公开(公告)号：US4803947A

公开(公告)日：1989-02-14

申请号：US3053

申请日：1987-01-13

申请人： Masao Ueki ,  Masaaki Hirooka ,  Junichi Hanna ,  Isamu Shimizu

发明人： Masao Ueki ,  Masaaki Hirooka ,  Junichi Hanna ,  Isamu Shimizu

IPC分类号： C23C16/44 ,  C23C16/54 ,  C23C16/00

CPC分类号： C23C16/44 ,  C23C16/545

摘要： There is disclosed an apparatus for forming deposited film which forms deposited film on a substrate by introducing a gaseous starting material for formation of deposited film and a gaseous oxidizing agent having the property of oxidation action for said gaseous starting material through separate routes respectively into a film forming space to thereby effect chemical contact therebetween, comprising one or two or more chambers for formation of deposited film and one or two or more etching chambers for etching at least one of said substrate and the deposited film formed on the substrate connected to one another.

摘要翻译： 公开了一种用于形成沉积膜的装置，其通过将用于形成沉积膜的气态起始材料和具有氧化作用的气态氧化剂的气态氧化剂分别通过分开的路线引入到基板上，形成沉积膜， 形成空间，从而实现其之间的化学接触，包括用于形成沉积膜的一个或两个或更多个腔室和用于蚀刻形成在彼此连接的衬底上的所述衬底和沉积膜中的至少一个的蚀刻室。

公开(公告)号：US4861623A

公开(公告)日：1989-08-29

申请号：US942209

申请日：1986-12-16

申请人： Masao Ueki ,  Masaaki Hirooka ,  Junichi Hanna ,  Isamu Shimizu

发明人： Masao Ueki ,  Masaaki Hirooka ,  Junichi Hanna ,  Isamu Shimizu

IPC分类号： H01L31/04 ,  C23C16/30 ,  C23C16/44 ,  H01L21/205 ,  H01L21/3205

CPC分类号： H01L21/32053

摘要： A method for forming a deposited film comprises introducing a gaseous starting material containing silicon and/or germanium atoms; a starting material containing at least one member selected from the group consisting of aluminum (Al), molybdenum (Mo), tungsten (W), titanium (Ti), and tantalum (Ta), which is capable of being converted to gaseous state; and a gaseous halogenic oxidizing agent which exerts an oxidative effect on the said starting materials for film formation, into a reaction space to effect contact therebetween to thereby chemically form a plural number of precursors containing precursors under excited state, and forming a deposited film on a substrate existing in a film-forming space by the use of at least one precursors of said percursors as the feeding source for the constituent element of the deposited film.

摘要翻译： 形成沉积膜的方法包括引入含硅和/或锗原子的气态原料; 含有选自铝（Al），钼（Mo），钨（W），钛（Ti）和钽（Ta））中的至少一种的起始材料，其能够转化为气态; 以及对所述成膜原料发挥氧化作用的气态卤素氧化剂进入反应空间，以使其间发生接触，从而化学形成含激发态前体的多种前体，并在其上形成沉积膜 存在于成膜空间中的底物通过使用至少一种所述本体的前体作为沉积膜的组成元素的进料源。

公开(公告)号：US4842897A

公开(公告)日：1989-06-27

申请号：US947036

申请日：1986-12-29

申请人： Eiji Takeuchi ,  Jun-Ichi Hanna ,  Isamu Shimizu ,  Masaaki Hirooka ,  Akira Sakai ,  Masao Ueki

发明人： Eiji Takeuchi ,  Jun-Ichi Hanna ,  Isamu Shimizu ,  Masaaki Hirooka ,  Akira Sakai ,  Masao Ueki

IPC分类号： C23C16/452 ,  H01L21/205

CPC分类号： H01L21/02505 ,  C23C16/452 ,  H01L21/02422 ,  H01L21/02425 ,  H01L21/0245 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262

摘要： A method for forming deposited film by introducing into a reaction space a gaseous starting material for formation of a deposited film and a gaseous halogenic oxidizing agent having the property of oxidation action for said starting material to effect chemical contact therebetween to thereby form a plural number of precursors including precursors under excited state, and forming said deposited film on a substrate previously position in a film forming space spatially communicated with said reaction space with the use of at least one precursor of these precursors as the feeding source for the constituent element of said deposited film, said method comprising the step of increasing the proportion of the amount of said gaseous starting material introduced relative to the amount of said gaseous halogenic oxidizing agent introduced in said reaction space.

