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    Detergent Composition
    1.
    发明申请
    Detergent Composition 失效
    洗涤剂组合物

    公开(公告)号：US20090305939A1

    公开(公告)日：2009-12-10

    申请号：US12477962

    申请日：2009-06-04

    申请人： Ming Tang ,  Qing Chen ,  Sen Liu ,  Kenneth Nathan Price

    发明人： Ming Tang ,  Qing Chen ,  Sen Liu ,  Kenneth Nathan Price

    IPC分类号： C11D3/34

    CPC分类号： C11D1/143 ,  C11D1/146 ,  C11D1/22

    摘要： A detergent composition comprising at most 15% by weight of phosphate builder(s) and aluminosilicate builder(s), and comprising at least one short chain anionic surfactant selected from alkyl sulfate surfactant(s) and alkyl sulfonate surfactants.

    摘要翻译： 一种洗涤剂组合物，其包含至多15重量％的磷酸盐助洗剂和硅铝酸盐助洗剂，并且包含至少一种选自烷基硫酸盐表面活性剂和烷基磺酸盐表面活性剂的短链阴离子表面活性剂。

    Detergent composition
    2.
    发明授权
    Detergent composition 失效
    洗涤剂组成

    公开(公告)号：US07910538B2

    公开(公告)日：2011-03-22

    申请号：US12477962

    申请日：2009-06-04

    申请人： Ming Tang ,  Qing Chen ,  Sen Liu ,  Kenneth Nathan Price

    发明人： Ming Tang ,  Qing Chen ,  Sen Liu ,  Kenneth Nathan Price

    IPC分类号： C11D17/00

    CPC分类号： C11D1/143 ,  C11D1/146 ,  C11D1/22

    摘要： A detergent composition comprising at most 15% by weight of phosphate builder(s) and aluminosilicate builder(s), and comprising at least one short chain anionic surfactant selected from alkyl sulfate surfactant(s) and alkyl sulfonate surfactants.

    摘要翻译： 一种洗涤剂组合物，其包含至多15重量％的磷酸盐助洗剂和硅铝酸盐助洗剂，并且包含至少一种选自烷基硫酸盐表面活性剂和烷基磺酸盐表面活性剂的短链阴离子表面活性剂。

    Detergent composition containing suds boosting co-surfactant and suds stabilizing surface active polymer
    3.
    发明申请
    Detergent composition containing suds boosting co-surfactant and suds stabilizing surface active polymer 审中-公开
    洗涤剂组合物含有增泡助表面活性剂和泡沫稳定表面活性聚合物

    公开(公告)号：US20090023625A1

    公开(公告)日：2009-01-22

    申请号：US12214874

    申请日：2008-06-23

    申请人： Ming Tang ,  Yongmei Sun ,  Kenneth Nathan Price ,  Suxuan Gong ,  Sen Liu ,  Stacie Ellen Hecht ,  Mark Robert Sivik ,  Peng Yan

    发明人： Ming Tang ,  Yongmei Sun ,  Kenneth Nathan Price ,  Suxuan Gong ,  Sen Liu ,  Stacie Ellen Hecht ,  Mark Robert Sivik ,  Peng Yan

    IPC分类号： C11D7/42 ,  C11D3/34

    CPC分类号： C11D3/0094 ,  C11D1/146 ,  C11D1/29 ,  C11D1/37 ,  C11D1/65 ,  C11D1/83 ,  C11D1/86 ,  C11D1/94 ,  C11D3/222 ,  C11D3/225 ,  C11D3/37 ,  C11D3/3788

    摘要： A detergent composition having improved sudsing profile comprising 0.2% to 6% by weight of a suds boosting co-surfactant having the formula R—O—(CH2CH2O)nSO3−M+, wherein R is a branched or unbranched alkyl group having 8 to 16 carbon atoms, n is an integer from 0 to 3, M is a cation of alkali metal, alkaline earth metal or ammonium; 0.01% to 5% by weight of a surface active polymer having the properties: (i) the surface tension of a 39 ppm polymer solution in distilled water is from 40 mN/m to 65 mN/m as measured at 25° C. by a tensiometer; and (ii) the viscosity of a 500 ppm polymer solution in distilled water is from 0.0009 to 0.003 Pa·S as measured at 25° C. by a rheometer; and 6% to 15% by weight of a main surfactant system. The total surfactant level in the detergent composition is less than 20% and the phosphate and/or aluminosilicate builder level in the detergent composition is less than 15% by weight.

