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    Carbonaceous electrode material for secondary battery
    1.
    发明授权
    Carbonaceous electrode material for secondary battery 失效
    二次电池碳质电极材料

    公开(公告)号：US5587255A

    公开(公告)日：1996-12-24

    申请号：US199810

    申请日：1994-02-22

    申请人： Naohiro Sonobe ,  Koji Maruyama ,  Takao Iwasaki

    发明人： Naohiro Sonobe ,  Koji Maruyama ,  Takao Iwasaki

    IPC分类号： C01B31/00 ,  C01B31/02 ,  H01B1/04 ,  H01M4/587 ,  H01M4/96 ,  H01M10/05 ,  H01M10/0566 ,  H01M4/02

    CPC分类号： H01M4/583 ,  H01B1/04 ,  H01M4/96

    摘要： A carbonaceous electrode having improved capacities of doping and dedoping a cell active substance, such as lithium, and suitable for a non-aqueous solvent-type secondary battery, is constituted by a carbonaceous material having a specific microtexture. The carbonaceous material is characterized by having an average (002)-plane spacing of at least 0.365 nm according to an X-ray diffraction test, and by providing a residual carbonaceous substance showing an average (002) plane-spacing of at most 0.350 nm according to an X-ray diffraction test when the carbonaceous material is treated with an H.sub.2 O--N.sub.2 equi-molar gaseous mixture at 900.degree. C. up to a weight reduction of 60%.

    摘要翻译： 具有改进的掺杂和去除诸如锂的电池活性物质并适用于非水溶剂型二次电池的能力的碳质电极由具有特定微结构的碳质材料构成。 碳质材料的特征在于，根据X射线衍射测试，平均（002）面间距至少为0.365nm，并且通过提供平均（002）面间距至多0.350nm的残留碳质物质 根据X射线衍射试验，当碳质材料在900℃下用H 2 O-N 2等摩尔气体混合物处理至60％的重量减少时。

    Method for manufacturing semiconductor device
    3.
    发明授权
    Method for manufacturing semiconductor device 有权
    制造半导体器件的方法

    公开(公告)号：US08716144B2

    公开(公告)日：2014-05-06

    申请号：US13512372

    申请日：2010-11-17

    申请人： Shuichiro Uda ,  Koji Maruyama ,  Yusuke Hirayama

    发明人： Shuichiro Uda ,  Koji Maruyama ,  Yusuke Hirayama

    IPC分类号： H01L21/302

    CPC分类号： H01L21/3065

    摘要： A method for manufacturing a semiconductor device for forming a deep hole in a substrate by using a photoresist film formed on the substrate includes a positioning step of positioning a substrate inside an etching chamber, the substrate having a photoresist film including an opening part formed thereon, a first etching step of performing plasma etching on the substrate positioned inside the etching chamber by using a first mixed gas including at least SiF4 and O2 with the photoresist film as a mask, and a second etching step of forming a hole in the substrate by performing plasma etching on the substrate by using a second mixed gas including at least SF6, O2, and HBr after the first etching step.

    摘要翻译： 通过使用形成在基板上的光致抗蚀剂膜来制造用于在基板中形成深孔的半导体器件的方法包括：将蚀刻室内的基板定位的定位步骤，所述基板具有包括形成在其上的开口部的光致抗蚀剂膜， 第一蚀刻步骤，通过使用至少包含SiF 4和O 2的第一混合气体与光致抗蚀剂膜作为掩模，在位于蚀刻室内的基板上进行等离子体蚀刻;以及第二蚀刻步骤，通过执行在基板中形成孔 在第一蚀刻步骤之后通过使用至少包括SF 6，O 2和HBr的第二混合气体在衬底上进行等离子体蚀刻。

    Process for producing metal composite material
    4.
    发明申请
    Process for producing metal composite material 审中-公开
    金属复合材料生产工艺

