公开(公告)号：US06927107B1

公开(公告)日：2005-08-09

申请号：US09667527

申请日：2000-09-22

申请人： Naoki Makita ,  Hiromi Sakamoto ,  Masao Moriguchi

发明人： Naoki Makita ,  Hiromi Sakamoto ,  Masao Moriguchi

IPC分类号： C30B29/06 ,  H01L21/00 ,  H01L21/20 ,  H01L21/268 ,  H01L21/322 ,  H01L21/336 ,  H01L21/77 ,  H01L21/84 ,  H01L27/12 ,  H01L29/786

CPC分类号： H01L21/02672 ,  H01L21/02422 ,  H01L21/02488 ,  H01L21/02532 ,  H01L21/02595 ,  H01L21/0262 ,  H01L21/02686 ,  H01L21/2022 ,  H01L21/2026 ,  H01L27/1277 ,  H01L29/66757

摘要： In a production method of a semiconductor device, a catalyst element, e.g. Ni, is added to an amorphous silicon film, formed on a substrate with an insulating surface, for promoting crystallization of the amorphous silicon film. Thereafter, the amorphous silicon film is subjected to heat treatment to cause crystal growth therein. Next, the crystal growth is stopped in a state where minute amorphous regions (uncrystallized regions) remain in the film. Next, the silicon film is irradiated with strong light (laser light) so as to be further crystallized. As a result, a crystalline silicon film that has high quality and is excellent in uniformity is obtained.

摘要翻译： 在半导体器件的制造方法中，催化剂元件例如 将Ni添加到形成在具有绝缘表面的基板上的非晶硅膜中，用于促进非晶硅膜的结晶。 然后，对非晶硅膜进行热处理，使晶体生长。 接下来，在薄膜中保留微小的非晶区域（未结晶区域）的状态下停止晶体生长。 接着，用强光（激光）照射硅膜，进一步结晶。 结果，得到质量好，均匀性优异的结晶硅膜。

公开(公告)号：US06770515B1

公开(公告)日：2004-08-03

申请号：US09660516

申请日：2000-09-12

申请人： Naoki Makita ,  Masao Moriguchi

发明人： Naoki Makita ,  Masao Moriguchi

IPC分类号： H01L2100

CPC分类号： H01L21/02672 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02675 ,  H01L21/2022 ,  H01L21/2026 ,  H01L27/1277 ,  H01L29/66757 ,  H01L29/78675

摘要： A TFT 123 formed on a glass substrate 101 has a crystalline silicon film 108 that serves as an active region. The crystalline silicon film 108 is formed by forming an a-Si film 103 containing hydrogen on the glass substrate 101, thereafter adding nickel 104 to the surface of the a-Si film 103 and subjecting the a-Si film 103 to which the nickel 104 has been added to heat treatment. The crystal grain size of each crystal of the crystalline silicon film 108 is smaller than the size of the channel region of a TFT 123. With this arrangement, a high-performance semiconductor device that has stable characteristics with little characteristic variation and a high integration density and is simply fabricated with high yield can be provided.

摘要翻译： 形成在玻璃基板101上的TFT123具有作为活性区域的结晶硅膜108。 通过在玻璃基板101上形成含有氢的a-Si膜103，然后将镍104加入到a-Si膜103的表面，并对其中的镍104 已加入热处理。 结晶硅膜108的每个晶体的晶粒尺寸小于TFT 123的沟道区域的尺寸。通过这种布置，具有稳定特性，几乎没有特征变化和高集成密度的高性能半导体器件 并且可以提供高产量的简单制造。

公开(公告)号：US08999823B2

公开(公告)日：2015-04-07

申请号：US13125865

申请日：2009-10-20

申请人： Naoki Makita ,  Hiroshi Nakatsuji

发明人： Naoki Makita ,  Hiroshi Nakatsuji

IPC分类号： H01L27/12 ,  H01L27/146 ,  G09G5/10 ,  G06F3/042 ,  H01L29/786

CPC分类号： H01L27/14665 ,  G06F3/042 ,  G09G5/10 ,  H01L27/12 ,  H01L27/1229 ,  H01L29/78633

摘要： A semiconductor device according to the present invention includes a thin-film transistor and a thin-film diode. The respective semiconductor layers and of the thin-film transistor and the thin-film diode are crystalline semiconductor layers that have been formed by crystallizing the same crystalline semiconductor film. Ridges have been formed on the surface of the semiconductor layer of the thin-film diode. And the semiconductor layer of the thin-film diode has a greater surface roughness than the semiconductor layer of the thin-film transistor.

