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    Semiconductor imaging device and method for manufacturing the same
    2.
    发明申请
    Semiconductor imaging device and method for manufacturing the same 有权
    半导体成像装置及其制造方法

    公开(公告)号：US20070228502A1

    公开(公告)日：2007-10-04

    申请号：US11700124

    申请日：2007-01-31

    申请人： Masanori Minamio ,  Tomoko Komatsu ,  Toshiyuki Fukuda

    发明人： Masanori Minamio ,  Tomoko Komatsu ,  Toshiyuki Fukuda

    IPC分类号： H01L27/14

    CPC分类号： H01L27/14618 ,  H01L24/73 ,  H01L27/14627 ,  H01L27/14683 ,  H01L27/14685 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/49171 ,  H01L2224/73265 ,  H01L2224/92247 ,  H01L2924/01019 ,  H01L2924/01079 ,  H01L2924/15153 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

    摘要： A semiconductor imaging device includes: a semiconductor imaging element including an imaging region, a peripheral circuit region, and an electrode region, the imaging region including a plurality of micro lenses; a semiconductor package the semiconductor package in which a cavity for mounting the semiconductor imaging element is formed, the semiconductor package including a plurality of internal connection terminals formed inside the periphery of the cavity for being connected with a plurality of electrode terminals of the semiconductor imaging element and a plurality of external connection terminals connected with the internal connection terminals; a fixing member for fixing the semiconductor imaging element to the cavity; and an optical member fixed to the semiconductor package by a sealing member so as to cover the semiconductor imaging element arranged in the cavity. Wherein, a face obtained by connecting vertexes of the micro lenses is formed into a continuous concave curve.

    摘要翻译： 一种半导体成像装置，包括：具有成像区域，外围电路区域和电极区域的半导体摄像元件，所述摄像区域包括多个微透镜; 半导体封装，其中形成有用于安装半导体成像元件的空腔的半导体封装，所述半导体封装包括形成在所述腔的周围的多个内部连接端子，用于与所述半导体成像元件的多个电极端子连接 以及与所述内部连接端子连接的多个外部连接端子; 用于将所述半导体成像元件固定到所述空腔的固定构件; 以及光学构件，其通过密封构件固定到所述半导体封装，以覆盖布置在所述空腔中的所述半导体成像元件。 其中，将通过连接微透镜的顶点获得的面形成为连续凹曲线。

    Semiconductor imaging device and method for manufacturing the same
    3.
    发明授权
    Semiconductor imaging device and method for manufacturing the same 有权
    半导体成像装置及其制造方法

    公开(公告)号：US07547955B2

    公开(公告)日：2009-06-16

    申请号：US11700124

    申请日：2007-01-31

    申请人： Masanori Minamio ,  Tomoko Komatsu ,  Toshiyuki Fukuda

    发明人： Masanori Minamio ,  Tomoko Komatsu ,  Toshiyuki Fukuda

    IPC分类号： H01L27/15

    CPC分类号： H01L27/14618 ,  H01L24/73 ,  H01L27/14627 ,  H01L27/14683 ,  H01L27/14685 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/49171 ,  H01L2224/73265 ,  H01L2224/92247 ,  H01L2924/01019 ,  H01L2924/01079 ,  H01L2924/15153 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

    摘要： A semiconductor imaging device includes: a semiconductor imaging element including an imaging region, a peripheral circuit region, and an electrode region, the imaging region including a plurality of micro lenses; a semiconductor package the semiconductor package in which a cavity for mounting the semiconductor imaging element is formed, the semiconductor package including a plurality of internal connection terminals formed inside the periphery of the cavity for being connected with a plurality of electrode terminals of the semiconductor imaging element and a plurality of external connection terminals connected with the internal connection terminals; a fixing member for fixing the semiconductor imaging element to the cavity; and an optical member fixed to the semiconductor package by a sealing member so as to cover the semiconductor imaging element arranged in the cavity. Wherein, a face obtained by connecting vertexes of the micro lenses is formed into a continuous concave curve.

    摘要翻译： 一种半导体成像装置，包括：具有成像区域，外围电路区域和电极区域的半导体摄像元件，所述摄像区域包括多个微透镜; 半导体封装，其中形成有用于安装半导体成像元件的空腔的半导体封装，所述半导体封装包括形成在所述腔的周围的多个内部连接端子，用于与所述半导体成像元件的多个电极端子连接 以及与所述内部连接端子连接的多个外部连接端子; 用于将所述半导体成像元件固定到所述空腔的固定构件; 以及光学构件，其通过密封构件固定到所述半导体封装，以覆盖布置在所述空腔中的所述半导体成像元件。 其中，将通过连接微透镜的顶点获得的面形成为连续凹曲线。

