公开(公告)号：US6064362A

公开(公告)日：2000-05-16

申请号：US848132

申请日：1997-04-28

申请人： Michael James Brownlow ,  Toshio Nomura ,  Yasushi Kubota ,  Masahiro Adachi

发明人： Michael James Brownlow ,  Toshio Nomura ,  Yasushi Kubota ,  Masahiro Adachi

IPC分类号： G02F1/136 ,  G02F1/133 ,  G02F1/1362 ,  G02F1/1368 ,  G09G3/36 ,  G09G5/00

CPC分类号： G02F1/13624 ,  G09G3/3648 ,  G02F2202/104 ,  G09G2300/0833 ,  G09G2300/0842 ,  G09G2320/0214 ,  G09G2320/0247

摘要： An active matrix liquid crystal display includes a rectangular array of picture elements driven by data and scan drivers. Each picture element includes a liquid crystal display element connected to the output of a unity gain buffer amplifier. The input of the amplifier is connected to a hold capacitor and to series connected gate transistors. The gates of the transistors are connected to a scan electrode and the transistors are connected in series between a data electrode and the input of the amplifier. The output of the amplifier is connected to the connection between the transistors.

摘要翻译： 有源矩阵液晶显示器包括由数据和扫描驱动器驱动的图形元素的矩形阵列。 每个像素包括连接到单位增益缓冲放大器的输出的液晶显示元件。 放大器的输入端连接到保持电容器和串联连接的栅极晶体管。 晶体管的栅极连接到扫描电极，晶体管串联连接在数据电极和放大器的输入端之间。 放大器的输出端连接到晶体管之间的连接。

公开(公告)号：US5808595A

公开(公告)日：1998-09-15

申请号：US674601

申请日：1996-06-28

申请人： Yasushi Kubota ,  Masahiro Adachi ,  Hiromi Sakamoto ,  Narihiro Morosawa

发明人： Yasushi Kubota ,  Masahiro Adachi ,  Hiromi Sakamoto ,  Narihiro Morosawa

IPC分类号： G02F1/136 ,  G02F1/133 ,  G02F1/1345 ,  G02F1/1368 ,  G09G3/36 ,  H01L27/12 ,  H01L29/786

CPC分类号： H01L29/78648 ,  G09G3/3677 ,  G09G3/3688 ,  G09G2300/0408 ,  G09G2300/043 ,  G09G2310/027

摘要： A thin-film transistor circuit, which is used as a driving circuit for driving pixels in an image display, is constituted of a plurality of thin-film transistors that are formed on an insulating substrate. In each thin-film transistor, a conductive electrode is placed so as to face a gate electrode with a channel region of a polycrystal silicon thin-film that forms an active layer located in between. Here, a constant voltage is applied to the conductive electrode. When threshold voltage is shifted by applying a voltage to the conductive electrode, it is possible to allow the absolute value of the threshold voltage of n-channel-type transistors and the absolute value of the threshold voltage of p-channel-type transistors to become virtually equal to each other. Moreover, it is possible to properly set the threshold voltage in accordance with factors such as the channel length of the thin-film transistors, the types of circuits that are constituted of the thin-film transistors and voltages to be applied to the thin-film transistors. Thus, it becomes possible to remarkably improve the characteristics of thin-film transistor circuits, such as operation speeds and holding characteristics.

摘要翻译： 作为用于驱动图像显示中的像素的驱动电路的薄膜晶体管电路由形成在绝缘基板上的多个薄膜晶体管构成。 在每个薄膜晶体管中，导电电极被放置成面对具有形成位于其间的有源层的多晶硅薄膜的沟道区的栅电极。 这里，向导电电极施加恒定电压。 当通过向导电电极施加电压来移动阈值电压时，可以允许n沟道型晶体管的阈值电压的绝对值和p沟道型晶体管的阈值电压的绝对值成为 几乎相等。 此外，可以根据诸如薄膜晶体管的沟道长度，由薄膜晶体管构成的电路的类型和施加到薄膜的电压等因素来适当地设置阈值电压 晶体管。 因此，可以显着提高诸如操作速度和保持特性的薄膜晶体管电路的特性。

公开(公告)号：US08927962B2

公开(公告)日：2015-01-06

申请号：US13055690

申请日：2010-02-26

申请人： Masaki Ueno ,  Yusuke Yoshizumi ,  Yohei Enya ,  Takashi Kyono ,  Katsushi Akita ,  Takamichi Sumitomo ,  Masahiro Adachi ,  Shinji Tokuyama

发明人： Masaki Ueno ,  Yusuke Yoshizumi ,  Yohei Enya ,  Takashi Kyono ,  Katsushi Akita ,  Takamichi Sumitomo ,  Masahiro Adachi ,  Shinji Tokuyama

