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    Electrically erasable programmable read-only memory with NAND cellstructure
    1.
    发明授权
    Electrically erasable programmable read-only memory with NAND cellstructure 失效
    具有NAND单元结构的电可擦除可编程只读存储器

    公开(公告)号：US5050125A

    公开(公告)日：1991-09-17

    申请号：US272404

    申请日：1988-11-17

    申请人： Masaki Momodomi ,  Koichi Toita ,  Yasuo Itoh ,  Yoshihisa Iwata ,  Fujio Masuoka ,  Masahiko Chiba ,  Tetsuo Endo ,  Riichiro Shirota ,  Ryouhei Kirisawa

    发明人： Masaki Momodomi ,  Koichi Toita ,  Yasuo Itoh ,  Yoshihisa Iwata ,  Fujio Masuoka ,  Masahiko Chiba ,  Tetsuo Endo ,  Riichiro Shirota ,  Ryouhei Kirisawa

    IPC分类号： G11C16/04 ,  G11C16/08 ,  G11C16/30 ,  H01L27/115

    CPC分类号： H01L27/115 ,  G11C16/0483 ,  G11C16/08 ,  G11C16/30

    摘要： An erasable programmable read-only memory with a NAND cell structure including NAND cell blocks, each of which has a selection transistor connected to the corresponding bit line and memory cell transistors connected is series. Word lines are connected to control gates of the cell transistors. In a data write mode, a selection transistor of a certain cell block containing a selected cell is rendered conductive to connect the cell block to the corresponding bit line. A control circuit is provided for applying an "L" Level voltage (approximately O V) to a word line connected to the selected cell, applying an "H" level voltage (approximately 20 V) to a word line or word lines positioned between the selected word line and a contact node connecting the cell block and a specific bit line associated therewith, applying a voltage corresponding to data to be written to the specific bit line, and applying an intermediate voltage between the "H" and "L" level voltages to non-selected bit lines, thereby writing the data in the selected cell by tunneling. If the data is logic "0" data, the intermediate voltage is applied also to the specific bit line.

    摘要翻译： 具有包括NAND单元块的NAND单元结构的可擦除可编程只读存储器，每个NAND单元块具有连接到相应位线的选择晶体管和连接的存储单元晶体管。 字线连接到单元晶体管的控制栅极。 在数据写入模式中，包含所选择的单元的某个单元块的选择晶体管被导通以将单元块连接到对应的位线。 提供控制电路，用于向连接到所选择的单元的字线施加“L”电平电压（大约为0V），对位于所选择的单元之间的字线或字线施加“H”电平电压（大约20V） 字线和连接单元块和与其相关联的特定位线的接触节点，施加与要写入特定位线的数据相对应的电压，以及将“H”和“L”电平电压之间的中间电压施加到 未选择的位线，从而通过隧道将数据写入所选择的单元。 如果数据是逻辑“0”数据，则中间电压也被施加到特定位线。

    Electrically erasable programmable read-only memory with NAND cell structure and intermediate level voltages initially applied to bit lines
    2.
    发明授权
    Electrically erasable programmable read-only memory with NAND cell structure and intermediate level voltages initially applied to bit lines 失效
    电可擦除可编程只读存储器，NAND单元结构和中间电平电压最初应用于位线

    公开(公告)号：US5440509A

    公开(公告)日：1995-08-08

    申请号：US22392

    申请日：1993-02-24

    申请人： Masaki Momodomi ,  Koichi Toita ,  Yasuo Itoh ,  Yoshihisa Iwata ,  Fujio Masuoka ,  Masahiko Chiba ,  Tetsuo Endo ,  Riichiro Shirota ,  Ryouhei Kirisawa

    发明人： Masaki Momodomi ,  Koichi Toita ,  Yasuo Itoh ,  Yoshihisa Iwata ,  Fujio Masuoka ,  Masahiko Chiba ,  Tetsuo Endo ,  Riichiro Shirota ,  Ryouhei Kirisawa