    Solid state imaging device and method for manufacturing the same
    5.
    发明授权
    Solid state imaging device and method for manufacturing the same 有权
    固态成像装置及其制造方法

    公开(公告)号：US07619678B2

    公开(公告)日：2009-11-17

    申请号：US11584560

    申请日：2006-10-23

    申请人： Tomoko Komatsu ,  Tomoki Masuda ,  Nobukazu Teranishi

    发明人： Tomoko Komatsu ,  Tomoki Masuda ,  Nobukazu Teranishi

    IPC分类号： H04N5/225

    CPC分类号： H01L27/14627 ,  H01L27/14603 ,  H01L27/1462

    摘要： A solid state imaging device includes: a solid state imaging element including a light receiving element, a microlens formed above the light receiving element, a first transparent layer formed on the microlens and a second transparent layer formed on or above the microlens and harder than the first transparent layer; a transparent component formed above the second transparent layer; and an adhesive layer for bonding the second transparent layer and the transparent component. The hard second transparent layer prevents the occurrence of scratches during a dicing step.

    摘要翻译： 固态成像装置包括：固态成像元件，包括光接收元件，形成在光接收元件上方的微透镜，形成在微透镜上的第一透明层和形成在微透镜上或之上的第二透明层，并且硬 第一透明层; 形成在所述第二透明层上方的透明部件; 以及用于粘合第二透明层和透明部件的粘合剂层。 硬的第二透明层防止在切割步骤期间发生划痕。

    SOLID-STATE IMAGE PICKUP DEVICE AND FABRICATION METHOD THEREOF
    6.
    发明申请
    SOLID-STATE IMAGE PICKUP DEVICE AND FABRICATION METHOD THEREOF 有权
    固态图像拾取器件及其制造方法

    公开(公告)号：US20090039454A1

    公开(公告)日：2009-02-12

    申请号：US12186157

    申请日：2008-08-05

    申请人： Tomoki MASUDA ,  Yasuo Takeuchi ,  Tomoko Komatsu ,  Tsuyoshi Ichinose

    发明人： Tomoki MASUDA ,  Yasuo Takeuchi ,  Tomoko Komatsu ,  Tsuyoshi Ichinose

    IPC分类号： H01L31/0232 ,  H01L21/02

    CPC分类号： H01L27/1462 ,  H01L27/14627 ,  H01L27/14685

    摘要： Provided is a solid-state image pickup device capable of suppressing deterioration of characteristic caused due to an antireflection film itself absorbing a light. In the solid-state image pickup device of the present invention, a plurality of color filters 8a, 8b, and 8c having spectral characteristics, respectively, different from each other are provided so as to correspond to a plurality of light reception sections 2, respectively, aligned on a semiconductor substrate 1. Further, a plurality of microlenses 10 are provided above the plurality of color filters 8a, 8b, and 8c, respectively. A plurality of antireflection films 11a are selectively formed on surfaces of the microlenses 10 provided above color filters 8b each having a predetermined spectral characteristic.

    摘要翻译： 提供一种能够抑制由吸收光的抗反射膜本身引起的特性劣化的固态图像拾取装置。 在本发明的固态图像拾取装置中，分别具有彼此不同的分光特性的多个滤色器8a，8b和8c分别对应于多个光接收部2 在半导体衬底1上对准。此外，多个微透镜10分别设置在多个滤色器8a，8b和8c上方。 多个防反射膜11a选择性地形成在设置在具有预定光谱特性的滤色器8b之上的微透镜10的表面上。

    Solid state imaging device and fabrication method thereof, and camera incorporating the solid state imaging device
    9.
    发明申请
    Solid state imaging device and fabrication method thereof, and camera incorporating the solid state imaging device 有权
    固态成像装置及其制造方法以及并入固态成像装置的相机

    公开(公告)号：US20060158547A1

    公开(公告)日：2006-07-20

    申请号：US11333339

    申请日：2006-01-18

    申请人： Tomoko Komatsu ,  Toshihiro Higuchi

    发明人： Tomoko Komatsu ,  Toshihiro Higuchi

    IPC分类号： H04N5/225

    CPC分类号： H01L27/14621 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/14685

    摘要： A solid state imaging device of the present invention comprises: a semiconductor substrate; a plurality of light receiving elements arranged in a matrix configuration on the semiconductor substrate; a plurality of color filter segments provided above the light receiving elements; and a light collector provided above the color filter segments for collecting light on the light receiving elements. The color filter segments are mutually separated by interstices. The interstices contain a gas.

    摘要翻译： 本发明的固态成像装置包括：半导体衬底; 多个在所述半导体衬底上以矩阵构造布置的光接收元件; 设置在所述光接收元件上方的多个滤色器片段; 以及设置在滤色器片段上方的用于在光接收元件上收集光的集光器。 滤色片段通过间隙相互分离。 空隙含有气体。