公开(公告)号：US20120080660A1

公开(公告)日：2012-04-05

申请号：US13325225

申请日：2011-12-14

申请人： Myung Hoon JUNG ,  Hyun chul Lim ,  Sul Hee Kim ,  Rak Jun Choi

发明人： Myung Hoon JUNG ,  Hyun chul Lim ,  Sul Hee Kim ,  Rak Jun Choi

IPC分类号： H01L33/04 ,  H01L33/62

CPC分类号： H01L33/20 ,  F21K9/23 ,  F21Y2115/10 ,  H01L21/0237 ,  H01L21/0243 ,  H01L21/02458 ,  H01L21/02505 ,  H01L21/02521 ,  H01L21/0254 ,  H01L21/02639 ,  H01L21/02647 ,  H01L33/007 ,  H01L33/02 ,  H01L33/025 ,  H01L33/06 ,  H01L33/10 ,  H01L33/16 ,  H01L33/22 ,  H01L33/24 ,  H01L33/44 ,  H01L33/46 ,  H01L33/62 ,  H01L2224/48091 ,  H01L2924/10158 ,  H01L2924/00014

摘要： A light emitting diode is disclosed. The disclosed light emitting diode includes a light emitting structure including a first-conductivity-type semiconductor layer, an active layer, and a second-conductivity-type semiconductor layer. The first-conductivity-type semiconductor layer, active layer, and second-conductivity-type semiconductor layer are disposed to be adjacent to one another in a same direction. The active layer includes well and barrier layers alternately stacked at least one time. The well layer has a narrower energy bandgap than the barrier layer. The light emitting diode also includes a mask layer disposed in the first-conductivity-type semiconductor layer, a first electrode disposed on the first-conductivity-type semiconductor layer, and a second electrode disposed on the second-conductivity-type semiconductor layer. The first-conductivity-type semiconductor layer is formed with at least one recess portion.

摘要翻译： 公开了一种发光二极管。 所公开的发光二极管包括包括第一导电型半导体层，有源层和第二导电型半导体层的发光结构。 第一导电型半导体层，有源层和第二导电型半导体层被设置成沿相同的方向彼此相邻。 活性层包括至少一次交替层叠的阱和势垒层。 阱层具有比阻挡层更窄的能带隙。 发光二极管还包括设置在第一导电型半导体层中的掩模层，设置在第一导电型半导体层上的第一电极和设置在第二导电型半导体层上的第二电极。 第一导电型半导体层形成有至少一个凹部。

公开(公告)号：US20110186882A1

公开(公告)日：2011-08-04

申请号：US12948423

申请日：2010-11-17

申请人： Dae Sung KANG ,  Myung Hoon JUNG

发明人： Dae Sung KANG ,  Myung Hoon JUNG

IPC分类号： H01L33/26 ,  H01L33/60

CPC分类号： H01L33/10 ,  H01L2224/48091 ,  H01L2933/0083 ,  H01L2924/00014

摘要： Provided are a light emitting device, a method of manufacturing the light emitting device, a light emitting device package, and a lighting system. The light emitting device includes a reflective layer including a first GaN-based semiconductor layer having a first refractive index, a second GaN-based semiconductor layer having a second refractive index less than the first refractive index, and a third GaN-based semiconductor layer having a third refractive index less than the second refractive index and a light emitting structure layer including a first conductive type semiconductor layer, a second conductive type semiconductor layer, and an active layer disposed between the first conductive type semiconductor layer and the second conductive type semiconductor layer on the reflective layer.

摘要翻译： 提供了发光器件，制造发光器件的方法，发光器件封装和照明系统。 发光器件包括：反射层，包括具有第一折射率的第一GaN基半导体层，具有小于第一折射率的第二折射率的第二GaN基半导体层;以及第三GaN基半导体层，其具有 第三折射率小于第二折射率的发光结构层和包括第一导电类型半导体层，第二导电类型半导体层和设置在第一导电类型半导体层和第二导电类型半导体层之间的有源层的发光结构层 在反射层上。

公开(公告)号：US20110229999A1

公开(公告)日：2011-09-22

申请号：US13050201

申请日：2011-03-17

申请人： Kyung Wook PARK ,  Myung Hoon JUNG

发明人： Kyung Wook PARK ,  Myung Hoon JUNG

IPC分类号： H01L33/32

CPC分类号： H01L33/0079 ,  H01L33/025 ,  H01L33/32 ,  H01L33/405 ,  H01L33/44 ,  H01L2924/0002 ,  H01L2924/00

摘要： Provided is a method for fabricating a light emitting device. The method for fabricating the light emitting device includes forming a buffer layer including a compound semiconductor in which a rare-earth element is doped on a substrate, forming a light emitting structure including a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer, which are successively stacked on the buffer layer, forming a first electrode layer on the light emitting structure, removing the substrate, and forming a second electrode layer under the light emitting structure.

