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19 条记录 (耗时 0.024 秒)

    Method of synthesizing metal doped diamond-like carbon films
    1.
    发明授权
    Method of synthesizing metal doped diamond-like carbon films 失效
    合成金刚石类金刚石碳膜的方法

    公开(公告)号：US06669996B2

    公开(公告)日：2003-12-30

    申请号：US09900439

    申请日：2001-07-06

    申请人： Mayumi Ueno ,  Mahendra Kumar Sunkara

    发明人： Mayumi Ueno ,  Mahendra Kumar Sunkara

    IPC分类号： H05H110

    CPC分类号： C23C16/26 ,  C23C16/30

    摘要： A method of synthesizing metal doped carbon films by placing a substrate in a chamber with a selected amount of a metalorganic compound. An electron cyclotron resonance is applied to the chamber in order to vaporize the metalorganic compound. The resonance is applied to the chamber until a metal doped carbon film is formed. The metalorganic compound is preferably selected from the group consisting of an organic salt of ruthenium, palladium, gold or platinum.

    摘要翻译： 一种通过将基板放置在具有选定量的金属有机化合物的室中来合成金属掺杂碳膜的方法。 将电子回旋加速器共振施加到室以便蒸发金属有机化合物。 将谐振施加到室，直到形成金属掺杂碳膜。 金属有机化合物优选选自钌，钯，金或铂的有机盐。

    Ferroelectric memory device
    4.
    发明授权
    Ferroelectric memory device 失效
    铁电存储器件

    公开(公告)号：US07215567B2

    公开(公告)日：2007-05-08

    申请号：US11216078

    申请日：2005-09-01

    申请人： Masami Hashimoto ,  Takeshi Kijima ,  Junichi Karasawa ,  Mayumi Ueno

    发明人： Masami Hashimoto ,  Takeshi Kijima ,  Junichi Karasawa ,  Mayumi Ueno

    IPC分类号： G11C11/22

    CPC分类号： G11C11/22 ,  G11C11/223

    摘要： To provide a nondestructive-read ferroelectric memory capable of realizing high speed, high integration, and long service life.The present invention is provided with an MFSFET 100 having a ferroelectric thin film at its gate portion, word line 104, bit line 105, and bit line 106 so as to apply voltage equal to or higher than the coercive electric field of the ferroelectric thin film between the bit line 105 and the word line 104 at first write timing and apply voltage equal to or higher than the coercive electric field between the bit line 106 and the word line 104 at second write timing, and applies voltage equal to or lower than the coercive electric field of the ferroelectric thin film between the bit line 105 and the word line 104 at first read timing to detect the current flowing between the both bit lines, and applies voltage equal to or lower than the coercive electric field between the bit line 106 and the word line 104 at second read timing to detect the current flowing between the both bit lines.

    摘要翻译： 提供能够实现高速，高集成度，长使用寿命的非破坏性读取型铁电存储器。 本发明具有在栅极部分具有铁电薄膜的MFSFET100，字线104，位线105和位线106，以施加等于或高于铁电薄膜的矫顽电场的电压 在第一写入定时在位线105和字线104之间施加等于或高于位线106和字线104之间的矫顽电场的电压，并施加等于或小于 在第一读取定时，在位线105和字线104之间的铁电薄膜的矫顽电场，以检测在两个位线之间流动的电流，并施加等于或低于位线106之间的矫顽电场的电压 和第二读取定时的字线104，以检测在两个位线之间流动的电流。