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1.发明申请Optoelectronic Semiconductor Chip and Method for Adapting a Contact Structure for Electrically Contacting an Optoelectronic Semiconductor Chip 审中-公开光电半导体芯片及其适用于接触光电子半导体芯片的接触结构的方法公开(公告)号：US20120299049A1
公开(公告)日：2012-11-29
申请号：US13497733
申请日：2010-09-10
CPC分类号： H01L27/153 , G01R31/318516 , H01H85/0417 , H01H85/32 , H01L23/5256 , H01L25/0753 , H01L27/156 , H01L33/62 , H01L51/50 , H01L2224/73265 , H01L2924/00 , H01L2924/0002 , H02H3/046 , H03K17/74 , H03K19/17728 , H05B33/083 , H05B33/0893 , Y10T29/49204
摘要： An optoelectronic semiconductor chip has a first semiconductor functional region with a first terminal and a second terminal. A contact structure electrically contacts the optoelectronic semiconductor chip. The contact structure is connected electrically conductively to the first semiconductor functional region. The contact structure has a disconnectable conductor structure. An operating current path is established via the first terminal of the first semiconductor functional region and the second terminal if the conductor structure is not disconnected. This path is interrupted if the conductor structure is disconnected. Alternatively, an operating current path is established via the first terminal of the first semiconductor functional region and the second terminal if the conductor structure is disconnected. The conductor structure connects the first terminal to the second terminal and short circuits the first semiconductor functional region if the conductor structure is not disconnected.
摘要翻译： 光电子半导体芯片具有带有第一端子和第二端子的第一半导体功能区域。 接触结构与光电子半导体芯片电接触。 接触结构电连接到第一半导体功能区。 接触结构具有可断开的导体结构。 如果导体结构不断开，则通过第一半导体功能区域的第一端子和第二端子建立工作电流通路。 如果导体结构断开，则该路径中断。 或者，如果导体结构断开，则通过第一半导体功能区域的第一端子和第二端子建立工作电流路径。 如果导体结构未断开，则导体结构将第一端子连接到第二端子并使第一半导体功能区域短路。
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公开(公告)号：US08716724B2
公开(公告)日：2014-05-06
申请号：US13127328
申请日：2009-11-27
申请人： Norwin von Malm , Klaus Streubel , Patrick Rode , Karl Engl , Lutz Höppel , Jürgen Moosburger
发明人： Norwin von Malm , Klaus Streubel , Patrick Rode , Karl Engl , Lutz Höppel , Jürgen Moosburger
IPC分类号： H01L33/62
CPC分类号： H01L33/62 , H01L27/156 , H01L33/22 , H01L33/382 , H01L2924/0002 , H01L2924/00
摘要： An optoelectronic projection device which generates a predefined image during operation, including a semiconductor body having an active layer that generates electromagnetic radiation and a radiation exit side and is an imaging element of the projection device, wherein, to electrically contact the semiconductor body, a first contact layer and a second contact layer are arranged at a rear side of the semiconductor body, the rear side lying opposite the radiation exit side, and are electrically insulated from one another by a separating layer.
摘要翻译： 一种光电投影装置，其在工作期间产生预定图像，包括具有产生电磁辐射的有源层和辐射出射侧的半导体本体，并且是投影装置的成像元件，其中，与半导体本体电接触， 接触层和第二接触层设置在半导体本体的后侧，后侧与辐射出口侧相对，并且通过分离层彼此电绝缘。
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公开(公告)号：US09054016B2
公开(公告)日：2015-06-09
申请号：US13123421
申请日：2009-10-29
申请人： Jürgen Moosburger , Norwin von Malm , Patrick Rode , Lutz Höppel , Karl Engl
发明人： Jürgen Moosburger , Norwin von Malm , Patrick Rode , Lutz Höppel , Karl Engl
CPC分类号： H01L27/15 , H01L25/167 , H01L33/005 , H01L33/02 , H01L33/08 , H01L33/382 , H01L33/62 , H01L2924/0002 , H01L2933/0016 , H01L2924/00
摘要： A radiation-emitting semiconductor chip includes a carrier and a semiconductor body having a semiconductor layer sequence, wherein an emission region and a protective diode region are formed in the semiconductor body having the semiconductor layer sequence; the semiconductor layer sequence includes an active region that generates radiation, the active region being arranged between a first semiconductor layer and a second semiconductor layer; the first semiconductor layer is arranged on a side of the active region which faces away from the carrier; the emission region has a recess extending through the active region; the first semiconductor layer in the emission region is electrically conductively connected to a first connection layer, wherein the first connection layer extends in the recess from the first semiconductor layer toward the carrier; and the first connection layer in the protective diode region is electrically conductively connected to the second semiconductor layer.
