公开(公告)号：US08790489B2

公开(公告)日：2014-07-29

申请号：US13175096

申请日：2011-07-01

申请人： Masanobu Honda ,  Kazuhiro Kubota ,  Yoshinobu Ooya ,  Masaru Nishino

发明人： Masanobu Honda ,  Kazuhiro Kubota ,  Yoshinobu Ooya ,  Masaru Nishino

IPC分类号： C23C16/455 ,  C23F1/00 ,  H01L21/306 ,  H01L21/311 ,  H01J37/32 ,  H01L21/67 ,  H01J37/18 ,  C23C16/06 ,  C23C16/22

CPC分类号： H01L21/6719 ,  H01J37/18 ,  H01J37/32091 ,  H01J37/32633 ,  H01J37/32834 ,  H01L21/31116 ,  H01L21/31122 ,  H01L21/31138 ,  H01L21/31144

摘要： The substrate processing apparatus includes a process chamber which accommodates a wafer and performs a plasma etching process on the wafer, an exhaust chamber which communicates with the process chamber, an exhaust plate which divides the process chamber from the exhaust chamber and prevents plasma inside the process chamber from leaking into the exhaust chamber, and an upper electrode plate arranged inside the exhaust chamber, wherein the exhaust plate includes a plurality of through holes, and the upper electrode plate includes a plurality of through holes, is capable of contacting the exhaust plate in parallel, and is capable of being spaced apart from the exhaust plate.

摘要翻译： 基板处理装置包括处理室，其容纳晶片并对晶片进行等离子体蚀刻处理，与处理室连通的排气室，将处理室与排气室分隔开的排气板，防止处理过程中的等离子体 所述排气板包括多个通孔，所述上电极板包括多个通孔，所述多个通孔能够将所述排气板与所述排气室接触， 并且能够与排气板间隔开。

公开(公告)号：US20050106875A1

公开(公告)日：2005-05-19

申请号：US10948241

申请日：2004-09-24

申请人： Kazuhiro Kubota ,  Yoshiki Igarashi ,  Shigeru Tahara ,  Shin Okamoto ,  Toshihiko Shindo ,  Yoshinobu Ooya

发明人： Kazuhiro Kubota ,  Yoshiki Igarashi ,  Shigeru Tahara ,  Shin Okamoto ,  Toshihiko Shindo ,  Yoshinobu Ooya

IPC分类号： G03F7/42 ,  H01L21/027 ,  H01L21/302 ,  H01L21/306 ,  H01L21/3065 ,  H01L21/311 ,  H01L21/461

CPC分类号： H01L21/31116 ,  H01J2237/3342 ,  H01L21/31138

摘要： A plasma ashing method of an object to be processed removes a resist film therefrom in a processing vessel after etching a part of a low dielectric constant film with the resist film having a pattern thereon as a mask in the processing vessel. The plasma ashing method includes a first and a second ashing processes. The first ashing process removes deposits off an inner wall of the processing vessel by using a first processing gas including at least O2 gas while controlling the pressure in the processing vessel to be smaller than or equal to 20 mTorr. The second ashing process removes the resist film by using a second processing gas including at least O2 gas.

摘要翻译： 在处理容器内蚀刻一部分具有图案的抗蚀剂膜作为掩模的低介电常数膜的一部分后，处理容器中的等离子体灰化方法从处理容器中除去抗蚀剂膜。 等离子体灰化方法包括第一和第二灰化过程。 第一灰化过程通过使用包括至少O 2 2气体的第一处理气体同时将处理容器中的压力控制在小于或等于20mTorr，从处理容器的内壁去除沉积物 。 第二灰化处理通过使用至少包含O 2 O 2气体的第二处理气体去除抗蚀剂膜。

公开(公告)号：US09048178B2

公开(公告)日：2015-06-02

申请号：US14346986

申请日：2012-09-25

申请人： Kazuhiro Kubota ,  Masanobu Honda ,  Takayuki Katsunuma

发明人： Kazuhiro Kubota ,  Masanobu Honda ,  Takayuki Katsunuma

IPC分类号： H01L21/302 ,  H01L21/66 ,  H01J37/32 ,  H01L21/311 ,  H01L21/768

CPC分类号： H01L21/3065 ,  H01J37/32009 ,  H01J37/32449 ,  H01J37/32724 ,  H01L21/308 ,  H01L21/31116 ,  H01L21/31144 ,  H01L21/76802 ,  H01L21/76811 ,  H01L21/76813 ,  H01L21/76877 ,  H01L22/26 ,  H01L2221/1015 ,  H01L2924/0002 ,  H01L2924/00

