摘要:
A combination load lock apparatus is provided, wherein a chamber is coupled to two or more valves in selective fluid communication with two or more respective volumes. A support member for supporting a workpiece is disposed within an interior portion of the chamber, wherein a translation apparatus is operably coupled thereto. The translation apparatus is operable to rotate and/or translate the workpiece on the support member about and/or along a first axis, wherein a detection apparatus associated with the chamber is operable to detect one or more characteristics of the workpiece during the rotation and/or translation thereof. The workpiece may be further rotated in a predetermined manner based on the one or more detected characteristics. A recess is further defined in the interior portion of the chamber, wherein the translation apparatus is operable to translate the workpiece into and out of the recess to reduce particulate contamination thereon.
摘要:
A combination load lock apparatus is provided, wherein a chamber is coupled to two or more valves in selective fluid communication with two or more respective volumes. A support member for supporting a workpiece is disposed within an interior portion of the chamber, wherein a translation apparatus is operably coupled thereto. The translation apparatus is operable to rotate and/or translate the workpiece on the support member about and/or along a first axis, wherein a detection apparatus associated with the chamber is operable to detect one or more characteristics of the workpiece during the rotation and/or translation thereof. The workpiece may be further rotated in a predetermined manner based on the one or more detected characteristics. A recess is further defined in the interior portion of the chamber, wherein the translation apparatus is operable to translate the workpiece into and out of the recess to reduce particulate contamination thereon.
摘要:
Disclosed is a surge protection system for use with an ion source assembly. The system comprises a high voltage power source coupled in series with a thermionic diode and an ion source assembly. The high voltage power supply is enclosed in the pressure tank and drives the ion source assembly. The thermionic diode is comprised of an insulating tube disposed between the ion source assembly enclosure and the output of the high voltage power supply and makes use of existing ion source assembly components to limit damage to the power supply during arc failures of the ion source assembly.
摘要:
Disclosed is a surge protection system for use with an ion source assembly. The system comprises a high voltage power source coupled in series with a thermionic diode and an ion source assembly. The high voltage power supply is enclosed in the pressure tank and drives the ion source assembly. The thermionic diode is comprised of an insulating tube disposed between the ion source assembly enclosure and the output of the high voltage power supply and makes use of existing ion source assembly components to limit damage to the power supply during arc failures of the ion source assembly.
摘要:
An ion implanter having a source, a workpiece support and a transport system for delivering ions from the source to an ion implantation chamber that contains the workpiece support. The ion source has an arc chamber for ionizing a source material routed into the arc chamber that defines an exit aperture for routing ions to the transport system and including an arc chamber flange attached to the arc chamber and including a first surface that defines a gas inlet which accepts gas from a source and a gas outlet which opens into the arc chamber. An arc chamber support includes a support flange having a conforming surface that sealingly engages the first surface of arc chamber flange at a region of the gas inlet and further includes a throughpassage that aligns with the gas inlet. A gas supply line routes gas from a gas source through the throughpassage of the support flange and into the gas inlet of said arc chamber flange.
摘要:
An ion implanter having a source, a workpiece support and a transport system for delivering ions from the source to an ion implantation chamber that contains the workpiece support. The ion source has an arc chamber for ionizing a source material routed into the arc chamber that defines an exit aperture for routing ions to the transport system and including an arc chamber flange attached to the arc chamber and including a first surface that defines a gas inlet which accepts gas from a source and a gas outlet which opens into the arc chamber. An arc chamber support includes a support flange having a conforming surface that sealingly engages the first surface of arc chamber flange at a region of the gas inlet and further includes a throughpassage that aligns with the gas inlet. A gas supply line routes gas from a gas source through the throughpassage of the support flange and into the gas inlet of said arc chamber flange.
摘要:
Dosimetry systems and methods are also presented for measuring a scanned ion beam at a plurality of points along a curvilinear path at a workpiece location in a process chamber. An illustrated dosimetry system comprises a sensor and a mounting apparatus that supports support the sensor and selectively positions the sensor at a plurality of points along the curvilinear path, wherein the mounting apparatus can selectively position the sensor to point toward a vertex of the scanned ion beam.
摘要:
Dosimetry systems and methods are also presented for measuring a scanned ion beam at a plurality of points along a curvilinear path at a workpiece location in a process chamber. An illustrated dosimetry system comprises a sensor and a mounting apparatus that supports support the sensor and selectively positions the sensor at a plurality of points along the curvilinear path, wherein the mounting apparatus can selectively position the sensor to point toward a vertex of the scanned ion beam.
摘要:
A method of forming a FinFET device. The method may include providing a substrate having a single crystalline region, heating the substrate to a substrate temperature effective for dynamically removing implant damage during ion implantation, implanting ions into the substrate while the substrate is maintained at the substrate temperature, and patterning the single crystalline region so as to form a single crystalline fin.
摘要:
An electrostatic chuck is formed using materials that are optically transparent to a range of frequencies, such as infrared radiation. The invention discloses several methods for achieving optical transparency. The chuck electrode can be formed having a mesh pattern designed with a specific open area percentage to provide adequate wafer clamping force while still allowing sufficient levels of infrared radiation to pass through. Alternatively, the chuck electrode can also be made from a transparent conductive film. A workpiece is disposed on one surface of the chuck, and a radiative heat source is positioned on the opposite side of the chuck. A reflector plate may be used to reflect the infrared radiation toward the chuck and the wafer. The spacing of the radiation sources and the shape of the reflector plate may be modified to focus more radiation on a particular portion of the workpiece if desired.