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公开(公告)号:US20060003547A1
公开(公告)日:2006-01-05
申请号:US10883614
申请日:2004-06-30
申请人: Mauro Kobrinsky , Shriram Ramanathan , Scott List
发明人: Mauro Kobrinsky , Shriram Ramanathan , Scott List
IPC分类号: H01L21/30
CPC分类号: H01L21/76885 , H01L2224/05181 , H01L2224/05186 , H01L2924/04953 , H01L2924/00014
摘要: The present invention discloses a method that includes: providing two wafers; forming raised contacts on the two wafers; aligning the two wafers; bringing together the raised contacts; locally deflecting the two wafers; and bonding the raised contacts. The present invention also discloses a bonded-wafer structure that includes: a first wafer, the first wafer being locally deflected, the first wafer including a first raised contact; and a second wafer, the second wafer being locally deflected, the second wafer including a second raised contact, wherein the second raised contact is bonded to the first raised contact.
摘要翻译: 本发明公开了一种方法,包括:提供两个晶片; 在两个晶片上形成凸起的接触; 对准两个晶片; 汇集联络人; 局部偏转两片晶片; 并且接合凸起的触点。 本发明还公开了一种接合晶片结构,其包括:第一晶片,所述第一晶片被局部偏转,所述第一晶片包括第一凸起接触; 和第二晶片,所述第二晶片局部偏转,所述第二晶片包括第二凸起接触件,其中所述第二凸起接触件接合到所述第一凸起接触件。
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公开(公告)号:US20070284409A1
公开(公告)日:2007-12-13
申请号:US11844293
申请日:2007-08-23
申请人: Mauro Kobrinsky , Shriram Ramanathan , Scott List
发明人: Mauro Kobrinsky , Shriram Ramanathan , Scott List
IPC分类号: H01L21/67
CPC分类号: H01L21/67092 , H01L21/76885 , H01L24/03 , H01L24/05 , H01L24/11 , H01L24/12 , H01L24/17 , H01L24/75 , H01L24/81 , H01L24/94 , H01L2224/0401 , H01L2224/05186 , H01L2224/05546 , H01L2224/05547 , H01L2224/0603 , H01L2224/1147 , H01L2224/1148 , H01L2224/13022 , H01L2224/13147 , H01L2224/1403 , H01L2224/16 , H01L2224/17 , H01L2224/75 , H01L2224/7511 , H01L2224/75252 , H01L2224/75314 , H01L2224/75315 , H01L2224/75317 , H01L2224/81011 , H01L2224/81012 , H01L2224/81013 , H01L2224/81121 , H01L2224/81209 , H01L2224/81801 , H01L2224/81895 , H01L2924/01005 , H01L2924/01006 , H01L2924/01007 , H01L2924/01014 , H01L2924/01015 , H01L2924/01018 , H01L2924/01019 , H01L2924/01023 , H01L2924/01029 , H01L2924/01033 , H01L2924/01049 , H01L2924/0105 , H01L2924/01073 , H01L2924/01074 , H01L2924/01078 , H01L2924/01082 , H01L2924/01084 , H01L2924/014 , H01L2924/04953 , H01L2924/05042 , H01L2924/10158 , H01L2924/14 , H01L2924/19042 , H01L2924/30105 , H01L2924/3511
摘要: The present invention discloses a method that includes: providing two wafers; forming raised contacts on the two wafers; aligning the two wafers; bringing together the raised contacts; locally deflecting the two wafers; and bonding the raised contacts. The present invention also discloses a bonded-wafer structure that includes: a first wafer, the first wafer being locally deflected, the first wafer including a first raised contact; and a second wafer, the second wafer being locally deflected, the second wafer including a second raised contact, wherein the second raised contact is bonded to the first raised contact.
