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公开(公告)号：US06876002B2
公开(公告)日：2005-04-05
申请号：US10129549
申请日：2001-07-03
CPC分类号： H01S5/16 , H01S5/162 , H01S5/168 , H01S5/2231
摘要： A semiconductor laser element includes, on a substrate, at least a first conductive type first clad layer, an active layer, a second conductive type second clad layer, a current block layer having a stripe-shaped deficient portion extending in a direction of a resonator, a second conductive type third clad layer buried in the stripe-shaped deficient portion of the current block layer and a second conductive type protection layer provided on the third clad layer. The active layer includes at least a window region adjacent to its one end surface and an internal region having a quantum well structure, and a portion opposite to the internal region is irradiated with an ionized atom from a surface of a layer arranged on the second conductive type second clad layer side and thereafter subjected to heat treatment to form the window region. A peak wavelength λw of photoluminescence from the window region of the active layer has a relation of: λw≦λi−5 nm with respect to a peak wavelength λi of photoluminescence from the internal region of the active layer, and a half-width of the photoluminescence from the window region is narrower than a half-width of the photoluminescence from the internal region.
摘要翻译： 半导体激光元件在基板上包括至少第一导电型第一覆盖层，有源层，第二导电型第二覆盖层，具有在谐振器的方向上延伸的条状缺陷部的电流阻挡层 埋置在当前阻挡层的条形缺陷部分中的第二导电型第三覆盖层和设置在第三覆盖层上的第二导电型保护层。 活性层至少包括与其一个端面相邻的窗口区域和具有量子阱结构的内部区域，并且与内部区域相反的部分被照射来自布置在第二导电层上的层的表面的电离原子 然后进行热处理以形成窗口区域。 来自有源层的窗口区域的光致发光的峰值波长长度与来自有源层的内部区域的光致发光的峰值波长范围有关，并且来自窗口区域的光致发光的半峰宽是 窄于来自内部区域的光致发光的半宽度。
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公开(公告)号：US06798808B1
公开(公告)日：2004-09-28
申请号：US09492803
申请日：2000-01-28
IPC分类号： H01S500
CPC分类号： H01S5/32308
摘要： In a semiconductor laser device having a quantum well active layer, an undoped thin spacer layer is formed between an undoped optical guide layer and a p-type cladding layer. The thickness of the spacer layer is preferably 5 nm or more but less than 10 nm. The spacer layer absorbs impurities diffusing thereinto from the p-type cladding layer. Thus, the dopant is prevented from being diffused into the undoped optical guide layer.
摘要翻译： 在具有量子阱有源层的半导体激光器件中，在未掺杂的光导层和p型覆层之间形成未掺杂的间隔层。 间隔层的厚度优选为5nm以上且小于10nm。 间隔层吸收从p型包层扩散的杂质。 因此，防止掺杂剂扩散到未掺杂的光导层中。
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3.发明授权Semiconductor light emitting device with both carbon and group II element atoms as p-type dopants and method for producing the same 失效具有碳和II族元素原子的半导体发光器件作为p型掺杂剂及其制造方法公开(公告)号：US06181723B2
公开(公告)日：2001-01-30
申请号：US09073106
申请日：1998-05-05
IPC分类号： H01S500
CPC分类号： H01L33/305 , H01L33/145 , H01S5/2206 , H01S5/2226 , H01S5/2227 , H01S5/2231 , H01S5/305 , H01S5/3054
摘要： A light emitting device includes: a plurality of n-type III-V group compound semiconductor layers; a plurality of p-type III-V group compound semiconductor layers; and an active layer. Carbon atoms and II-group element atoms are both added to at least one of the plurality of p-type III-V group compound semiconductor layers. Alternatively, carbon atoms and Si atoms are both added to at least one of the plurality of n-type III-V group compound semiconductor layers. Another semiconductor light emitting device has a current blocking structure formed on the double hetero (DH) junction structure, and the current blocking structure at least includes a two-layered n-type current blocking layers including a Se-doped n-type first current blocking layer provided closer to the DH junction structure and a Si-doped n-type second current blocking layer formed on the n-type first current blocking layer.