    IPC分类号： G11C17/00 ,  G11C16/02 ,  G11C16/04 ,  G11C16/06 ,  G11C16/08 ,  G11C16/30 ,  H01L27/115

    CPC分类号： G11C16/0483 ,  G11C16/08 ,  G11C16/30 ,  H01L27/115

    摘要： An erasable programmable read-only memory (EPROM) with a NAND cell structure includes NAND cell blocks, each of which has a selection transistor connected to the corresponding bit line and memory cell transistors connected in series. Word lines are connected to control gates of the cell transistors. In a data write mode, a selection transistor of a certain cell block containing a selected cell is rendered conductive to connect the cell block to the corresponding bit line. A control circuit is provided for applying an "L" level voltage (approximately 0 V) to a word line connected to the selected cell, applying an "H" level voltage (approximately 20 V) to a word line or word lines positioned between the selected word line and a contact node connecting the cell block and a specific bit line associated therewith, applying a voltage corresponding to data to be written to the specific bit line, and applying an intermediate voltage between the "H" and "L" level voltages to non-selected bit lines, thereby writing the data in the selected cell by tunneling. If the data is logic "0" data, the intermediate voltage is applied also to the specific bit line.

    摘要翻译： 具有NAND单元结构的可擦除可编程只读存储器（EPROM）包括NAND单元块，每个单元块具有连接到相应位线的选择晶体管和串联连接的存储单元晶体管。 字线连接到单元晶体管的控制栅极。 在数据写入模式中，包含所选择的单元的某个单元块的选择晶体管被导通以将单元块连接到对应的位线。 提供一种控制电路，用于向连接到所选择的单元的字线施加“L”电平电压（大约0V），对位于第一个单元之间的字线或字线施加“H”电平电压（大约20V） 选择字线和连接单元块和与其相关联的特定位线的接触节点，施加与要写入到特定位线的数据相对应的电压，以及在“H”和“L”电平电压之间施加中间电压 到未选择的位线，从而通过隧道将数据写入所选择的单元。 如果数据是逻辑“0”数据，则中间电压也被施加到特定位线。

    Non-volatile semiconductor memory with NAND cell structure and switching transistors with different channel lengths to reduce punch-through
    3.
    发明授权
    Non-volatile semiconductor memory with NAND cell structure and switching transistors with different channel lengths to reduce punch-through 失效
    具有NAND单元结构的非易失性半导体存储器和具有不同通道长度的开关晶体管以减少穿通

    公开(公告)号：US5508957A

    公开(公告)日：1996-04-16

    申请号：US312072

    申请日：1994-09-26

    申请人： Masaki Momodomi ,  Fujio Masuoka ,  Yasuo Itoh ,  Hiroshi Iwahashi ,  Yoshihisa Iwata ,  Masahiko Chiba ,  Satoshi Inoue ,  Riichiro Shirota ,  Ryozo Nakayama ,  Kazunori Ohuchi ,  Shigeyoshi Watanabe ,  Ryouhei Kirisawa

    发明人： Masaki Momodomi ,  Fujio Masuoka ,  Yasuo Itoh ,  Hiroshi Iwahashi ,  Yoshihisa Iwata ,  Masahiko Chiba ,  Satoshi Inoue ,  Riichiro Shirota ,  Ryozo Nakayama ,  Kazunori Ohuchi ,  Shigeyoshi Watanabe ,  Ryouhei Kirisawa

    IPC分类号： G11C16/04 ,  G11C16/10 ,  G11C16/16 ,  G11C16/30 ,  H01L27/115 ,  G11C16/06 ,  H01L29/788

    CPC分类号： G11C16/30 ,  G11C16/0483 ,  G11C16/10 ,  G11C16/16 ,  H01L27/115

    摘要： An erasable programmable read-only memory with NAND cell structure includes NAND cell blocks, each of which has a selection transistor connected to the corresponding bit line and a series array of memory cell transistors, and a switching transistor connected between the series array of memory cell transistors and ground. Each cell transistor has a floating gate and a control gate. Word lines are connected to the control gates of the cell transistors. In a data writing mode, a selection transistor of a certain cell block containing a selected cell is rendered conductive, so that this cell block is connected to the corresponding bit line. Under such a condition, a decoder circuit stores a desired data (a logic "one" e.g.) in the selected cell, by applying an "H" level voltage to the bit line, applying an "L" level voltage to a word line connected to the selected cell, applying the "H" level voltage to a memory cell or cells positioned between the selected cell and the bit line, and applying the "L" level voltage to a memory cell or cells positioned between the selected cell and the ground. The selection transistor and switching transistor for a corresponding series array of memory cell transistors have different channel lengths to reduce punch through.