IPC分类号： H01L29/66 ,  H01L33/32 ,  H01S5/343 ,  B82Y20/00 ,  H01L33/16 ,  H01S5/32

CPC分类号： H01S5/34333 ,  B82Y20/00 ,  H01L33/16 ,  H01L33/32 ,  H01L33/325 ,  H01S5/3202

摘要： A group III nitride semiconductor optical device 11a has a group III nitride semiconductor substrate 13 having a main surface 13a forming a finite angle with a reference plane Sc orthogonal to a reference axis Cx extending in a c-axis direction of the group III nitride semiconductor and an active layer 17 of a quantum-well structure, disposed on the main surface 13a of the group III nitride semiconductor substrate 13, including a well layer 28 made of a group III nitride semiconductor and a plurality of barrier layers 29 made of a group III nitride semiconductor. The main surface 13a exhibits semipolarity. The active layer 17 has an oxygen content of at least 1×1017 cm−3 but not exceeding 8×1017 cm−3. The plurality of barrier layers 29 contain an n-type impurity other than oxygen by at least 1×1017 cm−3 but not exceeding 1×1019 cm−3 in an upper near-interface area 29u in contact with a lower interface 28Sd of the well layer 28 on the group III nitride semiconductor substrate side.

摘要翻译： III族氮化物半导体光学元件11a具有III族氮化物半导体衬底13，该III族氮化物半导体衬底13具有与在III族氮化物半导体的c轴方向上延伸的参考轴Cx正交的参考平面Sc形成有限角度的主表面13a; 设置在III族氮化物半导体衬底13的主表面13a上的量子阱结构的有源层17，包括由III族氮化物半导体制成的阱层28和由III族组成的多个势垒层29 氮化物半导体。 主表面13a具有半极性。 活性层17的氧含量至少为1×1017cm-3，但不超过8×1017cm-3。 多个势垒层29在上接近界面区域29u中含有除氧之外的至少1×1017cm-3但不超过1×1019cm-3的n型杂质，该上接近界面区29u与下界面28Sd接触 III族氮化物半导体衬底侧的阱层28。

公开(公告)号：US20110291673A1

公开(公告)日：2011-12-01

申请号：US13147798

申请日：2010-02-08

申请人： Yoshinori Shibata ,  Masahiro Adachi

发明人： Yoshinori Shibata ,  Masahiro Adachi

IPC分类号： G01R27/28 ,  H01L29/66

CPC分类号： G01N27/4145 ,  G01N27/4148

摘要： Provided is a chemical sensor requiring no ion-sensitive film. Specifically provided is a chemical sensor (1) for detecting a sample base material (19) to be detected in a sample, the chemical sensor (1) including: a sensor TFT (7) of sensor TFTs (7) each of which has a glass substrate (8) and, on the glass substrate (8), a gate electrode (10), a gate oxide film (11), a silicon layer (12), a source electrode (14), and a drain electrode (15), the silicon layer (12) having a channel region (18) at an opening portion between the source electrode (14) and the drain electrode (15); and extracting signal lines PAS1 to PASn and a sensor signal amplifying and extracting circuit (24) that extract a leak current that is generated in the channel region (18).

摘要翻译： 提供了不需要离子敏感膜的化学传感器。 具体地提供一种用于检测样品中要检测的样品基材（19）的化学传感器（1），所述化学传感器（1）包括：传感器TFT（7）的传感器TFT（7），每个传感器TFT具有 玻璃基板（8），并且在玻璃基板（8）上具有栅电极（10），栅极氧化膜（11），硅层（12），源电极（14）和漏电极（15） ），所述硅层（12）在所述源电极（14）和所述漏电极（15）之间的开口部分具有沟道区（18）; 以及提取信号线PAS1〜PASn和提取在通道区域（18）中产生的泄漏电流的传感器信号放大和提取电路（24）。

公开(公告)号：US20110221707A1

公开(公告)日：2011-09-15

申请号：US13129103

申请日：2009-06-25

申请人： Kei Oyobe ,  Masahiro Adachi

发明人： Kei Oyobe ,  Masahiro Adachi

IPC分类号： G06F3/042

CPC分类号： G06F3/0412 ,  G02F1/13338 ,  G06F3/042 ,  G09G3/3648 ,  G09G2354/00 ,  G09G2360/147

摘要： A plurality of pixel circuits are provided on a TFT-side substrate 11, light blocking layers 15 and light blocking layer openings 16 are provided between the pixel circuits, and optical sensors 17 are arranged at positions where the light blocking layers 15 are provided. Light blocking layers 18 are also provided at opposing portions of the opposite substrate 12, and light reflecting units 19 are provided correspondingly to the optical sensors 17. In the normal state, backlight BL that has passed through the TFT-side substrate 11 is reflected by the light reflecting unit 19 and falls on the optical sensor 17. When the front surface of the liquid crystal panel is pressed, the two substrates come close to each other, the light reflection direction in the light reflecting unit 19 changes, and the intensity of light detected by the optical sensor 17 changes. By subjecting the obtained sensor image to an image recognition process, it is possible to eliminate the effect of the external light and detect the touch position on the display screen with high accuracy.

