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    Semiconductor device and manufacturing method thereof
    5.
    发明申请
    Semiconductor device and manufacturing method thereof 审中-公开
    半导体装置及其制造方法

    公开(公告)号：US20050167785A1

    公开(公告)日：2005-08-04

    申请号：US11024225

    申请日：2004-12-29

    申请人： Hisaaki Tominaga ,  Keita Odajima ,  Shigehito Matsumoto ,  Masamichi Yamamuro

    发明人： Hisaaki Tominaga ,  Keita Odajima ,  Shigehito Matsumoto ,  Masamichi Yamamuro

    IPC分类号： H01L29/72 ,  H01L21/331 ,  H01L29/08 ,  H01L29/732 ,  H01L29/00

    CPC分类号： H01L29/66287 ,  H01L29/0821 ,  H01L29/7322

    摘要： In a bipolar transistor, an SIC layer is provided right under a genuine base region in order to suppress the Kirk effect and improve fT characteristic by thinning the film of the genuine base region. The higher the concentration of impurities in the SIC layer, the bigger the effect. When the impurity concentration of the SIC layer is high, the VCEO deteriorates so that the fT characteristic improvement and the Kirk effect suppression are in a trade off relationship with the VCEO. A second SIC layer is provided right under the genuine base region and in contact therewith, and a first SIC layer with a higher impurity concentration than the second SIC layer is formed right under the second SIC layer. The first SIC layer narrows the collector width and suppresses the Kirk effect whereas, the second SIC layer makes it possible to improve fT characteristic by cutting a lower edge of the genuine base region. Two SIC layers having varying depths can be formed in one heat treatment by using in the first SIC layer impurities that have a larger diffusion coefficient than the impurities of the second SIC layer.

    摘要翻译： 在双极晶体管中，SIC层设置在真正的基极区域的正下方，以抑制Kirk效应，并且通过使真正的基极区域的膜变薄来提高fT特性。 SIC层杂质浓度越高，效果越好。 当SIC层的杂质浓度高时，VCEO劣化，使得fT特性改善和Kirk效应抑制与VCEO有折衷关系。 第二SIC层设置在真正的基底区域正下方并与之接触，并且在第二SIC层的正下方形成具有比第二SIC层更高的杂质浓度的第一SIC层。 第一个SIC层缩小了收集器的宽度并抑制了柯克效应，而第二个SIC层可以通过切割真正的基底区域的下边缘来提高fT特性。 通过在第一SIC层中使用具有比第二SIC层的杂质更大的扩散系数的杂质，可以在一个热处理中形成具有不同深度的两个SIC层。