公开(公告)号：US5481558A

公开(公告)日：1996-01-02

申请号：US261150

申请日：1994-06-14

申请人： Masao Ikeda ,  Toyoharu Ohata

发明人： Masao Ikeda ,  Toyoharu Ohata

IPC分类号： H01S5/00 ,  H01S5/327 ,  H01S3/19

CPC分类号： H01L33/0087 ,  H01S5/327

摘要： According to the present invention, a p-type ZnSe or p-type ZnSSe buffer layer is formed on a p-type GaAs substrate through at least single layer made of AlGaInP-based material and a II/VI-compound laser structure is formed on the p-type ZnSe or p-type ZnSSe buffer layer. Further, an AlGaAs-based buffer layer is provided between the substrate and the AlGaInP-based buffer layer. Further, the AlGaAs-based buffer layer has a composition expressed as Al.sub.0.5 Ga.sub.0.4 As and the AlGaInP-based buffer layer has a composition expressed as Al.sub.0.5 In.sub.0.5 P. Furthermore, a composition ratio x of Al in a buffer layer expressed as Al.sub.x Ga.sub.1-x As is modulated from 0 to 0.6 and a composition ratio y of Al in a buffer layer expressed as (Al.sub.y Ga.sub.1-y).sub.0.5 In.sub.0.5 P is modulated from 0 to 1. According to the present invention, an operation voltage of the II/VI-compound semiconductor laser can be reduced and the green or blue color semiconductor laser of low operation voltage can be obtained. This semiconductor laser can continuously be operated at room temperature and also operated with a long life span.

摘要翻译： 根据本发明，通过至少由AlGaInP基材料制成的单层，在p型GaAs衬底上形成p型ZnSe或p型ZnSSe缓冲层，并且将II / VI复合激光器结构形成在 p型ZnSe或p型ZnSSe缓冲层。 此外，在基板和基于AlGaInP的缓冲层之间设置基于AlGaAs的缓冲层。 此外，基于AlGaAs的缓冲层具有以Al0.5Ga0.4As表示的组成，AlGaInP基缓冲层具有以Al 0.5 In 0.5 P表示的组成。 此外，以Al x Ga 1-x As表示的缓冲层中的Al的组成比x从0变为0.6，并且将表示为（AlyGa1-y）0.5In0.5P的缓冲层中的Al的组成比y从0调制为 根据本发明，可以降低II / VI化合物半导体激光器的工作电压，并且可以获得低操作电压的绿色或蓝色半导体激光器。 该半导体激光器可以在室温下连续工作，并且寿命长。

公开(公告)号：US20140033830A1

公开(公告)日：2014-02-06

申请号：US13884777

申请日：2011-12-22

申请人： Tomoyuki Kasuga ,  Atsushi Saito ,  Takayuki Yoshimi ,  Masao Ikeda

发明人： Tomoyuki Kasuga ,  Atsushi Saito ,  Takayuki Yoshimi ,  Masao Ikeda

IPC分类号： B24B49/16 ,  G01L5/00

CPC分类号： G01L5/0076 ,  B24B5/04 ,  B24B19/06 ,  B24B49/003 ,  B24B49/105 ,  B24B49/14 ,  B24B49/16 ,  G01L5/12

摘要： A grinding abnormality monitoring method and device for grinding a plurality of works of the same type are proposed which can improve the accuracy of judgment whether an abnormality is generated or not by properly setting a threshold value. According to the method or the device, by setting at least one of upper and lower limit values of a trial grinding load detected at the trial grinding of at least one of the works, an occurrence of grinding abnormality is judged when an actual grinding load detected at the actual grinding of work exceeds at least one of the upper and lower limit values thereof which varies depending on the time elapsed from the start of the actual grinding or a position of work relative to a grinding wheel.

摘要翻译： 提出了一种用于研磨相同类型的多个作业的研磨异常监测方法和装置，其可以通过适当地设定阈值来提高判断是否产生异常的判断精度。 根据该方法或装置，通过设定在至少一个工件的试磨中检测到的试验研磨载荷的上限值和下限值中的至少一个，当检测到实际研磨载荷时，判断出磨削异常的发生 在实际的工件磨削中，超过其上下限值中的至少一个，这些上限值和下限值根据实际磨削开始时所经过的时间或相对于砂轮的工作位置而变化。

公开(公告)号：US08442079B2

公开(公告)日：2013-05-14

申请号：US13035540

申请日：2011-02-25

申请人： Tomoyuki Oki ,  Masaru Kuramoto ,  Masao Ikeda ,  Takao Miyajima ,  Hideki Watanabe ,  Hiroyuki Yokoyama

