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公开(公告)号：US20220084819A1
公开(公告)日：2022-03-17
申请号：US17536252
申请日：2021-11-29
发明人： Kenji ISO , Yuuki ENATSU , Kenji SHIMOYAMA
摘要： Provided are: a GaN substrate wafer having a crystallinity suitable as a substrate for a semiconductor device as well as an improved productivity; and a method of producing the same. The GaN substrate wafer is a (0001)-oriented GaN substrate wafer that includes a first region arranged on an N-polar side and a second region arranged on a Ga-polar side via a regrowth interface therebetween. In this GaN substrate wafer, the second region has a minimum thickness of not less than 20 μm, the concentration of at least one element selected from Li, Na, K, F, Cl, Br, and I in the first region is 1×1015 atoms/cm3 or higher, and the second region satisfies one or more conditions selected from the following (a) to (c): (a) the Si concentration is 5×1016 atoms/cm3 or higher; (b) the O concentration is 3×1016 atoms/cm3 or lower; and (c) the H concentration is 1×1017 atoms/cm3 or lower.
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2.发明申请公开(公告)号：US20180258552A1
公开(公告)日：2018-09-13
申请号：US15976891
申请日：2018-05-11
发明人： Yuuki ENATSU , Satoru NAGAO , Shuichi KUBO , Hirotaka IKEDA , Kenji FUJITO
CPC分类号： C30B29/406 , C30B25/02 , C30B25/14 , C30B25/20 , C30B29/403 , H01L21/02389 , H01L21/02433 , H01L21/0254 , H01L21/0262 , H01L21/02634 , H01L29/2003
摘要： A periodic table Group 13 metal nitride crystals grown with a non-polar or semi-polar principal surface have numerous stacking faults. The purpose of the present invention is to provide a period table Group 13 metal nitride crystal wherein the occurrence of stacking faults of this kind are suppressed. The present invention achieves the foregoing by a periodic table Group 13 metal nitride crystal being characterized in that, in a Qx direction intensity profile that includes a maximum intensity and is derived from an isointensity contour plot obtained by x-ray reciprocal lattice mapping of (100) plane of the periodic table Group 13 metal nitride crystal, a Qx width at 1/300th of peak intensity is 6×10−4 rlu or less.
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3.发明公开公开(公告)号：US20240282921A1
公开(公告)日：2024-08-22
申请号：US18646860
申请日：2024-04-26
发明人： Yuuki ENATSU , Naoto MARU , Tooru FUSE
IPC分类号： H01M4/36 , H01M4/02 , H01M4/04 , H01M4/1393 , H01M4/1395 , H01M4/38 , H01M4/583
CPC分类号： H01M4/364 , H01M4/0404 , H01M4/1393 , H01M4/1395 , H01M4/386 , H01M4/583 , H01M2004/021 , H01M2004/027
摘要： Particles may have a chromaticity b* of 2.0 or less. Such particles may include graphite (A) and particles (B) containing a silicon element. The chromaticity b* of the particles is preferably 0.2 or more and 1.1 or less, and the chromaticity a* of the particles is preferably 0.2 or more and 1.2 or less. A method can manufacture a secondary battery including a positive electrode, a negative electrode, and an electrolyte, wherein the negative electrode includes a current collector and a negative electrode active material layer disposed on the current collector, and the negative electrode active material layer contains such graphite.
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4.发明公开公开(公告)号：US20240279844A1
公开(公告)日：2024-08-22
申请号：US18623278
申请日：2024-04-01
发明人： Kenji ISO , Tatsuya TAKAHASHI , Tae MOCHIZUKI , Yuuki ENATSU
IPC分类号： C30B29/40 , C23C16/34 , C30B25/20 , H01L21/02 , H01L29/04 , H01L29/20 , H01L29/36 , H01L33/00 , H01L33/02 , H01L33/16 , H01L33/32
CPC分类号： C30B29/406 , C23C16/34 , C30B25/20 , H01L21/02389 , H01L21/0254 , H01L21/02576 , H01L29/045 , H01L29/2003 , H01L29/36 , H01L33/0075 , H01L33/025 , H01L33/16 , H01L33/32
摘要： Provided is an n-type GaN crystal, in which a donor impurity contained at the highest concentration is Ge, and which has a room-temperature resistivity of lower than 0.03 Ω·cm and a (004) XRD rocking curve FWHM of less than 20 arcsec. The n-type GaN crystal has two main surfaces, each having an area of 3 cm2 or larger. One of the two main surfaces can have a Ga polarity and can be inclined at an angle of 0° to 10° with respect to a (0001) crystal plane. Further, the n-type GaN crystal can have a diameter of 20 mm or larger.
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公开(公告)号：US20210384336A1
公开(公告)日：2021-12-09
申请号：US17406218
申请日：2021-08-19
发明人： Yuuki ENATSU , Yuichi OSHIMA
IPC分类号： H01L29/778 , H01L29/20 , H01L29/66 , H01L21/02
摘要： Provided are a GaN crystal used in a substrate for a nitride semiconductor device having a horizontal device structure such as GaN-HEMT, and a substrate used for production of a nitride semiconductor device having a horizontal device structure such as GaN-HEMT. The Gab crystal has a (0001) surface having an area of not less than 5 cm2, the (0001) surface having an inclination of not more than 10° with respect to the (0001) crystal plane, wherein the Fe concentration is not less than 5×1017 atoms/cm3 and less than 1×109 atoms/cm3, and wherein the total donor impurity concentration is less than 5×1016 atoms/cm3.