摘要翻译： 发光器件包括：多个n型III-V族化合物半导体层; 多个p型III-V族化合物半导体层; 和活性层。 碳原子和II族元素原子都被添加到多个p型III-V族化合物半导体层中的至少一个中。 或者，碳原子和Si原子都被添加到多个n型III-V族化合物半导体层中的至少一个中。 另一半导体发光器件具有形成于双异质（DH）结结构上的电流阻挡结构，并且电流阻挡结构至少包括两层n型电流阻挡层，其包括Se掺杂n型第一电流阻塞 提供更靠近DH结结构的层，以及形成在n型第一电流阻挡层上的Si掺杂的n型第二电流阻挡层。
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4.发明授权
公开(公告)号：US5815615A
公开(公告)日：1998-09-29
申请号：US579437
申请日：1995-12-27
IPC分类号： G02B6/122 , G02B6/12 , G02B6/125 , G02B6/13 , G02B6/34 , G02B6/42 , G02F2/00 , H01L27/15 , H01S5/00 , H01S5/026 , H01S5/042 , H01S5/12 , H01S5/22 , H01S5/223 , H01S5/323 , H01S5/40 , H01S5/50 , G02B6/26
CPC分类号： G02B6/4246 , G02B6/12004 , G02B6/12007 , G02B6/125 , G02B6/42 , H01S5/026 , G02B2006/12104 , G02B6/29361 , H01S5/0262 , H01S5/12 , H01S5/22 , H01S5/223 , H01S5/32316 , H01S5/4031 , H01S5/4056 , H01S5/50
摘要： The integrated optical control element of this invention includes: a first waveguide for allowing light incident from outside to propagate therein; a multilayer structure for allowing the light which has propagated in the first waveguide to be incident thereon and for transmitting the light therethrough or reflecting the light therefrom, the multilayer structure including at least one layer having a refractive index different from an equivalent refractive index of a region with which the at least one layer is in contact; and a second waveguide for receiving at least part of the light transmitted through or reflected from the multilayer structure.
摘要翻译： 本发明的集成光学控制元件包括：用于允许从外部入射的光在其中传播的第一波导; 用于允许在第一波导中传播的光入射在其上并用于透射光或反射光的多层结构，所述多层结构包括至少一层折射率不同于 所述至少一层与其接触的区域; 以及第二波导，用于接收透射通过或从多层结构反射的光的至少一部分。
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公开(公告)号：US5335241A
公开(公告)日：1994-08-02
申请号：US751923
申请日：1991-08-30
CPC分类号： H01S5/227 , H01L33/0062 , H01S5/2201 , H01S5/32391
摘要： A buried stripe type semiconductor laser device having a mesa stripe whose side faces are {111} facets and having a current confinement structure under epitaxial layers burying the mesa stripe is disclosed. The buried stripe type semiconductor laser device comprises a (100) semiconductor substrate having a stripe-shaped ridge in the direction, a multi-layer film of a double hetero structure formed on the upper surface of the stripe-shaped ridge. The mutil-layer film includes a laser oscillating active layer of a smaller width than that of the stripe-shaped ridge. The current confinement means are formed at both sides of the mesa stripe on the semiconductor substrate. In addition, a method of fabricating a buried stripe type semiconductor laser device having no raised portion above a mesa stripe of a substrate is disclosed. The laser device can be mounted in position with the epitaxial layer side down, without the mesa stripe being damaged or strained.
摘要翻译： 公开了一种埋设条状半导体激光器件，其具有侧面为{111}面的台面条，并且在埋设台面条的外延层下具有电流限制结构。 掩埋条型半导体激光器件包括具有<011>方向上的条状脊的（100）半导体衬底，形成在条形脊的上表面上的双异质结的多层膜。 残膜层包括宽度小于条状脊的激光振荡活性层。 电流限制装置形成在半导体衬底上的台面条的两侧。 另外，公开了一种在衬底的台面条之上没有凸起部分的掩埋条状半导体激光器件的制造方法。 激光器件可以安装在外延层一侧的位置，而不会使台面条被损坏或变形。
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公开(公告)号：US5011550A
公开(公告)日：1991-04-30
申请号：US193400
申请日：1988-05-12
申请人： Fumihiro Konushi , Akinori Seki , Jun Kudo , Masayoshi Koba
发明人： Fumihiro Konushi , Akinori Seki , Jun Kudo , Masayoshi Koba
IPC分类号： H01L21/20 , H01L21/205
CPC分类号： H01L21/02543 , H01L21/02381 , H01L21/02463 , H01L21/0262 , H01L21/02658 , Y10S438/933
摘要： A laminated structure of compound semiconductors comprising a IV semiconductor underlying substrate, a first III-V compound semiconductor layer that is formed as an intermediate layer on the IV compound semiconductor underlying substrate, and a second III-V compound semiconductor layer that is formed on the intermediate layer, wherein the thermal expansion coefficients of the IV compound semiconductor underlying substrate, E.sub.ts, the first III-V compound semiconductor layer, E.sub.t1, and the second III-V compound semicondductor layer, E.sub.t2, have the following relationship: E.sub.t1 >E.sub.t2 >E.sub.ts.
