公开(公告)号：US20110097517A1

公开(公告)日：2011-04-28

申请号：US12833571

申请日：2010-07-09

申请人： Michael W. Stowell ,  Klaus Michael

发明人： Michael W. Stowell ,  Klaus Michael

IPC分类号： C23C16/511 ,  C23C16/455 ,  C23C16/458 ,  C23C16/46

CPC分类号： H01J27/16 ,  C23C14/221 ,  H01J37/32192 ,  H01J37/3222 ,  H05H1/46

摘要： Systems and methods for depositing protection and dielectric layers using a vertical microwave deposition processes are provided. In some embodiments, a microwave antenna is vertically attached to a sidewall of a processing chamber. A substrate can be introduced of placed within the processing chamber in a substantially vertical configuration or in a configuration where the substrate is parallel to a sidewall of the processing chamber. A plasma can be formed with the microwave antenna and various precursor materials, such as precursors that include magnesium or silicon. A processing chamber with multiple sub-chambers is also provided according to some embodiments of the invention. Various sub-chambers can have vertical microwave plasma line sources. Other sub-chambers can providing heating and other processes. At least one substrate supporting member can be used to move the substrate vertically from one sub-chamber to another.

摘要翻译： 提供了使用垂直微波沉积工艺沉积保护和介电层的系统和方法。 在一些实施例中，微波天线垂直地附接到处理室的侧壁。 可以以基本垂直的配置或基板平行于处理室的侧壁的结构将基底放置在处理室内。 可以用微波天线和各种前体材料（例如包括镁或硅的前体）形成等离子体。 根据本发明的一些实施例，还提供具有多个子室的处理室。 各种子室可以具有垂直微波等离子体线源。 其他子室可以提供加热和其他工艺。 可以使用至少一个基板支撑构件将基板从一个子室垂直移动到另一个子室。

公开(公告)号：US07842355B2

公开(公告)日：2010-11-30

申请号：US11264596

申请日：2005-11-01

申请人： Michael W. Stowell

发明人： Michael W. Stowell

IPC分类号： C23C8/00 ,  C23C16/00

CPC分类号： C23C16/515 ,  C23C16/029 ,  C23C16/308 ,  C23C16/401 ,  C23C16/52 ,  H01J37/32201

摘要： A method of generating a film during a chemical vapor deposition process is disclosed. One embodiment includes generating a first electrical pulse having a first pulse amplitude; using the first electrical pulse to generate a first density of radicalized species; disassociating a feedstock gas using the radicalized species in the first density of radicalized species, thereby creating a first deposition material; depositing the first deposition material on a substrate; generating a second electrical pulse having a second pulse amplitude, wherein the second pulse amplitude is different from the first pulse width; using the second electrical pulse to generate a second density of radicalized species; disassociating a feedstock gas using the radicalized species in the second density of radicalized species, thereby creating a second deposition material; and depositing the second plurality of deposition materials on the first deposition material.

摘要翻译： 公开了一种在化学气相沉积工艺期间产生膜的方法。 一个实施例包括产生具有第一脉冲幅度的第一电脉冲; 使用第一电脉冲产生第一密度的自由基化物种; 使用第一密度的自由基化物质中的自由基化物质分离原料气体，从而产生第一沉积材料; 将第一沉积材料沉积在基底上; 产生具有第二脉冲幅度的第二电脉冲，其中所述第二脉冲幅度不同于所述第一脉冲宽度; 使用第二电脉冲来产生第二密度的激进化物种; 使用第二密度的自由基化物质中的自由基化物质分解原料气体，从而产生第二沉积材料; 以及将所述第二多个沉积材料沉积在所述第一沉积材料上。

公开(公告)号：US20100078315A1

公开(公告)日：2010-04-01

申请号：US12238685

申请日：2008-09-26

申请人： Michael W. Stowell

发明人： Michael W. Stowell

IPC分类号： C23C14/34

CPC分类号： C23C14/3471 ,  H01J37/3222 ,  H01J37/34 ,  H01J37/3423 ,  H01J37/3426

摘要： The invention provides a microwave source to assist in sputtering deposition. Such a microwave source comprises a microstrip antenna that is attached to an end of a dielectric layer outside a sputtering target or cathode. The microstrip antenna comprising a dielectric coated metal strip radiates microwave between the sputtering cathode and a cathode dark space that is formed near the sputtering cathode. The microwave enhances plasma density in the cathode dark space. With the assistance of the microwave source, the sputtering target is able to operate at a lower pressure, a lower voltage and may yield higher deposition rates than without the microwave source. The target may have a generally circular or rectangular cross section. The microstrip may be of a curved strip such as a ring shape or a straight strip, depending upon the shape of the sputtering target.

