masahiro Kanai ,  Masaaki Hirooka ,  Jun-ichi Hanna ,  Isamu Shimizu ,  Keishi Saitoh

    IPC分类号： C23C16/40 ,  C23C16/44 ,  C23C16/455 ,  C23C16/54 ,  G03G5/08 ,  C23C16/00

    CPC分类号： C23C16/45563 ,  C23C16/402 ,  C23C16/455 ,  C23C16/54 ,  G03G5/08

    摘要： There is disclosed a device for forming a deposited film which forms a deposited film by bringing a gaseous starting material for formation of a deposited film into contact with a gaseous oxidizing agent having the property of oxidation action on said starting material, thereby causing a chemical reaction to occur, comprising a plural number of chambers for formation of a deposited film connected to one another, said chamber having a gas releasing means having an orifice for releasing said gaseous starting material and an orifice for releasing said gaseous oxidizing agent provided respectively on both wall surfaces opposed to each other, and a support setting means which is arranged so that at least a part of its constitution may be included within the plane formed by linking mutually the gas releasing means on the both wall surfaces.

    摘要翻译： 公开了一种用于形成沉积膜的装置，其通过使用于形成沉积膜的气态原料与在所述原料上具有氧化作用的气态氧化剂接触形成沉积膜，从而引起化学反应 包括多个用于形成彼此连接的沉积膜的室，所述室具有气体释放装置，其具有用于释放所述气态原料的孔口和用于释放分别设置在两壁上的气态氧化剂的孔口 彼此相对的表面以及支撑设定装置，其布置成使得其结构的至少一部分可以包括在通过两个壁表面上的气体释放装置相互连接形成的平面内。

    Method for producing an electronic device having a multi-layer structure
    5.
    发明授权
    Method for producing an electronic device having a multi-layer structure 失效
    一种具有多层结构的电子装置的制造方法

    公开(公告)号：US4772570A

    公开(公告)日：1988-09-20

    申请号：US946206

    申请日：1986-12-24

    申请人： Masahiro Kanai ,  Masaaki Hirooka ,  Jun-Ichi Hanna ,  Isamu Shimizu

    发明人： Masahiro Kanai ,  Masaaki Hirooka ,  Jun-Ichi Hanna ,  Isamu Shimizu

    IPC分类号： H01L31/04 ,  C23C16/22 ,  C23C16/452 ,  H01L21/205 ,  H01L21/336 ,  H01L29/78 ,  H01L29/786 ,  H01L21/20

    CPC分类号： H01L21/0245 ,  C23C16/22 ,  C23C16/452 ,  H01L21/02422 ,  H01L21/02425 ,  H01L21/02505 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  Y10S438/935

    摘要： A method for producing an electronic device having a multi-layer structure comprising one or more valence electron controlled semiconductor thin layers formed on a substrate comprises forming at least one of said valence electron controlled semiconductor thin layers controlled according to the plasma CVD method and forming at least one of the other constituent layers according to the method comprising introducing a gaseous starting material for formation of a deposited film and a gaseous halogenic oxidizing agent having the property of oxidizing said starting material into a reaction space to effect chemical contact therebetween to thereby form a plurality of precursors including a precursor in an excited state and transferring at least one of these precursors into a film forming space communicated with the reaction space as a feed source for the constituent element of the deposited film.

    摘要翻译： 一种具有多层结构的电子器件的制造方法，该多层结构包括在基片上形成的一个或多个价电子受控半导体薄层，包括：根据等离子体CVD法控制的至少一个所述价电子受控半导体薄层， 根据包括引入用于形成沉积膜的气态原料和具有将所述起始材料氧化成反应空间的气态卤素氧化剂的方法，至少一个其它构成层之间形成化学接触，由此形成 多个前体，其包括处于激发态的前体，并将这些前体中的至少一种转移到与反应空间连通的成膜空间中，作为沉积膜的构成元素的进料源。

    Device for forming a deposited film
    6.
    发明授权
    Device for forming a deposited film 失效
    用于形成沉积膜的装置

    公开(公告)号：US5366554A

    公开(公告)日：1994-11-22

    申请号：US104497

    申请日：1993-08-10

    申请人： Masahiro Kanai ,  Masaaki Hirooka ,  Jun-Ichi Hanna ,  Isamu Shimizu

    发明人： Masahiro Kanai ,  Masaaki Hirooka ,  Jun-Ichi Hanna ,  Isamu Shimizu

    IPC分类号： C23C16/40 ,  C23C16/44 ,  C23C16/455 ,  C23C16/54 ,  G03G5/08 ,  C23C16/00

    CPC分类号： C23C16/45563 ,  C23C16/402 ,  C23C16/455 ,  C23C16/54 ,  G03G5/08

    摘要： There is disclosed a device for forming a deposited film which forms a deposited film by bringing a gaseous starting material for formation of a deposited film into contact with a gaseous oxidizing agent having the property of oxidation action on said starting material, thereby causing a chemical reaction to occur, comprising a plural number of chambers for formation of a deposited film connected to one another, said chamber having a gas releasing means having an orifice for releasing said gaseous starting material and an orifice for releasing said gaseous oxidizing agent provided respectively on both wall surfaces opposed to each other, and a support setting means which is arranged so that at least a part of its constitution may be included within the plane formed by linking mutually the gas releasing means on the both wall surfaces.

    摘要翻译： 公开了一种用于形成沉积膜的装置，其通过使用于形成沉积膜的气态原料与在所述原料上具有氧化作用的气态氧化剂接触形成沉积膜，从而引起化学反应 包括多个用于形成彼此连接的沉积膜的室，所述室具有气体释放装置，其具有用于释放所述气态原料的孔口和用于释放分别设置在两壁上的气态氧化剂的孔口 彼此相对的表面以及支撑设定装置，其布置成使得其结构的至少一部分可以包括在通过两个壁表面上的气体释放装置相互连接形成的平面内。

    Process for forming deposited film
    9.
    发明授权
    Process for forming deposited film 失效
    沉积膜形成工艺

    公开(公告)号：US4778692A

    公开(公告)日：1988-10-18

    申请号：US831460

    申请日：1986-02-20

    申请人： Shunichi Ishihara ,  Shigeru Ohno ,  Masahiro Kanai ,  Shunri Oda ,  Isamu Shimizu

    发明人： Shunichi Ishihara ,  Shigeru Ohno ,  Masahiro Kanai ,  Shunri Oda ,  Isamu Shimizu

    IPC分类号： H01L21/205 ,  B05D3/06

    CPC分类号： H01L21/0237 ,  H01L21/02422 ,  H01L21/02425 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262

    摘要： A process for forming a deposited film, which comprises introducing into a film forming space for formation of a deposited film on a substrate an active species (A) formed by decomposition of a compound containing silicon and a halogen and an active species (B) formed from a germanium containing compound for film formation which is chemically mutually reactive with said active species (A) separately from each other, and then permitting the above respective active species and said germanium containing compounds to react chemically with each other by excitation by irradiation of light energy thereby to form a deposited film on the above substrate.

    摘要翻译： 一种用于形成沉积膜的方法，其包括在基底上引入用于在基底上形成沉积膜的成膜空间中通过分解含有硅和卤素的化合物和形成的活性物质（B）而形成的活性物质（A） 从用于成膜的含锗化合物与所述活性物质（A）彼此分开地化学相互反应，然后允许上述各种活性物质和所述含锗化合物通过光照射激发而彼此化学反应 从而在上述基板上形成沉积膜。