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公开(公告)号：US07081641B2
公开(公告)日：2006-07-25
申请号：US10786097
申请日：2004-02-26
申请人： Masahiro Kawasaki , Shuji Imazeki , Masahiko Ando
发明人： Masahiro Kawasaki , Shuji Imazeki , Masahiko Ando
IPC分类号： H01L29/08
CPC分类号： H01L51/0545 , H01L51/0021 , H01L51/0037 , H01L51/0052 , H01L51/0516
摘要： An object of the present invention is to provide a semiconductor device such as a display device, ID tag, sensor or the like at low cost by using a bottom contact type organic TFT as a switching element. In the present invention, the semiconductor layer of the bottom contact type organic TFT is formed of a polycrystalline material, and the taper width of each of the source and drain electrodes of the TFT in the direction of the channel length is smaller than the average particle size of semiconductor crystals grown on the source and drain electrodes. Alternatively, the side on the channel side of each of the source and drain electrodes of the bottom contact type organic TFT is formed so as to be convex upward with respect to the substrate surface. Alternatively, an organic compound layer different from the semiconductor layer of the bottom contact type organic TFT is made present between each of the source and drain electrodes of the bottom contact type organic TFT and said semiconductor layer, in a thickness of not more than 10 Å and not less than 1 Å.
摘要翻译： 本发明的目的是通过使用底接触型有机TFT作为开关元件，以低成本提供诸如显示装置，ID标签，传感器等的半导体器件。 在本发明中，底部接触型有机TFT的半导体层由多晶材料形成，TFT的源极和漏极的沟道长度方向的锥形宽度小于平均粒子 在源极和漏极上生长的半导体晶体的尺寸。 或者，底接触型有机TFT的源电极和漏电极的沟道侧的一侧形成为相对于衬底表面向上凸起。 或者，在底接触型有机TFT和所述半导体层的每个源电极和漏电极之间存在不同于底接触型有机TFT的半导体层的有机化合物层，其厚度不大于 并且不小于1。
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公开(公告)号：US20080036698A1
公开(公告)日：2008-02-14
申请号：US11834736
申请日：2007-08-07
申请人： Masahiro Kawasaki , Masahiko Ando , Takeo Shiba , Shuji Imazeki , Masaaki Fujimori , Hideyuki Matsuoka
发明人： Masahiro Kawasaki , Masahiko Ando , Takeo Shiba , Shuji Imazeki , Masaaki Fujimori , Hideyuki Matsuoka
IPC分类号： G09G3/20
CPC分类号： G02F1/1368 , G09G3/20 , G09G2300/04 , H01L27/124 , H01L27/1292
摘要： A display arranged with, in a matrix way, signal lines for providing brightness information to each of pixels, and scanning lines for selecting, in a predetermined cycle, pixels to be provided with brightness information; intake of the brightness information to each of the pixels being executed by intake of signal voltage of the signal lines via thin-film transistors in each of said pixels, in selecting the scanning lines connected with each of the pixels; and having pixels of n-lines and m-rows, by which the brightness information taken into each of the pixels is retained by capacity thereof, even after the scanning lines connected with each of the pixels become a non-selection state, wherein each of the pixels of each line is provided with at least one semiconductor layer that is common between each of the pixels, and the semiconductor layer is formed in parallel to said signal lines.
摘要翻译： 以矩阵方式布置用于向每个像素提供亮度信息的信号线和用于在预定周期中选择要提供亮度信息的像素的扫描线的显示器; 在选择与每个像素连接的扫描线时，通过每个所述像素中的薄膜晶体管吸收信号线的信号电压来执行每个像素的亮度信息的摄取; 并且即使在与每个像素连接的扫描线变为非选择状态之后，具有n行和m行的像素，由此通过其像素保留每个像素中的亮度信息， 每行的像素设置有至少一个在每个像素之间共有的半导体层，并且半导体层与所述信号线并联形成。
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公开(公告)号：US20070058101A1
公开(公告)日：2007-03-15
申请号：US11510561
申请日：2006-08-28
申请人： Masahiro Kawasaki , Takeo Shiba , Shuji Imazeki , Masahiko Ando
发明人： Masahiro Kawasaki , Takeo Shiba , Shuji Imazeki , Masahiko Ando
IPC分类号： G02F1/136 , G02F1/1337
CPC分类号： G02F1/1368 , G02F1/133723 , G02F1/133784 , G02F2202/02
摘要： It is an object of the present invention to prevent degradation of an organic semiconductor film caused in forming an alignment layer and to inexpensively provide a liquid crystal display device with a high-performance organic thin film transistor. According to the invention, in a liquid crystal display device that includes: a thin film transistor substrate having such members as a thin film transistor composed of a gate electrode, a gate insulating film, source/drain electrodes, and a semiconductor layer, a line, and a pixel electrode; and an opposing substrate supporting a liquid crystal layer between the thin film transistor substrate and the opposing substrate, no alignment layer having a function of controlling alignment of molecules in the liquid crystal layer is interposed between the semiconductor layer and the liquid crystal layer.
