公开(公告)号：US09013044B2

公开(公告)日：2015-04-21

申请号：US13945392

申请日：2013-07-18

Applicant: Micron Technology Inc.

Inventor： Alan G Wood ,  David R Hembree

IPC: H01L23/48 ,  H01L23/52 ,  H01L23/00 ,  H01L23/31 ,  H01L25/065 ,  H01L21/683 ,  H01L23/498

CPC classification number: H01L23/02 ,  B33Y70/00 ,  H01L21/6835 ,  H01L23/3114 ,  H01L23/48 ,  H01L23/481 ,  H01L23/49827 ,  H01L24/10 ,  H01L24/11 ,  H01L24/13 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/78 ,  H01L24/85 ,  H01L25/0657 ,  H01L2221/6834 ,  H01L2224/02333 ,  H01L2224/02335 ,  H01L2224/02372 ,  H01L2224/0401 ,  H01L2224/11 ,  H01L2224/1134 ,  H01L2224/13 ,  H01L2224/13024 ,  H01L2224/45014 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45139 ,  H01L2224/4554 ,  H01L2224/45565 ,  H01L2224/48091 ,  H01L2224/4813 ,  H01L2224/48145 ,  H01L2224/4824 ,  H01L2224/48471 ,  H01L2224/48475 ,  H01L2224/48599 ,  H01L2224/48699 ,  H01L2224/48992 ,  H01L2224/49429 ,  H01L2224/78301 ,  H01L2224/85001 ,  H01L2224/85045 ,  H01L2224/85051 ,  H01L2224/85121 ,  H01L2224/85205 ,  H01L2224/85444 ,  H01L2224/85951 ,  H01L2225/06506 ,  H01L2225/06513 ,  H01L2225/06524 ,  H01L2225/06541 ,  H01L2225/06596 ,  H01L2924/00015 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/0102 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01031 ,  H01L2924/01033 ,  H01L2924/01043 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/1433 ,  H01L2924/15311 ,  H01L2924/19042 ,  H01L2924/20751 ,  H01L2924/20752 ,  H01L2924/20753 ,  H01L2924/20754 ,  H01L2924/20755 ,  H01L2924/20756 ,  H01L2924/20757 ,  H01L2924/20758 ,  H01L2924/20759 ,  H01L2924/2076 ,  H01L2924/30105 ,  H01L2924/30107 ,  H01L2924/3011 ,  H01L2924/3025 ,  H01L2924/00014 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/45644 ,  H01L2924/00 ,  H01L2924/2075 ,  H01L2924/013 ,  H01L2924/00013 ,  H01L2924/00012

Abstract: A through wire interconnect for a semiconductor substrate includes a via extending through the semiconductor substrate from the first side to the second side thereof; a wire in the via having a first end with a bonded connection to the substrate contact and a second end proximate to the second side of the semiconductor substrate; a dielectric material in the via configured to electrically insulate the wire from the semiconductor substrate; a bonding member bonded to the first end of the wire and to the substrate contact configured to secure the wire to the substrate contact; and a contact on the second end of the wire.

Abstract translation: 用于半导体衬底的通线互连包括从第一侧延伸穿过半导体衬底到第二侧的通孔; 所述通孔中的导线具有第一端，所述第一端具有与所述衬底接触的接合连接，以及靠近所述半导体衬底的第二侧的第二端; 所述通孔中的电介质材料被配置为使所述导线与所述半导体衬底电绝缘; 接合构件，其接合到所述导线的所述第一端和所述衬底接触件，被配置为将所述导线固定到所述衬底接触件; 和电线第二端的触点。