公开(公告)号：US06876002B2

公开(公告)日：2005-04-05

申请号：US10129549

申请日：2001-07-03

申请人： Mitsuhiro Matsumoto ,  Fumihiro Konushi ,  Shinichi Kawato

发明人： Mitsuhiro Matsumoto ,  Fumihiro Konushi ,  Shinichi Kawato

IPC分类号： H01S5/16 ,  H01S5/223 ,  H01S5/343 ,  H01I27/15

CPC分类号： H01S5/16 ,  H01S5/162 ,  H01S5/168 ,  H01S5/2231

摘要： A semiconductor laser element includes, on a substrate, at least a first conductive type first clad layer, an active layer, a second conductive type second clad layer, a current block layer having a stripe-shaped deficient portion extending in a direction of a resonator, a second conductive type third clad layer buried in the stripe-shaped deficient portion of the current block layer and a second conductive type protection layer provided on the third clad layer. The active layer includes at least a window region adjacent to its one end surface and an internal region having a quantum well structure, and a portion opposite to the internal region is irradiated with an ionized atom from a surface of a layer arranged on the second conductive type second clad layer side and thereafter subjected to heat treatment to form the window region. A peak wavelength λw of photoluminescence from the window region of the active layer has a relation of: λw≦λi−5 nm with respect to a peak wavelength λi of photoluminescence from the internal region of the active layer, and a half-width of the photoluminescence from the window region is narrower than a half-width of the photoluminescence from the internal region.

摘要翻译： 半导体激光元件在基板上包括至少第一导电型第一覆盖层，有源层，第二导电型第二覆盖层，具有在谐振器的方向上延伸的条状缺陷部的电流阻挡层 埋置在当前阻挡层的条形缺陷部分中的第二导电型第三覆盖层和设置在第三覆盖层上的第二导电型保护层。 活性层至少包括与其一个端面相邻的窗口区域和具有量子阱结构的内部区域，并且与内部区域相反的部分被照射来自布置在第二导电层上的层的表面的电离原子 然后进行热处理以形成窗口区域。 来自有源层的窗口区域的光致发光的峰值波长长度与来自有源层的内部区域的光致发光的峰值波长范围有关，并且来自窗口区域的光致发光的半峰宽是 窄于来自内部区域的光致发光的半宽度。

公开(公告)号：US06798808B1

公开(公告)日：2004-09-28

申请号：US09492803

申请日：2000-01-28

申请人： Fumihiro Konushi ,  Nobuhiro Ohkubo ,  Shinichi Kawato

发明人： Fumihiro Konushi ,  Nobuhiro Ohkubo ,  Shinichi Kawato

IPC分类号： H01S500

CPC分类号： H01S5/32308

摘要： In a semiconductor laser device having a quantum well active layer, an undoped thin spacer layer is formed between an undoped optical guide layer and a p-type cladding layer. The thickness of the spacer layer is preferably 5 nm or more but less than 10 nm. The spacer layer absorbs impurities diffusing thereinto from the p-type cladding layer. Thus, the dopant is prevented from being diffused into the undoped optical guide layer.

摘要翻译： 在具有量子阱有源层的半导体激光器件中，在未掺杂的光导层和p型覆层之间形成未掺杂的间隔层。 间隔层的厚度优选为5nm以上且小于10nm。 间隔层吸收从p型包层扩散的杂质。 因此，防止掺杂剂扩散到未掺杂的光导层中。

公开(公告)号：US07558306B2

公开(公告)日：2009-07-07

申请号：US11134519

申请日：2005-05-23

申请人： Masanori Watanabe ,  Shinichi Kawato ,  Mitsuhiro Matsumoto

发明人： Masanori Watanabe ,  Shinichi Kawato ,  Mitsuhiro Matsumoto

IPC分类号： H01S5/00

CPC分类号： H01S5/2231 ,  B82Y20/00 ,  H01S5/028 ,  H01S5/0287 ,  H01S5/0425 ,  H01S5/1014 ,  H01S5/1039 ,  H01S5/162 ,  H01S5/168 ,  H01S5/2022 ,  H01S5/2214 ,  H01S5/2219 ,  H01S5/3211 ,  H01S5/34326 ,  H01S5/3436 ,  H01S2301/18

摘要： In a semiconductor laser device of the invention, a ridge portion 150 forms a waveguide, and guided light goes along the ridge portion 150. A tail of the guided layer is present also at first side portions 151, while second side portions 152 are regions which the tail of the guided light does not reach. Meanwhile, scattered light generated from the ridge portion 150 goes through the first side portions 15, spreading into the second side portions 152. In the second side portions 152, a light absorption layer 127 serving as a light absorber is formed on the first upper clad layer 108, where the scattered light is absorbed. As a result of the absorption of scattered light in the second side portions 152, ripples of radiation light are reduced. Also since the light absorption layer 127 is in electrical contact with a p-side ohmic electrode 125, the problem of charge accumulation to the light absorption layer 127 can be avoided.