摘要翻译： 在TFT侧基板11上设置多个像素电路，在像素电路之间设置有遮光层15和遮光层开口16，并且在设置有遮光层15的位置配置有光学传感器17。 遮光层18也设置在相对基板12的相对部分处，并且光反射单元19对应于光学传感器17设置。在正常状态下，已经通过TFT侧基板11的背光BL被 光反射单元19落在光学传感器17上。当按压液晶面板的前表面时，两个基板彼此靠近，光反射单元19中的光反射方向变化，并且强度 由光学传感器17检测到的光改变。 通过对获得的传感器图像进行图像识别处理，可以消除外部光的影响并且以高精度检测显示屏上的触摸位置。

公开(公告)号：US07960918B2

公开(公告)日：2011-06-14

申请号：US11992592

申请日：2008-02-04

申请人： Masahiro Adachi ,  Yutaka Hashimoto ,  Katsuhisa Kanzaki ,  Tomoki Abe ,  Hirofumi Kasada ,  Koshi Ando

发明人： Masahiro Adachi ,  Yutaka Hashimoto ,  Katsuhisa Kanzaki ,  Tomoki Abe ,  Hirofumi Kasada ,  Koshi Ando

IPC分类号： H05B41/30

CPC分类号： H05B33/0848 ,  H05B33/089

摘要： An electronic device, and a corresponding light emission control method for the electronic device, emit light by utilizing recombination of electrons and holes the device and method input a pulse-shaped driving signal having a duty ratio higher than or equal to 0.7 and lower than 1.0 and thereby causing light to be emitted intermittently. When an electron density is denoted by n, a hole density by p, a thermal velocity of electrons by Vth:n, a thermal velocity of holes by Vth:p, an electron capture cross section of a defect level by σn, a hole capture cross section of a defect level by σp, and a pulse width of the driving signal by W, the input driving signal has a pulse width W that satisfies W

摘要翻译： 电子设备和相应的电子设备的发光控制方法通过利用电子和空穴的复合来发光，该装置和方法输入占空比高于或等于0.7且低于1.0的脉冲驱动信号 从而间歇地发光。 当电子密度由n表示时，空穴密度为p，电子的热速度为Vth：n，空穴的热速度为Vth：p，缺陷水平的电子捕获截面为＆sgr; n，a 缺陷电平的孔捕获截面为＆sgr; p，驱动信号的脉冲宽度为W，输入驱动信号的脉冲宽度W满足W <1 / {n·vth：n·＆sgr; n· p·vth：p·＆sgr; p /（n·vth：n·＆sgr; n + p·vth：p·＆sgr; p）}。

公开(公告)号：US07248025B2

公开(公告)日：2007-07-24

申请号：US11117528

申请日：2005-04-29

申请人： Masahiro Adachi

发明人： Masahiro Adachi

IPC分类号： G05F1/565

CPC分类号： G05F1/575

摘要： In a voltage regulator, a reference voltage generating circuit generates a reference voltage. A drive transistor is connected between a first power supply terminal and an output terminal and has a control terminal. A voltage divider generates a feedback voltage which is an intermediate voltage between voltages at the output terminal and a first power supply terminal. A differential amplifier generates an error voltage in accordance with the feedback voltage of the voltage divider and the reference voltage, and transmits it to the control terminal of the drive transistor. An oscillation preventing capacitor is connected between the control of the drive transistor and the output terminal. A capacitor is connected between the first power supply terminal and the first input of the differential amplifier.

摘要翻译： 在电压调节器中，参考电压产生电路产生参考电压。 驱动晶体管连接在第一电源端子和输出端子之间，并且具有控制端子。 分压器产生作为输出端子和第一电源端子处的电压之间的中间电压的反馈电压。 差分放大器根据分压器的反馈电压和参考电压产生误差电压，并将其发送到驱动晶体管的控制端子。 在驱动晶体管的控制和输出端子之间连接防振电容器。 电容器连接在第一电源端子和差分放大器的第一输入端之间。

公开(公告)号：US07185366B2

公开(公告)日：2007-02-27

申请号：US10084238

申请日：2002-02-27

申请人： Toru Mukai ,  Akira Ishida ,  Masahiro Adachi ,  Hideki Koike ,  Tetsuji Takada ,  Eiji Tameda

发明人： Toru Mukai ,  Akira Ishida ,  Masahiro Adachi ,  Hideki Koike ,  Tetsuji Takada ,  Eiji Tameda

IPC分类号： G06F11/00 ,  G06F11/22 ,  G06F11/30 ,  G06F11/32 ,  G06F11/34 ,  G06F11/36 ,  G06F12/14

CPC分类号： H04L63/1425 ,  H04L63/20

摘要： A security administration server providing various security services in the LAN and a host server operating in connection thereto are provided. There is installed a security administration server (S) having a function for collecting various log information managed in various devices to be monitored (C) operating in the LAN, a function for generating an image by extracting information useful for security management of the LAN from collected log information and visualizing such information to a form easy for a person to use, and a function for sending the image to another monitoring device (C). Further, the security administration server (S) provides various security services in connection with a host server (H) operating in an external network.