摘要翻译： 根据本发明的半导体器件包括薄膜晶体管和薄膜二极管。 各半导体层以及薄膜晶体管和薄膜二极管是通过使相同的结晶半导体膜结晶而形成的结晶半导体层。 已经在薄膜二极管的半导体层的表面上形成了脊。 并且薄膜二极管的半导体层具有比薄膜晶体管的半导体层更大的表面粗糙度。

公开(公告)号：US08460954B2

公开(公告)日：2013-06-11

申请号：US13125776

申请日：2009-10-22

申请人： Masaki Yamanaka ,  Hiroshi Nakatsuji ,  Naoki Makita

发明人： Masaki Yamanaka ,  Hiroshi Nakatsuji ,  Naoki Makita

IPC分类号： H01L21/00 ,  H01L21/20 ,  H01L21/36 ,  H01L27/14 ,  H01L29/04 ,  H01L29/15 ,  H01L31/036

CPC分类号： H01L29/66757 ,  G02F1/1368 ,  G02F2001/13312 ,  H01L27/0629 ,  H01L27/12 ,  H01L27/1229 ,  H01L27/1233 ,  H01L27/14612 ,  H01L29/78633 ,  H01L29/861

摘要： A semiconductor device includes a thin film transistor and a thin film diode on a same substrate. A semiconductor layer (109) of the thin film transistor and a semiconductor layer (110) of the thin film diode are crystalline semiconductor layers formed by crystallizing the same non-crystalline semiconductor film. The thickness of the semiconductor layer (110) of the thin film diode is greater than the thickness of the semiconductor layer (109) of the thin film transistor, and the surface of the semiconductor layer (110) of the thin film diode is rougher than the surface of the semiconductor layer (109) of the thin film transistor.

摘要翻译： 半导体器件在同一衬底上包括薄膜晶体管和薄膜二极管。 薄膜晶体管的半导体层（109）和薄膜二极管的半导体层（110）是通过使相同的非晶半导体膜结晶而形成的结晶半导体层。 薄膜二极管的半导体层（110）的厚度大于薄膜晶体管的半导体层（109）的厚度，并且薄膜二极管的半导体层（110）的表面比 薄膜晶体管的半导体层（109）的表面。

公开(公告)号：US20110198608A1

公开(公告)日：2011-08-18

申请号：US13125776

申请日：2009-10-22

申请人： Masaki Yamanaka ,  Hiroshi Nakatsuji ,  Naoki Makita

发明人： Masaki Yamanaka ,  Hiroshi Nakatsuji ,  Naoki Makita

IPC分类号： H01L31/0368 ,  H01L29/786 ,  H01L21/20 ,  H01L29/04 ,  H01L31/14 ,  B82Y99/00

CPC分类号： H01L29/66757 ,  G02F1/1368 ,  G02F2001/13312 ,  H01L27/0629 ,  H01L27/12 ,  H01L27/1229 ,  H01L27/1233 ,  H01L27/14612 ,  H01L29/78633 ,  H01L29/861

摘要： A semiconductor device includes a thin film transistor and a thin film diode on a same substrate. A semiconductor layer (109) of the thin film transistor and a semiconductor layer (110) of the thin film diode are crystalline semiconductor layers formed by crystallizing the same non-crystalline semiconductor film. The thickness of the semiconductor layer (110) of the thin film diode is greater than the thickness of the semiconductor layer (109) of the thin film transistor, and the surface of the semiconductor layer (110) of the thin film diode is rougher than the surface of the semiconductor layer (109) of the thin film transistor.