摘要： A plasma etching method is provided for etching a substrate corresponding to an etching object within an etching apparatus that includes a supply condition adjustment unit for adjusting a supply condition for supplying etching gas to the substrate, a temperature adjustment unit for adjusting a temperature of the substrate placed on a stage along a radial direction, and a plasma generating unit for generating plasma within a space between the supply condition adjustment unit and the stage. The plasma etching method includes a control step in which the temperature adjustment unit controls the temperature of the substrate to be uniform within a substrate plane of the substrate, and an adjustment step in which the supply condition adjustment unit adjusts a concentration distribution of active species contained in the plasma generated by the plasma generation unit within the space above the substrate.

摘要翻译： 提供了一种等离子体蚀刻方法，用于在包括用于调节向衬底提供蚀刻气体的供应条件的供应条件调节单元的蚀刻装置内蚀刻对应于蚀刻对象的衬底，温度调节单元，用于调节衬底的温度 放置在沿径向的台面上，以及等离子体产生单元，用于在供应条件调节单元和台之间的空间内产生等离子体。 等离子体蚀刻方法包括：控制步骤，其中温度调节单元控制衬底的温度在衬底的衬底平面内均匀;以及调节步骤，其中供应条件调节单元调节所含活性物质的浓度分布 在等离子体产生单元产生的等离子体中，在衬底上方的空间内。

公开(公告)号：US20130014895A1

公开(公告)日：2013-01-17

申请号：US13542818

申请日：2012-07-06

申请人： Masaya Kawamata ,  Masanobu Honda ,  Kazuhiro Kubota

发明人： Masaya Kawamata ,  Masanobu Honda ,  Kazuhiro Kubota

IPC分类号： H01L21/3065

CPC分类号： H01J37/32091 ,  C23C16/4558 ,  H01J37/3244

摘要： A substrate processing apparatus can suppress an edge gas from being diffused toward a center region of a substrate. An upper electrode 200 serving as a gas introducing unit configured to supply one kind of gas or different kinds of gases to a center region and an edge region of the substrate includes a center gas inlet section 204 having a multiple number of gas holes 212 for a center gas; and an edge gas inlet section 206 having a multiplicity of gas holes 214 for an edge gas. By providing a gas hole formation plate 230 having gas holes 232 communicating with the gas holes 214 at a bottom surface of the edge gas inlet section 206, a vertical position of edge gas discharging openings can be adjusted.

摘要翻译： 基板处理装置可以抑制边缘气体朝向基板的中心区域扩散。 作为构成为将一种气体或不同种类的气体供给到基板的中心区域和边缘区域的气体导入单元的上部电极200包括具有多个气孔212的中心气体导入部204， 中心气 以及边缘气体入口部分206，其具有用于边缘气体的多个气体孔214。 通过在边缘气体入口部206的底面设置具有与气孔214连通的气孔232的气孔形成板230，能够调整边缘气体排出口的垂直位置。

公开(公告)号：US09460893B2

公开(公告)日：2016-10-04

申请号：US13542818

申请日：2012-07-06

申请人： Masaya Kawamata ,  Masanobu Honda ,  Kazuhiro Kubota

发明人： Masaya Kawamata ,  Masanobu Honda ,  Kazuhiro Kubota

IPC分类号： C23C16/455 ,  H01J37/32

CPC分类号： H01J37/32091 ,  C23C16/4558 ,  H01J37/3244

摘要： A substrate processing apparatus can suppress an edge gas from being diffused toward a center region of a substrate. An upper electrode 200 serving as a gas introducing unit configured to supply one kind of gas or different kinds of gases to a center region and an edge region of the substrate includes a center gas inlet section 204 having a multiple number of gas holes 212 for a center gas; and an edge gas inlet section 206 having a multiplicity of gas holes 214 for an edge gas. By providing a gas hole formation plate 230 having gas holes 232 communicating with the gas holes 214 at a bottom surface of the edge gas inlet section 206, a vertical position of edge gas discharging openings can be adjusted.