摘要翻译: 本发明公开了一种方法,包括:提供两个晶片; 在两个晶片上形成凸起的接触; 对准两个晶片; 汇集联络人; 局部偏转两片晶片; 并且接合凸起的触点。 本发明还公开了一种接合晶片结构,其包括:第一晶片,所述第一晶片被局部偏转,所述第一晶片包括第一凸起接触; 和第二晶片,所述第二晶片局部偏转,所述第二晶片包括第二凸起接触件,其中所述第二凸起接触件接合到所述第一凸起接触件。
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公开(公告)号:US20050003650A1
公开(公告)日:2005-01-06
申请号:US10610743
申请日:2003-07-02
申请人: Shriram Ramanathan , Patrick Morrow , Scott List , Michael Chan , Mauro Kobrinsky , Sarah Kim , Kevin O'Brien , Michael Harmes , Thomas Marieb
发明人: Shriram Ramanathan , Patrick Morrow , Scott List , Michael Chan , Mauro Kobrinsky , Sarah Kim , Kevin O'Brien , Michael Harmes , Thomas Marieb
IPC分类号: H01L21/60 , H01L21/98 , H01L25/065 , H01L21/44 , H01L21/48 , H01L23/02 , H01L23/48 , H01L23/52
CPC分类号: H01L24/16 , H01L24/11 , H01L24/81 , H01L25/0657 , H01L25/50 , H01L2224/13099 , H01L2224/13147 , H01L2224/81205 , H01L2224/81801 , H01L2224/8183 , H01L2224/81894 , H01L2224/81895 , H01L2224/9202 , H01L2225/06513 , H01L2924/01005 , H01L2924/01006 , H01L2924/01012 , H01L2924/01013 , H01L2924/01022 , H01L2924/01024 , H01L2924/01027 , H01L2924/01029 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/01073 , H01L2924/01075 , H01L2924/01077 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/14 , H01L2924/19041
摘要: Three-dimensional stacked substrate arrangements with reliable bonding and inter-substrate protection.
摘要翻译: 具有可靠接合和衬底保护的三维堆叠衬底布置。
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公开(公告)号:US20060003548A1
公开(公告)日:2006-01-05
申请号:US10898400
申请日:2004-07-23
申请人: Mauro Kobrinsky , Shriram Ramanathan , Scott List
发明人: Mauro Kobrinsky , Shriram Ramanathan , Scott List
IPC分类号: H01L21/30
CPC分类号: H01L21/67092 , H01L21/76885 , H01L24/03 , H01L24/05 , H01L24/11 , H01L24/12 , H01L24/17 , H01L24/75 , H01L24/81 , H01L24/94 , H01L2224/0401 , H01L2224/05186 , H01L2224/05546 , H01L2224/05547 , H01L2224/0603 , H01L2224/1147 , H01L2224/1148 , H01L2224/13022 , H01L2224/13147 , H01L2224/1403 , H01L2224/16 , H01L2224/17 , H01L2224/75 , H01L2224/7511 , H01L2224/75252 , H01L2224/75314 , H01L2224/75315 , H01L2224/75317 , H01L2224/81011 , H01L2224/81012 , H01L2224/81013 , H01L2224/81121 , H01L2224/81209 , H01L2224/81801 , H01L2224/81895 , H01L2924/01005 , H01L2924/01006 , H01L2924/01007 , H01L2924/01014 , H01L2924/01015 , H01L2924/01018 , H01L2924/01019 , H01L2924/01023 , H01L2924/01029 , H01L2924/01033 , H01L2924/01049 , H01L2924/0105 , H01L2924/01073 , H01L2924/01074 , H01L2924/01078 , H01L2924/01082 , H01L2924/01084 , H01L2924/014 , H01L2924/04953 , H01L2924/05042 , H01L2924/10158 , H01L2924/14 , H01L2924/19042 , H01L2924/30105 , H01L2924/3511
摘要: The present invention discloses a method that includes: providing two wafers; forming raised contacts on the two wafers; aligning the two wafers; bringing together the raised contacts; locally deflecting the two wafers; and bonding the raised contacts. The present invention also discloses a bonded-wafer structure that includes: a first wafer, the first wafer being locally deflected, the first wafer including a first raised contact; and a second wafer, the second wafer being locally deflected, the second wafer including a second raised contact, wherein the second raised contact is bonded to the first raised contact.
