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公开(公告)号：US20080237808A1
公开(公告)日：2008-10-02
申请号：US12134861
申请日：2008-06-06
申请人： Hirotoshi Kubo , Yukari Shirahata , Shigehito Matsumoto , Masamichi Yamamuro , Koujiro Kameyama , Mitsuo Umemoto
发明人： Hirotoshi Kubo , Yukari Shirahata , Shigehito Matsumoto , Masamichi Yamamuro , Koujiro Kameyama , Mitsuo Umemoto
IPC分类号： H01L23/538 , H05K1/18
CPC分类号： H01L29/7322 , H01L23/3128 , H01L23/481 , H01L23/4824 , H01L23/4951 , H01L23/49562 , H01L24/05 , H01L24/06 , H01L24/17 , H01L24/29 , H01L24/48 , H01L24/73 , H01L24/91 , H01L29/1004 , H01L29/41708 , H01L29/66272 , H01L2224/0401 , H01L2224/04042 , H01L2224/05556 , H01L2224/05624 , H01L2224/05647 , H01L2224/05684 , H01L2224/13099 , H01L2224/32225 , H01L2224/32245 , H01L2224/451 , H01L2224/48091 , H01L2224/48227 , H01L2224/48247 , H01L2224/48257 , H01L2224/48465 , H01L2224/73265 , H01L2924/00014 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01022 , H01L2924/01029 , H01L2924/01033 , H01L2924/0105 , H01L2924/01073 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/04953 , H01L2924/0781 , H01L2924/12033 , H01L2924/12036 , H01L2924/12041 , H01L2924/1305 , H01L2924/1306 , H01L2924/13091 , H01L2924/15311 , H01L2924/15787 , H01L2924/181 , H01L2924/30107 , H01L2924/3011 , H01L2924/351 , H01L2924/00012 , H01L2924/00 , H01L2224/45099
摘要： Disclosed is a semiconductor device in which emitter pad electrodes connected to an active region, collector and base pad electrodes are formed on a surface of a semiconductor substrate. Furthermore, on a back surface of the semiconductor substrate, a backside electrode is formed. Moreover, the emitter pad electrodes connected to a grounding potential are connected to the backside electrode through feedthrough electrodes penetrating the semiconductor substrate in a thickness direction.
摘要翻译： 公开了一种半导体器件，其中连接到有源区，集电极和基极焊盘电极的发射极焊盘电极形成在半导体衬底的表面上。 此外，在半导体衬底的背面形成有背面电极。 此外，连接到接地电位的发射极焊盘电极通过穿过半导体衬底的厚度方向的穿通电极而连接到背面电极。
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公开(公告)号：US20060220178A1
公开(公告)日：2006-10-05
申请号：US11392802
申请日：2006-03-28
申请人： Hirotoshi Kubo , Yukari Shirahata , Shigehito Matsumoto , Masamichi Yamamuro , Koujiro Kameyama , Mitsuo Umemoto
发明人： Hirotoshi Kubo , Yukari Shirahata , Shigehito Matsumoto , Masamichi Yamamuro , Koujiro Kameyama , Mitsuo Umemoto
IPC分类号： H01L29/00
CPC分类号： H01L29/7322 , H01L23/3128 , H01L23/481 , H01L23/4824 , H01L23/4951 , H01L23/49562 , H01L24/05 , H01L24/06 , H01L24/17 , H01L24/29 , H01L24/48 , H01L24/73 , H01L24/91 , H01L29/1004 , H01L29/41708 , H01L29/66272 , H01L2224/0401 , H01L2224/04042 , H01L2224/05556 , H01L2224/05624 , H01L2224/05647 , H01L2224/05684 , H01L2224/13099 , H01L2224/32225 , H01L2224/32245 , H01L2224/451 , H01L2224/48091 , H01L2224/48227 , H01L2224/48247 , H01L2224/48257 , H01L2224/48465 , H01L2224/73265 , H01L2924/00014 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01022 , H01L2924/01029 , H01L2924/01033 , H01L2924/0105 , H01L2924/01073 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/04953 , H01L2924/0781 , H01L2924/12033 , H01L2924/12036 , H01L2924/12041 , H01L2924/1305 , H01L2924/1306 , H01L2924/13091 , H01L2924/15311 , H01L2924/15787 , H01L2924/181 , H01L2924/30107 , H01L2924/3011 , H01L2924/351 , H01L2924/00012 , H01L2924/00 , H01L2224/45099
摘要： Disclosed is a semiconductor device in which emitter pad electrodes connected to an active region, collector and base pad electrodes are formed on a surface of a semiconductor substrate. Furthermore, on a back surface of the semiconductor substrate, a backside electrode is formed. Moreover, the emitter pad electrodes connected to a grounding potential are connected to the backside electrode through feedthrough electrodes penetrating the semiconductor substrate in a thickness direction.