摘要翻译： 半导体器件在同一衬底上包括薄膜晶体管和薄膜二极管。 薄膜晶体管的半导体层（109）和薄膜二极管的半导体层（110）是通过使相同的非晶半导体膜结晶而形成的结晶半导体层。 薄膜二极管的半导体层（110）的厚度大于薄膜晶体管的半导体层（109）的厚度，并且薄膜二极管的半导体层（110）的表面比 薄膜晶体管的半导体层（109）的表面。

公开(公告)号：US20100181575A1

公开(公告)日：2010-07-22

申请号：US12667465

申请日：2008-06-05

申请人： Naoki Makita ,  Masato Hashimoto

发明人： Naoki Makita ,  Masato Hashimoto

IPC分类号： H01L33/00 ,  H01L29/786 ,  H01L21/336

CPC分类号： H01L27/127 ,  H01L27/1214 ,  H01L27/1274 ,  H01L29/66757 ,  H01L29/66765 ,  H01L29/78618

摘要： A semiconductor device includes at least one thin-film transistor 116, which includes: a crystalline semiconductor layer 120 including a region 110 to be a channel region and source and drain regions 113; a gate electrode 107 for controlling the conductivity of the region 110 to be a channel region; a gate insulating film 106 arranged between the semiconductor layer 120 and the gate electrode 107; and source and drain electrodes 115 connected to the source and drain regions 113, respectively. At least one of the source and drain regions 113 contains an element to be a donor or an acceptor and a rare-gas element, but the region 110 to be a channel region does not contain the rare-gas element. The atomic weight of the rare-gas element is greater than that of the element to be a donor or an acceptor. The concentration of the rare-gas element in the at least one region as measured in the thickness direction thereof decreases continuously from the upper surface of the at least one region toward its lower surface.

摘要翻译： 半导体器件包括至少一个薄膜晶体管116，其包括：晶体半导体层120，其包括作为沟道区的区域110以及源极和漏极区113; 用于将区域110的导电性控制为沟道区的栅电极107; 布置在半导体层120和栅电极107之间的栅极绝缘膜106; 以及分别连接到源区113和漏区113的源电极115和漏电极115。 源极区域113和漏极区域113中的至少一个包含作为供体或受体的元素和稀有气体元素，但是作为沟道区域的区域110不含有稀有气体元素。 稀有气体元素的原子量大于作为供体或受体的元素的原子量。 在其厚度方向上测量的至少一个区域中的稀有气体元素的浓度从至少一个区域的上表面向其下表面连续地减小。

公开(公告)号：US07612375B2

公开(公告)日：2009-11-03

申请号：US10421841

申请日：2003-04-24

申请人： Naoki Makita

发明人： Naoki Makita

IPC分类号： H01L29/04 ,  H01L29/76

CPC分类号： H01L27/1229 ,  H01L27/1214 ,  H01L27/127 ,  H01L27/1277 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/66757

摘要： A semiconductor device includes at least one thin-film transistor, which includes a semiconductor layer, a gate electrode and a gate insulating film. In the semiconductor layer, a crystalline region, including a channel forming region, a source region and a drain region, is defined. The gate electrode is provided to control the conductivity of the channel forming region. The gate insulating film is provided between the gate electrode and the semiconductor layer. The semiconductor layer includes a gettering region outside of the crystalline region thereof.

摘要翻译： 半导体器件包括至少一个薄膜晶体管，其包括半导体层，栅极电极和栅极绝缘膜。 在半导体层中，限定了包括沟道形成区域，源极区域和漏极区域的结晶区域。 提供栅电极以控制沟道形成区的导电性。 栅极绝缘膜设置在栅电极和半导体层之间。 半导体层包括其结晶区域外的吸杂区域。

公开(公告)号：US07396709B2

公开(公告)日：2008-07-08

申请号：US11780573

申请日：2007-07-20

申请人： Naoki Makita

发明人： Naoki Makita

IPC分类号： H01L21/00

CPC分类号： H01L27/12 ,  H01L27/1285 ,  H01L29/06 ,  H01L29/42384

摘要： A semiconductor device includes a thin film transistor including a semiconductor layer that includes a channel region, a source region and a drain region, a gate insulating film provided on the semiconductor layer, and a gate electrode for controlling the conductivity of the channel region, wherein the surface of the semiconductor layer includes a minute protruding portion, and the side surface inclination angle of the gate electrode is larger than the inclination angle of the protruding portion of the semiconductor layer.

