摘要:
A substrate stacking apparatus that stacks first and second substrates on each other, by forming a contact region where the first substrate held by a first holding section and the second substrate held by a second holding section contact each other, at one portion of the first and second substrates, and expanding the contact region from the one portion by releasing holding of the first substrate by the first holding section, wherein an amount of deformation occurring in a plurality of directions at least in the first substrate differs when the contact region expands, and the substrate stacking apparatus includes a restricting section that restricts misalignment between the first and second substrates caused by a difference in the amount of deformation. In the substrate stacking apparatus above, the restricting section may restrict the misalignment such that an amount of the misalignment is less than or equal to a prescribed value.
摘要:
The terminals that oppose each other when substrates are bonded are designed to be reliably joined. Comprised in a semiconductor device design system are a numerical value acquiring part, which acquires the respective numerical values of a plurality of calculation parameters, a junction estimating part, which, in the case in which a plurality of substrates has been pressed at a prescribed pressure so that the bump front end faces come into contact, estimates whether or not the respective mutually opposing bumps will be joined based on the respective numerical values of the calculation parameters acquired by the numerical value acquiring part, and a change processing part, which, in the case in which it has been estimated by the junction estimating part that any of the bumps will not be joined, gives a warning or performs processing so as to change the numerical value of at least one calculation parameter among the plurality of calculation parameters.
摘要:
At least a part of a heat radiation member (9) connected to a DRAM (11) for radiating heat of the DRAM (11) is exposed from a protection member (4) arranged to surround the DRAM and the heat radiation member (9) so as to protect the DRAM (11). Thus, it is possible to provide a semiconductor device having a preferable heat radiation performance.
摘要:
A substrate holder includes a central support portion configured to support a central portion of a substrate, and an circumferential support portion arranged on an outside of the central support portion and configured to support a circumferential portion on an outside of the central portion, and the circumferential support portion is configured to support the circumferential portion so that at least a partial region of the circumferential portion is curved toward the substrate holder with a curvature greater than that of the central portion.
摘要:
A manufacturing method for manufacturing a stacked substrate by bonding two substrates includes: acquiring information about crystal structures of a plurality of substrates; and determining a combination of two substrates to be bonded to each other, based on the information about the crystal structures. In the manufacturing method described above, the information about the crystal structures may include at least one of plane orientations of bonding surfaces and crystal orientations in a direction in parallel with the bonding surfaces. In the manufacturing methods described above, the determining may include determining a combination of the two substrates with a misalignment amount after bonding being equal to or smaller than a predetermined threshold.
摘要:
A substrate bonding apparatus that brings a part of a surface of a first substrate and a part of a surface of a second substrate into contact to form contact regions at the parts, and then enlarges the contact regions to bond the first substrate and the second substrate includes: a temperature adjusting unit that adjusts a temperature of at least one of the first substrate and the second substrate such that positional misalignment between the first substrate and the second substrate does not exceed a threshold at least in a course of enlargement of the contact regions.
摘要:
Provided is a multi-layered semiconductor apparatus with improved heat diffusion and improved heat release. The multi-layered semiconductor apparatus (100) includes a plurality of layered semiconductor chips (20-1, 20-2) that each include at least one circuit region, and the circuit regions are arranged such that heat generated by the circuit regions as a result of the circuit regions being driven is spread out. The multi-layered semiconductor apparatus (100) further comprises a heat releasing section (50) that releases the heat generated by the circuit regions, and the circuit regions are arranged such that there is less thermal resistance between the heat releasing section and circuit regions that generate a greater amount of heat per unit area.
摘要:
A method for bonding a first substrate and a second substrate includes: forming a protrusion at a partial region of the first substrate; measuring a position of the first substrate after the protrusion is formed in the first substrate; and bonding the first substrate and the second substrate by contacting the protrusion of the first substrate with a surface of the second substrate to form a contact region and enlarging the contact region.
摘要:
A method of manufacturing a stacked substrate by bonding a first substrate and a second substrate, including a step of determining, based on information about curving of each of the first substrate and the second substrate, whether or not the first substrate and the second substrate satisfy a predetermined condition, and, a step of bonding the first substrate and the second substrate if the predetermined condition is satisfied. The stacked substrate manufacturing method described above includes a step of estimating, based on the information, an amount of misalignment which occurs after the first substrate is bonded to the second substrate and the predetermined condition may include that the amount of misalignment is equal to or less than a threshold.
摘要:
To improve the throughput of substrate bonding. A substrate bonding apparatus that bonds first and second substrates so that contact regions in which the first and second substrates contact are formed in parts of the first and second substrates and the contact regions enlarge from the parts, the apparatus including: a detecting unit detecting information about the contact regions; and a determining unit determining that the first and second substrates can be carried out based on the information detected at the detecting unit. In the substrate bonding apparatus, the information may be information, a value of which changes according to progress of enlargement of the contact regions, and the determining unit may determine that the first and second substrates can be carried out if the value becomes constant or if a rate of changes in the value becomes lower than a predetermined value.