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公开(公告)号：US11289621B2
公开(公告)日：2022-03-29
申请号：US16768029
申请日：2018-11-26
Applicant: NICHIA CORPORATION , IMRA AMERICA, INC.
Inventor： Minoru Yamamoto , Naoto Inoue , Hiroaki Tamemoto , Yoshitaka Hotta , Hideyuki Ohtake
IPC: H01L21/00 , H01L33/00 , B23K26/0622 , B23K26/359 , B23K26/00 , B23K103/00
Abstract: A method includes preparing a wafer including a substrate and a semiconductor structure, and irradiating an inner portion of the substrate at a predetermined depth in a thickness direction a plurality of times with laser pulses at a first time interval and a predetermined distance interval between irradiations. Each irradiation performed at the first time intervals in the step of irradiating the substrate with laser pulses includes irradiating the substrate at a first focal position in the thickness direction with a first laser pulse having a first pulse-energy; and after irradiating with the first laser pulse, irradiating the substrate with a second laser pulse performed after a second time interval, the second time interval being shorter than the first time interval and being in a range of 3 ps to 900 ps, and the second laser pulse having a second pulse-energy 0.5 to 1.5 times the first pulse-energy.
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公开(公告)号：US11945173B2
公开(公告)日：2024-04-02
申请号：US17847928
申请日：2022-06-23
Applicant: Laser Systems Inc. , NICHIA CORPORATION
Inventor： Yuichi Asakawa , Yasuyuki Tsuboi , Hiroaki Tamemoto , Ryota Taoka , Minoru Yamamoto
CPC classification number: B29C65/1609 , B29C66/91221 , B29C66/952
Abstract: A method for processing a resin member includes: irradiating a first member comprising a resin with first light of a first wavelength that causes electronic excitation of the resin; and irradiating the resin electronically excited through irradiation with the first light with second light of a second wavelength longer than the first wavelength. A wavelength range of the second wavelength is within a wavelength range in which light absorption of the resin increases through electronic excitation of the resin.
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公开(公告)号：US11489086B2
公开(公告)日：2022-11-01
申请号：US16908354
申请日：2020-06-22
Applicant: NICHIA CORPORATION
Inventor： Naoto Inoue , Minoru Yamamoto , Satoshi Okumura , Hiroki Okamoto , Hiroaki Tamemoto
IPC: H01L33/00
Abstract: A method of manufacturing light emitting elements includes: providing a wafer including a substrate formed of sapphire and having a first main surface and a second main surface, and a semiconductor layered body disposed on the first main surface of the substrate; irradiating a laser beam into the substrate to form a modified region inside the substrate, the modified region having a crack reaching the first main surface and a crack reaching the second main surface; irradiating CO2 laser to a region of the substrate overlapping with a region to which the laser beam has been irradiated; and cleaving the wafer along the modified region to obtain the light emitting elements each having a hexagonal shape in a plan view.
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公开(公告)号：US09653644B2
公开(公告)日：2017-05-16
申请号：US15279811
申请日：2016-09-29
Applicant: NICHIA CORPORATION
Inventor： Hiroaki Tamemoto , Ryota Taoka
IPC: H01L21/786 , B23K26/50 , B23K26/53 , H01L33/00 , H01L33/06 , H01L33/32 , H01L33/42 , B23K26/00 , B23K101/40
CPC classification number: H01L33/0095 , B23K26/50 , B23K26/53 , B23K2101/40 , B23K2103/56 , H01L21/786 , H01L33/06 , H01L33/32 , H01L33/42
Abstract: A method for manufacturing a semiconductor element includes providing a wafer having a sapphire substrate and a semiconductor stacked body disposed on the sapphire substrate, performing a first scanning of a portion of the sapphire substrate in which a laser beam is irradiated into an interior of the sapphire substrate, performing a second scanning of the portion of the sapphire substrate in which a laser beam is irradiated into the interior of the sapphire substrate, the second scanning occurring after the first scanning and before a void is produced in the interior of the sapphire substrate irradiated with the laser beam in the first scanning, and separating the wafer into a plurality of semiconductor elements.
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公开(公告)号：US10084108B2
公开(公告)日：2018-09-25
申请号：US15471244
申请日：2017-03-28
Applicant: NICHIA CORPORATION
Inventor： Hiroaki Tamemoto , Chihiro Juasa
CPC classification number: H01L33/007 , H01L33/0095 , H01L33/20 , H01L33/22 , H01L33/32
Abstract: A method for manufacturing a light emitting element that includes preparing a wafer having a substrate and a semiconductor structure, the substrate including a plurality of protrusions at positions corresponding to lattice points on a regular triangular lattice. The method includes forming a plurality of first modified parts in the substrate by irradiating the substrate with a laser beam along first dividing lines, forming a plurality of second modified parts in the substrate by irradiating the substrate with a laser beam along second dividing lines, and dividing the wafer along the first modified parts and the second modified parts to obtain a plurality of light emitting elements.