摘要翻译： 一种通过向反应空间中引入用于形成沉积膜的气态原料和具有用于所述起始材料的氧化作用的特性的气态卤素氧化剂以在其间进行化学接触从而形成多个 前体，其包括在激发态的前体，并且在预先位于成膜空间中的基底上形成所述沉积膜，所述膜形成空间与所述反应空间空间连通，使用这些前体的至少一种前体作为所述沉积的构成元素的进料源 所述方法包括增加相对于引入所述反应空间的所述气态卤素氧化剂的量引入的所述气态原料的量的比例的步骤。

公开(公告)号：US4812331A

公开(公告)日：1989-03-14

申请号：US942210

申请日：1986-12-16

申请人： Masaaki Hirooka ,  Masao Ueki ,  Jun-Ichi Hanna ,  Isamu Shimizu

发明人： Masaaki Hirooka ,  Masao Ueki ,  Jun-Ichi Hanna ,  Isamu Shimizu

IPC分类号： H01L31/04 ,  C23C16/30 ,  C23C16/44 ,  C23C16/452 ,  H01L21/205 ,  H01L31/18 ,  C23C16/00

CPC分类号： H01L21/02546 ,  C23C16/301 ,  H01L21/0242 ,  H01L21/02543 ,  H01L21/02549 ,  H01L21/0262 ,  H01L31/184 ,  Y02E10/544

摘要： A method for forming a deposited film, which comprises introducing gaseous starting materials, containing group III and/or group V compound as the constituent element for formation of a deposited film and a gaseous halogenic oxidizing agent having the property of oxidation action on said starting materials into a reaction space to effect contact therebetween to thereby form a plural number of precursors containing precursors under excited state, and forming a deposited film of a substrate existing in a film-forming space with the use of at least one precursor of said precursors as the feeding source for the constituent element of the deposited film.

摘要翻译： 一种形成沉积膜的方法，包括引入含有III族和/或V族化合物的气态原料作为形成沉积膜的构成元素和具有氧化作用的气态卤化氧化剂在所述原料上 进入反应空间以实现它们之间的接触，从而在激发状态下形成含有前体的多个前体，并且使用至少一种所述前体的前体形成存在于成膜空间中的基板的沉积膜作为 为沉积薄膜的组成元素提供源。

公开(公告)号：US5470389A

公开(公告)日：1995-11-28

申请号：US212930

申请日：1994-03-15

申请人： Shunichi Ishihara ,  Junichi Hanna ,  Isamu Shimizu ,  Masaaki Hirooka

发明人： Shunichi Ishihara ,  Junichi Hanna ,  Isamu Shimizu ,  Masaaki Hirooka

IPC分类号： C23C16/452 ,  C23C16/00

CPC分类号： C23C16/452

摘要： An apparatus for forming a deposited film by introducing two or more kinds of gaseous starting materials for formation of a deposited film and a gaseous halogenic oxidizing agent having the property of oxidation action for said starting materials into a reaction space to effect chemical contact therebetween to thereby form a plural number of precursors including precursors under excited state, and forming a deposited film in a plurality of layers with different compositions on a substrate existing in a film forming space spatially communicated with said reaction space with the use of at least one precursor of the precursors as the feeding source for the constituent element of the deposited film, said apparatus comprising a plural number of gas introducing means of a multiple tubular structure for discharging into said reaction space said gaseous starting materials and said gaseous halogenic oxidizing agent through the discharging outlets, respectively, and permitting them to react with each other to form the precursors and means for preventing contact of precursors unnecessary for the desired film formation of the precursors with the substrate.