摘要翻译： 本发明提供了一种辅助溅射沉积的微波源。 这种微波源包括微带天线，其附接到溅射靶或阴极外部的电介质层的端部。 包括电介质涂覆的金属条的微带天线在溅射阴极和形成在溅射阴极附近的阴极黑暗空间之间辐射微波。 微波提高阴极黑暗空间中的等离子体密度。 在微波源的帮助下，溅射靶能够在较低的压力，较低的电压下工作，并且可能产生比没有微波源更高的沉积速率。 靶可以具有大致圆形或矩形横截面。 取决于溅射靶的形状，微带可以是弯曲的条，例如环形或直条。

公开(公告)号：US20090238993A1

公开(公告)日：2009-09-24

申请号：US12077375

申请日：2008-03-19

申请人： Michael W. Stowell ,  Nety Krishna

发明人： Michael W. Stowell ,  Nety Krishna

IPC分类号： B05D3/06

CPC分类号： B05D3/0227 ,  B05D1/60 ,  B05D1/62 ,  B05D7/02 ,  C23C14/541 ,  C23C16/46

摘要： A source of IR radiation is used to heat a plastic substrate in a fast fashion inside a processing chamber, where the processing chamber is configured to preheat the plastic substrate and to perform thin film deposition, such as chemical vapor deposition (CVD) or physical vapor deposition (PVD), or plasma etching and cleaning. One aspect of using the source of IR radiation is to preheat only the surface of the plastic substrate while the core of the plastic substrate remains substantially unheated, so that the structure of the plastic substrate may remain unchanged. Meanwhile, the surface properties of the plastic substrate may be modified after the preheating treatment. The source of IR radiation may be provided at wavelength selected to substantially match the absorption wavelength of the plastic substrate. The plastic substrate moves through the heat flux zone generated by the source of IR radiation at a controllable speed.

摘要翻译： IR辐射源用于在处理室内以快速方式加热塑料基板，其中处理室被配置为预热塑料基板并进行薄膜沉积，例如化学气相沉积（CVD）或物理蒸气 沉积（PVD）或等离子体蚀刻和清洁。 使用IR辐射源的一个方面是仅在塑料基板的表面预热，同时塑料基板的芯保持基本上不加热，使得塑料基板的结构可以保持不变。 同时，可以在预热处理之后改变塑料基板的表面性能。 可以在被选择为基本上匹配塑料基板的吸收波长的波长处提供IR辐射源。 塑料基板以可控制的速度移动通过IR辐射源产生的热通量区域。

公开(公告)号：US20070190808A1

公开(公告)日：2007-08-16

申请号：US11558217

申请日：2006-11-09

申请人： Michael W. Stowell ,  Jose M. Dieguez-Campo ,  Michael Liehr

发明人： Michael W. Stowell ,  Jose M. Dieguez-Campo ,  Michael Liehr

IPC分类号： H01L21/31 ,  H01L21/469

CPC分类号： C23C16/0227 ,  C23C16/402 ,  C23C16/46 ,  C23C16/50 ,  H01J9/02 ,  H01J11/12 ,  H01J11/38

摘要： A system and method for producing a film is described. One embodiment of the process includes the following processes: providing a substrate comprising a glass plate, electrodes; and bus bars; heating the substrate to an approximate critical temperature; initiating the chemical vapor deposition process when the substrate is near the approximate critical temperature, thereby depositing a film on the substrate; maintaining the upper portion of the film at approximately the critical temperature while the chemical vapor deposition process is ongoing; terminating the chemical vapor deposition process once the film has reached a desired thickness; and cooling the substrate and the deposited film.

摘要翻译： 描述制造薄膜的系统和方法。 该方法的一个实施方案包括以下过程：提供包括玻璃板，电极的基材; 和巴士吧 将基板加热至近似临界温度; 当衬底接近临界温度时启动化学气相沉积工艺，从而在衬底上沉积膜; 在化学气相沉积过程正在进行的同时将膜的上部部分维持在大约临界温度; 一旦膜达到所需厚度，终止化学气相沉积工艺; 并冷却基板和沉积膜。

公开(公告)号：US09018110B2

公开(公告)日：2015-04-28

申请号：US14112012

申请日：2012-03-29

申请人： Michael W. Stowell ,  Majeed A. Foad ,  Ralf Hofmann ,  Wolfgang R. Aderhold ,  Stephen Moffatt

发明人： Michael W. Stowell ,  Majeed A. Foad ,  Ralf Hofmann ,  Wolfgang R. Aderhold ,  Stephen Moffatt