    公开(公告)号：US20120056360A1

    公开(公告)日：2012-03-08

    申请号：US13199747

    申请日：2011-09-08

    申请人： Makoto Fujita ,  Koji Maruyama ,  Ikuo Suzuki

    发明人： Makoto Fujita ,  Koji Maruyama ,  Ikuo Suzuki

    IPC分类号： C04B35/10

    CPC分类号： C04B41/5155 ,  C04B38/009 ,  C04B41/009 ,  C04B41/88 ,  C04B35/10 ,  C04B38/00 ,  C04B41/4523 ,  C04B41/457

    摘要： Producing a metal composite material by mixing hydrated ceramic particles, having water of crystallization that is bound within fine pores which have an average pore diameter of 1 nm or more and 80 nm or less, with a reinforcing material, the resulting mixture being sintered to form a preform which is then impregnated with a melt of an aluminum alloy and subjected to surface polishing. The ceramic particles, from which water of crystallization has been removed while the average pore diameter of the pores thereof is maintained, are dispersed uniformly, it is possible to obtain the metal composite material in which the ceramic particles that have fine pores are exposed on surfaces evenly in a stable manner by surface polishing that is conducted after the melt impregnation. The metal composite material can permit infiltration of a lubricating oil into the fine pores.

    摘要翻译： 通过将具有结晶的水结合的水合陶瓷颗粒与平均孔径为1nm以上且80nm以下的细孔混合，形成金属复合材料，所得到的混合物被烧结而形成 预制件，然后用铝合金熔体浸渍并进行表面抛光。 在保持结晶孔的平均孔径的同时除去了结晶水的陶瓷颗粒被均匀地分散，可以获得具有细孔的陶瓷颗粒暴露在表面上的金属复合材料 通过在熔融浸渍之后进行的表面抛光以均匀的方式均匀。 金属复合材料可以允许润滑油渗透到细孔中。

    Semiconductor device and method of manufacturing the same
    5.
    发明授权
    Semiconductor device and method of manufacturing the same 有权
    半导体装置及其制造方法

    公开(公告)号：US07470998B2

    公开(公告)日：2008-12-30

    申请号：US11373154

    申请日：2006-03-13

    申请人： Katsuya Okumura ,  Koji Maruyama ,  Kazuya Nagaseki ,  Akiteru Rai

    发明人： Katsuya Okumura ,  Koji Maruyama ,  Kazuya Nagaseki ,  Akiteru Rai

    IPC分类号： H01L23/84 ,  H01L23/52 ,  H01L29/40

    CPC分类号： H01L21/76898 ,  H01L23/481 ,  H01L2924/0002 ,  H01L2924/00 ,  H01L2924/00012

    摘要： The present invention relates to a semiconductor device in which an electrode of a device formed on a substrate such as a semiconductor wafer and an electrode of a wiring structure such as an interposer are connected to each other through a connecting electrode extending through the substrate, and a method of manufacturing the same. A semiconductor device according to the present invention comprises a first substrate including a front surface and a back surface, a first device having a first electrode being formed on the front surface; and a wiring structure formed with a second electrode, the wiring structure having a principal surface. The first electrode of the first device and the second electrode of the wiring structure are connected to each other by a connecting electrode extending through the first substrate from the front surface to the back surface thereof. Substantially all the back surface of the first substrate is bonded to the principal surface of the wiring structure. A dielectric film formed between the first substrate and the wiring structure may be an adhesive layer.

    摘要翻译： 本发明涉及一种半导体器件，其中形成在诸如半导体晶片的基板上的器件的电极和诸如中介层之类的布线结构的电极通过延伸穿过衬底的连接电极相互连接， 其制造方法。 根据本发明的半导体器件包括：第一衬底，包括前表面和后表面;第一器件，具有形成在前表面上的第一电极; 以及形成有第二电极的布线结构，所述布线结构具有主表面。 第一器件的第一电极和布线结构的第二电极通过从第一衬底的前表面延伸到后表面的连接电极彼此连接。 基本上所有的第一基板的所有后表面被结合到布线结构的主表面。 形成在第一基板和布线结构之间的电介质膜可以是粘合剂层。

    Plasma processing apparatus and plasma processing method
    7.
    发明申请
    Plasma processing apparatus and plasma processing method 有权
    等离子体处理装置和等离子体处理方法

    公开(公告)号：US20050172904A1

    公开(公告)日：2005-08-11

    申请号：US10675966

    申请日：2003-10-02

    申请人： Chishio Koshimizu ,  Hiroyuki Ishihara ,  Kimihiro Higuchi ,  Koji Maruyama

    发明人： Chishio Koshimizu ,  Hiroyuki Ishihara ,  Kimihiro Higuchi ,  Koji Maruyama

    IPC分类号： H05H1/46 ,  C23C16/00 ,  C23F4/00 ,  H01L21/205 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/68 ,  H01L21/683 ,  H05H1/00

