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    X-ray pixels including double photoconductors and X-ray detectors including the X-ray pixels
    2.
    发明授权
    X-ray pixels including double photoconductors and X-ray detectors including the X-ray pixels 有权
    包括双光电导体的X射线像素和包括X射线像素的X射线检测器

    公开(公告)号：US09348037B2

    公开(公告)日：2016-05-24

    申请号：US12923553

    申请日：2010-09-28

    申请人： Sang-wook Kim ,  Jae-chul Park ,  Sun-il Kim ,  Chang-jung Kim

    发明人： Sang-wook Kim ,  Jae-chul Park ,  Sun-il Kim ,  Chang-jung Kim

    IPC分类号： H01L31/08 ,  G01T1/24

    CPC分类号： G01T1/242 ,  H01L31/085

    摘要： Example embodiments are directed to X-ray detectors including double photoconductors. According to example embodiments, the X-ray detector includes a first photoconductor on which X-rays are incident, and a second photoconductor on which X-rays transmitted through the first photoconductor are incident. The first photoconductor and the second photoconductor include a tandem structure. The first photoconductor is formed of silicon and absorbs X-rays in a low energy band, and the second photoconductor is formed of a material that absorbs X-rays in an energy band higher than the low energy band of the X-rays absorbed by silicon.

    摘要翻译： 示例性实施例涉及包括双光电导体的X射线检测器。 根据示例性实施例，X射线检测器包括在其上入射X射线的第一感光体和通过第一光电导体透射X射线的第二感光体。 第一光电导体和第二光电导体包括串联结构。 第一光电导体由硅形成并在低能带中吸收X射线，第二光电导体由吸收X射线的能量带的材料形成，该能带高于由硅吸收的X射线的低能带 。

    Large-scale X-ray detectors and methods of manufacturing the same
    3.
    发明授权
    Large-scale X-ray detectors and methods of manufacturing the same 有权
    大型X射线探测器及其制造方法

    公开(公告)号：US08847168B2

    公开(公告)日：2014-09-30

    申请号：US12929203

    申请日：2011-01-07

    申请人： Sun-il Kim ,  Jae-chul Park ,  Sang-wook Kim ,  Chang-jung Kim

    发明人： Sun-il Kim ,  Jae-chul Park ,  Sang-wook Kim ,  Chang-jung Kim

    IPC分类号： G01T1/24 ,  H01L31/08 ,  H01L27/146

    CPC分类号： G01T1/24 ,  H01L24/24 ,  H01L24/73 ,  H01L27/14609 ,  H01L27/14618 ,  H01L27/14634 ,  H01L27/14636 ,  H01L27/14676 ,  H01L27/14687 ,  H01L31/085 ,  H01L2224/16225 ,  H01L2924/12043 ,  H01L2924/14 ,  H01L2924/15788 ,  H01L2924/00

    摘要： Large-scale X-ray detectors and methods of manufacturing the same are provided, the large-scale X-ray detectors include a photoconductor layer configured to generate electrical charges according to an incident X-ray using an entire area of the photoconductor layer, a common electrode on an upper surface of the photoconductor layer, a plurality of pixel electrodes, configured to convert the electrical charges into electrical signals, on a lower surface of the photoconductor layer and divided into a plurality of groups, and a plurality of application-specific integrated circuits (ASICs) each corresponding to one of the groups. Each ASIC is configured to process the electrical signals conveyed via the pixel electrodes in the corresponding group. The ASICs process the electrical signals so that seamless image information is collectively generated by the ASICs with respect to the entire area of the photoconductor layer.

    摘要翻译： 提供了大规模X射线检测器及其制造方法，大规模X射线检测器包括：光电导体层，被配置为根据入射的X射线使用光电导体层的整个面积产生电荷; 所述光电导体层的上表面上的公共电极，被配置为将所述电荷转换为电信号的多个像素电极，在所述感光体层的下表面上并分成多个组，以及多个应用特定 集成电路（ASIC），每个对应于该组中的一个。 每个ASIC被配置为处理通过相应组中的像素电极传送的电信号。 ASIC处理电信号，使得ASIC相对于感光体层的整个区域共同地产生无缝图像信息。

    Display apparatuses and methods of operating the same
    4.
    发明授权
    Display apparatuses and methods of operating the same 有权
    显示装置及其操作方法

    公开(公告)号：US08610652B2

    公开(公告)日：2013-12-17

    申请号：US12458312

    申请日：2009-07-08

    申请人： Sung-hoon Lee ,  Do-hyun Kim ,  Sang-wook Kim ,  Chang-jung Kim

    发明人： Sung-hoon Lee ,  Do-hyun Kim ,  Sang-wook Kim ,  Chang-jung Kim

    IPC分类号： G09G3/36

    CPC分类号： G02F1/1368 ,  G09G3/3648 ,  G09G2330/027

    摘要： Provided are display apparatuses and methods of operating the same. In a display apparatus, a display image may be continuously held for longer than about 10 msec after the power of the display panel is turned off. The display apparatus may indicate a liquid crystal display (LCD) apparatus including an oxide thin film transistor (TFT). Off leakage current of the oxide TFT may be less than about 10−14 A.