摘要翻译： 基板处理装置可以抑制边缘气体朝向基板的中心区域扩散。 作为构成为将一种气体或不同种类的气体供给到基板的中心区域和边缘区域的气体导入单元的上部电极200包括具有多个气孔212的中心气体导入部204， 中心气 以及边缘气体入口部分206，其具有用于边缘气体的多个气体孔214。 通过在边缘气体入口部206的底面设置具有与气孔214连通的气孔232的气孔形成板230，能够调整边缘气体排出口的垂直位置。

公开(公告)号：US09349619B2

公开(公告)日：2016-05-24

申请号：US14238552

申请日：2012-08-28

申请人： Masaya Kawamata ,  Masanobu Honda ,  Kazuhiro Kubota

发明人： Masaya Kawamata ,  Masanobu Honda ,  Kazuhiro Kubota

IPC分类号： H01L21/67 ,  H01L21/3065 ,  H01J37/32 ,  H01L21/311 ,  H01L21/683

CPC分类号： H01L21/67069 ,  H01J37/32091 ,  H01J37/32449 ,  H01L21/3065 ,  H01L21/31116 ,  H01L21/67109 ,  H01L21/67248 ,  H01L21/6831

摘要： A plasma etching apparatus includes a processing chamber; a holding unit for holding the substrate within the processing chamber; an electrode plate facing the holding unit; a plurality of supply parts arranged at different radial positions with respect to the substrate for supplying processing gas to a space between the holding unit and the electrode plate; a high frequency power supply that supplies high frequency power to the holding unit and/or the electrode plate to convert the processing gas supplied to the space into plasma; an adjustment unit that adjusts a supply condition for each of the supply parts; and a control unit that controls the adjustment unit to vary the supply condition between a position where an effect of diffusion of processing gas on an active species concentration distribution at the substrate is dominant and a position where an effect of flow of the processing gas is dominant.

摘要翻译： 等离子体蚀刻装置包括处理室; 保持单元，用于将基板保持在处理室内; 面对所述保持单元的电极板; 多个供给部件，其布置在相对于所述基板的不同径向位置处，用于将处理气体供应到所述保持单元和所述电极板之间的空间; 高频电源，其向所述保持单元和/或所述电极板提供高频电力，以将供应到所述空间的处理气体转换为等离子体; 调整单元，调整各供给部的供给条件; 以及控制单元，其控制所述调整单元改变处理气体的扩散对所述基板的活性种类浓度分布的影响为主的位置与所述处理气体的流动的影响为主的位置之间的供给条件 。

公开(公告)号：US20140193977A1

公开(公告)日：2014-07-10

申请号：US14238552

申请日：2012-08-28

申请人： Masaya Kawamata ,  Masanobu Honda ,  Kazuhiro Kubota

发明人： Masaya Kawamata ,  Masanobu Honda ,  Kazuhiro Kubota

IPC分类号： H01L21/67 ,  H01L21/3065

CPC分类号： H01L21/67069 ,  H01J37/32091 ,  H01J37/32449 ,  H01L21/3065 ,  H01L21/31116 ,  H01L21/67109 ,  H01L21/67248 ,  H01L21/6831

摘要： A plasma etching apparatus includes a processing chamber; a holding unit for holding the substrate within the processing chamber; an electrode plate facing the holding unit; a plurality of supply parts arranged at different radial positions with respect to the substrate for supplying processing gas to a space between the holding unit and the electrode plate; a high frequency power supply that supplies high frequency power to the holding unit and/or the electrode plate to convert the processing gas supplied to the space into plasma; an adjustment unit that adjusts a supply condition for each of the supply parts; and a control unit that controls the adjustment unit to vary the supply condition between a position where an effect of diffusion of processing gas on an active species concentration distribution at the substrate is dominant and a position where an effect of flow of the processing gas is dominant.

摘要翻译： 等离子体蚀刻装置包括处理室; 保持单元，用于将基板保持在处理室内; 面对所述保持单元的电极板; 多个供给部件，其布置在相对于所述基板的不同径向位置处，用于将处理气体供应到所述保持单元和所述电极板之间的空间; 高频电源，其向所述保持单元和/或所述电极板提供高频电力，以将供应到所述空间的处理气体转换为等离子体; 调整单元，调整各供给部的供给条件; 以及控制单元，其控制所述调整单元改变处理气体的扩散对所述基板的活性种类浓度分布的影响为主的位置与所述处理气体的流动的影响为主的位置之间的供给条件 。

公开(公告)号：US08021564B2

公开(公告)日：2011-09-20

申请号：US11868045

申请日：2007-10-05

申请人： Isamu Sakuragi ,  Kazuhiro Kubota

发明人： Isamu Sakuragi ,  Kazuhiro Kubota

IPC分类号： G01L21/30

CPC分类号： H01L21/31138 ,  G03F7/42 ,  G03F7/427 ,  H01J37/32963 ,  H01L22/26 ,  H01L2924/0002 ,  Y10T156/1105 ,  Y10T156/1906 ,  H01L2924/00