发明人： Tomoyuki Oki ,  Masaru Kuramoto ,  Masao Ikeda ,  Takao Miyajima ,  Hideki Watanabe ,  Hiroyuki Yokoyama

IPC分类号： H01S3/098

摘要： Provided is a driving method of a mode-locked semiconductor laser device comprising a laminated structure in which a first compound semiconductor layer, a third compound semiconductor layer having an emission region and a second compound semiconductor layer are successively laminated, a second electrode, and a first electrode. The laminated structure is formed on a compound semiconductor substrate having polarity, the third compound semiconductor layer includes a quantum well structure having a well layer and a barrier layer. The well layer has a depth of 1 nm or more and 10 nm or less. The barrier layer has an impurity doping density of 2×1018 cm−3 or more and 1×1020 cm−3 or less. An optical pulse is generated in the emission region by passing a current from the second electrode to the first electrode via the laminated structure.

摘要翻译： 提供了一种锁模半导体激光器件的驱动方法，其包括层叠结构，其中第一化合物半导体层，具有发射区域的第三化合物半导体层和第二化合物半导体层被连续层压，第二电极和 第一电极。 层叠结构形成在具有极性的化合物半导体基板上，第三化合物半导体层包括具有阱层和阻挡层的量子阱结构。 阱层的深度为1nm以上且10nm以下。 势垒层的杂质掺杂密度为2×1018cm-3以上且1×1020cm-3以下。 通过将电流从第二电极通过层压结构传递到第一电极，在发射区域中产生光脉冲。

公开(公告)号：US08290005B2

公开(公告)日：2012-10-16

申请号：US13212244

申请日：2011-08-18

申请人： Hiroyuki Yokoyama ,  Shunsuke Kono ,  Tomoyuki Oki ,  Masao Ikeda ,  Takao Miyajima ,  Hideki Watanabe

发明人： Hiroyuki Yokoyama ,  Shunsuke Kono ,  Tomoyuki Oki ,  Masao Ikeda ,  Takao Miyajima ,  Hideki Watanabe

IPC分类号： H01S3/13

CPC分类号： H01S5/06216 ,  H01S5/0428

摘要： An ultrashort pulse/ultra-high power laser diode with a simple structure and configuration is provided. In a method of driving a laser diode, the laser diode is driven by a pulse current which is 10 or more times higher than a threshold current value. The width of the pulse current is preferably 10 nanoseconds or less, and the value of the pulse current is specifically 0.4 amperes or over.

公开(公告)号：US20120002690A1

公开(公告)日：2012-01-05

申请号：US13212244

申请日：2011-08-18

申请人： Hiroyuki Yokoyama ,  Shunsuke Kono ,  Tomoyuki Oki ,  Masao Ikeda ,  Takao Miyajima ,  Hideki Watanabe

发明人： Hiroyuki Yokoyama ,  Shunsuke Kono ,  Tomoyuki Oki ,  Masao Ikeda ,  Takao Miyajima ,  Hideki Watanabe

IPC分类号： H01S3/13

CPC分类号： H01S5/06216 ,  H01S5/0428

摘要： An ultrashort pulse/ultra-high power laser diode with a simple structure and configuration is provided. In a method of driving a laser diode, the laser diode is driven by a pulse current which is 10 or more times higher than a threshold current value. The width of the pulse current is preferably 10 nanoseconds or less, and the value of the pulse current is specifically 0.4 amperes or over.

公开(公告)号：US20120002271A1

公开(公告)日：2012-01-05

申请号：US13166900

申请日：2011-06-23

申请人： Masaru Kuramoto ,  Masao Ikeda ,  Rintaro Koda ,  Tomoyuki Oki ,  Hideki Watanabe ,  Takao Miyajima ,  Hiroyuki Yokoyama

发明人： Masaru Kuramoto ,  Masao Ikeda ,  Rintaro Koda ,  Tomoyuki Oki ,  Hideki Watanabe ,  Takao Miyajima ,  Hiroyuki Yokoyama

IPC分类号： H01S3/00

CPC分类号： H01S5/1064 ,  H01S5/0425 ,  H01S5/0602 ,  H01S5/0657 ,  H01S5/16 ,  H01S5/22 ,  H01S5/32341 ,  H01S5/34333 ,  H01S5/50

摘要： A semiconductor optical amplifier includes: a laminated structure sequentially including a first compound semiconductor layer composed of GaN compound semiconductor and having a first conductivity type, a third compound semiconductor layer having a light amplification region composed of GaN compound semiconductor, and a second compound semiconductor layer composed of GaN compound semiconductor and having a second conductivity type; a second electrode formed on the second compound semiconductor layer; and a first electrode electrically connected to the first compound semiconductor layer. The laminated structure has a ridge stripe structure. When widths of the ridge stripe structure in a light output end face and the ridge stripe structure in a light incident end face are respectively Wout, and Win, Wout>Win is satisfied. A carrier non-injection region is provided in an internal region of the laminated structure from the light output end face along an axis line of the semiconductor optical amplifier.

