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公开(公告)号：US06669996B2
公开(公告)日：2003-12-30
申请号：US09900439
申请日：2001-07-06
IPC分类号： H05H110
摘要： A method of synthesizing metal doped carbon films by placing a substrate in a chamber with a selected amount of a metalorganic compound. An electron cyclotron resonance is applied to the chamber in order to vaporize the metalorganic compound. The resonance is applied to the chamber until a metal doped carbon film is formed. The metalorganic compound is preferably selected from the group consisting of an organic salt of ruthenium, palladium, gold or platinum.
摘要翻译： 一种通过将基板放置在具有选定量的金属有机化合物的室中来合成金属掺杂碳膜的方法。 将电子回旋加速器共振施加到室以便蒸发金属有机化合物。 将谐振施加到室，直到形成金属掺杂碳膜。 金属有机化合物优选选自钌，钯，金或铂的有机盐。
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公开(公告)号：US07597941B2
公开(公告)日：2009-10-06
申请号：US10937738
申请日：2004-09-09
CPC分类号： B82Y30/00 , D01F9/127 , Y10T428/2918
摘要： A method of synthesizing and controlling the internal diameters, conical angles, and morphology of tubular carbon nano/micro structures. Different morphologies can be synthesized included but not limited to cones, straight tubes, nozzles, cone-on-tube (funnels), tube-on-cone, cone-tube-cone, n-staged structures, multijunctioned tubes, Y-junctions, dumbbell (pinched morphology) and capsules. The process is based on changing the wetting behavior of a low melting metals such as gallium, indium, and aluminum with carbon using a growth environment of different gas phase chemistries. The described carbon tubular morphologies can be synthesized using any kind of gas phase excitation such as, but not limited to, microwave excitation, hot filament excitation, thermal excitation and Radio Frequency (RF) excitations. The depositions area is only limited by the substrate area in the equipment used and not limited by the process. The internal diameters of the carbon tubular structures can be varied from a few nm to as high as about 20 microns. The wall thickness is about 10-20 nm. The carbon tubular structures can be formed open on both ends are directly applicable to micro-fluidics. Gallium required for the growth of the carbon tubes can be supplied either as a thin film on the substrate or could be supplied through the gas phase with different precursors such as Tri-methyl gallium. Seamless Y-junctions with no internal obstructions can be synthesized without the need of templates. Multi-channeled junctions can also be synthesized without any internal obstructions. Gallium that partially fills the carbon structures can be removed from the tubes by simple heating in vacuum at temperature above 600°.
摘要翻译： 一种合成和控制管状碳纳米/微结构的内径，锥角和形态的方法。 可以合成不同的形态，但不限于锥体，直管，喷嘴，管中管（漏斗），锥管，锥管锥，n阶段结构，多功能管，Y形结， 哑铃（捏形态）和胶囊。 该方法基于使用不同气相化学的生长环境来改变低熔点金属如镓，铟和铝与碳的润湿行为。 所描述的碳管形态可以使用任何种类的气相激发合成，例如但不限于微波激发，热丝激发，热激发和射频（RF）激发。 沉积区仅受所用设备中的基材面积的限制，不受该方法的限制。 碳管状结构的内径可以从几nm变化到高达约20微米。 壁厚约为10-20nm。 碳管结构可以在两端形成开放直接适用于微流体。 碳管生长所需的镓可以作为薄膜提供在基底上，或者可以通过气相与诸如三甲基镓的不同前体一起提供。 无需模板即可合成无内部障碍物的无缝Y接头。 多通道结也可以合成而没有任何内部障碍物。 部分填充碳结构的镓可以通过在高于600℃的温度下在真空中简单加热而从管中除去。
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3.发明授权公开(公告)号：US07238232B1
公开(公告)日：2007-07-03
申请号：US10427747
申请日：2003-04-30
IPC分类号： C30B25/12
CPC分类号： C30B9/06 , C30B19/04 , C30B29/406
摘要： A synthesis route to grow textured thin film of gallium nitride on amorphous quartz substrates and on single crystalline substrates such as c-sapphire and polycrystalline substrates such as pyrolytic boron nitride (PBN), alumina and quartz using the dissolution of atomic nitrogen rather than molecular nitrogen to allow for growth at subatmospheric pressure.
摘要翻译： 在非晶石英衬底和单晶衬底如c-蓝宝石和多晶衬底（如热解氮化硼（PBN），氧化铝和石英）上生长氮化镓的织构化薄膜的合成途径，使用原子氮而不是分子氮 以允许在低于大气压的压力下生长。
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公开(公告)号：US07182812B2
公开(公告)日：2007-02-27
申请号：US10664072
申请日：2003-09-16
CPC分类号： C30B23/00 , C30B25/105 , C30B29/16 , C30B29/605
摘要： The bulk synthesis of highly crystalline noncatalytic low melting metals such as β-gallium oxide tubes, nanowires, and nanopaintbrushes is accomplished using molten gallium and microwave plasma containing a mixture of monoatomic oxygen and hydrogen. Gallium oxide nanowires were 20–100 nm thick and tens to hundreds of microns long. Transmission electron microscopy (TEM) revealed the nanowires to be highly crystalline and devoid of any structural defects. Results showed that multiple nucleation and growth of gallium oxide nanostructures can occur directly out of molten gallium exposed to appropriate composition of hydrogen and oxygen in the gas phase. These gallium oxide nanostructures are of particular interest for opto-electronic devices and catalytic applications.
