摘要:
An epitaxial growth furnace is provided for effecting the formation of an epitaxial layer on the surface of a semiconductor wafer by CVD in a reaction chamber of the furnace. The furnace comprises a wafer holder having an opening for exposing a surface area of the wafer which is subject to epitaxial growth, an opening flange adapted for engagement with a chamfered tapered face of a whole peripheral edge of the wafer on the side of said surface area thereof, and a plurality of jaws for detachably engaging with an outer periphery of the wafer on a back surface side of said surface area.
摘要:
Disclosed is a compact apparatus for manufacturing semiconductor wafers, which is aimed at complete removing of moisture from the wafers after final cleaning while reducing the manufacturing time. The apparatus includes a cleaning chamber (1) for final cleaning, a storage chamber (3) for storing wafers, a transfer chamber (2) communicating with the both cleaning and storage chambers (1, 3), and formed in its upper wall with a heat-conducting window (7), a robot hand (5) and a robot arm (4) for transporting the wafer (W) from the cleaning chamber (1) to the storage chamber (3) within the transfer chamber, infrared lamps (6) arranged to face the window (7) outside the transfer chamber (2) so as to heat the wafer (W) in the course of transportation within the transfer chamber, gas supply ports (8) for producing a laminar flow of inert gas from the storage chamber (3) to the cleaning chamber (1) to expose wafers (W) with the gas, and exhaust ports (9) for exhausting the moisture removed from wafers.
摘要:
An epitaxial growth furnace comprising first and second partition walls arranged within a reaction chamber, a first separate space surrounded by the partition walls and the inner wall surface of the reaction chamber, a second separate space partitioned by the partition walls so as to be isolated from the inner wall surface of the reaction chamber, a holding mechanism adapted to hold a pair of semiconductor wafers respectively on the first and second partition walls so that the principal surfaces of the pair of wafers face each other with spacing therebetween and are also exposed to the second separate space, and a pair of heaters for respectively irradiating radiant heat to the back surfaces of the two wafers.
摘要:
Disclosed is a method for manufacturing a semiconductor wafer having an epitxial layer on a surface thereof, by the steps of forming a pritective oxide film on a surface of a semiconductor wafer prior to loading of the wafer into an eptaxial growth furnace, removing the protective oxide film formed on the surface of the wafer by heating after the wafer is loaded in the furnace, and performing epitaxial growth of the epitaxial layer on the surface from which the protective oxide film is removed in the furnace. The protective oxide film is removed by heating the wafer in the furnace in an ambience of hydrogen gas at a pressure ranging from 0.0133×105 Pa to 1.013×105 Pa and at a temperature ranging from 800° C. to 1,000 ° C., or by heating the wafer in the furnace at a pressure of 5×106 Pa or under and at a temperature ranging from 800° C. to 1,000° C.
摘要:
A method and apparatus for forming an epitaxial layer on a semiconductor wafer supported on a suscepter in an epitaxial growth furnace. Ther wafer to be processed is placed on the suscepter outside the furnace. The suscepter carrying the wafer is transferred into the furnace from the outside thereof and mounted in a loading position within the furnace. An epitaxial growth process is then performed on the wafer on the suscepter mounted in the loading position. After the completion of the growth process, the suscepter carrying the wafer thereon is removed from the furnace loading position and transferred to the outside of the furnace.
摘要:
A stereoscopic image displaying apparatus is provided. The stereoscopic image displaying apparatus, including: an image generation section having a plurality of pixels for a plurality of colors arranged in a two-dimensional matrix and adapted to drive the pixels for the colors to generate a color image; and a parallax applying section adapted to apply a parallax to the image to allow color display of a three-dimensional image and capable of changing over a parallax direction between a first direction of the color image and a second direction perpendicular to the first direction. The parallax applying section has a first parallel state and a second parallel state. The image generation section and the parallax application section are configured so that the rates of the colors at the pixels for the colors corresponding to light transmission regions between adjacent ones of the parallax barrier regions are uniform or got closer in both of the parallel states.
摘要:
A liquid crystal display includes a pair of substrates and a liquid crystal layer interposed between the substrates and has a reflective area and a transmissive area. At least one of the substrates is provided with a retardation film whose phase difference differs between the reflective area and the transmissive area. Alternatively, at least one of the substrates is provided with a retardation film whose slow axis differs between the reflective area and the transmissive area.
摘要:
A vehicular control apparatus for a vehicle has a twin clutch type automatic transmission. The control apparatus comprises an external information acquisition apparatus for acquiring external information required for vehicular transmission control, an input section for taking in the external information from the external information acquisition apparatus; and a pre-shift gear selection section for selecting a predetermined gear train among plural gear trains of the transmission to execute a pre-shift in accordance with the external information.
摘要:
A vehicle speed control system includes a road shape recognition unit which recognizes a road shape, a target speed setting unit which sets a target speed according to the road shape, a speed control unit which controls the host vehicle's speed according to the target speed, a parameter detecting unit which detects at least one of parameters representing the driver's steering rotation, a yaw rate of the host vehicle, and a lateral acceleration of the host vehicle, and a first acceleration determining unit which, after the speed control unit has decelerated, determines whether or not to accelerate the host vehicle according to reference parameters based on a road shape and the host vehicle's speed and parameters detected by the parameter detecting unit, wherein if the first acceleration determining unit has determined to accelerate, the target speed setting unit sets a target speed of the host vehicle according to a predetermined acceleration.
摘要:
This invention provides a vehicle cruise control system which, during recognition of a shape of a road extending in a frontward direction of host vehicle, can calculate the road shape rapidly and accurately from a positional relationship with respect to the host vehicle. The system includes at least: a position change detector that detects, from information on the road existing in the frontward direction of the vehicle, a horizontal distance from a line segment orthogonal to a traveling direction vector of the vehicle, to a centerline of the road, the detection being conducted at a plurality of measuring points in an extending direction of the traveling direction vector; a road shape recognizer that identifies the shape of the road from data relating to linearity of changes in each of the horizontal distances, the linearity data being obtained by the position change detector; and a cruise controller that controls traveling of the vehicle according to results of the identification by the road shape recognizer.