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公开(公告)号：US20210164127A1
公开(公告)日：2021-06-03
申请号：US17176237
申请日：2021-02-16
发明人： Kenji ISO , Tatsuya TAKAHASHI , Tae MOCHIZUKI , Yuuki ENATSU
IPC分类号： C30B29/40 , H01L29/04 , H01L29/20 , H01L29/36 , H01L33/00 , H01L33/02 , H01L33/16 , H01L33/32 , H01L21/02 , C30B25/20 , C23C16/34
摘要： Provided is an n-type GaN crystal, in which a donor impurity contained at the highest concentration is Ge, and which has a room-temperature resistivity of lower than 0.03 Ω·cm and a (004) XRD rocking curve FWHM of less than 20 arcsec. The n-type GaN crystal has two main surfaces, each having an area of 2 cm2 or larger. One of the two main surfaces can have a Ga polarity and can be inclined at an angle of 0° to 10° with respect to a (0001) crystal plane. Further, the n-type GaN crystal can have a diameter of 20 mm or larger.
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公开(公告)号：US20220084820A1
公开(公告)日：2022-03-17
申请号：US17536396
申请日：2021-11-29
发明人： Yuuki ENATSU , Kenji ISO
摘要： Provided is a GaN substrate wafer with an improved productivity, which can be preferably used in the production of a nitride semiconductor device having a horizontal device structure. The GaN substrate wafer is a (0001)-oriented GaN substrate wafer that includes a first region arranged on an N-polar side and a second region, which is arranged on a Ga-polar side and has a minimum thickness, via a regrowth interface therebetween. In this GaN substrate wafer, the second region has a minimum thickness of not less than 20 μm, and at least a portion of the second region has a total compensating impurity concentration of 1×1017 atoms/cm3 or higher.
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公开(公告)号：US20170338112A1
公开(公告)日：2017-11-23
申请号：US15675230
申请日：2017-08-11
发明人： Kenji ISO , Yuuki ENATSU , Hiromitsu KIMURA
CPC分类号： H01L21/02389 , C30B25/04 , C30B25/18 , C30B29/406 , H01L21/0254 , H01L21/0257 , H01L21/02576 , H01L21/02609 , H01L21/0262 , H01L21/02647
摘要： Provides is a C-plane GaN substrate which, although formed from a GaN crystal grown so that surface pits are generated, is free from any inversion domain, and moreover, has a low spiral dislocation density in a gallium polar surface. Provides is a C-plane GaN substrate wherein: the substrate comprises a plurality of facet growth areas each having a closed ring outline-shape on a gallium polar surface; the spiral dislocation density is less than 1×106 cm−2 anywhere on the gallium polar surface; and the substrate is free from any inversion domain. The C-plane GaN substrate may comprise a high dislocation density part having a dislocation density of more than 1×107 cm−2 and a low dislocation density part having a dislocation density of less than 1×106 cm−2 on the gallium polar surface.
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9.发明申请公开(公告)号：US20180057960A1
公开(公告)日：2018-03-01
申请号：US15800128
申请日：2017-11-01
发明人： Yuuki ENATSU , Satoru NAGAO , Shuichi KUBO , Hirotaka IKEDA , Kenji FUJITO
CPC分类号： C30B29/406 , C30B25/02 , C30B25/14 , C30B25/20 , C30B29/403 , H01L21/02389 , H01L21/02433 , H01L21/0254 , H01L21/0262 , H01L21/02634 , H01L29/2003
摘要： A periodic table Group 13 metal nitride crystals grown with a non-polar or semi-polar principal surface have numerous stacking faults. The purpose of the present invention is to provide a period table Group 13 metal nitride crystal wherein the occurrence of stacking faults of this kind are suppressed. The present invention achieves the foregoing by a periodic table Group 13 metal nitride crystal being characterized in that, in a Qx direction intensity profile that includes a maximum intensity and is derived from an isointensity contour plot obtained by x-ray reciprocal lattice mapping of (100) plane of the periodic table Group 13 metal nitride crystal, a Qx width at 1/300th of peak intensity is 6×10−4 rlu or less.
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公开(公告)号：US20170352721A1
公开(公告)日：2017-12-07
申请号：US15681971
申请日：2017-08-21
发明人： Kenji ISO , Hiromitsu KIMURA , Yuya SAITO , Yuuki ENATSU
CPC分类号： H01L29/045 , C23C16/34 , C30B25/04 , C30B29/406 , H01L21/02389 , H01L21/0242 , H01L21/02433 , H01L21/02458 , H01L21/02516 , H01L21/0254 , H01L21/02576 , H01L21/0262 , H01L21/02639 , H01L21/02647 , H01L29/0603 , H01L29/2003
摘要： A C-plane GaN substrate only mildly restricts the shape and dimension of a nitride semiconductor device formed on the substrate. The variation of an off-angle on the main surface of the substrate is suppressed. In the C-plane GaN substrate: the substrate comprises a plurality of facet growth areas each having a closed ring outline-shape on the main surface; the number density of the facet growth area accompanied by a core among the plurality of facet growth areas is less than 5 cm−2 on the main surface; and, when any circular area of 4 cm diameter is selected from an area which is on the main surface and is distant by 5 mm or more from the outer peripheral edge of the substrate, the variation widths of an a-axis direction component and an m-axis direction component of an off-angle within the circular area is each 0.25 degrees or less.
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