    摘要翻译： 具有改善的起泡曲线的洗涤剂组合物，其包含0.2重量％至6重量％的具有式RO-（CH 2 CH 2 O）n SO 3 -M +的增泡助剂，其中R是具有8至16个碳原子的支链或非支链烷基， n为0〜3的整数，M为碱金属，碱土金属或铵的阳离子; 0.01重量％至5重量％的表面活性聚合物具有以下性质：（i）在25℃下测定的39ppm聚合物溶液在蒸馏水中的表面张力为40mN / m至65mN / m，由 张力计 和（ii）在25℃下用流变仪测得的500ppm聚合物溶液在蒸馏水中的粘度为0.0009至0.003Pa.S; 和6重量％至15重量％的主表面活性剂体系。 洗涤剂组合物中的总表面活性剂含量小于20％，洗涤剂组合物中的磷酸盐和/或硅铝酸盐助洗剂水平小于15重量％。

    METHOD OF MULTIPLE PATTERNING TO FORM SEMICONDUCTOR DEVICES
    5.
    发明申请
    METHOD OF MULTIPLE PATTERNING TO FORM SEMICONDUCTOR DEVICES 有权
    多种图案形成半导体器件的方法

    公开(公告)号：US20140024191A1

    公开(公告)日：2014-01-23

    申请号：US13555240

    申请日：2012-07-23

    申请人： Kuang-Jung Chen ,  Kangguo Cheng ,  Bruce B. Doris ,  Steven J. Holmes ,  Sen Liu

    发明人： Kuang-Jung Chen ,  Kangguo Cheng ,  Bruce B. Doris ,  Steven J. Holmes ,  Sen Liu

    IPC分类号： H01L21/31 ,  H01L21/336

    CPC分类号： H01L21/0274 ,  H01L21/26586 ,  H01L21/3081 ,  H01L21/76229 ,  H01L21/76283 ,  H01L29/517 ,  H01L29/66575 ,  H01L29/78

    摘要： A method of forming different structures of a semiconductor device using a single mask and a hybrid photoresist. The method includes: applying a first photoresist layer on a semiconductor substrate; patterning the first photoresist layer using a photomask to form a first patterned photoresist layer; using the first patterned photoresist layer to form a first structure of a semiconductor device; removing the first patterned photoresist layer; applying a second photoresist layer on the semiconductor substrate; patterning the second photoresist layer using the photomask to form a second patterned photoresist layer; using the second patterned photoresist layer to form a second structure of a semiconductor device; removing the second patterned photoresist layer; and wherein either the first or the second photoresist layer is a hybrid photoresist layer comprising a hybrid photoresist.

    摘要翻译： 使用单个掩模和混合光致抗蚀剂形成半导体器件的不同结构的方法。 该方法包括：在半导体衬底上施加第一光致抗蚀剂层; 使用光掩模图案化第一光致抗蚀剂层以形成第一图案化光致抗蚀剂层; 使用所述第一图案化的光致抗蚀剂层形成半导体器件的第一结构; 去除第一图案化光致抗蚀剂层; 在所述半导体衬底上施加第二光致抗蚀剂层; 使用光掩模图案化第二光致抗蚀剂层以形成第二图案化光致抗蚀剂层; 使用所述第二图案化的光致抗蚀剂层形成半导体器件的第二结构; 去除第二图案化光致抗蚀剂层; 并且其中所述第一或第二光致抗蚀剂层是包含混合光致抗蚀剂的混合光致抗蚀剂层。

    Near-infrared absorbing film compositions
    8.
    发明授权
    Near-infrared absorbing film compositions 有权
    近红外吸收膜组合物

    公开(公告)号：US08293451B2

    公开(公告)日：2012-10-23

    申请号：US12543003

    申请日：2009-08-18

    申请人： Martin Glodde ,  Dario L. Goldfarb ,  Wu-Song Huang ,  Wai-Kin Li ,  Sen Liu ,  Pushkara R. Varanasi ,  Libor Vyklicky

    发明人： Martin Glodde ,  Dario L. Goldfarb ,  Wu-Song Huang ,  Wai-Kin Li ,  Sen Liu ,  Pushkara R. Varanasi ,  Libor Vyklicky

    IPC分类号： G03F7/00 ,  G03F7/004 ,  G03F7/028

    CPC分类号： G03F7/091 ,  G03F9/7026

    摘要： A curable liquid formulation containing at least (i) one or more near-infrared absorbing triphenylamine-based dyes, and (ii) one or more casting solvents. The invention is also directed to solid near-infrared absorbing films composed of crosslinked forms of the curable liquid formulation. The invention is also directed to a microelectronic substrate containing a coating of the solid near-infrared absorbing film as well as a method for patterning a photoresist layer coated on a microelectronic substrate in the case where the near-infrared absorbing film is between the microelectronic substrate and a photoresist film.