    摘要翻译： 具有NAND单元结构的可擦除可编程只读存储器包括NAND单元块，每个单元块具有连接到对应位线的选择晶体管和存储单元晶体管的串联阵列，以及连接在串联阵列存储单元之间的开关晶体管 晶体管和地。 每个单元晶体管具有浮置栅极和控制栅极。 字线连接到单元晶体管的控制栅极。 在数据写入模式中，包含所选择的单元的某个单元块的选择晶体管被导通，使得该单元块连接到对应的位线。 在这种情况下，解码器电路通过向位线施加“H”电平电压，将所需数据（例如逻辑“1”）存储在所选择的单元中，对连接的字线施加“L”电平电压 将“H”电平施加到位于所选择的单元和位线之间的存储单元或单元，并将“L”电平施加到位于所选单元和地之间的存储单元或单元 。 用于存储单元晶体管的相应串联阵列的选择晶体管和开关晶体管具有不同的沟道长度以减少穿通。

    Nonvolatile semiconductor memory device with NAND cell structure
    5.
    发明授权
    Nonvolatile semiconductor memory device with NAND cell structure 失效
    具有NAND单元结构的非易失性半导体存储器件

    公开(公告)号：US5400279A

    公开(公告)日：1995-03-21

    申请号：US67005

    申请日：1993-05-26

    申请人： Masaki Momodomi ,  Yasuo Itoh ,  Yoshihisa Iwata ,  Fujio Masuoka ,  Masahiko Chiba

    发明人： Masaki Momodomi ,  Yasuo Itoh ,  Yoshihisa Iwata ,  Fujio Masuoka ,  Masahiko Chiba

    IPC分类号： G11C17/00 ,  G11C16/02 ,  G11C16/04 ,  G11C16/08 ,  G11C16/24 ,  G11C16/26 ,  G11C16/32 ,  G11C7/00

    CPC分类号： G11C16/32 ,  G11C16/08 ,  G11C16/24 ,  G11C16/26

    摘要： An electrically erasable programmable read-only memory has an array of programmable memory cells connected to parallel bit lines on a semiconductive substrate. The memory cells include NAND cell blocks each of which has a first selection transistor coupled to a corresponding bit line, a second selection transistor coupled to the ground potential, and a series array of memory cell transistors each having a floating gate and a control gate. Word lines are respectively connected to the control gates of the memory cell transistors. In a data read mode, a selection transistor of a certain NAND cell block including a selected memory cell transistor is rendered conductive to connect this cell block to a bit line associated therewith. Under such a condition, a low or "L" level voltage is applied by a row decoder & bootstrap circuit section to a word line connected to the selected memory cell transistor, and a pulse voltage signal having a high or "H" level is supplied by the row decoder & bootstrap circuit section to the remaining word lines, so that data stored in the selected memory cell is read out. The "H" level of the voltage signal is higher than the power supply voltage and yet lower than a normal "H" level used in data write and erase modes. The pulse width of the pulse voltage signal is shorter than the period of one read cycle.

    摘要翻译： 电可擦除可编程只读存储器具有连接到半导体衬底上的并行位线的可编程存储器单元阵列。 存储器单元包括NAND单元块，每个NAND单元块具有耦合到对应位线的第一选择晶体管，耦合到地电位的第二选择晶体管，以及每个具有浮置栅极和控制栅极的存储单元晶体管的串联阵列。 字线分别连接到存储单元晶体管的控制栅极。 在数据读取模式中，将包括所选存储单元晶体管的某个NAND单元块的选择晶体管导通，以将该单元块连接到与其相关联的位线。 在这种情况下，由行解码器和自举电路部分将低电平或“L”电平施加到连接到所选择的存储单元晶体管的字线，并且提供具有高或“H”电平的脉冲电压信号 通过行解码器和引导电路部分到剩余的字线，使得读出存储在所选存储单元中的数据。 电压信号的“H”电平高于电源电压，但低于在数据写入和擦除模式下使用的正常“H”电平。 脉冲电压信号的脉冲宽度比一个读周期的周期短。

    Electrically erasable programmable read-only memory with electric field decreasing controller
    7.
    发明授权
    Electrically erasable programmable read-only memory with electric field decreasing controller 失效
    电可擦除可编程只读存储器，具有电场降低控制器

    公开(公告)号：US5293337A

    公开(公告)日：1994-03-08

    申请号：US683733

    申请日：1991-04-11

    申请人： Seiichi Aritome ,  Riichiro Shirota ,  Ryouhei Kirisawa ,  Yoshihisa Iwata ,  Masaki Momodomi

    发明人： Seiichi Aritome ,  Riichiro Shirota ,  Ryouhei Kirisawa ,  Yoshihisa Iwata ,  Masaki Momodomi

