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    SYSTEMS AND METHODS FOR DELIVERY OF FLUID-CONTAINING PROCESS MATERIAL COMBINATIONS
    7.
    发明申请
    SYSTEMS AND METHODS FOR DELIVERY OF FLUID-CONTAINING PROCESS MATERIAL COMBINATIONS 失效
    用于输送含流体过程材料组合的系统和方法

    公开(公告)号：US20110008964A1

    公开(公告)日：2011-01-13

    申请号：US12745748

    申请日：2008-12-08

    申请人： John E.Q. Hughes ,  Donald D. Ware ,  Steven M. Lurcott ,  Peter Wrschka

    发明人： John E.Q. Hughes ,  Donald D. Ware ,  Steven M. Lurcott ,  Peter Wrschka

    IPC分类号： H01L21/306 ,  F15D1/00 ,  B67D7/00

    CPC分类号： H01L21/3212 ,  B24B57/02 ,  H01L21/6715 ,  Y10T137/2499 ,  Y10T137/4807 ,  Y10T137/8593

    摘要： Common sources of different (e.g., concentrated) process materials are controllably supplied to multiple blending manifolds associated with multiple process tools, processing stations, or other points of use, to create an independently controllable process material blend for each tool, station, or point of use. Multi-constituent process materials may be circulated from a supply container through a blending manifold to a return container to ensure homogeneity until immediately prior to blending and use. Such containers may include liner-based containers adapted for pressure dispensation.

    摘要翻译： 不同（例如，浓缩）工艺材料的常见来源可控地供应到与多个工艺工具，加工站或其他使用点相关联的多个混合歧管，以创建用于每个工具，工位或点的 使用。 多组分加工材料可以从供应容器通过混合歧管循环到返回容器，以确保在混合和使用之前的均匀性。 这种容器可以包括适于压力分配的基于衬垫的容器。

    High throughput chemical mechanical polishing composition for metal film planarization
    9.
    发明授权
    High throughput chemical mechanical polishing composition for metal film planarization 失效
    用于金属膜平面化的高通量化学机械抛光组合物

    公开(公告)号：US08304344B2

    公开(公告)日：2012-11-06

    申请号：US12026414

    申请日：2008-02-05

    申请人： Karl E. Boggs ,  Michael S. Darsillo ,  Peter Wrschka ,  James Welch

    发明人： Karl E. Boggs ,  Michael S. Darsillo ,  Peter Wrschka ,  James Welch

    IPC分类号： H01L21/302

    CPC分类号： C09G1/02 ,  B24B37/044 ,  H01L21/3212

    摘要： A chemical mechanical polishing process including a single copper removal CMP slurry formulation for planarization of a microelectronic device structure preferably having copper deposited thereon. The process includes the bulk removal of a copper layer using a first CMP slurry formulation having oxidizing agent, passivating agent, abrasive and solvent, and the soft polishing and over-polishing of the microelectronic device structure using a formulation including the first CMP slurry formulation and at least one additional additive. The CMP process described herein provides a high copper removal rate, a comparatively low barrier material removal rate, appropriate material selectivity ranges to minimize copper dishing at the onset of barrier material exposure, and good planarization efficiency.

    摘要翻译： 化学机械抛光方法，其包括用于平坦化微电子器件结构的单一铜去除CMP浆料制剂，优选在其上沉积铜。 该方法包括使用具有氧化剂，钝化剂，研磨剂和溶剂的第一CMP浆料制剂以及使用包括第一CMP浆料配方的制剂对微电子器件结构进行软抛光和过度抛光的铜层的大量去除， 至少一种附加添加剂。 本文所述的CMP方法提供了高的铜去除速率，较低的屏障材料去除速率，适当的材料选择性范围，以使阻挡材料暴露开始时的铜凹陷最小化以及良好的平坦化效率。