摘要翻译： 在本发明的半导体激光装置中，脊部150形成波导管，导光部沿着脊部150延伸。被引导层的尾部也存在于第一侧部151，而第二侧部152是 引导灯的尾巴没有达到。 同时，从脊部150产生的散射光穿过第一侧部15，扩展到第二侧部152.在第二侧部152中，作为光吸收体的光吸收层127形成在第一上部包层 层108，其中散射的光被吸收。 作为第二侧部152中散射光的吸收的结果，辐射光的波纹减小。 此外，由于光吸收层127与p侧欧姆电极125电接触，因此可以避免对光吸收层127的电荷积聚的问题。

公开(公告)号：US20060007976A1

公开(公告)日：2006-01-12

申请号：US11134519

申请日：2005-05-23

申请人： Masanori Watanabe ,  Shinichi Kawato ,  Mitsuhiro Matsumoto

发明人： Masanori Watanabe ,  Shinichi Kawato ,  Mitsuhiro Matsumoto

IPC分类号： H01S5/00

CPC分类号： H01S5/2231 ,  B82Y20/00 ,  H01S5/028 ,  H01S5/0287 ,  H01S5/0425 ,  H01S5/1014 ,  H01S5/1039 ,  H01S5/162 ,  H01S5/168 ,  H01S5/2022 ,  H01S5/2214 ,  H01S5/2219 ,  H01S5/3211 ,  H01S5/34326 ,  H01S5/3436 ,  H01S2301/18

摘要： In a semiconductor laser device of the invention, a ridge portion 150 forms a waveguide, and guided light goes along the ridge portion 150. A tail of the guided layer is present also at first side portions 151, while second side portions 152 are regions which the tail of the guided light does not reach. Meanwhile, scattered light generated from the ridge portion 150 goes through the first side portions 15, spreading into the second side portions 152. In the second side portions 152, a light absorption layer 127 serving as a light absorber is formed on the first upper clad layer 108, where the scattered light is absorbed. As a result of the absorption of scattered light in the second side portions 152, ripples of radiation light are reduced. Also since the light absorption layer 127 is in electrical contact with a p-side ohmic electrode 125, the problem of charge accumulation to the light absorption layer 127 can be avoided.

摘要翻译： 在本发明的半导体激光装置中，脊部150形成波导，导向光沿着脊部150。 引导层的尾部还存在于第一侧部151处，而第二侧部152是导光的尾部未到达的区域。 同时，从脊部150产生的散射光穿过第一侧部15，扩展到第二侧部152。 在第二侧部152中，在吸收散射光的第一上覆盖层108上形成有作为光吸收体的光吸收层127。 作为第二侧部152中散射光的吸收的结果，辐射光的波纹减小。 此外，由于光吸收层127与p侧欧姆电极125电接触，因此可以避免对光吸收层127的电荷积聚的问题。

公开(公告)号：US09580791B2

公开(公告)日：2017-02-28

申请号：US13697164

申请日：2011-04-26

申请人： Satoshi Inoue ,  Shinichi Kawato ,  Nobuhiro Hayashi ,  Tohru Sonoda

发明人： Satoshi Inoue ,  Shinichi Kawato ,  Nobuhiro Hayashi ,  Tohru Sonoda

IPC分类号： C23C16/04 ,  H05B33/10 ,  C23C14/04 ,  B05C21/00 ,  H01L51/00 ,  H01L51/50

CPC分类号： C23C14/042 ,  B05C21/005 ,  H01L51/0011 ,  H01L51/50

摘要： A vapor deposition mask (70) includes a first layer (71), a second layer (72) and a third layer (73) in this order. A plurality of first openings (71h), a plurality of second openings (72h) and a plurality of third openings (73h) are formed respectively in the first layer, the second layer and the third layer. The first openings, the second openings and the third openings communicate with each other, thereby constituting mask openings (75). The opening dimension of the second openings is larger than the opening dimension of the first openings and is larger than the opening dimension of the third openings. With this configuration, it is possible to prevent reduction of the opening dimension of the mask openings or clogging of the mask openings due to the vapor deposition particles adhering to the mask openings.