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Patent Agency Ranking
公开(公告)号：US09324791B2
公开(公告)日：2016-04-26
申请号：US14250182
申请日：2014-04-10
Applicant: NICHIA CORPORATION
Inventor： Hiroaki Tamemoto
CPC classification number: H01L29/0657 , B23K26/0006 , B23K26/3568 , B23K26/53 , B23K2101/40 , B23K2103/56 , B28D5/0011 , H01L21/78 , H01L33/0095
Abstract: A semiconductor element includes a substrate and a semiconductor layer. The substrate has a first main face and a second main face. The semiconductor layer is formed on a side of one of the first main face and the second main face of the substrate. The substrate has a plurality of isolated processed portions and an irregularity face that runs from the processed portions at least to the first main face of the substrate and links adjacent ones of the processed portions.
Abstract translation: 半导体元件包括衬底和半导体层。 基板具有第一主面和第二主面。 半导体层形成在基板的第一主面和第二主面之一的一侧。 基板具有多个隔离处理部分和从处理部分至少延伸到基板的第一主面并连接相邻处理部分的凹凸面。
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公开(公告)号：US09209351B1
公开(公告)日：2015-12-08
申请号：US14830145
申请日：2015-08-19
Applicant: NICHIA CORPORATION
Inventor： Hiroaki Tamemoto
CPC classification number: H01L33/0075 , H01L33/0066 , H01L33/007 , H01L33/0095 , H01L33/025 , H01L33/10 , H01L33/12 , H01L33/20 , H01L33/22 , H01L33/32 , H01L2933/0033
Abstract: A method for manufacturing a light emitting element includes: preparing a wafer that has a substrate in which a first main face is provided with a plurality of convex components; and dividing the wafer along first dividing lines and second dividing lines. The convex components are in the form of circular cones or truncated circular cones, each of which having a circular bottom face and a side face that is connected to the bottom face, and disposed regularly so that a plurality of bounded regions are present around the convex components, and a shortest distance between the convex components and the centers of the bounded regions is less than a radius of the bottom faces of the convex components. The first and second dividing lines extend in a direction that intersects straight lines that link the centers of the plurality of bounded regions around a single convex component.
Abstract translation: 一种发光元件的制造方法，包括：准备具有基板的晶片，所述基板的第一主面设置有多个凸部; 并且沿着第一分割线和第二分割线分割晶片。 凸形部件为圆锥体或截头圆锥体的形式，每个圆锥体具有圆形底面和连接到底面的侧面，并且规则地布置，使得围绕凸部存在多个有界区域 凸起部件和有界区域的中心之间的最短距离小于凸部件的底面的半径。 第一分割线和第二分割线在与多个有界区域的中心围绕单个凸部分连接的直线相交的方向上延伸。
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公开(公告)号：US12233481B2
公开(公告)日：2025-02-25
申请号：US17763379
申请日：2020-08-07
Applicant: NICHIA CORPORATION , HAMAMATSU PHOTONICS K.K.
Inventor： Hiroaki Tamemoto , Minoru Yamamoto , Yusuke Sekimoto , Ryota Sugio , Tominori Nakamura
IPC: B23K26/53 , B23K26/046 , B23K26/0622 , B23K101/40 , H01L21/78
Abstract: This laser processing apparatus is for forming modified regions in an object, which includes a sapphire substrate having a C-plane as a main surface, along cutting lines by focusing laser light on the object, and is provided with a laser light source, a spatial light modulator, and a focusing optical system. The spatial light modulator performs aberration correction by a first aberration correction amount smaller than an ideal aberration correction amount when the modified region is formed along a first cutting line along an a-axis direction of the sapphire substrate, and performs aberration correction by a second aberration correction amount smaller than the ideal aberration correction amount and different from the first aberration correction amount when the modified region is formed along a second cutting line along an m-axis direction of the sapphire substrate.
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公开(公告)号：US11769852B2
公开(公告)日：2023-09-26
申请号：US16945729
申请日：2020-07-31
Applicant: NICHIA CORPORATION
Inventor： Masayuki Ibaraki , Minoru Yamamoto , Naoto Inoue , Hiroaki Tamemoto
IPC: H01L21/00 , H01L33/00 , H01L25/075 , H01L33/20
CPC classification number: H01L33/0095 , H01L25/0753 , H01L33/20
Abstract: A method of manufacturing a light emitting element according to certain embodiments of the present disclosure includes: scanning and irradiating a first laser light having a first irradiation intensity to a sapphire substrate along predetermined dividing lines collectively in a shape of a tessellation of a plurality of hexagonal shapes in a top view to create a plurality of first modified regions along the predetermined dividing lines; and scanning and irradiating a second laser light having a second irradiation intensity greater than the first irradiation intensity to the sapphire substrate along the predetermined dividing lines to create a plurality of second modified regions overlapping the plurality of first modified regions.
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公开(公告)号：US09640714B2
公开(公告)日：2017-05-02
申请号：US14466354
申请日：2014-08-22
Applicant: NICHIA CORPORATION
Inventor： Hiroaki Tamemoto , Chihiro Juasa
CPC classification number: H01L33/007 , H01L33/0095 , H01L33/20 , H01L33/22 , H01L33/32
Abstract: A method for manufacturing a light emitting element that includes preparing a wafer having a substrate and a semiconductor structure, the substrate including a plurality of protrusions at positions corresponding to lattice points on a triangular lattice. The method includes forming a plurality of first modified parts in the substrate by irradiating the substrate with a laser beam along first dividing lines, forming a plurality of second modified parts in the substrate by irradiating the substrate with a laser beam along second dividing lines, and dividing the wafer along the first modified parts and the second modified parts to obtain a plurality of light emitting elements.
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