摘要:
A detergent composition comprising at most 15% by weight of phosphate builder(s) and aluminosilicate builder(s), and comprising at least one short chain anionic surfactant selected from alkyl sulfate surfactant(s) and alkyl sulfonate surfactants.
摘要:
A detergent composition comprising at most 15% by weight of phosphate builder(s) and aluminosilicate builder(s), and comprising at least one short chain anionic surfactant selected from alkyl sulfate surfactant(s) and alkyl sulfonate surfactants.
摘要:
A detergent composition having improved sudsing profile comprising 0.2% to 6% by weight of a suds boosting co-surfactant having the formula R—O—(CH2CH2O)nSO3−M+, wherein R is a branched or unbranched alkyl group having 8 to 16 carbon atoms, n is an integer from 0 to 3, M is a cation of alkali metal, alkaline earth metal or ammonium; 0.01% to 5% by weight of a surface active polymer having the properties: (i) the surface tension of a 39 ppm polymer solution in distilled water is from 40 mN/m to 65 mN/m as measured at 25° C. by a tensiometer; and (ii) the viscosity of a 500 ppm polymer solution in distilled water is from 0.0009 to 0.003 Pa·S as measured at 25° C. by a rheometer; and 6% to 15% by weight of a main surfactant system. The total surfactant level in the detergent composition is less than 20% and the phosphate and/or aluminosilicate builder level in the detergent composition is less than 15% by weight.
摘要:
A method of forming different structures of a semiconductor device using a single mask and a hybrid photoresist. The method includes: applying a first photoresist layer on a semiconductor substrate; patterning the first photoresist layer using a photomask to form a first patterned photoresist layer; using the first patterned photoresist layer to form a first structure of a semiconductor device; removing the first patterned photoresist layer; applying a second photoresist layer on the semiconductor substrate; patterning the second photoresist layer using the photomask to form a second patterned photoresist layer; using the second patterned photoresist layer to form a second structure of a semiconductor device; removing the second patterned photoresist layer; and wherein either the first or the second photoresist layer is a hybrid photoresist layer comprising a hybrid photoresist.
摘要:
The present invention relates to a fluorine-free photoacid generator (PAG) and a photoresist composition containing the same. The PAG is characterized by the presence of an onium cationic component and a fluorine-free fused ring heteroaromatic sulfonate anionic component containing one or more electron withdrawing substituents. The onium cationic component of the PAG is preferably a sulfonium or an iodonium cation. The photoresist composition further contains an acid sensitive imaging polymer. The photoresist composition is especially useful for forming material patterns on a semiconductor substrate using 193 nm (ArF) lithography.
摘要:
The present invention relates to a fluorine-free photoacid generator (PAG) and a photoresist composition containing the same. The PAG is characterized by the presence of an onium cationic component and a fluorine-free fused ring heteroaromatic sulfonate anionic component containing one or more electron withdrawing substituents. The onium cationic component of the PAG is preferably a sulfonium or an iodonium cation. The photoresist composition further contains an acid sensitive imaging polymer. The photoresist composition is especially useful for forming material patterns on a semiconductor substrate using 193 nm (ArF) lithography.
摘要:
A curable liquid formulation containing at least (i) one or more near-infrared absorbing triphenylamine-based dyes, and (ii) one or more casting solvents. The invention is also directed to solid near-infrared absorbing films composed of crosslinked forms of the curable liquid formulation. The invention is also directed to a microelectronic substrate containing a coating of the solid near-infrared absorbing film as well as a method for patterning a photoresist layer coated on a microelectronic substrate in the case where the near-infrared absorbing film is between the microelectronic substrate and a photoresist film.
摘要:
A method. The method forms a film of photoresist composition on a substrate and exposes a first and second region of the film to radiation through a first and second mask having a first and second image pattern, respectively. The photoresist composition includes a polymer including labile group(s), base soluble group(s), a photosensitive acid generator, and a photosensitive base generator. The photosensitive acid generator generates first and second amounts of acid upon exposure to first and second doses of radiation, respectively. The second amount of acid exceeds the first amount of acid. The second dose of radiation exceeds the first dose of radiation. The photosensitive base generator generates a first and second amount of base upon exposure to the first and second dose of radiation, respectively. The first amount of base exceeds the first amount of acid. The second amount of acid exceeds the second amount of base.
摘要:
A method and a resist composition. The resist composition includes a polymer having repeating units having a lactone moiety, a thermal base generator capable of generating a base and a photosensitive acid generator. The polymer has the properties of being substantially soluble in a first solvent and becoming substantially insoluble after heating the polymer. The method includes forming a film of a photoresist including a polymer, a thermal base generator capable of releasing a base, a photosensitive acid generator, and a solvent. The film is patternwise imaged. The imaging includes exposing the film to radiation, resulting in producing an acid catalyst. The film is developed in an aqueous base, resulting in removing base-soluble regions and forming a patterned layer. The patterned layer is baked above the temperature, resulting in the thermal base generator releasing a base within the patterned layer and the patterned layer becoming insoluble in the solvent.