摘要翻译： 蒸镀掩模（70）依次包括第一层（71），第二层（72）和第三层（73）。 多个第一开口（71h），多个第二开口（72h）和多个第三开口（73h）分别形成在第一层，第二层和第三层中。 第一开口，第二开口和第三开口彼此连通，从而构成掩模开口（75）。 第二开口的开口尺寸大于第一开口的开口尺寸，并且大于第三开口的开口尺寸。 利用这种构造，可以防止由于气相沉积颗粒粘附到掩模开口而导致的掩模开口的开口尺寸的减小或掩模开口的堵塞。

公开(公告)号：US09391275B2

公开(公告)日：2016-07-12

申请号：US13703873

申请日：2011-08-17

申请人： Tohru Sonoda ,  Nobuhiro Hayashi ,  Shinichi Kawato ,  Satoshi Inoue

发明人： Tohru Sonoda ,  Nobuhiro Hayashi ,  Shinichi Kawato ,  Satoshi Inoue

IPC分类号： C23C16/00 ,  H01L51/00 ,  C23C14/04 ,  H01L27/32 ,  H01L51/56

CPC分类号： H01L51/0008 ,  C23C14/042 ,  H01L27/3211 ,  H01L27/3244 ,  H01L51/0011 ,  H01L51/56

摘要： A vapor deposition source (60), a plurality of control plates (80) and a vapor deposition mask (70) are disposed in this order. A substrate (10) is moved relative to the vapor deposition mask in a state in which the substrate and the vapor deposition mask are spaced apart at a fixed interval. Vapor deposition particles (91) discharged from a vapor deposition source opening (61) of the vapor deposition source pass through neighboring inter-control plate spaces (81) and mask openings (71) formed in the vapor deposition mask, and then adhere to the substrate to form a coating film (90). At least a part of the coating film is formed by the vapor deposition particles that have passed through two or more different inter-control plate spaces. It is thereby possible to form a coating film in which edge blur and variations in the thickness are suppressed.

摘要翻译： 蒸镀源（60），多个控制板（80）和蒸镀掩模（70）依次配置。 在基板和气相沉积掩模以固定间隔间隔开的状态下，基板（10）相对于气相沉积掩模移动。 从气相沉积源的气相沉积源开口（61）排出的气相沉积颗粒（91）通过相邻的控制板间隙（81）和形成在气相沉积掩模中的掩模开口（71），然后粘附到 基板以形成涂膜（90）。 涂膜的至少一部分由已经通过两个或更多个不同的控制间隙的气相沉积颗粒形成。 由此，可以形成抑制边缘模糊和厚度变化的涂膜。

公开(公告)号：US09246101B2

公开(公告)日：2016-01-26

申请号：US13583611

申请日：2010-10-29

申请人： Tohru Sonoda ,  Nobuhiro Hayashi ,  Shinichi Kawato

发明人： Tohru Sonoda ,  Nobuhiro Hayashi ,  Shinichi Kawato

IPC分类号： H01L21/00 ,  B05C13/02 ,  B05C21/00 ,  B05C11/11 ,  H01L51/00 ,  C23C14/04 ,  C23C14/24 ,  H01L27/32 ,  H01L51/56

CPC分类号： H01L51/0011 ,  C23C14/042 ,  C23C14/24 ,  H01L27/3211 ,  H01L51/56

摘要： A deposition mask is used to pattern a thin film 3 on a substrate 10 by depositing deposition particles through a plurality of openings K having a stripe pattern. The deposition mask includes a frame 65; a plurality of mask layers 70 provided in the frame so as to overlap each other; and a support layer 71 provided between the mask layers 70. Each of the mask layers 70 is formed by arranging a plurality of mask wires 72 in a stripe pattern in a tensioned state, and the support layer 71 is formed by arranging a plurality of support wires 74 in a tensioned state so as to cross the mask wires 72. A plurality of gaps 73 in each of the plurality of mask layers 70 overlap each other to form a plurality of through gaps 73a that linearly extend through all of the plurality of mask layers 70. The openings K are formed by the through gaps 73a.