    IPC分类号： G11C17/00 ,  G11C16/02 ,  G11C16/04 ,  G11C16/16 ,  H01L21/8247 ,  H01L27/115 ,  H01L29/788 ,  H01L29/792 ,  G11C11/34

    CPC分类号： G11C16/16 ,  G11C16/0433 ,  G11C16/0483

    摘要： A NAND cell type EEPROM has bit lines, each of which is associated with a NAND cell unit including a series array of four memory cell transistors. Each transistor is a MOSFET with a control gate and a floating gate for data storage. The memory cell transistors are connected at their control gates to word lines, respectively. One end of the NAND cell unit is connected through a first select transistor to a corresponding bit line; the other end thereof is connected via a second select transistor to a source voltage. The memory cell transistors and the select transistors are arranged in a well region formed in a substrate. In an erase mode, the bit line voltage, the substrate voltage and the well voltage are held at a high voltage, whereas the word lines are at zero volts. The gate potential of the select transistors is held at the high voltage, whereby the internal electric field of these select transistors is weakened to improve the dielectric breakdown characteristic thereof.

    摘要翻译： NAND单元型EEPROM具有位线，其各自与包括四个存储单元晶体管的串联阵列的NAND单元单元相关联。 每个晶体管是具有控制栅极和用于数据存储的浮动栅极的MOSFET。 存储单元晶体管分别在其控制栅极处连接到字线。 NAND单元单元的一端通过第一选择晶体管连接到相应的位线; 其另一端经由第二选择晶体管连接到源极电压。 存储单元晶体管和选择晶体管布置在形成在衬底中的阱区中。 在擦除模式中，位线电压，衬底电压和阱电压保持在高电压，而字线为零伏。 选择晶体管的栅极电位被保持在高电压，由此这些选择晶体管的内部电场被削弱以改善其绝缘击穿特性。

    Electrically erasable programmable read-only memory with electric field decreasing controller
    8.
    发明授权
    Electrically erasable programmable read-only memory with electric field decreasing controller 失效
    电可擦除可编程只读存储器，具有电场降低控制器

    公开(公告)号：US5402373A

    公开(公告)日：1995-03-28

    申请号：US201036

    申请日：1994-02-24

    申请人： Seiichi Aritome ,  Riichiro Shirota ,  Ryouhei Kirisawa ,  Yoshihisa Iwata ,  Masaki Momodomi

    发明人： Seiichi Aritome ,  Riichiro Shirota ,  Ryouhei Kirisawa ,  Yoshihisa Iwata ,  Masaki Momodomi

    IPC分类号： G11C17/00 ,  G11C16/02 ,  G11C16/04 ,  G11C16/16 ,  H01L21/8247 ,  H01L27/115 ,  H01L29/788 ,  H01L29/792 ,  G11C11/34

    CPC分类号： G11C16/16 ,  G11C16/0433 ,  G11C16/0483

    摘要： A NAND cell type EEPROM has bit lines, each of which is associated with a NAND cell unit including a series array of four memory cell transistors. Each transistor is a MOSFET with a control gate and a floating gate for data storage. The memory cell transistors are connected at their control gates to word lines, respectively. One end of the NAND cell unit is connected through a first select transistor to a corresponding bit line; the other end thereof is connected via a second select transistor to a source voltage. The memory cell transistors and the select transistors are arranged in a well region formed in a substrate. In an erase mode, the bit line voltage, the substrate voltage and the well voltage are held at a high voltage, whereas the word lines are at zero volts. The gate potential of the select transistors is held at the high voltage, whereby the internal electric field of these select transistors is weakened to improve the dielectric breakdown characteristic thereof.

    摘要翻译： NAND单元型EEPROM具有位线，其各自与包括四个存储单元晶体管的串联阵列的NAND单元单元相关联。 每个晶体管是具有控制栅极和用于数据存储的浮动栅极的MOSFET。 存储单元晶体管分别在其控制栅极处连接到字线。 NAND单元单元的一端通过第一选择晶体管连接到相应的位线; 其另一端经由第二选择晶体管连接到源极电压。 存储单元晶体管和选择晶体管布置在形成在衬底中的阱区中。 在擦除模式中，位线电压，衬底电压和阱电压保持在高电压，而字线为零伏。 选择晶体管的栅极电位被保持在高电压，由此这些选择晶体管的内部电场被削弱以改善其绝缘击穿特性。