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公开(公告)号：US06885085B2
公开(公告)日：2005-04-26
申请号：US10351609
申请日：2003-01-27
IPC分类号： H01S5/22 , H01S5/227 , H01S5/34 , H01S5/343 , H01L23/552
CPC分类号： B82Y20/00 , H01S5/2206 , H01S5/3403 , H01S5/3434 , H01S5/34373 , H01S5/34386
摘要： A semiconductor laser device has an n-type AlGaAs first cladding layer 2, a multiple quantum well active layer 3, and a p-type AlGaAs second cladding layer 4 formed in this order and supported by an n-type GaAs substrate 1. The multiple quantum well active layer 3 has two quantum well layers 3a and barrier layers 3b provided on both sides of each quantum well layer 3a. The quantum well layers 3a are each made of In1-v1Gav1As1-w1Pw1, while the barrier layers 3b are each made of In1-v2Gav2As1-w2Pw2. Here, v1 and v2 satisfy v1
摘要翻译： 半导体激光器件具有依次形成并由n型GaAs衬底1支撑的n型AlGaAs第一覆层2，多量子阱有源层3和p型AlGaAs第二覆层4。 量子阱活性层3具有设置在每个量子阱层3a两侧的两个量子阱层3a和势垒层3b。 量子阱层3a分别由In 1-v1＆lt; 1＆lt; 1＆lt; 1＆lt; 1＆lt; 1＆gt; ，而阻挡层3b分别由In 1-v2＆lt; 2＆gt;＆lt; 1＆gt; 1-w2＆lt; W 2＆lt; >。 这里，v 1和v 2满足v 1
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公开(公告)号：US5838854A
公开(公告)日：1998-11-17
申请号：US955161
申请日：1997-10-21
IPC分类号： G02B6/122 , G02B6/12 , G02B6/125 , G02B6/13 , G02B6/34 , G02B6/42 , G02F2/00 , H01L27/15 , H01S5/00 , H01S5/026 , H01S5/042 , H01S5/12 , H01S5/22 , H01S5/223 , H01S5/323 , H01S5/40 , H01S5/50 , G02B1/295 , G02B6/26
CPC分类号： G02B6/4246 , G02B6/12004 , G02B6/12007 , G02B6/125 , G02B6/42 , H01S5/026 , G02B2006/12104 , G02B6/29361 , H01S5/0262 , H01S5/12 , H01S5/22 , H01S5/223 , H01S5/32316 , H01S5/4031 , H01S5/4056 , H01S5/50
摘要： The integrated optical control element of this invention includes: a first waveguide for allowing light incident from outside to propagate therein; a multilayer structure for allowing the light which has propagated in the first waveguide to be incident thereon and for transmitting the light therethrough or reflecting the light therefrom, the multilayer structure including at least one layer having a refractive index different from an equivalent refractive index of a region with which the at least one layer is in contact; and a second waveguide for receiving at least part of the light transmitted through or reflected from the multilayer structure.
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公开(公告)号：US5375135A
公开(公告)日：1994-12-20
申请号：US48887
申请日：1993-04-15
CPC分类号： B82Y20/00 , H01S5/34 , H01S2301/18 , H01S5/1039 , H01S5/227 , H01S5/2275 , H01S5/3415 , H01S5/3421 , H01S5/34306 , H01S5/3434
摘要： A semiconductor laser device includes a substrate and a laminated structure formed on a top face of the substrate. The laminated structure includes (a) first and second guide layers and (b) a quantum well structure of compound semiconductor interposed between the first and second guide layers. The quantum well structure serves as a resonator of the device and includes at least one quantum well layer and at least one barrier layer. The quantum well layer has a thickness L.sub.z and the barrier layer has the energy gap larger than the energy gap of the quantum well layer so as to form a energy difference V.sub.0 between the bottom of the conduction band of the quantum well layer and the bottom of the conduction band of the barrier layer. The relationship represented by formula (I) is satisfied:L.sub.z
摘要翻译： 半导体激光装置包括基板和形成在基板顶面上的叠层结构。 层压结构包括（a）第一和第二引导层和（b）置于第一和第二引导层之间的化合物半导体的量子阱结构。 量子阱结构用作器件的谐振器，并且包括至少一个量子阱层和至少一个势垒层。 量子阱层具有厚度Lz，势垒层的能隙大于量子阱层的能隙，从而在量子阱层的导带的底部和底部的量子阱层的底部之间形成能量差V0 阻挡层的导带。 满足式（I）所示的关系：Lz
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公开(公告)号：US5351258A
公开(公告)日：1994-09-27
申请号：US99206
申请日：1993-07-29
CPC分类号： B82Y20/00 , H01S5/22 , H01S5/34306 , H01S5/34313
摘要： A semiconductor laser device of the present invention includes: a semiconductor substrate having a top face and a bottom face; a multi-layered structure formed on the top face of the semiconductor substrate, the multi-layered structure including an active layer; a stripe-shaped ridge portion which is formed on a first region of a top face of the multi-layered structure and which extends along a cavity length direction; a current blocking layer which covers both side faces of the ridge portion and a second region of the top face of the multi-layered structure; a first electrode formed at least on a top face of the ridge portion; and a second electrode formed on the bottom face of the semiconductor substrate, wherein the current blocking layer includes an insulating film and a resin film formed on the insulating film.
摘要翻译： 本发明的半导体激光器件包括：具有顶面和底面的半导体衬底; 形成在所述半导体衬底的顶面上的多层结构，所述多层结构包括有源层; 形成在所述多层结构的顶面的第一区域上且沿着空腔长度方向延伸的条状的脊部; 覆盖所述脊部的两个侧面的电流阻挡层和所述多层结构的顶面的第二区域; 至少形成在所述脊部的顶面上的第一电极; 以及形成在所述半导体衬底的底面上的第二电极，其中所述电流阻挡层包括绝缘膜和形成在所述绝缘膜上的树脂膜。
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