IPC分类号： H01L23/66 ,  H01L21/263 ,  H01L21/324 ,  H01L21/67 ,  H05B6/70

CPC分类号： H01L21/263 ,  H01L21/324 ,  H01L21/67115 ,  H05B6/702 ,  H05B6/708

摘要： Methods and apparatus for radiation processing of semiconductor substrates using microwave or millimeter wave energy are provided. The microwave or millimeter wave energy may have a frequency between about 600 MHz and about 1 THz. Alternating current from a magnetron is coupled to a leaky microwave emitter that has an inner conductor and an outer conductor, the outer conductor having openings with a dimension smaller than a wavelength of the emitted radiation. The inner and outer conductors are separated by an insulating material. Interference patterns produced by the microwave emissions may be uniformized by phase modulating the power to the emitter and/or by frequency modulating the frequency of the power itself. Power from a single generator may be divided to two or more emitters by a power divider.

摘要翻译： 提供了使用微波或毫米波能量的半导体衬底的辐射处理方法和装置。 微波或毫米波能量可以具有在约600MHz和约1THz之间的频率。 来自磁控管的交流电耦合到具有内部导体和外部导体的泄漏的微波发射器，该外部导体具有尺寸小于所发射的辐射的波长的开口。 内外导体由绝缘材料分开。 由微波发射产生的干扰模式可以通过相位调制发射器的功率和/或通过频率调制电源本身的频率而被均匀化。 来自单个发电机的功率可以由功率分配器划分为两个或更多个发射器。

公开(公告)号：US08536955B2

公开(公告)日：2013-09-17

申请号：US12865645

申请日：2008-01-30

申请人： Michael W. Stowell ,  Harald Gaertner

发明人： Michael W. Stowell ,  Harald Gaertner

IPC分类号： H01P5/02

CPC分类号： H01Q13/203 ,  H01J37/32229 ,  H05H1/46

摘要： A microwave waveguide, and a system and method related to a microwave waveguide, is described. One embodiment includes an integrated microwave waveguide comprising a waveguide block, a first waveguide section in the waveguide block, a second waveguide section in the waveguide block, a first impedance transition section integrated with the first waveguide section in the waveguide block, wherein the first impedance section comprises a first conduit with a first end and a second end, wherein the first conduit is tapered from the first end to the second end, and a second impedance transition section integrated with the second waveguide section in the waveguide block, wherein the second impedance section comprises a second conduit with a third end and a fourth end, wherein the second conduit is tapered from the third end to the fourth end, and wherein the second end of the first impedance transition section and the fourth end of the second impedance transition section are connected at an antenna stub.

摘要翻译： 描述微波波导，以及与微波波导有关的系统和方法。 一个实施例包括集成微波波导，其包括波导块，波导块中的第一波导部分，波导块中的第二波导部分，与波导块中的第一波导部分集成的第一阻抗转换部分，其中第一阻抗 该部分包括具有第一端和第二端的第一导管，其中所述第一导管从所述第一端向所述第二端渐缩，以及与所述波导块中的所述第二波导段集成的第二阻抗转变部，其中所述第二阻抗 所述第二导管具有第三端和第四端，其中所述第二导管从所述第三端向所述第四端渐缩，并且其中所述第一阻抗转变区的第二端和所述第二阻抗转变区的第四端 连接在天线桩上。

公开(公告)号：US07993733B2

公开(公告)日：2011-08-09

申请号：US12070660

申请日：2008-02-20

申请人： Michael W. Stowell ,  Manuel D. Campo

发明人： Michael W. Stowell ,  Manuel D. Campo

IPC分类号： B32B7/02 ,  H05H1/46

CPC分类号： G02B1/14 ,  C23C16/308 ,  C23C16/407 ,  C23C16/511 ,  C23C16/515 ,  C23C16/52 ,  G02B1/10 ,  Y10T428/24942 ,  Y10T428/2495 ,  Y10T428/24975

摘要： The invention includes the structure of a multilayer protective coating, which may have, among other properties, scratch resistance, UV absorption, and an effective refractive index matched to a polymer substrate such as polycarbonate. Each layer may contain multiple components consisting of organic and inorganic materials. The multilayer protective coating includes interleaved organic layers and inorganic layers. The organic layers may have 20% or more organic compounds such as SiOxCyHz. The inorganic layers may have 80% or more inorganic materials, such as SiO2, SiOxNy, and ZnO, or mixtures thereof. Each layer of the multilayer protective coating is a micro layer and may have a thickness of 5 angstroms or less in various embodiments. The multilayer protective coating may contain in the order of hundreds or thousands of micro layers, depending upon the design requirement of applications. In each micro layer, the components may have substantially continuous variations in concentration.