摘要翻译： 提供了一种在LAN中提供各种安全服务的安全管理服务器以及与其连接的主机服务器。 安装有一个安全管理服务器（S），该​​安全管理服务器具有收集在各种待监控的设备（C）中管理的各种日志信息的功能，该功能用于通过提取对LAN的安全管理有用的信息来生成图像 收集日志信息并将这些信息可视化为易于使用的表格，以及将图像发送到另一个监视设备（C）的功能。 此外，安全管理服务器（S）提供与在外部网络中操作的主机服务器（H）相关的各种安全服务。

公开(公告)号：US06765249B2

公开(公告)日：2004-07-20

申请号：US10621845

申请日：2003-07-16

申请人： Apostolos T. Voutsas ,  John W. Hartzell ,  Masahiro Adachi

发明人： Apostolos T. Voutsas ,  John W. Hartzell ,  Masahiro Adachi

IPC分类号： H01L31119

CPC分类号： H01L27/1262 ,  G11C13/0007 ,  G11C2213/31 ,  H01L27/1214 ,  H01L27/1218 ,  H01L27/3244 ,  H01L27/3262 ,  H01L29/4908 ,  H01L29/66757 ,  H01L29/78603 ,  H01L51/0097 ,  H01L2251/5315 ,  H01L2251/5338 ,  Y02E10/549 ,  Y02P70/521

摘要： A method for is provided forming a thin-film transistor (TFT) on a flexible substrate. The method comprises: supplying a metal foil substrate such as titanium (Ti), Inconel alloy, stainless steel, or Kovar, having a thickness in the range of 10 to 500 microns; depositing and annealing amorphous silicon to form polycrystalline silicon; and, thermally growing a gate insulation film overlying the polycrystalline. The silicon annealing process can be conducted at a temperature greater than 700 degrees C. using a solid-phase crystallization (SPC) annealing process. Thermally growing a gate insulation film includes: forming a polycrystalline silicon layer having a thickness in the range of 10 to 100 nanometers (nm); and, thermally oxidizing the film at temperature in the range of 900 to 1150 degrees for a period of time in the range of 2 to 60 minutes. Alternately, a plasma oxide layer is deposited over a thinner thermally oxidized layer.

公开(公告)号：US06727125B2

公开(公告)日：2004-04-27

申请号：US10124853

申请日：2002-04-17

申请人： Masahiro Adachi ,  Apostolos T. Voutsas

发明人： Masahiro Adachi ,  Apostolos T. Voutsas

IPC分类号： H01L2100

CPC分类号： H01L21/268 ,  B23K26/066 ,  H01L21/324 ,  H01L27/1285 ,  H01L29/6675

摘要： A multi-pattern shadow mask, shadow mask laser annealing system, and a multi-pattern shadow mask method for laser annealing are provided. The method comprises: supplying a silicon substrate; supplying a multi-pattern shadow mask with a plurality of aperture patterns; creating substrate alignment marks; with respect to the alignment marks, laser annealing a substrate region in a plurality of aperture patterns; forming a corresponding plurality of polysilicon regions; and, forming a corresponding plurality of transistor channel regions in the plurality of polysilicon regions. Typically, the shadow mask includes a plurality of sections, with each section having at least one aperture pattern. A shadow mask section can be selected to create a corresponding aperture pattern. If the mask section includes a plurality of aperture patterns, the selection of a section creates all the corresponding aperture patterns in the selected section.

摘要翻译： 提供多模式荫罩，荫罩激光退火系统和用于激光退火的多图案荫罩方法。 该方法包括：提供硅衬底; 提供具有多个孔径图案的多图案荫罩; 产生衬底对准标记; 相对于对准标记，激光退火多个孔径图案中的基板区域; 形成相应的多个多晶硅区域; 以及在所述多个多晶硅区域中形成相应的多个晶体管沟道区。 通常，荫罩包括多个部分，每个部分具有至少一个孔径图案。 可以选择荫罩部分以创建相应的孔径图案。 如果掩模部分包括多个孔径图案，则部分的选择创建所选部分中的所有对应的孔径图案。