    CPC分类号： H01L21/6831 ,  H01J37/32623 ,  H01J37/32642 ,  H01J2237/2001 ,  H01L21/67248 ,  Y10S156/915

    摘要： An electrostatic chuck 108 is provided on a lower electrode 106 provided inside a processing chamber 102 of an etching apparatus 100, and a conductive inner ring body 112a and an insulating outer ring body 112b are encompassing the outer edges of a wafer W mounted on the chuck surface. The temperatures of the wafer W and the inner and outer ring bodies 112a and 112b are detected by first third temperature sensors 142, 144 and 146. A controller 140 controls the pressure levels of He supplied to the space between the center of the wafer W and the electrostatic chuck 108 via first gas outlet ducts 114 and to the space between the outer edges of the wafer W and the electrostatic chuck 108 via second gas outlet ducts 116 and the quantity of heat generated by a heater 148 inside the outer ring body 112b based upon the information on the temperatures thus detected so that the temperatures of the wafer W and the inner ring body 112a are set roughly equal to each other.

    摘要翻译： 静电吸盘108设置在设置在蚀刻装置100的处理室102内部的下部电极106上，并且导电内圈主体112a和绝缘外圈主体112b围绕安装在晶片W的外边缘 卡盘表面。 晶片W和内外环体112a和112b的温度由第一第三温度传感器142,144和146检测。控制器140控制供应给晶片中心之间的空间的He的压力水平 W和静电卡盘108经由第一气体出口管114以及经由第二气体出口管道116到晶片W的外边缘和静电卡盘108之间的空间以及由外部环体内的加热器148产生的热量 112b基于如此检测的温度的信息，使得晶片W和内环体112a的温度大致相等。

    Semiconductor device and method of manufacturing the same
    8.
    发明申请
    Semiconductor device and method of manufacturing the same 有权
    半导体装置及其制造方法

    公开(公告)号：US20050087853A1

    公开(公告)日：2005-04-28

    申请号：US10855889

    申请日：2004-05-28

    申请人： Katsuya Okumura ,  Koji Maruyama ,  Kazuya Nagaseki ,  Akiteru Rai

    发明人： Katsuya Okumura ,  Koji Maruyama ,  Kazuya Nagaseki ,  Akiteru Rai

    IPC分类号： H01L23/52 ,  H01L21/3205 ,  H01L21/768 ,  H01L23/12 ,  H01L23/48 ,  H01L25/065 ,  H01L25/07 ,  H01L25/18 ,  H01L23/02 ,  H05K7/02

    CPC分类号： H01L21/76898 ,  H01L23/481 ,  H01L2924/0002 ,  H01L2924/00 ,  H01L2924/00012

    摘要： The present invention relates to a semiconductor device in which an electrode of a device formed on a substrate such as a semiconductor wafer and an electrode of a wiring structure such as an interposer are connected to each other through a connecting electrode extending through the substrate, and a method of manufacturing the same. A semiconductor device according to the present invention comprises a first substrate including a front surface and a back surface, a first device having a first electrode being formed on the front surface; and a wiring structure formed with a second electrode, the wiring structure having a principal surface. The first electrode of the first device and the second electrode of the wiring structure are connected to each other by a connecting electrode extending through the first substrate from the front surface to the back surface thereof. Substantially all the back surface of the first substrate is bonded to the principal surface of the wiring structure. A dielectric film formed between the first substrate and the wiring structure may be an adhesive layer.

    摘要翻译： 本发明涉及一种半导体器件，其中形成在诸如半导体晶片的基板上的器件的电极和诸如中介层之类的布线结构的电极通过延伸穿过衬底的连接电极相互连接， 其制造方法。 根据本发明的半导体器件包括：第一衬底，包括前表面和后表面;第一器件，具有形成在前表面上的第一电极; 以及形成有第二电极的布线结构，所述布线结构具有主表面。 第一器件的第一电极和布线结构的第二电极通过从第一衬底的前表面延伸到后表面的连接电极彼此连接。 基本上所有的第一基板的所有后表面被结合到布线结构的主表面。 形成在第一基板和布线结构之间的电介质膜可以是粘合剂层。