摘要翻译： 本发明包括多层保护涂层的结构，其可以具有与诸如聚碳酸酯的聚合物基材匹配的耐刮擦性，UV吸收和有效折射率等特性。 每个层可以包含由有机和无机材料组成的多个组分。 多层保护涂层包括交错的有机层和无机层。 有机层可以具有20％以上的有机化合物，例如SiO x C y H z。 无机层可以具有80％以上的无机材料，例如SiO 2，SiO x N y和ZnO，或其混合物。 多层保护涂层的每层是微层，并且在各种实施方案中可以具有5埃或更小的厚度。 取决于应用的设计要求，多层保护涂层可以包含数百或数千个微层的数量级。 在每个微层中，组分可以具有基本上连续的浓度变化。

公开(公告)号：US20100330300A1

公开(公告)日：2010-12-30

申请号：US12865317

申请日：2008-01-30

申请人： Michael W. Stowell

发明人： Michael W. Stowell

IPC分类号： H05H1/30

CPC分类号： H01J37/32477 ,  H01J37/32192 ,  H01J37/32357 ,  H01J37/32422

摘要： A system and method for treating a surface of a substrate is described. One embodiment includes a method for depositing a film on a substrate, the method comprising generating a first plurality of power pulses, each of the first plurality of power pulses having a first pulse amplitude, providing the first plurality of power pulses to a first discharge tube, generating a plasma about the first discharge tube using the first plurality of power pulses, sustaining the plasma between each of the first plurality of power pulses such that the plasma is not reignited during each of the first plurality of power pulses, disassociating a feedstock gas using the plasma, and depositing at least a portion of the disassociated feedstock gas onto a substrate.

摘要翻译： 描述了用于处理基板表面的系统和方法。 一个实施例包括用于在衬底上沉积膜的方法，所述方法包括产生第一多个功率脉冲，第一多个功率脉冲中的每一个具有第一脉冲幅度，将第一多个功率脉冲提供给第一放电管 使用所述第一多个功率脉冲在所述第一放电管周围产生等离子体，在所述第一多个功率脉冲中的每一个之间维持所述等离子体，使得所述等离子体在所述第一多个功率脉冲期间的每一个期间不重新点燃， 使用等离子体，并将至少一部分脱离的原料气体沉积到基底上。

公开(公告)号：US20090208715A1

公开(公告)日：2009-08-20

申请号：US12070660

申请日：2008-02-20

申请人： Michael W. Stowell ,  Manuel D. Campo

发明人： Michael W. Stowell ,  Manuel D. Campo

IPC分类号： B32B7/02 ,  H05H1/46

CPC分类号： G02B1/14 ,  C23C16/308 ,  C23C16/407 ,  C23C16/511 ,  C23C16/515 ,  C23C16/52 ,  G02B1/10 ,  Y10T428/24942 ,  Y10T428/2495 ,  Y10T428/24975

摘要： The invention includes the structure of a multilayer protective coating, which may have, among other properties, scratch resistance, UV absorption, and an effective refractive index matched to a polymer substrate such as polycarbonate. Each layer may contain multiple components consisting of organic and inorganic materials. The multilayer protective coating includes interleaved organic layers and inorganic layers. The organic layers may have 20% or more organic compounds such as SiOxCyHz. The inorganic layers may have 80% or more inorganic materials, such as SiO2, SiOxNy, and ZnO, or mixtures thereof. Each layer of the multilayer protective coating is a micro layer and may have a thickness of 5 angstroms or less in various embodiments. The multilayer protective coating may contain in the order of hundreds or thousands of micro layers, depending upon the design requirement of applications. In each micro layer, the components may have substantially continuous variations in concentration.

摘要翻译： 本发明包括多层保护涂层的结构，其可以具有与诸如聚碳酸酯的聚合物基材匹配的耐刮擦性，UV吸收和有效折射率等特性。 每个层可以包含由有机和无机材料组成的多个组分。 多层保护涂层包括交错的有机层和无机层。 有机层可以具有20％以上的有机化合物，例如SiO x C y H z。 无机层可以具有80％以上的无机材料，例如SiO 2，SiO x N y和ZnO，或其混合物。 多层保护涂层的每层是微层，并且在各种实施方案中可以具有5埃或更小的厚度。 取决于应用的设计要求，多层保护涂层可以包含数百或数千个微层的数量级。 在每个微层中，组分可以具有基本上连续的浓度变化。