摘要翻译： 使用含有单原子氧和氢的混合物的熔融镓和微波等离子体来实现高结晶非催化低熔点金属如β-氧化镓管，纳米线和纳米线的大量合成。 氧化镓纳米线的厚度为20-100nm，数十至数百微米。 透射电子显微镜（TEM）显示纳米线是高度结晶的，没有任何结构缺陷。 结果表明，氧化镓纳米结构的多次成核和生长可以直接从暴露于气相中氢和氧的合适组成的熔融镓中发生。 这些氧化镓纳米结构对于光电器件和催化应用是特别感兴趣的。
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公开(公告)号：US07241432B2
公开(公告)日：2007-07-10
申请号：US11515051
申请日：2006-09-01
IPC分类号： C01B15/14
CPC分类号： D01F9/08 , B82Y30/00 , B82Y40/00 , C04B35/62231 , C04B35/62295 , C04B2235/386 , C04B2235/6581 , C04B2235/6582 , C04B2235/667 , C04B2235/781 , C04B2235/785 , C04B2235/786 , D01F9/12
摘要： This invention presents a process to produce bulk quantities of nanowires of a variety of semiconductor materials. Large liquid gallium drops are used as sinks for the gas phase solute, generated in-situ facilitated by microwave plasma. To grow silicon nanowires for example, a silicon substrate covered with gallium droplets is exposed to a microwave plasma containing atomic hydrogen. A range of process parameters such as microwave power, pressure, inlet gas phase composition, were used to synthesize silicon nanowires as small as 4 nm (nanometers) in diameter and several micrometers long. As opposed to the present technology, the instant technique does not require creation of quantum sized liquid metal droplets to synthesize nanowires. In addition, it offers advantages such as lower growth temperature, better control over size and size distribution, better control over the composition and purity of the nanowires.
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公开(公告)号：US20120027955A1
公开(公告)日：2012-02-02
申请号：US12248731
申请日：2008-10-09
IPC分类号： H05H1/46 , C23C16/455
CPC分类号： H05H1/46 , B82Y30/00 , C01G1/02 , C01G9/00 , C01G9/02 , C01G9/03 , C01G19/02 , C01G23/047 , C01G23/07 , C01P2002/82 , C01P2004/16 , C01P2004/17 , C01P2004/64 , H01J37/32192 , H01J37/3244 , H01J37/32449 , H01J37/32834 , H05H2245/124
摘要： A reactor and method for production of nanostructures produces, for example, metal oxide nanowires or nanoparticles. The reactor includes a metal powder delivery system wherein the metal powder delivery system includes a funnel in communication with a dielectric tube; a plasma-forming gas inlet, whereby a plasma-forming gas is delivered substantially longitudinally into the dielectric tube; a sheath gas inlet, whereby a sheath gas is delivered into the dielectric tube; and a microwave energy generator coupled to the dielectric tube, whereby microwave energy is delivered into a plasma-forming gas. The method for producing nanostructures includes delivering a plasma-forming gas substantially longitudinally into a dielectric tube; delivering a sheath gas into the tube; forming a plasma from the plasma-forming gas by applying microwave energy to the plasma-forming gas; delivering a metal powder into the dielectric tube; and reacting the metal powder within the plasma to form metal oxide nanostructures.
摘要翻译： 用于生产纳米结构的反应器和方法产生例如金属氧化物纳米线或纳米颗粒。 反应器包括金属粉末输送系统，其中金属粉末输送系统包括与电介质管连通的漏斗; 等离子体形成气体入口，其中等离子体形成气体基本纵向地输送到电介质管中; 护套气体入口，其中护套气体被输送到电介质管中; 以及耦合到电介质管的微波能量发生器，由此将微波能量输送到等离子体形成气体中。 生产纳米结构的方法包括将等离子体形成气体基本纵向地输送到电介质管中; 将鞘气输送到管中; 通过向等离子体形成气体施加微波能量从等离子体形成气体形成等离子体; 将金属粉末输送到介质管中; 并使等离子体内的金属粉末反应形成金属氧化物纳米结构体。
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7.发明授权Growth of textured gallium nitride thin films and nanowires on polycrystalline substrates 有权纹理化氮化镓薄膜和纳米线在多晶衬底上的生长公开(公告)号：US07819974B2
公开(公告)日：2010-10-26
申请号：US11824934
申请日：2007-07-03
IPC分类号： C30B25/12
CPC分类号： C30B9/06 , C30B19/04 , C30B29/406
摘要： A synthesis route to grow textured thin film of gallium nitride on amorphous quartz substrates and on single crystalline substrates such as c-sapphire and polycrystalline substrates such as pyrolytic boron nitride (PBN), alumina and quartz using the dissolution of atomic nitrogen rather than molecular nitrogen to allow for growth at subatmospheric pressure.