摘要翻译： 一种用于通过将用于形成沉积膜的两种或更多种气态起始材料和具有用于所述原料的氧化作用的气态卤素氧化剂引入反应空间以在其间进行化学接触而形成沉积膜的装置，由此 形成多个前体，其包括在激发态下的前体，并且在存在于与所述反应空间空间连通的成膜空间中的基底上形成具有不同组成的多个层的沉积膜，其中使用至少一种前体 前体作为沉积膜的构成元素的进料源，所述装置包括多个多管状结构的气体引入装置，用于通过排出口将所述气态原料和所述气态卤素氧化剂排放到所述反应空间中， 并允许他们作出反应 彼此形成前体和用于防止前体与基质的所需膜形成所必需的前体接触的装置。

公开(公告)号：US4824697A

公开(公告)日：1989-04-25

申请号：US2217

申请日：1987-01-12

申请人： Shunichi Ishihara ,  Masaaki Hirooka ,  Junichi Hanna ,  Isamu Shimizu

发明人： Shunichi Ishihara ,  Masaaki Hirooka ,  Junichi Hanna ,  Isamu Shimizu

IPC分类号： H01L31/04 ,  C23C16/02 ,  C23C16/452 ,  H01L21/205 ,  C23C16/22

CPC分类号： C23C16/02 ,  C23C16/452

摘要： A method for forming a deposited film by introducing the active species (A) formed by decomposition of a subjective starting material gas (A) which is the major flow rate component and the active species (B) formed by decomposition of an objective starting material gas (B) which is the minor flow rate component and the activated species (C) formed from a compound (C) separately from each other into a film forming space for formation of a deposited film on a substrate and permitting said active species (A) and active species (B) to chemically react with said activated species (C) to thereby form a deposited film on the substrate comprises forming a multi-layer structure film by varying the amount of said active species (B) introduced into the film forming space.

摘要翻译： 通过引入由主要原料气体（A）分解形成的活性物质（A）形成沉积膜的方法，所述主要原料气体（A）是通过目标原料气体分解形成的主流量分量和活性种类（B） （C），由化合物（C）形成的活性物质（C）彼此分离成用于在基材上形成沉积膜的成膜空间，并允许所述活性物质（A） 和活性物质（B）与所述活化物质（C）进行化学反应，从而在基材上形成沉积膜包括通过改变导入成膜空间的所述活性物质（B）的量来形成多层结构膜 。

公开(公告)号：US4822636A

公开(公告)日：1989-04-18

申请号：US942214

申请日：1986-12-16

申请人： Keishi Saitoh ,  Masaaki Hirooka ,  Junichi Hanna ,  Isamu Shimizu

发明人： Keishi Saitoh ,  Masaaki Hirooka ,  Junichi Hanna ,  Isamu Shimizu

IPC分类号： H01L31/04 ,  C23C16/30 ,  C23C16/44 ,  C23C16/452 ,  C23C16/48 ,  C23C16/50 ,  G03G5/08 ,  G03G5/082 ,  H01L21/205 ,  H01L31/02 ,  H01L31/075 ,  H01L31/18 ,  H01L31/20 ,  B05D5/06 ,  B05D5/12

CPC分类号： H01L21/02532 ,  G03G5/08278 ,  H01L21/02422 ,  H01L21/02425 ,  H01L21/0245 ,  H01L21/02505 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L31/075 ,  H01L31/202 ,  Y02E10/548 ,  Y02P70/521

摘要： A method for forming a deposited film by introducing a gaseous starting material for formation of a deposited film and a gaseous halogenic oxidizing agent having the property of oxidation action on said starting material separately from each other into a reaction space to form a deposited film according to a chemical reaction, which comprises activating previously a gaseous substance (D) for formation of a valence electron controller in an activation space to form an activated species and introducing said activated species into the reaction space to form a doped deposited film.

摘要翻译： 通过将用于形成沉积膜的气态原料和对所述原料具有氧化作用的气态卤素氧化剂彼此分开引入反应空间形成沉积膜形成沉积膜的方法，以形成沉积膜 化学反应，其包括先前激活用于在活化空间中形成价电子控制器的气态物质（D）以形成活化物质并将所述活化物质引入反应空间以形成掺杂的沉积膜。

公开(公告)号：US4812328A

公开(公告)日：1989-03-14

申请号：US945689

申请日：1986-12-23

申请人： Keishi Saitoh ,  Masaaki Hirooka ,  Junichi Hanna ,  Isamu Shimizu

发明人： Keishi Saitoh ,  Masaaki Hirooka ,  Junichi Hanna ,  Isamu Shimizu

IPC分类号： H01L31/04 ,  C23C16/24 ,  C23C16/30 ,  C23C16/44 ,  C23C16/452 ,  C23C16/48 ,  G03G5/08 ,  H01L21/205 ,  B05D5/12