摘要翻译： 本发明的目的是防止在形成取向层时引起的有机半导体膜的劣化，并且廉价地提供具有高性能有机薄膜晶体管的液晶显示装置。 根据本发明，在液晶显示装置中，包括：薄膜晶体管基板，其具有由栅电极，栅绝缘膜，源/漏电极和半导体层组成的薄膜晶体管的构件，线 ，和像素电极; 以及在薄膜晶体管基板和对置基板之间支撑液晶层的相对基板，在半导体层和液晶层之间插入不具有控制液晶层中的分子取向功能的取向层。
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公开(公告)号：US20050211975A1
公开(公告)日：2005-09-29
申请号：US11057835
申请日：2005-02-15
IPC分类号： G02F1/1368 , G09F9/30 , H01L21/84 , H01L27/00 , H01L29/786 , H01L51/00 , H01L51/05 , H01L51/30 , H01L51/50 , H05B33/14
CPC分类号： H01L51/107 , H01L51/0541 , H01L51/0545
摘要： The present invention aims at providing a high-performance semiconductor device such as display, IC tag, sensor or the like at a low cost by using an organic thin film transistor most members of which can be formed by printing, as a switching element. The present invention relates to a thin film transistor composed of members on a dielectric substrate, which are a gate electrode, a dielectric film, source/drain electrodes, and a semiconductor layer, wherein on said semiconductor layer there are formed at least two passivation films of a first passivation film capping said semiconductor layer to protect it and a second passivation film covering larger area than that of said first passivation film to protect all of said members.
摘要翻译： 本发明旨在通过使用其可以通过印刷形成的大多数成分的有机薄膜晶体作为开关元件，以低成本提供诸如显示器，IC标签，传感器等的高性能半导体器件。 本发明涉及一种薄膜晶体管，它由电介质基片上的构成栅电极，电介质膜，源/漏电极和半导体层构成，其中在所述半导体层上形成至少两个钝化膜 覆盖所述半导体层以保护其的第一钝化膜和覆盖比所述第一钝化膜的面积更大的区域的第二钝化膜以保护所有所述构件。
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公开(公告)号：US20050056897A1
公开(公告)日：2005-03-17
申请号：US10786097
申请日：2004-02-26
申请人： Masahiro Kawasaki , Shuji Imazeki , Masahiko Ando
发明人： Masahiro Kawasaki , Shuji Imazeki , Masahiko Ando
IPC分类号： H01L51/05 , H01L23/62 , H01L29/786 , H01L51/00 , H01L51/30
CPC分类号： H01L51/0545 , H01L51/0021 , H01L51/0037 , H01L51/0052 , H01L51/0516
摘要： An object of the present invention is to provide a semiconductor device such as a display device, ID tag, sensor or the like at low cost by using a bottom contact type organic TFT as a switching element. In the present invention, the semiconductor layer of the bottom contact type organic TFT is formed of a polycrystalline material, and the taper width of each of the source and drain electrodes of the TFT in the direction of the channel length is smaller than the average particle size of semiconductor crystals grown on the source and drain electrodes. Alternatively, the side on the channel side of each of the source and drain electrodes of the bottom contact type organic TFT is formed so as to be convex upward with respect to the substrate surface. Alternatively, an organic compound layer different from the semiconductor layer of the bottom contact type organic TFT is made present between each of the source and drain electrodes of the bottom contact type organic TFT and said semiconductor layer, in a thickness of not more than 10 Å and not less than 1 Å.
摘要翻译： 本发明的目的是通过使用底接触型有机TFT作为开关元件，以低成本提供诸如显示装置，ID标签，传感器等的半导体器件。 在本发明中，底部接触型有机TFT的半导体层由多晶材料形成，TFT的源极和漏极的沟道长度方向的锥形宽度小于平均粒子 在源极和漏极上生长的半导体晶体的尺寸。 或者，底接触型有机TFT的源电极和漏电极的沟道侧的一侧形成为相对于衬底表面向上凸起。 或者，在底接触型有机TFT和所述半导体层的每个源电极和漏电极之间存在不同于底接触型有机TFT的半导体层的有机化合物层，其厚度不大于 并且不小于1。
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公开(公告)号：US08013327B2
公开(公告)日：2011-09-06
申请号：US12385937
申请日：2009-04-24
CPC分类号： H01L51/0541 , H01L51/0023 , H01L51/055
摘要： A thin-film transistor includes an insulating substrate, a source electrode, and a drain electrode, disposed over the top of the insulating substrate, a semiconductor layer electrically continuous with the source electrode, and the drain electrode, respectively, a gate dielectric film formed over the top of at least the semiconductor layer; and a gate electrode disposed over the top of the gate dielectric film so as to overlap the semiconductor layer. Further, a first bank insulator is formed so as to overlie the source electrode, a second bank insulator is formed so as to overlie the drain electrode, and the semiconductor layer, the gate dielectric film, and the gate electrode are embedded in a region between the first bank insulator, and the second bank insulator.