摘要翻译： 提供一种制造发光器件的方法。 制造发光器件的方法包括：形成包括掺杂有稀土元素的化合物半导体的缓冲层，形成包括第一导电类型半导体层，有源层和第二导电类型的发光结构 导电型半导体层，其依次层叠在缓冲层上，在发光结构上形成第一电极层，去除衬底，并在发光结构的下方形成第二电极层。

公开(公告)号：US20140110720A1

公开(公告)日：2014-04-24

申请号：US14057193

申请日：2013-10-18

申请人： Eun Sil CHOI ,  Jeong Tak OH ,  Myung Hoon JUNG ,  Ki Young SONG

发明人： Eun Sil CHOI ,  Jeong Tak OH ,  Myung Hoon JUNG ,  Ki Young SONG

IPC分类号： H01L33/32

CPC分类号： H01L33/325 ,  H01L33/06 ,  H01L33/32 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2924/00014

摘要： A light emitting device includes a first semiconductor layer having a first conductive dopant, an active layer on the first semiconductor layer, an electron blocking layer on the active layer, a carrier injection layer between the active layer and the electron blocking layer, and a second semiconductor layer having a second conductive dopant on the electron blocking layer. The carrier injection layer includes the first conductive dopant and the second conductive dopant, and the first conductive dopant of the carrier injection layer has a concentration lower than a concentration of the second conductive dopant.

摘要翻译： 发光器件包括具有第一导电掺杂剂的第一半导体层，第一半导体层上的有源层，有源层上的电子阻挡层，有源层和电子阻挡层之间的载流子注入层，以及第二半导体层 半导体层在电子阻挡层上具有第二导电掺杂剂。 载流子注入层包括第一导电掺杂剂和第二导电掺杂剂，并且载流子注入层的第一导电掺杂剂的浓度低于第二导电掺杂剂的浓度。

公开(公告)号：US20100295015A1

公开(公告)日：2010-11-25

申请号：US12768478

申请日：2010-04-27

申请人： Dae Sung KANG ,  Myung Hoon JUNG

发明人： Dae Sung KANG ,  Myung Hoon JUNG

IPC分类号： H01L33/04 ,  H01L33/62 ,  H01L33/36 ,  H01L33/52

CPC分类号： H01L33/007 ,  F21K9/23 ,  H01L21/0237 ,  H01L21/02458 ,  H01L21/02507 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02642 ,  H01L21/0265 ,  H01L33/0079 ,  H01L33/12 ,  H01L33/22 ,  H01L33/40 ,  H01L33/405 ,  H01L2224/48091 ,  H01L2924/00014

摘要： A light emitting device includes a plurality of clusters spread on a surface of a substrate and a first semiconductor layer provided over the plurality of clusters. The first semiconductor layer may includes air gaps above the plurality of clusters. In addition, light emitting structure may include a first conductive semiconductor layer adjacent to the first semiconductor layer, an active layer on the first conductive semiconductor layer, and a second conductive semiconductor layer on the active layer.

摘要翻译： 发光器件包括扩散在衬底的表面上的多个簇和设置在多个簇上的第一半导体层。 第一半导体层可以包括多个簇之上的气隙。 此外，发光结构可以包括与第一半导体层相邻的第一导电半导体层，第一导电半导体层上的有源层和有源层上的第二导电半导体层。

公开(公告)号：US20110240958A1

公开(公告)日：2011-10-06

申请号：US13079388

申请日：2011-04-04

申请人： Myung Hoon JUNG

发明人： Myung Hoon JUNG

IPC分类号： H01L33/06

CPC分类号： H01L33/22 ,  H01L33/0079 ,  H01L33/025 ,  H01L33/04 ,  H01L33/32 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2924/00014

摘要： A light emitting device according to the embodiment includes a conductive support substrate; a second conductive semiconductor layer on the conductive support substrate; an active layer on the second conductive semiconductor layer; a first conductive semiconductor layer on the active layer, the first conductive semiconductor layer including a GaN layer, an InGaN layer, and a roughness formed with selectively removed the GaN and InGaN layers; and an electrode layer on the first conductive semiconductor layer.

摘要翻译： 根据实施例的发光器件包括导电支撑衬底; 在所述导电支撑基板上的第二导电半导体层; 在所述第二导电半导体层上的有源层; 在所述有源层上的第一导电半导体层，所述第一导电半导体层包括GaN层，InGaN层和形成有选择性去除所述GaN和InGaN层的粗糙度; 以及第一导电半导体层上的电极层。