CPC分类号： H01L21/02425 ,  C23C16/452 ,  H01L21/02422 ,  H01L21/0245 ,  H01L21/02532 ,  H01L21/0262

摘要： A method for forming a deposited film by introducing a gaseous starting material for formation of a deposited film and a gaseous halogenic oxidizing agent having the property of oxidation action on said starting material separately from each other into a reaction space to form a deposited film according to a chemical reaction, which comprises activating previously a gaseous substance (B) for formation of a band gap controller in an activation space to form an activated species and introducing said activated species into the reaction space to form a deposited film controlled in band gap on a substrate existing in the film forming space.

摘要翻译： 通过将用于形成沉积膜的气态原料和对所述原料具有氧化作用的气态卤素氧化剂彼此分开引入反应空间形成沉积膜形成沉积膜的方法，以形成沉积膜 化学反应，其包括先前激活用于在活化空间中形成带隙控制器的气态物质（B）以形成活化物质并将所述活化物质引入反应空间中以形成控制在带隙控制器上的沉积膜 存在于成膜空间中的基板。

公开(公告)号：US4798809A

公开(公告)日：1989-01-17

申请号：US938996

申请日：1986-12-08

申请人： Masaaki Hirooka ,  Shunichi Ishihara ,  Junichi Hanna ,  Isamu Shimizu

发明人： Masaaki Hirooka ,  Shunichi Ishihara ,  Junichi Hanna ,  Isamu Shimizu

IPC分类号： H01L31/04 ,  H01L31/0392 ,  H01L31/075 ,  H01L31/20 ,  H01L31/18 ,  H01L21/20

CPC分类号： H01L31/076 ,  H01L31/03921 ,  H01L31/075 ,  H01L31/202 ,  Y02E10/548 ,  Y02P70/521

摘要： An improved photoelectromotive force member having desired photoelectric conversion layer prepared by the use of a substance capable of contributing to form a deposited film and an electronically oxidizing agent in the absence of a plasma. A process and an apparatus for preparing the same.

摘要翻译： 具有通过使用能够有助于形成沉积膜的物质和不存在等离子体的电子氧化剂制备的所需光电转换层的改进的光电动势部件。 一种制备该方法的方法和装置。

公开(公告)号：US4657777A

公开(公告)日：1987-04-14

申请号：US821134

申请日：1986-01-22

申请人： Masaaki Hirooka ,  Shunichi Ishihara ,  Junichi Hanna ,  Isamu Shimizu

发明人： Masaaki Hirooka ,  Shunichi Ishihara ,  Junichi Hanna ,  Isamu Shimizu

IPC分类号： B05D7/24 ,  C23C16/22 ,  C23C16/505 ,  H01L21/205 ,  B05D3/06

CPC分类号： B05D1/60 ,  C23C16/22 ,  C23C16/505 ,  H01L21/0237 ,  H01L21/0245 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/0262 ,  B05D2518/10

摘要： A method for forming a deposited film is provided which comprises forming a gas atmosphere containing an active species (a) obtained by decomposition of a silicon halide represented by the formula Si.sub.n X.sub.2n+2 (n is an integer of 1 or more and X represents a halogen atom) and at least one compound selected from the group of the compounds (A) consisting of acyclic silanes, silanes having cyclic structures, silanes containing an alkyl group and halo-substituted derivatives thereof in a film forming space (A) where a silicon-containing film is to be formed on a desired substrate, and then carrying out at least one of (1) exciting discharging in said gas atmosphere and (2) giving heat energy to said gas atmosphere, thereby forming a silicon-containing deposited film.

摘要翻译： 提供了形成沉积膜的方法，其包括形成含有由式SinX2n + 2表示的卤化硅分解得到的活性种（a）的气体气氛（n为1以上的整数，X为卤素 原子）和在成膜空间（A）中的至少一种选自由无环硅烷，具有环状结构的硅烷，含有烷基的硅烷和卤素取代的衍生物组成的化合物（A）的化合物，其中硅 - （1）在所述气体气氛中激发放电中的至少一种，和（2）向所述气体气氛提供热能，由此形成含硅沉积膜中的至少一种。