摘要翻译： 在非晶石英衬底和单晶衬底如c-蓝宝石和多晶衬底（如热解氮化硼（PBN），氧化铝和石英）上生长氮化镓的织构化薄膜的合成途径，使用原子氮而不是分子氮 以允许在低于大气压的压力下生长。
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公开(公告)号：US07771689B2
公开(公告)日：2010-08-10
申请号：US10705687
申请日：2003-11-10
IPC分类号： C01B21/06
CPC分类号： C22C30/00 , C30B11/002 , C30B15/10 , C30B35/002 , Y10T428/12007 , Y10T428/12681
摘要： A process of synthesizing metal and metal nitride nanowires, the steps comprising of: forming a catalytic metal (such as gallium, and indium) on a substrate (such as fused silica quartz, pyrolytic boron nitride, alumina, and sapphire), heating the combination in a pressure chamber, adding gaseous reactant and/or solid metal source, applying sufficient microwave energy (or current in hot filament reactor) to activate the metal of interest (such as gold, copper, tungsten, and bismuth) and continuing the process until nanowires of the desired length are formed. The substrate may be fused silica quartz, the catalytic metal a gallium or indium metal, the gaseous reactant is nitrogen and/or hydrogen and the nanowires are tungsten nitride and/or tungsten.
摘要翻译： 合成金属和金属氮化物纳米线的方法，其步骤包括：在基底（如熔融石英石英，热解氮化硼，氧化铝和蓝宝石）上形成催化金属（如镓和铟），加热组合 在压力室中加入气体反应物和/或固体金属源，施加足够的微波能量（或热丝反应器中的电流）以激活感兴趣的金属（例如金，铜，钨和铋）并继续该过程直到 形成所需长度的纳米线。 衬底可以是熔融石英石英，催化金属是镓或铟金属，气体反应物是氮和/或氢，并且纳米线是氮化钨和/或钨。
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公开(公告)号：US07713352B2
公开(公告)日：2010-05-11
申请号：US11521084
申请日：2006-09-14
申请人： Mahendra Kumar Sunkara , Shashank Sharma , Hari Chandrasekaran , Hongwei Li , Sreeram Vaddiraju
发明人： Mahendra Kumar Sunkara , Shashank Sharma , Hari Chandrasekaran , Hongwei Li , Sreeram Vaddiraju
CPC分类号： C30B25/18 , C30B23/007 , C30B23/025 , C30B25/005 , Y10S977/72 , Y10S977/762 , Y10S977/809 , Y10S977/81 , Y10S977/825
摘要： A process is provided to produce bulk quantities of nanowires in a variety of semiconductor materials. Thin films and droplets of low-melting metals such as gallium, indium, bismuth, and aluminum are used to dissolve and to produce nanowires. The dissolution of solutes can be achieved by using a solid source of solute and low-melting metal, or using a vapor phase source of solute and low-melting metal. The resulting nanowires range in size from 1 nanometer up to 1 micron in diameter and lengths ranging from 1 nanometer to several hundred nanometers or microns. This process does not require the use of metals such as gold and iron in the form of clusters whose size determines the resulting nanowire size. In addition, the process allows for a lower growth temperature, better control over size and size distribution, and better control over the composition and purity of the nanowire produced therefrom.
摘要翻译： 提供了一种在各种半导体材料中产生大量纳米线的方法。 使用低熔点金属如镓，铟，铋和铝的薄膜和液滴来溶解和产生纳米线。 溶质的溶解可以通过使用溶质和低熔点金属的固体源，或使用溶质和低熔点金属的气相源来实现。 所得的纳米线的尺寸范围从1纳米直到1微米的直径和长度范围从1纳米到几百纳米或微米。 该方法不需要以尺寸决定所得纳米线尺寸的簇的形式使用诸如金和铁的金属。 此外，该方法允许较低的生长温度，更好地控制尺寸和尺寸分布，以及更好地控制由其制备的纳米线的组成和纯度。
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公开(公告)号：US06806228B2
公开(公告)日：2004-10-19
申请号：US09896834
申请日：2001-06-29
IPC分类号： B01J2104
CPC分类号： D01F9/08 , Y10T428/2918
摘要： A method of synthesizing semiconductor fibers by placement of gallium or indium metal on a desired substrate, placing the combination in a low pressure chamber at a vacuum from 100 mTorr to one atmosphere pressure in an atmosphere containing desired gaseous reactants, raising the temperature of the metal to a few degrees above its melting point by microwave excitation, whereby the reactants form fibers of the desired length.
摘要翻译： 一种通过将镓或铟金属放置在所需衬底上来合成半导体纤维的方法，将该组合置于低压室中，在真空中从100mTorr至一个大气压在含有所需气态反应物的气氛中，使金属的温度升高 通过微波激发高于其熔点几度，由此反应物形成所需长度的纤维。
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