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公开(公告)号:US07214605B2
公开(公告)日:2007-05-08
申请号:US10683202
申请日:2003-10-09
IPC分类号: H01L21/44
CPC分类号: H01L24/12 , H01L24/11 , H01L24/16 , H01L24/81 , H01L25/0657 , H01L2224/11822 , H01L2224/13099 , H01L2224/81191 , H01L2224/81193 , H01L2224/81801 , H01L2224/81894 , H01L2225/06513 , H01L2225/06527 , H01L2225/06582 , H01L2924/01027 , H01L2924/01029 , H01L2924/01033 , H01L2924/01078 , H01L2924/01082 , H01L2924/14
摘要: The invention provides a stacked wafer structure with decreased failures. In one embodiment, there is a barrier layer deposited on exposed surfaces of conductors that extend across a distance between first and second device structures. The barrier layer may prevent diffusion and electromigration of the conductor material, which may decrease incidences of shorts and voids in the stacked wafer structure.
摘要翻译: 本发明提供了具有降低的故障的堆叠晶片结构。 在一个实施例中,存在沉积在导体的暴露表面上的阻挡层,其延伸跨越第一和第二器件结构之间的距离。 阻挡层可以防止导体材料的扩散和电迁移,这可能降低层叠晶片结构中的短路和空隙的发生。
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公开(公告)号:US20110260319A1
公开(公告)日:2011-10-27
申请号:US13103267
申请日:2011-05-09
申请人: Shriram Ramanathan , Patrick Morrow , Scott List , Michael Y. Chan , Mauro J. Kobrinsky , Sarah E. Kim , Kevin P. O'Brien , Michael C. Harmes , Thomas Marieb
发明人: Shriram Ramanathan , Patrick Morrow , Scott List , Michael Y. Chan , Mauro J. Kobrinsky , Sarah E. Kim , Kevin P. O'Brien , Michael C. Harmes , Thomas Marieb
IPC分类号: H01L23/498
CPC分类号: H01L24/16 , H01L24/11 , H01L24/81 , H01L25/0657 , H01L25/50 , H01L2224/13099 , H01L2224/13147 , H01L2224/81205 , H01L2224/81801 , H01L2224/8183 , H01L2224/81894 , H01L2224/81895 , H01L2224/9202 , H01L2225/06513 , H01L2924/01005 , H01L2924/01006 , H01L2924/01012 , H01L2924/01013 , H01L2924/01022 , H01L2924/01024 , H01L2924/01027 , H01L2924/01029 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/01073 , H01L2924/01075 , H01L2924/01077 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/14 , H01L2924/19041
摘要: Three-dimensional stacked substrate arrangements with reliable bonding and inter-substrate protection.
摘要翻译: 具有可靠接合和衬底保护的三维堆叠衬底布置。
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公开(公告)号:US20120280387A1
公开(公告)日:2012-11-08
申请号:US13470822
申请日:2012-05-14
申请人: Shriram Ramanathan , Patrick Morrow , Scott List , Michael Y. Chan , Mauro J. Kobrinsky , Sarah E. Kim , Kevin P. O'Brien , Michael C. Harmes , Thomas Marieb
发明人: Shriram Ramanathan , Patrick Morrow , Scott List , Michael Y. Chan , Mauro J. Kobrinsky , Sarah E. Kim , Kevin P. O'Brien , Michael C. Harmes , Thomas Marieb
IPC分类号: H01L23/498
CPC分类号: H01L24/16 , H01L24/11 , H01L24/81 , H01L25/0657 , H01L25/50 , H01L2224/13099 , H01L2224/13147 , H01L2224/81205 , H01L2224/81801 , H01L2224/8183 , H01L2224/81894 , H01L2224/81895 , H01L2224/9202 , H01L2225/06513 , H01L2924/01005 , H01L2924/01006 , H01L2924/01012 , H01L2924/01013 , H01L2924/01022 , H01L2924/01024 , H01L2924/01027 , H01L2924/01029 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/01073 , H01L2924/01075 , H01L2924/01077 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/14 , H01L2924/19041
摘要: Three-dimensional stacked substrate arrangements with reliable bonding and inter-substrate protection.