摘要翻译： 辐射发射半导体芯片包括具有半导体层序列的载体和半导体本体，其中在具有半导体层序列的半导体主体中形成发光区域和保护二极管区域; 所述半导体层序列包括产生辐射的有源区，所述有源区布置在第一半导体层和第二半导体层之间; 第一半导体层布置在有源区的背离载体的一侧; 发射区域具有延伸穿过有源区域的凹部; 发射区域中的第一半导体层导电地连接到第一连接层，其中第一连接层在凹部中从第一半导体层朝向载体延伸; 并且保护二极管区域中的第一连接层与第二半导体层导电连接。
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公开(公告)号：US20110260205A1
公开(公告)日：2011-10-27
申请号：US13123421
申请日：2009-10-29
申请人： Jürgen Moosburger , Norwin Von Malm , Patrick Rode , Lutz Höppel , Karl Engl
发明人： Jürgen Moosburger , Norwin Von Malm , Patrick Rode , Lutz Höppel , Karl Engl
IPC分类号： H01L33/62
CPC分类号： H01L27/15 , H01L25/167 , H01L33/005 , H01L33/02 , H01L33/08 , H01L33/382 , H01L33/62 , H01L2924/0002 , H01L2933/0016 , H01L2924/00
摘要： A radiation-emitting semiconductor chip includes a carrier and a semiconductor body having a semiconductor layer sequence, wherein an emission region and a protective diode region are formed in the semiconductor body having the semiconductor layer sequence; the semiconductor layer sequence includes an active region that generates radiation, the active region being arranged between a first semiconductor layer and a second semiconductor layer; the first semiconductor layer is arranged on a side of the active region which faces away from the carrier; the emission region has a recess extending through the active region; the first semiconductor layer in the emission region is electrically conductively connected to a first connection layer, wherein the first connection layer extends in the recess from the first semiconductor layer toward the carrier; and the first connection layer in the protective diode region is electrically conductively connected to the second semiconductor layer.
摘要翻译： 辐射发射半导体芯片包括具有半导体层序列的载体和半导体本体，其中在具有半导体层序列的半导体主体中形成发光区域和保护二极管区域; 所述半导体层序列包括产生辐射的有源区，所述有源区布置在第一半导体层和第二半导体层之间; 第一半导体层布置在有源区的背离载体的一侧; 发射区域具有延伸穿过有源区域的凹部; 发射区域中的第一半导体层导电地连接到第一连接层，其中第一连接层在凹部中从第一半导体层朝向载体延伸; 并且保护二极管区域中的第一连接层与第二半导体层导电连接。
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公开(公告)号：US20140145610A1
公开(公告)日：2014-05-29
申请号：US13820181
申请日：2011-08-24
申请人： Patrick Rode , Norwin von Malm , Lutz Höppel
发明人： Patrick Rode , Norwin von Malm , Lutz Höppel
CPC分类号： F21K9/50 , F21K9/60 , F21V7/00 , F21V23/02 , F21V23/023 , F21Y2115/10 , H01L41/107
摘要： A light-emitting diode arrangement has a frame-shaped piezo transformer having at least one output-side connection, and having a light-emitting diode module that generates electromagnetic radiation, which module is disposed within the frame-shaped piezo transformer and electrically connects to the output-side connection of the piezo transformer by at least one output-side electrical conductor, wherein radiation emitted by the light-emitting diode module in the direction of the piezo transformer is reflected, at the latter.
