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    LASER ANNEALING APPLICATIONS IN HIGH-EFFICIENCY SOLAR CELLS
    1.
    发明申请
    LASER ANNEALING APPLICATIONS IN HIGH-EFFICIENCY SOLAR CELLS 审中-公开
    激光退火在高效太阳能电池中的应用

    公开(公告)号：US20130164883A1

    公开(公告)日：2013-06-27

    申请号：US13303488

    申请日：2011-11-23

    申请人： Mehrdad M. Moslehi ,  Virendra V. Rana ,  Sean M. Seutter ,  Anand Deshpande

    发明人： Mehrdad M. Moslehi ,  Virendra V. Rana ,  Sean M. Seutter ,  Mitiku Getahun ,  Anand Deshpande

    IPC分类号： H01L31/18

    CPC分类号： H01L31/18 ,  B23K26/0006 ,  B23K26/0624 ,  B23K26/352 ,  B23K26/354 ,  B23K26/361 ,  B23K26/40 ,  B23K2103/16 ,  B23K2103/50 ,  B23K2103/56 ,  H01L31/022441 ,  H01L31/035281 ,  H01L31/068 ,  H01L31/0682 ,  H01L31/1804 ,  H01L31/1864 ,  H01L31/1896 ,  Y02E10/547 ,  Y02P70/521

    摘要： Various laser processing schemes are disclosed for producing various types of hetero-junction and homo-junction solar cells. The methods include base and emitter contact opening, selective doping, metal ablation, annealing to improve passivation, and selective emitter doping via laser heating of aluminum. Also, laser processing schemes are disclosed that are suitable for selective amorphous silicon ablation and selective doping for hetero-junction solar cells. Laser ablation techniques are disclosed that leave the underlying silicon substantially undamaged. These laser processing techniques may be applied to semiconductor substrates, including crystalline silicon substrates, and further including crystalline silicon substrates which are manufactured either through wire saw wafering methods or via epitaxial deposition processes, or other cleavage techniques such as ion implantation and heating, that are either planar or textured/three-dimensional. These techniques are highly suited to thin crystalline semiconductor, including thin crystalline silicon films.

    摘要翻译： 公开了用于生产各种类型的异质结和同质结太阳能电池的各种激光处理方案。 这些方法包括基极和发射极接触开口，选择性掺杂，金属烧蚀，退火以改善钝化，以及通过激光加热铝的选择性发射极掺杂。 此外，公开了适用于异质结太阳能电池的选择性非晶硅消融和选择性掺杂的激光处理方案。 公开了激光烧蚀技术，使基底硅基本上没有损坏。 这些激光处理技术可以应用于包括晶体硅衬底的半导体衬底，并且还包括通过线锯晶片化方法或经由外延沉积工艺或诸如离子注入和加热的其它切割技术制造的晶体硅衬底，其是 平面或纹理/三维。 这些技术非常适用于薄晶体半导体，包括薄晶体硅薄膜。

    Patterning of silicon oxide layers using pulsed laser ablation
    6.
    发明授权
    Patterning of silicon oxide layers using pulsed laser ablation 有权
    使用脉冲激光烧蚀对氧化硅层进行图案化

    公开(公告)号：US08637340B2

    公开(公告)日：2014-01-28

    申请号：US13340877

    申请日：2011-12-30

    申请人： Mehrdad M. Moslehi ,  Virendra V. Rana ,  Pranav Anbalagan ,  Vivek Saraswat

    发明人： Mehrdad M. Moslehi ,  Virendra V. Rana ,  Pranav Anbalagan ,  Vivek Saraswat

    IPC分类号： H01L21/00 ,  H01L31/00

    CPC分类号： H01L31/02366 ,  B23K26/066 ,  B23K26/073 ,  B23K26/364 ,  B23K26/40 ,  B23K26/402 ,  B23K2103/172 ,  B23K2103/50 ,  H01L31/02167 ,  H01L31/022441 ,  H01L31/02363 ,  H01L31/035281 ,  H01L31/0445 ,  H01L31/056 ,  H01L31/068 ,  H01L31/0682 ,  H01L31/18 ,  H01L31/1804 ,  H01L31/186 ,  H01L31/1896 ,  Y02E10/52 ,  Y02E10/547 ,  Y02P70/521

    摘要： Various laser processing schemes are disclosed for producing various types of hetero-junction and homo-junction solar cells. The methods include base and emitter contact opening, selective doping, metal ablation, annealing to improve passivation, and selective emitter doping via laser heating of aluminum. Also, laser processing schemes are disclosed that are suitable for selective amorphous silicon ablation and selective doping for hetero-junction solar cells. Laser ablation techniques are disclosed that leave the underlying silicon substantially undamaged. These laser processing techniques may be applied to semiconductor substrates, including crystalline silicon substrates, and further including crystalline silicon substrates which are manufactured either through wire saw wafering methods or via epitaxial deposition processes, or other cleavage techniques such as ion implantation and heating, that are either planar or textured/three-dimensional. These techniques are highly suited to thin crystalline semiconductor, including thin crystalline silicon films.