摘要翻译: 具有可靠接合和衬底保护的三维堆叠衬底布置。
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公开(公告)号:US20090174070A1
公开(公告)日:2009-07-09
申请号:US12319035
申请日:2008-12-31
申请人: Shriram Ramanathan , Patrick Morrow , Scott List , Michael Y. Chan , Mauro J. Kobnnsky , Sarah E. Kim , Kevin P. O'Brien , Michael C. Harmes , Thomas Marieb
发明人: Shriram Ramanathan , Patrick Morrow , Scott List , Michael Y. Chan , Mauro J. Kobnnsky , Sarah E. Kim , Kevin P. O'Brien , Michael C. Harmes , Thomas Marieb
IPC分类号: H01L23/498
CPC分类号: H01L24/16 , H01L24/11 , H01L24/81 , H01L25/0657 , H01L25/50 , H01L2224/13099 , H01L2224/13147 , H01L2224/81205 , H01L2224/81801 , H01L2224/8183 , H01L2224/81894 , H01L2224/81895 , H01L2224/9202 , H01L2225/06513 , H01L2924/01005 , H01L2924/01006 , H01L2924/01012 , H01L2924/01013 , H01L2924/01022 , H01L2924/01024 , H01L2924/01027 , H01L2924/01029 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/01073 , H01L2924/01075 , H01L2924/01077 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/14 , H01L2924/19041
摘要: Three-dimensional stacked substrate arrangements with reliable bonding and inter-substrate protection.
摘要翻译: 具有可靠接合和衬底保护的三维堆叠衬底布置。
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公开(公告)号:US20050079685A1
公开(公告)日:2005-04-14
申请号:US10683202
申请日:2003-10-09
IPC分类号: H01L21/46 , H01L23/485 , H01L25/065
CPC分类号: H01L24/12 , H01L24/11 , H01L24/16 , H01L24/81 , H01L25/0657 , H01L2224/11822 , H01L2224/13099 , H01L2224/81191 , H01L2224/81193 , H01L2224/81801 , H01L2224/81894 , H01L2225/06513 , H01L2225/06527 , H01L2225/06582 , H01L2924/01027 , H01L2924/01029 , H01L2924/01033 , H01L2924/01078 , H01L2924/01082 , H01L2924/14
摘要: The invention provides a stacked wafer structure with decreased failures. In one embodiment, there is a barrier layer deposited on exposed surfaces of conductors that extend across a distance between first and second device structures. The barrier layer may prevent diffusion and electromigration of the conductor material, which may decrease incidences of shorts and voids in the stacked wafer structure.
摘要翻译: 本发明提供了具有降低的故障的堆叠晶片结构。 在一个实施例中,存在沉积在导体的暴露表面上的阻挡层,其延伸跨越第一和第二器件结构之间的距离。 阻挡层可以防止导体材料的扩散和电迁移,这可能降低层叠晶片结构中的短路和空隙的发生。
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公开(公告)号:US08421225B2
公开(公告)日:2013-04-16
申请号:US13470822
申请日:2012-05-14
申请人: Shriram Ramanathan , Patrick Morrow , Scott List , Michael Y. Chan , Mauro J. Kobrinsky , Sarah E. Kim , Kevin P. O'Brien , Michael C. Harmes , Thomas Marieb
发明人: Shriram Ramanathan , Patrick Morrow , Scott List , Michael Y. Chan , Mauro J. Kobrinsky , Sarah E. Kim , Kevin P. O'Brien , Michael C. Harmes , Thomas Marieb
CPC分类号: H01L24/16 , H01L24/11 , H01L24/81 , H01L25/0657 , H01L25/50 , H01L2224/13099 , H01L2224/13147 , H01L2224/81205 , H01L2224/81801 , H01L2224/8183 , H01L2224/81894 , H01L2224/81895 , H01L2224/9202 , H01L2225/06513 , H01L2924/01005 , H01L2924/01006 , H01L2924/01012 , H01L2924/01013 , H01L2924/01022 , H01L2924/01024 , H01L2924/01027 , H01L2924/01029 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/01073 , H01L2924/01075 , H01L2924/01077 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/14 , H01L2924/19041
摘要: Three-dimensional stacked substrate arrangements with reliable bonding and inter-substrate protection.
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