摘要翻译： 发光二极管装置具有至少一个输出侧连接的框形压电变压器，并且具有产生电磁辐射的发光二极管模块，该模块设置在框形压电变压器内并电连接到 通过至少一个输出侧电导体的压电变压器的输出侧连接，其中由发光二极管模块在压电变压器的方向上发射的辐射在后者处被反射。
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公开(公告)号：US08816585B2
公开(公告)日：2014-08-26
申请号：US13820181
申请日：2011-08-24
申请人： Patrick Rode , Norwin von Malm , Lutz Höppel
发明人： Patrick Rode , Norwin von Malm , Lutz Höppel
IPC分类号： H01J7/44 , H01J13/46 , H01J17/34 , H01J19/78 , H01J23/16 , H01J29/96 , H01K1/62 , F21V23/02 , F21V7/00 , H01L41/107 , F21K99/00 , F21Y101/02
CPC分类号： F21K9/50 , F21K9/60 , F21V7/00 , F21V23/02 , F21V23/023 , F21Y2115/10 , H01L41/107
摘要： A light-emitting diode arrangement has a frame-shaped piezo transformer having at least one output-side connection, and having a light-emitting diode module that generates electromagnetic radiation, which module is disposed within the frame-shaped piezo transformer and electrically connects to the output-side connection of the piezo transformer by at least one output-side electrical conductor, wherein radiation emitted by the light-emitting diode module in the direction of the piezo transformer is reflected at the latter.
摘要翻译： 发光二极管装置具有至少一个输出侧连接的框形压电变压器，并且具有产生电磁辐射的发光二极管模块，该模块设置在框形压电变压器内并电连接到 压电变压器的输出侧连接由至少一个输出侧电导体，其中由发光二极管模块在压电变压器的方向上发射的辐射在后者处被反射。
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公开(公告)号：US20130043496A1
公开(公告)日：2013-02-21
申请号：US13522508
申请日：2011-01-17
申请人： Matthias Sabathil , Norwin von Malm , Lutz Hoeppel , Stefan Illek , Bernd Barchmann , Patrick Rode
发明人： Matthias Sabathil , Norwin von Malm , Lutz Hoeppel , Stefan Illek , Bernd Barchmann , Patrick Rode
IPC分类号： H01L33/08
CPC分类号： H01L25/0753 , H01L33/22 , H01L33/507 , H01L33/58 , H01L33/62 , H01L2924/0002 , H01L2924/00
摘要： A lighting device with front carrier, rear carrier and plurality of light-emitting diode chips, which when in operation emits light and releases waste heat, wherein rear carrier is covered at least in selected locations by front carrier, light-emitting diode chips are arranged between rear carrier and front carrier to form array, light-emitting diodes are contacted electrically by rear and/or front carrier and immobilized mechanically by rear carrier and front carrier, front carrier is coupled thermally conductively to light-emitting diode chips and includes light outcoupling face remote from light-emitting diode chips, which light outcoupling face releases some of waste heat released by light-emitting diode chips into surrounding environment, each light-emitting diode chip is actuated with electrical nominal power of 100 mW or less when lighting device is in operation and has light yield of 100 lm/W or more.
摘要翻译： 一种具有前载体，后载体和多个发光二极管芯片的照明装置，其在运行时发光并释放废热，其中后载体至少在前载体上被选定的位置覆盖，发光二极管芯片布置 在后载体和前载体之间形成阵列，发光二极管由后和/或前载体电接触并由后载体和前载体机械固定，前载体热传导耦合到发光二极管芯片，并且包括光输出耦合 面对远离发光二极管芯片的光输出耦合面将发光二极管芯片释放的一部分废热释放到周围环境中，当发光二极管芯片的照明装置为100mW或更小时，每个发光二极管芯片的功率为100mW 具有100 lm / W以上的光收率。
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公开(公告)号：US09029878B2
公开(公告)日：2015-05-12
申请号：US13522508
申请日：2011-01-17
申请人： Matthias Sabathil , Norwin von Malm , Lutz Hoeppel , Stefan Illek , Bernd Barchmann , Patrick Rode
发明人： Matthias Sabathil , Norwin von Malm , Lutz Hoeppel , Stefan Illek , Bernd Barchmann , Patrick Rode
CPC分类号： H01L25/0753 , H01L33/22 , H01L33/507 , H01L33/58 , H01L33/62 , H01L2924/0002 , H01L2924/00
摘要： A lighting device with front carrier, rear carrier and plurality of light-emitting diode chips, which when in operation emits light and releases waste heat, wherein rear carrier is covered at least in selected locations by front carrier, light-emitting diode chips are arranged between rear carrier and front carrier to form array, light-emitting diodes are contacted electrically by rear and/or front carrier and immobilized mechanically by rear carrier and front carrier, front carrier is coupled thermally conductively to light-emitting diode chips and includes light outcoupling face remote from light-emitting diode chips, which light outcoupling face releases some of waste heat released by light-emitting diode chips into surrounding environment, each light-emitting diode chip is actuated with electrical nominal power of 100 mW or less when lighting device is in operation and has light yield of 100 lm/W or more.