摘要翻译： 半导体光放大器包括：依次包括由GaN化合物半导体构成的第一化合物半导体并具有第一导电类型的层压结构，具有由GaN化合物半导体构成的光放大区域的第三化合物半导体层和第二化合物半导体层 由GaN化合物半导体构成并具有第二导电类型; 形成在第二化合物半导体层上的第二电极; 和与第一化合物半导体层电连接的第一电极。 层叠结构具有脊形条纹结构。 当光输出端面中的棱条结构的宽度和光入射端面中的脊条纹结构的宽度分别为Wout时，满足Win，Wout> Win。 载体非注入区域沿着半导体光放大器的轴线从光输出端面设置在层叠结构的内部区域中。

公开(公告)号：US08008165B2

公开(公告)日：2011-08-30

申请号：US12836001

申请日：2010-07-14

申请人： Masahiro Nakayama ,  Naoki Matsumoto ,  Koshi Tamamura ,  Masao Ikeda

发明人： Masahiro Nakayama ,  Naoki Matsumoto ,  Koshi Tamamura ,  Masao Ikeda

IPC分类号： H01L21/30

CPC分类号： H01L21/02008 ,  B24B37/08 ,  H01L21/02024 ,  Y10S438/959

摘要： Nitride semiconductor wafers which are produced by epitaxially grown nitride films on a foreign undersubstrate in vapor phase have strong inner stress due to misfit between the nitride and the undersubstrate material. A GaN wafer which has made by piling GaN films upon a GaAs undersubstrate in vapor phase and eliminating the GaAs undersubstrate bends upward due to the inner stress owing to the misfit of lattice constants between GaN and GaAs.

摘要翻译： 由氮化物和下衬底材料之间的失配导致的，由外延生长的氮化物膜在气相中的外来下衬衬底产生的氮化物半导体晶片具有很强的内部应力。 通过在气相中在GaAs下衬底上堆叠GaN膜而消除GaAs下衬层而制成的GaN晶片由于内部应力而由于GaN和GaAs之间的晶格常数的失配而向上弯曲。

公开(公告)号：US20090198255A1

公开(公告)日：2009-08-06

申请号：US12071057

申请日：2008-02-14

申请人： Masao Ikeda

发明人： Masao Ikeda

IPC分类号： A61B17/00

CPC分类号： A61B17/12013 ,  A61B50/20 ,  A61B50/30 ,  A61B2017/12018 ,  Y10T29/53657

摘要： [PROBLEM TO BE SOLVED] A hemorrhoid ligation apparatus that allows the operator to handle with a single hand to ligate a hemorrhoid, under minimized risk of committing improper operation, is to be provided.[MEANS FOR SOLVING] The hemorrhoid ligation apparatus (10) includes a main cylinder (12) to which an O-ring (50) for ligating the hemorrhoid is to be attached on an outer circumferential surface of a front end portion, a sub cylinder (14) air-tightly and slidably provided inside the main cylinder (12), so as to suck the hemorrhoid into inside the front end portion of the main cylinder (12) upon being drawn toward a rear end portion of the main cylinder (12), an operating fluid loaded inside the sub cylinder (14), and a plunger (16) air-tightly and slidably provided inside the sub cylinder (14), so as to pressurize the operating fluid upon being squeezed toward a front end portion of the sub cylinder (14), to thereby squeeze the O-ring (50) toward the front end portion of the main cylinder (12) with the pressurized operating fluid, thus detaching the O-ring (50) from the main cylinder (12).

摘要翻译： [待解决的问题]提供了一种痔疮结扎装置，其能够在最小程度地进行不正当的操作的风险下使手术者用单手手术来结扎痔疮。 [解决方案]痔疮结扎装置（10）包括主缸（12），用于将痔疮结扎的O形环（50）安装在前端部的外周面上，副缸 （14）气密地滑动地设置在主气缸（12）的内部，以便在朝向主气缸（12）的后端部抽吸时将痔疮吸入主气缸（12）的前端部内 ），负载在子气缸（14）内的工作液体，以及气密地且可滑动地设置在子气缸（14）内部的柱塞（16），以便在朝向前述前端部分 从而通过加压工作流体将O形环（50）朝向主缸（12）的前端部挤压，从而将O形环（50）从主缸（12）分离 ）。