摘要翻译： 公开了一种半导体器件，其中连接到有源区，集电极和基极焊盘电极的发射极焊盘电极形成在半导体衬底的表面上。 此外，在半导体衬底的背面形成有背面电极。 此外，连接到接地电位的发射极焊盘电极通过穿过半导体衬底的厚度方向的穿通电极而连接到背面电极。
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公开(公告)号：US08076755B2
公开(公告)日：2011-12-13
申请号：US12134861
申请日：2008-06-06
申请人： Mitsuo Umemoto , Shigehito Matsumoto , Hirotoshi Kubo , Yukari Shirahata , Masamichi Yamamuro , Koujiro Kameyama
发明人： Mitsuo Umemoto , Shigehito Matsumoto , Hirotoshi Kubo , Yukari Shirahata , Masamichi Yamamuro , Koujiro Kameyama
IPC分类号： H01L29/66
CPC分类号： H01L29/7322 , H01L23/3128 , H01L23/481 , H01L23/4824 , H01L23/4951 , H01L23/49562 , H01L24/05 , H01L24/06 , H01L24/17 , H01L24/29 , H01L24/48 , H01L24/73 , H01L24/91 , H01L29/1004 , H01L29/41708 , H01L29/66272 , H01L2224/0401 , H01L2224/04042 , H01L2224/05556 , H01L2224/05624 , H01L2224/05647 , H01L2224/05684 , H01L2224/13099 , H01L2224/32225 , H01L2224/32245 , H01L2224/451 , H01L2224/48091 , H01L2224/48227 , H01L2224/48247 , H01L2224/48257 , H01L2224/48465 , H01L2224/73265 , H01L2924/00014 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01022 , H01L2924/01029 , H01L2924/01033 , H01L2924/0105 , H01L2924/01073 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/04953 , H01L2924/0781 , H01L2924/12033 , H01L2924/12036 , H01L2924/12041 , H01L2924/1305 , H01L2924/1306 , H01L2924/13091 , H01L2924/15311 , H01L2924/15787 , H01L2924/181 , H01L2924/30107 , H01L2924/3011 , H01L2924/351 , H01L2924/00012 , H01L2924/00 , H01L2224/45099
摘要： Disclosed is a semiconductor device in which emitter pad electrodes connected to an active region, collector and base pad electrodes are formed on a surface of a semiconductor substrate. Furthermore, on a back surface of the semiconductor substrate, a backside electrode is formed. Moreover, the emitter pad electrodes connected to a grounding potential are connected to the backside electrode through feedthrough electrodes penetrating the semiconductor substrate in a thickness direction.
摘要翻译： 公开了一种半导体器件，其中连接到有源区，集电极和基极焊盘电极的发射极焊盘电极形成在半导体衬底的表面上。 此外，在半导体衬底的背面形成有背面电极。 此外，连接到接地电位的发射极焊盘电极通过穿过半导体衬底的厚度方向的穿通电极而连接到背面电极。
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公开(公告)号：US07397128B2
公开(公告)日：2008-07-08
申请号：US11392802
申请日：2006-03-28
申请人： Hirotoshi Kubo , Yukari Shirahata , Shigehito Matsumoto , Masamichi Yamamuro , Koujiro Kameyama , Mitsuo Umemoto
发明人： Hirotoshi Kubo , Yukari Shirahata , Shigehito Matsumoto , Masamichi Yamamuro , Koujiro Kameyama , Mitsuo Umemoto
IPC分类号： H01L23/48
CPC分类号： H01L29/7322 , H01L23/3128 , H01L23/481 , H01L23/4824 , H01L23/4951 , H01L23/49562 , H01L24/05 , H01L24/06 , H01L24/17 , H01L24/29 , H01L24/48 , H01L24/73 , H01L24/91 , H01L29/1004 , H01L29/41708 , H01L29/66272 , H01L2224/0401 , H01L2224/04042 , H01L2224/05556 , H01L2224/05624 , H01L2224/05647 , H01L2224/05684 , H01L2224/13099 , H01L2224/32225 , H01L2224/32245 , H01L2224/451 , H01L2224/48091 , H01L2224/48227 , H01L2224/48247 , H01L2224/48257 , H01L2224/48465 , H01L2224/73265 , H01L2924/00014 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01022 , H01L2924/01029 , H01L2924/01033 , H01L2924/0105 , H01L2924/01073 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/04953 , H01L2924/0781 , H01L2924/12033 , H01L2924/12036 , H01L2924/12041 , H01L2924/1305 , H01L2924/1306 , H01L2924/13091 , H01L2924/15311 , H01L2924/15787 , H01L2924/181 , H01L2924/30107 , H01L2924/3011 , H01L2924/351 , H01L2924/00012 , H01L2924/00 , H01L2224/45099
摘要： Disclosed is a semiconductor device in which emitter pad electrodes connected to an active region, collector and base pad electrodes are formed on a surface of a semiconductor substrate. Furthermore, on a back surface of the semiconductor substrate, a backside electrode is formed. Moreover, the emitter pad electrodes connected to a grounding potential are connected to the backside electrode through feedthrough electrodes penetrating the semiconductor substrate in a thickness direction.
摘要翻译： 公开了一种半导体器件，其中连接到有源区，集电极和基极焊盘电极的发射极焊盘电极形成在半导体衬底的表面上。 此外，在半导体衬底的背面形成有背面电极。 此外，连接到接地电位的发射极焊盘电极通过穿过半导体衬底的厚度方向的穿通电极而连接到背面电极。
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