摘要翻译： 薄膜晶体管包括绝缘基板，源电极和漏电极，设置在绝缘基板的顶部上，分别与源极电连接的半导体层和漏极电极形成的栅极电介质膜 至少在半导体层的顶部; 以及设置在栅极电介质膜的顶部上以与半导体层重叠的栅电极。 此外，形成第一堤绝缘体以覆盖源电极，形成第二堤绝缘体以覆盖漏电极，并且半导体层，栅极电介质膜和栅极电极嵌入在 第一银行绝缘子和第二银行绝缘子。
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公开(公告)号：US20090294852A1
公开(公告)日：2009-12-03
申请号：US12385937
申请日：2009-04-24
IPC分类号： H01L29/786
CPC分类号： H01L51/0541 , H01L51/0023 , H01L51/055
摘要： A thin-film transistor includes an insulating substrate, a source electrode, and a drain electrode, disposed over the top of the insulating substrate, a semiconductor layer electrically continuous with the source electrode, and the drain electrode, respectively, a gate dielectric film formed over the top of at least the semiconductor layer; and a gate electrode disposed over the top of the gate dielectric film so as to overlap the semiconductor layer. Further, a first bank insulator is formed so as to overlie the source electrode, a second bank insulator is formed so as to overlie the drain electrode, and the semiconductor layer, the gate dielectric film, and the gate electrode are embedded in a region between the first bank insulator, and the second bank insulator.
摘要翻译： 薄膜晶体管包括绝缘基板，源电极和漏电极，设置在绝缘基板的顶部上，分别与源极电连接的半导体层和漏极电极形成的栅极电介质膜 至少在半导体层的顶部; 以及设置在栅极电介质膜的顶部上以与半导体层重叠的栅电极。 此外，形成第一堤绝缘体以覆盖源电极，形成第二堤绝缘体以覆盖漏电极，并且半导体层，栅极电介质膜和栅极电极嵌入在 第一银行绝缘子和第二银行绝缘子。
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公开(公告)号：US07145176B2
公开(公告)日：2006-12-05
申请号：US09940885
申请日：2001-08-29
CPC分类号： H01L29/78696 , G02F1/1368 , G02F2001/133357 , G02F2202/104 , H01L29/66765 , H01L29/66772 , H01L29/78654 , H01L29/78675
摘要： An active matrix display device using a thin film transistor as a switching element in the displaying portion or driving portion is characterized in that said thin film transistor includes an insulating substrate on which a gate electrode, a gate insulating film, a semiconductor layer, a drain electrode, a source electrode and a passivation film are successively laminated. The thin film transistor is further characterized such that the surface portion of the semiconductor layer on the side of the passivation film is porous, which enables the device to be stably driven with a low off-current even in the case of disposing an organic passivation film and a picture element electrode on the thin film transistor.
摘要翻译： 在显示部分或驱动部分中使用薄膜晶体管作为开关元件的有源矩阵显示装置的特征在于，所述薄膜晶体管包括绝缘基板，栅电极，栅极绝缘膜，半导体层，漏极 电极，源电极和钝化膜。 薄膜晶体管的特征还在于，钝化膜侧的半导体层的表面部分是多孔的，即使在设置有机钝化膜的情况下也能够以低的截止电流稳定地驱动该器件 和薄膜晶体管上的像素电极。
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公开(公告)号：US07112500B2
公开(公告)日：2006-09-26
申请号：US09902170
申请日：2001-07-11
IPC分类号： H01L21/331
CPC分类号： H01L29/78669 , H01L29/66765 , H01L29/78618
摘要： The present invention provides a thin film transistor comprising a drain electrode and a source electrode separated by a channel region formed over a contact portion with an amorphous silicon layer and wherein an impurity from the channel region is removed and a remaining impurity is diffused into the contact portion to form a contact layer wherein the contact layer has a second resistance at least lower than the first resistance.
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10.发明授权Thin film transistor device, image display device and manufacturing method thereof 有权薄膜晶体管器件，图像显示器件及其制造方法公开(公告)号：US07868323B2
公开(公告)日：2011-01-11
申请号：US11953065
申请日：2007-12-09
CPC分类号： H01L27/286 , G02F1/13454 , G09G3/3225 , G09G2300/0426 , G09G2380/02 , H01L27/283 , H01L27/3274 , H01L27/3276 , H01L51/0545 , H01L2251/5338
摘要： In an image display device comprising a display part configured with a plurality of pixels and a peripheral integrated circuit which controls the display part, the display device is provided on a support substrate which has high durability for the impact and the bending, the pixel circuit is configured with an organic semiconductor TFT, the peripheral integrated circuit is configured with a low-temperature poly Si-TFT, this peripheral integrated circuit is provided on a support substrate of the display device being removed the support substrate when being manufactured, and the pixel circuit and the peripheral integrated circuit are connected with the same wire layer.
摘要翻译： 在包括配置有多个像素的显示部分和控制显示部分的外围集成电路的图像显示装置中，显示装置设置在对冲击和弯曲具有高耐久性的支撑基板上，像素电路为 配置有机半导体TFT的外围集成电路配置有低温多晶硅TFT，该外围集成电路设置在显示装置的支撑基板上，在制造时取出支撑基板，像素电路 并且外围集成电路与相同的导线层连接。
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