    摘要翻译： 提供了显示装置及其操作方法。 在显示装置中，在显示面板的电源关闭之后，显示图像可以连续保持超过约10毫秒。 显示装置可以指示包括氧化物薄膜晶体管（TFT）的液晶显示器（LCD）装置。 氧化物TFT的漏电流可以小于约10-14A。

    METHOD AND APPARATUS FOR ENCODING/DECODING AUDIO DATA WITH SCALABILITY
    8.
    发明申请
    METHOD AND APPARATUS FOR ENCODING/DECODING AUDIO DATA WITH SCALABILITY 审中-公开
    用于编码/解码具有可扩展性的音频数据的方法和装置

    公开(公告)号：US20120101825A1

    公开(公告)日：2012-04-26

    申请号：US13280030

    申请日：2011-10-24

    申请人： Jung-hoe KIM ,  Sang-wook Kim ,  Eun-mi Oh

    发明人： Jung-hoe KIM ,  Sang-wook Kim ,  Eun-mi Oh

    IPC分类号： G10L19/00

    CPC分类号： G10L19/24

    摘要： Method and apparatus for encoding/decoding audio data with scalability are provided. The method includes slicing audio data to correspond to a plurality of layers, obtaining scale band information and coding band information corresponding to each of the plurality of layers, coding additional information containing scale factor information and coding model information based on scale band information and coding band information corresponding to a first layer, obtaining quantized samples by quantizing audio data corresponding to the first layer with reference to the scale factor information, coding the obtained plurality of quantized samples in units of symbols in order from respective symbols formed with most significant bits (MSB) to least significant bits (LSB) based on the coding model information, and repeating, until coding for the plurality of layers is finished. Accordingly, fine grain scalability can be provided with lower complexity and better audio quality even in a lower layer.

    摘要翻译： 提供了用于以可扩展性对音频数据进行编码/解码的方法和装置。 该方法包括对音频数据进行切片以对应于多个层，获取与多个层中的每一层相对应的尺度带信息和编码频带信息，根据比例因子信息编码附加信息和基于尺度带信息和编码频带编码模型信息 对应于第一层的信息，通过参照比例因子信息量化对应于第一层的音频数据来获得量化样本，以从符号形式开始的各个符号按顺序对所获得的多个量化样本进行编码（MSB ）到基于编码模型信息的最低有效位（LSB），并且直到完成多层的编码为止。 因此，即使在较低的层中，也可以提供更低的复杂度和更好的音频质量的细粒度可扩展性。

    Transistors, methods of manufacturing a transistor, and electronic devices including a transistor
    9.
    发明申请
    Transistors, methods of manufacturing a transistor, and electronic devices including a transistor 有权
    晶体管，制造晶体管的方法以及包括晶体管的电子器件

    公开(公告)号：US20110175080A1

    公开(公告)日：2011-07-21

    申请号：US12805648

    申请日：2010-08-11

    申请人： Sun-il Kim ,  Jae-chul Park ,  Sang-wook Kim ,  Young-soo Park ,  Chang-jung Kim

    发明人： Sun-il Kim ,  Jae-chul Park ,  Sang-wook Kim ,  Young-soo Park ,  Chang-jung Kim

    IPC分类号： H01L29/12 ,  H01L29/78 ,  H01L21/16

    CPC分类号： H01L29/7869 ,  H01L27/1225 ,  H01L27/1248 ,  H01L29/66969 ,  H01L29/78606

    摘要： Transistors, methods of manufacturing a transistor, and electronic devices including a transistor are provided, the transistor includes a channel layer, a source and a drain respectively contacting opposing ends of the channel layer, a gate corresponding to the channel layer, a gate insulating layer between the channel layer and the gate, and a first passivation layer and a second passivation layer sequentially disposed on the gate insulating layer. The first passivation layer covers the source, the drain, the gate, the gate insulating layer and the channel layer. The second passivation layer includes fluorine (F).

    摘要翻译： 提供晶体管，制造晶体管的方法和包括晶体管的电子器件，晶体管包括沟道层，分别接触沟道层的相对端的源极和漏极，对应于沟道层的栅极，栅极绝缘层 在沟道层和栅极之间，以及顺序地设置在栅极绝缘层上的第一钝化层和第二钝化层。 第一钝化层覆盖源极，漏极，栅极，栅极绝缘层和沟道层。 第二钝化层包括氟（F）。