摘要翻译： 沉积掩模用于通过沉积具有条纹图案的多个开口K沉积沉积颗粒来在基板10上图案化薄膜3。 沉积掩模包括框架65; 设置在所述框架中以使得彼此重叠的多个掩模层70; 以及设置在掩模层70之间的支撑层71.每个掩模层70通过以张紧状态布置条纹图案中的多个掩模布线72而形成，并且支撑层71通过布置多个支撑件 电线74处于张紧状态，以便穿过掩模线72.多个掩模层70中的每一个中的多个间隙73彼此重叠以形成多个直线延伸穿过所有多个掩模的通孔73a 开口K由通孔73a形成。

公开(公告)号：US08845808B2

公开(公告)日：2014-09-30

申请号：US13997173

申请日：2011-12-19

申请人： Tohru Sonoda ,  Shinichi Kawato ,  Satoshi Inoue ,  Satoshi Hashimoto

发明人： Tohru Sonoda ,  Shinichi Kawato ,  Satoshi Inoue ,  Satoshi Hashimoto

IPC分类号： C23C14/26 ,  C23C16/448 ,  H05B33/10 ,  C23C14/24 ,  H01L21/02 ,  H01L51/00 ,  H01L51/56

CPC分类号： C23C16/45578 ,  C23C14/24 ,  C23C14/243 ,  H01L21/02263 ,  H01L51/001 ,  H01L51/56 ,  H05B33/10

摘要： A vapor deposition device (50) in accordance with the present invention is a vapor deposition device for forming a film on a film formation substrate (60), the vapor deposition device including a vapor deposition source (80) that has an injection hole (81) from which vapor deposition particles are injected, a vapor deposition particle crucible (82) for supplying the vapor deposition particles to the vapor deposition source (80), and a rotation motor (86) for changing a distribution of the injection amount of the vapor deposition particles by rotating the vapor deposition source (80).

摘要翻译： 根据本发明的蒸镀装置（50）是在成膜基板（60）上形成膜的蒸镀装置，其特征在于，所述蒸镀装置具有：蒸镀源（80），具有喷射孔 ），用于将气相沉积粒子供给到气相沉积源（80）的气相沉积粒子坩埚（82）和用于改变蒸汽喷射量分布的旋转马达（86） 通过旋转气相沉积源（80）来沉积颗粒。

公开(公告)号：US08673082B2

公开(公告)日：2014-03-18

申请号：US13980875

申请日：2012-01-13

申请人： Satoshi Inoue ,  Shinichi Kawato ,  Tohru Sonoda

发明人： Satoshi Inoue ,  Shinichi Kawato ,  Tohru Sonoda

IPC分类号： C23C16/00

CPC分类号： C23C16/448 ,  C23C14/243 ,  C23C16/042 ,  G03B37/06 ,  H01L51/0008

摘要： A crucible (50) of the present invention includes: an opening (55a) from which vapor deposition particles are injected toward a film formation substrate on which a film is to be formed; a focal point member (54a), provided so as to face the opening (55a), which reflects vapor deposition particles injected from the opening (55a); and a revolution paraboloid (55b) which reflects, toward the film formation substrate, vapor deposition particles which have been reflected by the focal point member (54a).

摘要翻译： 本发明的坩埚（50）包括：朝向要在其上形成膜的成膜基板上注入蒸镀颗粒的开口（55a） 设置成面对开口（55a）的焦点部件（54a），其反射从开口（55a）喷射的气相沉积粒子; 以及向所述成膜基板反射已被所述焦点部件（54a）反射的气相沉积粒子的旋转抛物面（55b）。

公开(公告)号：US20140014036A1

公开(公告)日：2014-01-16

申请号：US14007956

申请日：2012-03-23

申请人： Tohru Sonoda ,  Shinichi Kawato ,  Satoshi Inoue ,  Satoshi Hashimoto

发明人： Tohru Sonoda ,  Shinichi Kawato ,  Satoshi Inoue ,  Satoshi Hashimoto

IPC分类号： H01L21/02 ,  B65D85/00

摘要： A vapor deposition particle emitting device of the present invention includes: a nozzle section (110) having emission holes (111) from which gaseous vapor deposition particles are emitted out; a heating plate unit (100), provided in the nozzle section (110), which is made up of heating plates (101) each having a surface on which a vapor deposition material remains as a result of adherence of vapor deposition particles to the surface; and a heating device (160) for heating the vapor deposition material, which is thus remaining on the surface of each of the heating plates (101), so that a temperature of the vapor deposition material is not less than a temperature at which to become transformed into gaseous form.

摘要翻译： 本发明的气相沉积粒子发射装置包括：喷嘴部分（110），其具有从其中排出气态气相沉积颗粒的发射孔（111）; 设置在所述喷嘴部分（110）中的加热板单元（100），所述加热板单元由加热板（101）组成，所述加热板具有由于气相沉积颗粒粘附到所述表面而具有气相沉积材料的表面的表面 ; 以及用于加热蒸镀材料的加热装置（160），其被保持在每个加热板（101）的表面上，使得蒸镀材料的温度不低于成为 转化成气态。