公开(公告)号：US07535082B2

公开(公告)日：2009-05-19

申请号：US11055599

申请日：2005-02-11

申请人： Masahiro Nakayama ,  Naoki Matsumoto ,  Koshi Tamamura ,  Masao Ikeda

发明人： Masahiro Nakayama ,  Naoki Matsumoto ,  Koshi Tamamura ,  Masao Ikeda

IPC分类号： H01L23/544

CPC分类号： H01L21/02008 ,  B24B37/08 ,  H01L21/02024 ,  Y10S438/959

摘要： Nitride semiconductor wafers which are produced by epitaxially grown nitride films on a foreign undersubstrate in vapor phase have strong inner stress due to misfit between the nitride and the undersubstrate material. A GaN wafer which has made by piling GaN films upon a GaAs undersubstrate in vapor phase and eliminating the GaAs undersubstrate bends upward due to the inner stress owing to the misfit of lattice constants between GaN and GaAs. Ordinary one-surface polishing having the steps of gluing a wafer with a surface on a flat disc, bringing another surface in contact with a lower turntable, pressing the disc, rotating the disc, revolving the turntable and whetting the lower surface, cannot remedy the inherent distortion. The Distortion worsens morphology of epitaxial wafers, lowers yield of via-mask exposure and invites cracks on surfaces. Nitride crystals are rigid but fragile. Chemical/mechanical polishing has been requested in vain. Current GaN wafers have roughened bottom surfaces, which induce contamination of particles and fluctuation of thickness.

摘要翻译： 由氮化物和下衬底材料之间的失配导致的，由外延生长的氮化物膜在气相中的外来下衬衬底产生的氮化物半导体晶片具有很强的内部应力。 通过在气相中在GaAs下衬底上堆叠GaN膜而消除GaAs下衬层而制成的GaN晶片由于内部应力而由于GaN和GaAs之间的晶格常数的失配而向上弯曲。 通常的单面抛光具有将晶片与平面盘上的表面胶合的步骤，使另一表面与下转台接触，按压盘，旋转盘，旋转转台并磨削下表面，不能补救 固有失真。 失真会加剧外延晶片的形态，降低通孔掩模曝光的产量，并引起表面裂纹。 氮化物晶体是刚性但脆弱的。 化学/机械抛光已被要求徒劳。 当前的GaN晶圆已经粗糙化了底面，这引起了颗粒的污染和厚度的波动。

公开(公告)号：US07528540B2

公开(公告)日：2009-05-05

申请号：US11242768

申请日：2005-10-04

申请人： Masao Ikeda

发明人： Masao Ikeda

IPC分类号： H01J1/62

CPC分类号： B82Y20/00 ,  G11B7/1275 ,  G11B2007/0006 ,  H01L25/0753 ,  H01L25/0756 ,  H01L2924/0002 ,  H01S5/02212 ,  H01S5/0224 ,  H01S5/02268 ,  H01S5/02272 ,  H01S5/02276 ,  H01S5/0425 ,  H01S5/2214 ,  H01S5/2231 ,  H01S5/32341 ,  H01S5/34326 ,  H01S5/34333 ,  H01S5/347 ,  H01S5/4043 ,  H01S5/4087 ,  H04N9/315 ,  H01L2924/00

摘要： A light emitting device which can be easily manufactured and can control the positions of light emission precisely, and an optical device. A first and second light emitting elements are formed on one face of a supporting base. The first light emitting element has an active layer made of GaInN mixed crystal on a GaN-made first substrate on the side thereof on which the supporting base is disposed. The second light emitting element has lasing portions on a GaAs-made second substrate on the side thereof on which the supporting base is disposed. Since the first and second light emitting elements are not grown on the same substrate, a multiple-wavelength laser having the output wavelength of around 400 nm can be easily obtained. Since the first substrate is transparent in the visible region, the positions of light emitting regions in the first and second light emitting elements can be precisely controlled by lithography.

摘要翻译： 可容易地制造并能够精确地控制发光位置的发光器件和光学器件。 第一和第二发光元件形成在支撑基座的一个面上。 第一发光元件在其上设置有支撑基底的一侧的GaN制的第一基板上具有由GaInN混晶构成的有源层。 第二发光元件在其上设置有支撑基底的一侧的GaAs制造的第二基板上具有激光部分。 由于第一发光元件和第二发光元件不在同一衬底上生长，所以可以容易地获得具有约400nm的输出波长的多波长激光器。 由于第一基板在可见光区域是透明的，因此通过光刻可以精确地控制第一和第二发光元件中的发光区域的位置。