摘要： A method for detecting an end point of a resist peeling process in which a resist is gasified to be peeled off by producing hydrogen radicals by catalytic cracking reaction where a hydrogen-containing gas contacts with a high-temperature catalyst, and contacting the produced hydrogen radicals with a resist on a substrate, includes monitoring one or more parameters indicating a state of the catalyst and detecting the end point of the resist peeling process based on variations of the monitored parameters. The hydrogen-containing gas may be a H2 gas. The parameters indicating the state of the catalyst may be one or more electrical parameters when a power is supplied to the catalyst. Further, the catalyst may be a filament made of a high melting point metal.

摘要翻译： 一种用于检测抗蚀剂剥离过程的终点的方法，其中通过催化裂化反应在其中含氢气体与高温催化剂接触的同时通过产生氢自由基来将抗蚀剂气化以被剥离，并使所产生的氢原子 在基板上具有抗蚀剂，包括监测指示催化剂状态的一个或多个参数，并且基于监测参数的变化检测抗蚀剂剥离过程的终点。 含氢气体可以是H 2气体。 指示催化剂状态的参数可以是当向催化剂供电时的一个或多个电参数。 此外，催化剂可以是由高熔点金属制成的长丝。

公开(公告)号：US07922865B2

公开(公告)日：2011-04-12

申请号：US10362879

申请日：2001-08-28

申请人： Koji Miyata ,  Jun Hirose ,  Akira Kodashima ,  Shigeki Tozawa ,  Kazuhiro Kubota ,  Yuki Chiba

发明人： Koji Miyata ,  Jun Hirose ,  Akira Kodashima ,  Shigeki Tozawa ,  Kazuhiro Kubota ,  Yuki Chiba

IPC分类号： H01L21/306

CPC分类号： H01J37/3266 ,  H01J37/3408

摘要： In a magnetic field generator for magnetron plasma generation which comprises a dipole-ring magnet with a plurality of columnar anisotropic segment magnets arranged in a ring-like manner, or in an etching apparatus and a method both of which utilize the magnetic field generator, the uniformity of plasma treatment over the entire surface of a wafer (workpiece) is improved by controlling the direction of the magnetic field relative to the working surface of the wafer (workpiece) which is subject to plasma treatment such as etching.

摘要翻译： 在用于磁控管等离子体生成的磁场发生器中，其包括具有以环状布置的多个柱状各向异性区段磁体的偶极环磁体，或者在利用磁场发生器的蚀刻装置和方法中， 通过控制相对于进行诸如蚀刻等离子体处理的晶片（工件）的工作表面的磁场方向来改善晶片（工件）整个表面上的等离子体处理的均匀性。

公开(公告)号：US07799703B2

公开(公告)日：2010-09-21

申请号：US12025359

申请日：2008-02-04

申请人： Kazuhiro Kubota ,  Naotsugu Hoshi ,  Yuki Chiba ,  Ryuichi Asako

发明人： Kazuhiro Kubota ,  Naotsugu Hoshi ,  Yuki Chiba ,  Ryuichi Asako

IPC分类号： H01L21/31 ,  H01L21/469 ,  H01L21/4763

CPC分类号： H01L21/76802 ,  H01L21/3105 ,  H01L21/31058 ,  H01L21/76814 ,  H01L21/76826 ,  H01L21/76835

摘要： A processing method includes a gas having a Si—CH3 bond supplied into a processing chamber after a target substrate to be processed is loaded into the processing chamber; and a silylation process performed on the target substrate. The internal pressure of the chamber by the supply of the gas having the Si—CH3 bond and the gas supply time are set to be within ranges where the silylation process can be performed while the internal pressure of the chamber is decreased to reach an eligible pressure level where the wafer can be unloaded after the internal pressure of the chamber is increased up to a preset pressure by the supply of the gas.

摘要翻译： 处理方法包括将待处理的目标基板装载到处理室中之后，将具有Si-CH3键的气体供应到处理室中; 和在靶基质上进行的甲硅烷基化处理。 通过供给具有Si-CH3键的气体和气体供给时间的室的内部压力被设定在可以进行甲硅烷化处理的范围内，同时室的内部压力降低到达到合格压力 在通过气体的供应将腔室的内部压力增加到预定压力之后可以卸载晶片的水平面。