摘要翻译： 一种具有前载体，后载体和多个发光二极管芯片的照明装置，其在运行时发光并释放废热，其中后载体至少在前载体上被选定的位置覆盖，发光二极管芯片布置 在后载体和前载体之间形成阵列，发光二极管由后和/或前载体电接触并由后载体和前载体机械固定，前载体热传导耦合到发光二极管芯片，并且包括光输出耦合 面对远离发光二极管芯片的光输出耦合面将发光二极管芯片释放的一部分废热释放到周围环境中，当发光二极管芯片的照明装置为100mW或更小时，每个发光二极管芯片的功率为100mW 具有100 lm / W以上的光收率。
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9.发明申请公开(公告)号：US20130134881A1
公开(公告)日：2013-05-30
申请号：US13702347
申请日：2011-04-13
申请人： Norwin Von Malm , Hubert Maiwald , Robert Kraus , Patrick Rode , Ralph Wirth
发明人： Norwin Von Malm , Hubert Maiwald , Robert Kraus , Patrick Rode , Ralph Wirth
IPC分类号： H05B37/00
CPC分类号： H05B37/00 , F21K9/232 , F21K9/233 , F21V3/00 , F21V23/026 , F21V29/70 , F21V29/74 , F21V29/89 , F21Y2101/00 , F21Y2105/10 , F21Y2115/10 , H01L25/0753 , H01L33/08 , H01L33/62 , H01L33/647 , H01L41/044 , H01L41/107 , H01L2224/48091 , H01L2224/73265 , H05B33/0806 , H01L2924/00014 , H01L2924/00
摘要： A light-emitting diode arrangement includes a piezoelectric transformer having at least one output connection position, and a high-voltage light-emitting diode including a high-voltage light-emitting diode chip including at least two active regions connected in series with one another, wherein the high-voltage light-emitting diode is electrically connected to the output connection position of the piezo transformer.
摘要翻译： 发光二极管装置包括具有至少一个输出连接位置的压电变压器和包括高压发光二极管芯片的高压发光二极管，所述高压发光二极管芯片包括彼此串联连接的至少两个有源区域， 其中高压发光二极管电连接到压电变压器的输出连接位置。
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公开(公告)号：US20110241031A1
公开(公告)日：2011-10-06
申请号：US13127328
申请日：2009-11-27
申请人： Norwin von Malm , Klaus Streubel , Patrick Rode , Karl Engl , Lutz Hoppel , Jurgen Moosburger
发明人： Norwin von Malm , Klaus Streubel , Patrick Rode , Karl Engl , Lutz Hoppel , Jurgen Moosburger
IPC分类号： H01L33/62
CPC分类号： H01L33/62 , H01L27/156 , H01L33/22 , H01L33/382 , H01L2924/0002 , H01L2924/00
摘要： An optoelectronic projection device which generates a predefined image during operation, including a semiconductor body having an active layer that generates electromagnetic radiation and a radiation exit side and is an imaging element of the projection device, wherein, to electrically contact the semiconductor body, a first contact layer and a second contact layer are arranged at a rear side of the semiconductor body, the rear side lying opposite the radiation exit side, and are electrically insulated from one another by a separating layer.
摘要翻译： 一种光电投影装置，其在工作期间产生预定图像，包括具有产生电磁辐射的有源层和辐射出射侧的半导体本体，并且是投影装置的成像元件，其中，与半导体本体电接触， 接触层和第二接触层设置在半导体本体的后侧，后侧与辐射出口侧相对，并且通过分离层彼此电绝缘。
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