摘要翻译： 半导体器件包括薄膜晶体管，其包括包括沟道区，源极区和漏极区的半导体层，设置在半导体层上的栅极绝缘膜，以及用于控制沟道区的导电性的栅电极，其中 半导体层的表面包括微小突出部分，并且栅电极的侧表面倾斜角度大于半导体层的突出部分的倾斜角度。

公开(公告)号：US07049183B2

公开(公告)日：2006-05-23

申请号：US10699460

申请日：2003-11-03

申请人： Naoki Makita ,  Michinori Iwai ,  Shinya Morino ,  Takayuki Tsutsumi

发明人： Naoki Makita ,  Michinori Iwai ,  Shinya Morino ,  Takayuki Tsutsumi

IPC分类号： H01L21/84 ,  H01L21/00

CPC分类号： H01L21/02672 ,  H01L21/02675 ,  H01L21/2022 ,  H01L27/12 ,  H01L27/1277 ,  H01L29/41733 ,  H01L29/66757 ,  H01L29/78675

摘要： A method of the present invention includes the steps of forming an amorphous semiconductor layer on an insulative surface, adding a catalyst element capable of promoting crystallization to the amorphous semiconductor layer and then performing a first heat treatment so as to crystallize the amorphous semiconductor layer, thereby obtaining a crystalline semiconductor layer, performing a first gettering process to remove the catalyst element from the semiconductor layer, and performing a second gettering process that is different from the first gettering process to remove the catalyst element from the semiconductor layer. The first gettering process includes removing at least large masses of a semiconductor compound of the catalyst element present in the crystalline semiconductor layer. The second gettering process includes moving at least a portion of the catalyst element remaining in the crystalline semiconductor layer so as to form a low-catalyst-concentration region in the crystalline semiconductor layer, the low-catalyst-concentration region having a lower catalyst element concentration than in other regions.

摘要翻译： 本发明的方法包括以下步骤：在绝缘表面上形成非晶半导体层，向非晶半导体层添加能够促进结晶的催化剂元件，然后进行第一热处理以使非晶半导体层结晶，由此 获得晶体半导体层，执行第一吸气工艺以从半导体层去除催化剂元件，以及执行与第一吸气过程不同的第二吸气过程以从半导体层去除催化剂元件。 第一吸气方法包括除去至少大质量的结晶半导体层中存在的催化剂元素的半导体化合物。 第二吸气过程包括将至少一部分留在结晶半导体层中的催化剂元素移动以在结晶半导体层中形成低催化剂浓度区域，低催化剂浓度区域具有较低的催化剂元素浓度 比其他地区。

公开(公告)号：US5936291A

公开(公告)日：1999-08-10

申请号：US16337

申请日：1998-01-30

申请人： Naoki Makita ,  Muneyuki Motohashi ,  Hidehiko Yamashita ,  Hideo Izawa

发明人： Naoki Makita ,  Muneyuki Motohashi ,  Hidehiko Yamashita ,  Hideo Izawa

IPC分类号： H01L21/316 ,  H01L21/28 ,  H01L21/336 ,  H01L21/77 ,  H01L21/84 ,  H01L27/12 ,  H01L29/51 ,  H01L29/786 ,  H01L29/76 ,  H01L29/94 ,  H01L31/062 ,  H01L31/113

CPC分类号： H01L21/28185 ,  H01L21/28158 ,  H01L21/28194 ,  H01L27/1214 ,  H01L29/51 ,  H01L29/513 ,  H01L29/66757 ,  H01L29/78603

摘要： The thin film transistor of this invention is formed on a substrate and includes an active layer and a first insulating film and a second insulating film sandwiching the active layer, wherein the overall polarity of fixed charges contained in the first insulating film is the reverse of the overall polarity of fixed charges contained in the second insulating film.

摘要翻译： 本发明的薄膜晶体管形成在基板上，包括有源层和第一绝缘膜以及夹持有源层的第二绝缘膜，其中包含在第一绝缘膜中的固定电荷的总极性与 包含在第二绝缘膜中的固定电荷的总极性。