    摘要翻译： 包含至少（i）一种或多种近红外吸收性三苯胺类染料的可固化液体制剂，和（ii）一种或多种浇铸溶剂。 本发明还涉及由可固化液体制剂的交联形式组成的固体近红外吸收膜。 本发明还涉及一种含有固体近红外线吸收膜的涂层的微电子衬底，以及在近红外吸收膜位于微电子衬底之间的情况下，用于图案化涂覆在微电子衬底上的光刻胶层的方法 和光刻胶膜。

    MULTIPLE EXPOSURE PHOTOLITHOGRAPHY METHODS
    9.
    发明申请
    MULTIPLE EXPOSURE PHOTOLITHOGRAPHY METHODS 有权
    多次曝光光刻法

    公开(公告)号：US20120178027A1

    公开(公告)日：2012-07-12

    申请号：US13418421

    申请日：2012-03-13

    申请人： Kuang-Jung Chen ,  Wu-Song Huang ,  Ranee Wai-Ling Kwong ,  Sen Liu ,  Pushkara R. Varanasi

    发明人： Kuang-Jung Chen ,  Wu-Song Huang ,  Ranee Wai-Ling Kwong ,  Sen Liu ,  Pushkara R. Varanasi

    IPC分类号： G03F7/20

    CPC分类号： G03F7/038 ,  G03F7/0045 ,  G03F7/0382 ,  G03F7/0392 ,  G03F7/095 ,  G03F7/20 ,  G03F7/2022 ,  G03F7/30 ,  G03F7/38 ,  G03F7/70466 ,  Y10S430/12

    摘要： A method. The method forms a film of photoresist composition on a substrate and exposes a first and second region of the film to radiation through a first and second mask having a first and second image pattern, respectively. The photoresist composition includes a polymer including labile group(s), base soluble group(s), a photosensitive acid generator, and a photosensitive base generator. The photosensitive acid generator generates first and second amounts of acid upon exposure to first and second doses of radiation, respectively. The second amount of acid exceeds the first amount of acid. The second dose of radiation exceeds the first dose of radiation. The photosensitive base generator generates a first and second amount of base upon exposure to the first and second dose of radiation, respectively. The first amount of base exceeds the first amount of acid. The second amount of acid exceeds the second amount of base.

    摘要翻译： 一个方法。 该方法在衬底上形成光致抗蚀剂组合物的膜，并分别通过具有第一和第二图像图案的第一和第二掩模使膜的第一和第二区域暴露于辐射。 光致抗蚀剂组合物包括包含不稳定基团，碱溶性基团，光敏酸发生剂和感光基底发生剂的聚合物。 感光酸发生器分别在暴露于第一和第二剂量的辐射时产生第一和第二量的酸。 第二量的酸超过第一量的酸。 第二剂辐射超过第一剂量的辐射。 光敏底物发生器分别在暴露于第一和第二剂量的辐射时产生第一和第二量的碱。 碱的第一量超过第一量的酸。 第二量的酸超过第二量的碱。

    PHOTORESIST COMPOSITIONS AND METHOD FOR MULTIPLE EXPOSURES WITH MULTIPLE LAYER RESIST SYSTEMS
    10.
    发明申请
    PHOTORESIST COMPOSITIONS AND METHOD FOR MULTIPLE EXPOSURES WITH MULTIPLE LAYER RESIST SYSTEMS 有权
    多层耐蚀系统多光照的组合物和方法

    公开(公告)号：US20090155715A1

    公开(公告)日：2009-06-18

    申请号：US12356187

    申请日：2009-01-20

    申请人： Kuang-Jung Chen ,  Wu-Song Huang ,  Wai-Kin Li ,  Pushkara Rao Varanasi ,  Sen Liu

    发明人： Kuang-Jung Chen ,  Wu-Song Huang ,  Wai-Kin Li ,  Pushkara Rao Varanasi ,  Sen Liu

    IPC分类号： G03F7/20 ,  G03F7/004

    CPC分类号： G03F7/0045 ,  G03F7/0035 ,  G03F7/0397 ,  G03F7/40

    摘要： A method and a resist composition. The resist composition includes a polymer having repeating units having a lactone moiety, a thermal base generator capable of generating a base and a photosensitive acid generator. The polymer has the properties of being substantially soluble in a first solvent and becoming substantially insoluble after heating the polymer. The method includes forming a film of a photoresist including a polymer, a thermal base generator capable of releasing a base, a photosensitive acid generator, and a solvent. The film is patternwise imaged. The imaging includes exposing the film to radiation, resulting in producing an acid catalyst. The film is developed in an aqueous base, resulting in removing base-soluble regions and forming a patterned layer. The patterned layer is baked above the temperature, resulting in the thermal base generator releasing a base within the patterned layer and the patterned layer becoming insoluble in the solvent.

    摘要翻译： 一种方法和抗蚀剂组合物。 抗蚀剂组合物包括具有内酯部分的重复单元的聚合物，能够产生碱的热碱发生剂和感光酸产生剂。 聚合物具有基本上可溶于第一溶剂的性质，并且在加热聚合物之后变得基本上不溶。 该方法包括形成包含聚合物的光致抗蚀剂膜，能够释放碱的热碱发生器，光敏酸产生剂和溶剂。 该影片被图案化成像。 成像包括将膜暴露于辐射，导致产生酸催化剂。 该膜在水性碱中显影，导致去除碱溶性区域并形成图案层。 图案化层被烘烤高于该温度，导致热基发生器释放图案化层内的基底并且图案化层变得不溶于溶剂。