    摘要翻译： 公开了用于生产各种类型的异质结和同质结太阳能电池的各种激光处理方案。 这些方法包括基极和发射极接触开口，选择性掺杂，金属烧蚀，退火以改善钝化，以及通过激光加热铝的选择性发射极掺杂。 此外，公开了适用于异质结太阳能电池的选择性非晶硅消融和选择性掺杂的激光处理方案。 公开了激光烧蚀技术，使基底硅基本上没有损坏。 这些激光处理技术可以应用于包括晶体硅衬底的半导体衬底，并且还包括通过线锯晶片化方法或经由外延沉积工艺或诸如离子注入和加热的其它切割技术制造的晶体硅衬底，其是 平面或纹理/三维。 这些技术非常适用于薄晶体半导体，包括薄晶体硅薄膜。

    LASER ANNEALING FOR ALUMINUM DOPING AND FORMATION OF BACK-SURFACE FIELD IN SOLAR CELL CONTACTS
    9.
    发明申请
    LASER ANNEALING FOR ALUMINUM DOPING AND FORMATION OF BACK-SURFACE FIELD IN SOLAR CELL CONTACTS 有权
    太阳能电池联系人的铝合金激光退火和背面表面形成

    公开(公告)号：US20120178203A1

    公开(公告)日：2012-07-12

    申请号：US13340903

    申请日：2011-12-30

    申请人： Mehrdad M. Moslehi ,  Virendra V. Rana ,  Pranav Anbalagan

    发明人： Mehrdad M. Moslehi ,  Virendra V. Rana ,  Pranav Anbalagan

    IPC分类号： H01L31/0236 ,  H01L31/0224 ,  H01L21/22

    CPC分类号： H01L31/1804 ,  H01L21/2254 ,  H01L21/268 ,  H01L31/022441 ,  H01L31/02363 ,  H01L31/068 ,  H01L31/0682 ,  H01L31/072 ,  H01L31/1864 ,  H01L31/1892 ,  H01L31/1896 ,  Y02E10/547 ,  Y02P70/521

    摘要： Various laser processing schemes are disclosed for producing various types of hetero junction and homo-junction solar cells. The methods include base and emitter contact opening, selective doping, metal ablation, annealing to improve passivation, and selective emitter doping via laser heating of aluminum. Also, laser processing schemes are disclosed that are suitable for selective amorphous silicon ablation and selective doping for hetero junction solar cells. Laser ablation techniques are disclosed that leave the underlying silicon substantially undamaged. These laser processing techniques may be applied to semiconductor substrates, including crystalline silicon substrates, and further including crystalline silicon substrates which are manufactured either through wire saw wafering methods or via epitaxial deposition processes, or other cleavage techniques such as ion implantation and heating, that are either planar or textured/three-dimensional. These techniques are highly suited to thin crystalline semiconductor, including thin crystalline silicon films.

    摘要翻译： 公开了用于产生各种类型的异质结和同质结太阳能电池的各种激光处理方案。 这些方法包括基极和发射极接触开口，选择性掺杂，金属烧蚀，退火以改善钝化，以及通过激光加热铝的选择性发射极掺杂。 此外，公开了适用于异质结太阳能电池的选择性非晶硅消融和选择性掺杂的激光加工方案。 公开了激光烧蚀技术，使基底硅基本上没有损坏。 这些激光处理技术可以应用于包括晶体硅衬底的半导体衬底，并且还包括通过线锯晶片化方法或经由外延沉积工艺或诸如离子注入和加热的其它切割技术制造的晶体硅衬底，其是 平面或纹理/三维。 这些技术非常适用于薄晶体半导体，包括薄晶体硅薄膜。

    HIGH-THROUGHPUT FLAT TOP LASER BEAM PROCESSING FOR BACK CONTACT SOLAR CELLS
    10.
    发明申请
    HIGH-THROUGHPUT FLAT TOP LASER BEAM PROCESSING FOR BACK CONTACT SOLAR CELLS 有权
    用于背面接触太阳能电池的高强度平板顶部激光束处理

    公开(公告)号：US20120122272A1

    公开(公告)日：2012-05-17

    申请号：US13271212

    申请日：2011-10-11

    申请人： Virendra V. Rana ,  Pranav Anbalagan ,  Mehrdad M. Moslehi

    发明人： Virendra V. Rana ,  Pranav Anbalagan ,  Mehrdad M. Moslehi

    IPC分类号： H01L31/18

    CPC分类号： H01L31/0463 ,  B23K26/364 ,  B23K26/40 ,  B23K2103/172 ,  B23K2103/50 ,  H01L31/02168 ,  H01L31/022441 ,  H01L31/02363 ,  H01L31/035281 ,  H01L31/0445 ,  H01L31/046 ,  H01L31/056 ,  H01L31/068 ,  H01L31/0682 ,  H01L31/18 ,  H01L31/1804 ,  H01L31/1896 ,  Y02E10/52 ,  Y02E10/547 ,  Y02P70/521

    摘要： Flat top beam laser processing schemes are disclosed for producing various types of hetero-junction and homo-junction solar cells. The methods include base and emitter contact opening, back surface field formation, selective doping, and metal ablation. Also, laser processing schemes are disclosed that are suitable for selective amorphous silicon ablation and selective doping for hetero-junction solar cells. These laser processing techniques may be applied to semiconductor substrates, including crystalline silicon substrates, and further including crystalline silicon substrates which are manufactured either through wire saw wafering methods or via epitaxial deposition processes, that are either planar or textured/three-dimensional. These techniques are highly suited to thin crystalline semiconductor, including thin crystalline silicon films.

    摘要翻译： 公开了平顶光束激光加工方案，用于生产各种类型的异质结和同态太阳能电池。 这些方法包括基极和发射极接触开口，背面场形成，选择性掺杂和金属烧蚀。 此外，公开了适用于异质结太阳能电池的选择性非晶硅消融和选择性掺杂的激光处理方案。 这些激光处理技术可以应用于包括晶体硅衬底的半导体衬底，并且还包括通过线锯晶片化方法或通过外延沉积工艺制造的晶体硅衬底，其是平面的或纹理的/三维的。 这些技术非常适用于薄晶体半导体，包括薄晶体硅薄膜。