IN-SITU BORON DOPED PDC ELEMENT
    9.
    发明申请
    IN-SITU BORON DOPED PDC ELEMENT 审中-公开
    IN-SITU BORON DOPED PDC元素

    公开(公告)号:US20150176335A1

    公开(公告)日:2015-06-25

    申请号:US14632910

    申请日:2015-02-26

    IPC分类号: E21B10/56 B24D18/00 B24D3/06

    摘要: A polycrystalline diamond compact formed in an in-situ boron-doped process. The in-situ boron-doped process includes consolidating a mixture of diamond crystals and boron-containing alloy via liquid diffusion of boron into diamond crystals at a pressure greater than 5 Gpa and at a temperature greater than the melting temperature of the boron-containing alloy, typically less than about 1450° C.

    摘要翻译: 在原位硼掺杂工艺中形成的多晶金刚石压块。 原位硼掺杂工艺包括通过硼的液体扩散将金刚石晶体和含硼合金的混合物以大于5Gpa的压力和大于含硼合金的熔融温度的温度固结在金刚石晶体中 通常小于约1450℃